JPS63281244A - Production of optical information recording film - Google Patents
Production of optical information recording filmInfo
- Publication number
- JPS63281244A JPS63281244A JP62116004A JP11600487A JPS63281244A JP S63281244 A JPS63281244 A JP S63281244A JP 62116004 A JP62116004 A JP 62116004A JP 11600487 A JP11600487 A JP 11600487A JP S63281244 A JPS63281244 A JP S63281244A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- recording film
- hydrocarbon
- information recording
- optical information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 19
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 19
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 238000004544 sputter deposition Methods 0.000 claims abstract description 13
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
- 239000001257 hydrogen Substances 0.000 claims abstract description 6
- 229910052797 bismuth Inorganic materials 0.000 claims abstract 2
- 229910052711 selenium Inorganic materials 0.000 claims abstract 2
- 229910052714 tellurium Inorganic materials 0.000 claims abstract 2
- 239000007789 gas Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 10
- 238000007599 discharging Methods 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000012808 vapor phase Substances 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 abstract 3
- 230000005611 electricity Effects 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- -1 argon ions Chemical class 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、光学的情報記録膜の製造方法に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a method for manufacturing an optical information recording film.
（従来の技術）
金属、炭素及び水素光学的情報記録膜を製造する場合は
、通常真空雰囲気下で炭化水素ガスを流しながらＤＣ放
電をし、金属元素からなるターゲットをスパッタする。(Prior Art) When producing a metal, carbon, or hydrogen optical information recording film, a target made of a metal element is usually sputtered by DC discharge while flowing a hydrocarbon gas in a vacuum atmosphere.
するとターゲット表面がプラズマ中の正イオン及びアル
ゴンイオンによってスパッタされ、目的の基板上に堆積
・成膜する。Then, the target surface is sputtered by positive ions and argon ions in the plasma, and a film is deposited on the target substrate.
ところが、この際気相中では、炭化水素の分解が起こる
。このためその分解生成物が、ターゲット表面に付着し
てこれを被覆する。従ってターゲット表面に付着した炭
化水素分解生成物が除去されない限り、スパッタによる
成膜は続行できなくなる。However, at this time, decomposition of hydrocarbons occurs in the gas phase. Therefore, the decomposition products adhere to and coat the target surface. Therefore, unless the hydrocarbon decomposition products adhering to the target surface are removed, film formation by sputtering cannot be continued.
また一般に炭化水素分解生成物は電気的に不導体である
ため、このような生成物がターゲット表面を完全に被覆
すると、ＤＣ放電は不可能になる。Additionally, since hydrocarbon decomposition products are generally electrically nonconducting, complete coverage of the target surface by such products makes DC discharge impossible.
一部に被覆されない箇所がある場合でも、その箇所にパ
ワーが集中するため、冷陰極放電であるグロー放電から
熱電子放射を伴うアーク放電になりがちで、均一な成膜
が得られず不都合がある。これらの点からターゲット表
面に堆積した分解生成物はできるだけ除去するのが望ま
しい。Even if some parts are not coated, the power is concentrated in that part, which tends to change from glow discharge (cold cathode discharge) to arc discharge accompanied by thermionic emission, which is inconvenient because uniform film formation cannot be obtained. be. From these points, it is desirable to remove the decomposition products deposited on the target surface as much as possible.
しかし、従来はこれをスパッタエツチングなどにより除
去する手段がないため、できるだけ該生成物が生じない
ような条件でスパッタしていた。However, conventionally, there is no means to remove this by sputter etching or the like, so sputtering has been carried out under conditions that minimize the generation of such products.
（発明が解決しようとする問題点）
しかしこの方法では、スパッタガスの圧力及び流量その
他放電パワーなどに制限があるため、生産性の向上を図
れなかった。またいくらスパッタ条件を制限しても、何
度もスパッタをすれば前記炭素分解生成物の付着は避け
られないため、生産の途中で真空雰囲気を中断して、タ
ーゲット表面をブラッシングする煩しさがあった。(Problems to be Solved by the Invention) However, with this method, productivity cannot be improved because there are limitations on the pressure and flow rate of the sputtering gas, as well as the discharge power. Furthermore, no matter how much the sputtering conditions are restricted, the adhesion of carbon decomposition products cannot be avoided if sputtering is repeated many times, so there is the hassle of interrupting the vacuum atmosphere in the middle of production and brushing the target surface. Ta.
