JPS6331390Y2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a connector for connecting an electrode to a substrate having an insulating material attached to a conductive layer.

This will be explained in detail by taking as an example the case where the substrate is a semiconductor wafer.

To form electrical wiring on a semiconductor wafer, a photoresist is applied to a substrate on which aluminum has been deposited, a mask is applied, and the photoresist is exposed.After development, baking is performed, and the aluminum is selectively removed using an etching solution. A method is being taken.

When selectively removing the deposited aluminum, there is a method of performing etching while electrically monitoring its progress. At this time, it is necessary to take out the electrodes from the substrate.

When a semiconductor wafer with an electrode attached thereto and another electrode, such as a platinum wire, are immersed in an etching solution, the voltage generated between the two electrodes varies depending on the area of the exposed aluminum of the semiconductor wafer.

That is, shortly after etching is started, a large voltage can be obtained because the exposed aluminum area is large, but once etching is finished, the exposed aluminum area is reduced and the voltage becomes small.

Semiconductor wafers are subjected to various diffusion treatments, but when an electrode and a semiconductor wafer are in contact over a wide area, the change in output voltage due to the contact portion remains uniform.

However, since semiconductor wafers have irregularities due to the diffusion window etching process, contact with the electrodes is often line contact or point contact. In this case, the change in output voltage varies depending on the type of diffusion treatment applied to the contact portion, and there is a defect that it is difficult to detect the end point of etching.

The present invention is a novel invention that eliminates the above-mentioned defects, and is achieved by surrounding the periphery of the electrode in contact with the substrate with an elastic resin.

An object of the present invention is to provide an electrode connector that can reliably detect the end of etching, and can perform stable and accurate etching.

Hereinafter, the present invention will be explained in detail with reference to the drawings.

Figure 1 is a plan view of the electrode connector of the present invention.
Figure 2 is a cross-sectional view of the electrode connector of the present invention.
FIG. 3 is a view taken along the line A--A in FIG. 2.

1 is a main body, 2 is a spring, 3 is a fulcrum, 4 is a gap that sandwiches the semiconductor wafer, 5 is an aluminum wire that becomes an electrode, 6 is an insulator, 7 is a contact part that comes into contact with the aluminum surface that is the conductive layer of the semiconductor wafer, 8
9 is a pressure applying part, and 9 is an elastic resin.

Hold the pressure application part 8 of the connector with your fingers, open the gap 4, and sandwich the semiconductor wafer with the aluminum vapor deposition side facing up. When you release your fingers from the pressure application part 8, the contact part 7 of the aluminum wire 5 is pressed by the force of the spring 2.
Connected to the aluminum surface of the semiconductor wafer.

In order to reduce the exposed part of the aluminum wire 5,
The parts other than the contact part 7 that comes into contact with the semiconductor wafer are covered with an insulator 6.
Cover with

It is preferable to use silicone resin as the elastic resin 9. Silicone resin has high corrosion resistance against etching solutions such as phosphoric acid, and has no adverse effect on semiconductor wafers.

The periphery of the contact portion 7 of the electrode is surrounded with silicone resin 9 so as to be higher than the contact portion 7. When a semiconductor wafer is sandwiched between the gaps 4, the silicone resin 9 is elastic and collapses, and the contact portions 7 of the electrodes break through the insulating layer of the semiconductor wafer and are connected to the aluminum conductive layer. The area around the semiconductor wafer in the contact area 7 is covered with the silicone resin 9 and is not immersed in the etching solution, so the aluminum in that area remains as it is. That is, according to the electrode connector of the present invention, even if the contact portion 7 of the electrode is a point contact, the silicone resin 9 provides the same effect as a wide surface contact. Since the remaining aluminum area is large and contains various diffusion states, the output voltage will be uniform and the detection of the end of etching will be more accurate.

FIG. 4 is a block diagram of a device using the electrode connector of the present invention.

11 is an etching bath, 12 is a platinum wire, 13 is a semiconductor wafer, 14 is an electrode connector, 15 is an insulated aluminum wire, 16 is an end point monitoring device, and 17 is an etching solution.

A semiconductor wafer 13 with a platinum wire 12 and an electrode connector 14 connected thereto is immersed in an etching solution 17, and an end point monitoring device 16 detects the end point.

As explained above, according to the present invention, the periphery of the aluminum wire of the electrode is surrounded by an elastic resin, the conductive layer is isolated from the etching solution, and the apparent contact area between the electrode and the conductive layer is widened. Therefore, detection of the end of etching becomes reliable and stable, and errors are reduced, making it possible to perform etching with high precision.

[Brief explanation of drawings]

Figure 1 is a plan view of the electrode connector of the present invention.
Figure 2 is a cross-sectional view of the electrode connector of the present invention.
FIG. 3 is a view taken along the line A--A in FIG. 2, and FIG. 4 is a configuration diagram of an apparatus using the electrode connector according to the present invention. 1 is the main body, 2 is a spring, 3 is a fulcrum, 4 is a gap that holds the semiconductor wafer, 5 is an aluminum wire that becomes an electrode, 6 is an insulator, 7 is a contact part, 8 is a pressure application part, 9 is an elastic resin , 11 is an etching tank, 12 is a platinum wire, 13 is a semiconductor wafer, 14 is an electrode connector, 15 is an insulated aluminum wire, 16 is an end point monitoring device, and 17 is an etching solution.

Claims (1)

[Claims for Utility Model Registration] 1. An electrode connector for connecting an electrode to a substrate having an insulating material attached to a conductive layer, characterized in that the periphery of the electrode in contact with the substrate is surrounded by an elastic resin. 2. The electrode connector according to claim 1, wherein the elastic resin is a silicone resin. 3. The electrode connector according to claim 1, wherein the elastic resin is thicker than the height of the electrode.