［発明の構成コ
（問題点を解決するための手段）
本発明においては、炭化水素ガスを含むプラズマ中で金
属元素をスパッタする金属、炭素及び水素を含む光学的
情報記録膜の製造方法において、前記スパッタの後、フ
ルオロカーボンガスの雰囲気下で所定時間放電する操作
を繰返す方法を提供する。[Structure of the Invention (Means for Solving Problems)] In the present invention, in a method for manufacturing an optical information recording film containing metal, carbon and hydrogen, in which a metal element is sputtered in a plasma containing hydrocarbon gas, A method is provided in which, after the sputtering, an operation of discharging in a fluorocarbon gas atmosphere for a predetermined period of time is repeated.
この場合炭化水素ガスにはＣＨ４、Ｃ２Ｈ６、Ｃ３Ｈ，
・Ｃ４Ｈ１いＣ２Ｈ４ＳＣ３Ｈ６ｓＣ４Ｈ８又はＣ２Ｈ
２を、フルオロカーボンガスには ＣＦ４、ＣＦ３Ｃ，
ｌ？、ＣＦ２Ｃノ２、ＣＦＣＩｓ又はＣ３Ｈ８を用いる
のが好ましい。In this case, the hydrocarbon gases include CH4, C2H6, C3H,
・C4H1C2H4SC3H6sC4H8 or C2H
2, and fluorocarbon gases include CF4, CF3C,
l? , CF2C-2, CFCIs or C3H8 are preferably used.
また炭化水素ガスの流量は、 ５０〜１５０ＳＣＣＭが
好ましい。Further, the flow rate of the hydrocarbon gas is preferably 50 to 150 SCCM.
また金属元素は、Ｔｅ５Ｓｅ、ＢｉＳ Ｉｎ。Further, the metal elements are Te5Se and BiSIn.
Ａｇ５Ｇｅ、Ｓｂ、Ｓｎ、Ｇａ５Ａ５ＳＰ、Ｐｂ又はＳ
ｉが好ましい。Ag5Ge, Sb, Sn, Ga5A5SP, Pb or S
i is preferred.
（作用）
本発明においては、炭化水素ガス雰囲気下での放電とフ
ルオロカーボンガス雰囲気下でのそれを交互に繰返す。(Function) In the present invention, discharge under a hydrocarbon gas atmosphere and discharge under a fluorocarbon gas atmosphere are alternately repeated.
その結果炭化水素ガスの分解生成物をフルオロカーボン
ガスの分解生成物がスパッタするため、ターゲット表面
は常に汚染のない状態となり、安定した成膜が可能にな
る。フルオロカーボンガス中での放電によって生ずるＣ
Ｆ２ビラジカルやＦ・ラジカルが、ターゲット上に堆積
している炭化水素分解生成物と反応しガス状となるため
である。As a result, the decomposition products of the hydrocarbon gas are sputtered by the decomposition products of the fluorocarbon gas, so that the target surface is always free from contamination, making stable film formation possible. C produced by discharge in fluorocarbon gas
This is because F2 biradicals and F radicals react with hydrocarbon decomposition products deposited on the target and become gaseous.
（実施例）
第１図に示すように、直径５インチのＴｅスパッタター
ゲット２をカソードとして収納した真空チェンバ４を、
一旦ｌＸｌ０−６Ｔｏｒｒ以下に排気した後、エタンガ
ス６とアルゴンガス８をチェンバ４内に導入し、グロー
放電の可能な圧力にするため、その流量を調節した。こ
こではエタンガス６及びアルゴンガス８の流量を、共に
１１００３ＣＣとした。このときチェンバ４内の圧力は
１０″″２Ｔｏｒｒであった。この雰囲気下でＤＣ電源
１０から２００Ｗの電力を供給してターゲット２をスパ
ッタし、基板用のガラス板１２上に記録膜１４を形成し
た。この記録膜は、炭素、水素及びＴｅを含むことが認
められた。(Example) As shown in FIG. 1, a vacuum chamber 4 containing a Te sputtering target 2 with a diameter of 5 inches as a cathode was
Once the chamber was evacuated to below 1X10-6 Torr, ethane gas 6 and argon gas 8 were introduced into the chamber 4, and their flow rates were adjusted to maintain a pressure that would allow glow discharge. Here, the flow rates of both the ethane gas 6 and the argon gas 8 were set to 11003 CC. At this time, the pressure inside the chamber 4 was 10''2 Torr. In this atmosphere, the target 2 was sputtered by supplying 200 W of power from the DC power supply 10 to form the recording film 14 on the glass plate 12 for the substrate. This recording film was found to contain carbon, hydrogen, and Te.
Ｔｅターゲット上には、黒色の粒状物質がほぼ全面にわ
たって堆積していた。同様の放電を繰返して記録膜を形
成したところ、１０回目の放電時に得られた記録膜の厚
さは、１回目のそれの約６０％であり、２０回目のそれ
は１回目のそれの４０％程度にまで減少した（第２図）
。Black particulate matter was deposited over almost the entire surface of the Te target. When a recording film was formed by repeating the same discharge, the thickness of the recording film obtained at the 10th discharge was approximately 60% of that of the first discharge, and that of the 20th discharge was 40% of that of the first discharge. (Figure 2)
.
２０回目の放電の後、チェンバ４内を再度ＩＸ１０−６
Ｔｏｒｒ以下に排気した。次いでＣＦ４ガス７をチェン
バ４内に導入して圧力を１Ｏ−２Ｔ ｏｒｒとした後、
１５０ＷのＤＣ放電パワーで３０分間スパッタ放電した
。放電終了後、再びチェンバ内をＩ Ｘｉ Ｏ−６Ｔｏ
ｒｒに排気した。次いで、再度エタンガス６及びアルゴ
ンガス８を共に１１００５ＣＣの流量で導入して、前述
の条件でスパッタしたところ、１回目の放電時と同じ膜
厚の記録膜が得られた（第２図）。After the 20th discharge, IX10-6 is re-injected into chamber 4.
It was evacuated to below Torr. Next, after introducing CF4 gas 7 into the chamber 4 and setting the pressure to 1O-2T orr,
Sputter discharge was performed for 30 minutes with a DC discharge power of 150W. After discharging, the inside of the chamber is heated again with I Xi O-6To.
Exhausted to rr. Next, ethane gas 6 and argon gas 8 were both introduced at a flow rate of 11,005 cc, and sputtering was performed under the above-mentioned conditions, resulting in a recording film having the same thickness as the first discharge (FIG. 2).
実際にはこのように成膜速度が減少する前に、フルオロ
カーボンガス中で放電すれば１回目の膜厚を常時前るこ
とができる。In fact, if discharge is performed in fluorocarbon gas before the film formation rate decreases as described above, the film thickness of the first time can always be made earlier.
［発明の効果］
以上説明したように、本発明によれば、金属、炭素及び
水素を含む光学的情報記録膜の製造方法において、金属
元素からなるスパッタターゲットの表面を炭化水素の気
相分解生成物で汚染することなく、初期のスパッタ速度
を保ったまま成膜が可能になる。[Effects of the Invention] As explained above, according to the present invention, in a method for manufacturing an optical information recording film containing metal, carbon, and hydrogen, the surface of a sputtering target made of a metal element is subjected to vapor phase decomposition of hydrocarbons. It becomes possible to form a film while maintaining the initial sputtering speed without contaminating it with substances.
第１図は本発明に係る記録膜の形成方法を示す図、第２
図は炭化水素ガス中及びフルオロカーボンガス中で放電
したときの成膜速度の変化を示す図である。
２・・・スパッタターゲット、１２・・・ガラス板、１
４・・・・・・記録膜。
出願人代理人 弁理士 鈴江武彦
第１図
７臭イし木象刀″ス丁て′の校−叱ｌ！１ｌ（（第２図FIG. 1 is a diagram showing a method of forming a recording film according to the present invention, and FIG.
The figure shows the change in film formation rate when discharging in hydrocarbon gas and fluorocarbon gas. 2... Sputter target, 12... Glass plate, 1
4...Recording film. Applicant's representative Patent attorney Takehiko Suzue (Figure 1)
Claims (5)
ッタする金属、炭素及び水素を含む光学的情報記録膜の
製造方法において、前記スパッタの後、フルオロカーボ
ンガスの雰囲気下で所定時間放電する操作を繰返す光学
的情報記録膜の製造方法。(1) In a method for producing an optical information recording film containing metal, carbon, and hydrogen, in which a metal element is sputtered in a plasma containing hydrocarbon gas, after the sputtering, an operation of discharging in an atmosphere of fluorocarbon gas for a predetermined period of time is performed. A method for manufacturing a repeatable optical information recording film.
Ｃ＿３Ｈ＿８、Ｃ＿４Ｈ＿１＿０、Ｃ＿２Ｈ＿４、Ｃ＿
３Ｈ＿６、Ｃ＿４Ｈ＿８又はＣ＿２Ｈ＿２である特許請
求の範囲第１項記載の方法。(2) The hydrocarbon gas is CH_4, C_2H_6,
C_3H_8, C_4H_1_0, C_2H_4, C_
3H_6, C_4H_8 or C_2H_2.
Ｃｌ、ＣＦ＿２Ｃｌ＿２、ＣＦＣｌ＿３又はＣ＿３Ｆ＿
８である特許請求の範囲第１項記載の方法。(3) The fluorocarbon gas is CF_4, CF_3
Cl, CF_2Cl_2, CFCl_3 or C_3F_
8. The method according to claim 1, wherein the method is:
、Ｇｅ、Ｓｂ、Ｓｎ、Ｇａ、Ａｓ、Ｐ、Ｐｂ又はＳｉで
ある特許請求の範囲第１項記載の方法。(4) The metal element is Te, Se, Bi, In, Ag
, Ge, Sb, Sn, Ga, As, P, Pb or Si.
である特許請求の範囲第２項記載の方法。(5) The flow rate of the hydrocarbon gas is 50 to 150 SCCM
The method according to claim 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62116004A JPS63281244A (en) | 1987-05-14 | 1987-05-14 | Production of optical information recording film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62116004A JPS63281244A (en) | 1987-05-14 | 1987-05-14 | Production of optical information recording film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63281244A true JPS63281244A (en) | 1988-11-17 |
Family
ID=14676453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62116004A Pending JPS63281244A (en) | 1987-05-14 | 1987-05-14 | Production of optical information recording film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63281244A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0405450A2 (en) * | 1989-06-30 | 1991-01-02 | Kabushiki Kaisha Toshiba | Data recording medium and method of manufacturing the same |
-
1987
- 1987-05-14 JP JP62116004A patent/JPS63281244A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0405450A2 (en) * | 1989-06-30 | 1991-01-02 | Kabushiki Kaisha Toshiba | Data recording medium and method of manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5306666A (en) | Process for forming a thin metal film by chemical vapor deposition | |
| US4250428A (en) | Bonded cathode and electrode structure with layered insulation, and method of manufacture | |
| US4000055A (en) | Method of depositing nitrogen-doped beta tantalum | |
| US3258413A (en) | Method for the fabrication of tantalum film resistors | |
| JPS63281244A (en) | Production of optical information recording film | |
| JPH09148676A (en) | Semiconductor laser and its manufacture | |
| JPH04103754A (en) | Ceramic coating materials and their manufacturing methods | |
| WO1982004158A1 (en) | Magnetic recording medium | |
| JPS6358798B2 (en) | ||
| JP3180332B2 (en) | Method of cleaning apparatus for forming carbon or carbon-based coating | |
| US4339471A (en) | Method of coating substrates with an abrasive layer | |
| US4115228A (en) | Method of making secondary-electron emitters | |
| JPH0510426B2 (en) | ||
| JP2524179B2 (en) | Sputtering method | |
| JP2001107246A (en) | Deposition of carbon film or film composed essentially of carbon | |
| JPH02115359A (en) | Formation of compound thin film and device therefor | |
| US3575833A (en) | Hafnium nitride film resistor | |
| JPS6383271A (en) | Production of diamond-like carbon film | |
| JPH0758086A (en) | Electrode plate for plasma etching | |
| JPH0645876B2 (en) | Reduced pressure vapor deposition method and apparatus | |
| JP2957620B2 (en) | TiN film with uniform chromaticity and method for forming the same | |
| JPH0247252A (en) | Production of composite material film | |
| JPH06116711A (en) | Formation of alumina film | |
| JPS6058200B2 (en) | How to manufacture diamond parts | |
| JP3634461B2 (en) | Coating film excellent in halogen-based gas corrosion resistance and halogen-based plasma corrosion resistance, and laminated structure provided with the coating film |