JPS63276822A - Patterning method for superconductive thin film - Google Patents
Patterning method for superconductive thin filmInfo
- Publication number
- JPS63276822A JPS63276822A JP62110369A JP11036987A JPS63276822A JP S63276822 A JPS63276822 A JP S63276822A JP 62110369 A JP62110369 A JP 62110369A JP 11036987 A JP11036987 A JP 11036987A JP S63276822 A JPS63276822 A JP S63276822A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- superconducting
- substrate
- pattern
- patterning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、基板上に超電導膜の配線パターンを形成する
方法に関し、このようにして形成された配線パターンは
、エレクトロニクス、電子計算機、電力などの各分野で
使用される。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a method for forming a wiring pattern of a superconducting film on a substrate, and the wiring pattern thus formed is used in electronics, electronic computers, electric power, etc. used in various fields.
(従来の技術)
従来、電気配線パターンを超電導体で構成しようとする
場合は、予め形成された超電導体を所望パターンに従っ
て基板上に張りつけて構成することや、基板上にマスク
を用いることによってスパッタ法、EB黒着、CVD法
などを用いて超電導膜を形成し、基板上に超電導パター
ンを形成することが考えられていた。(Prior Art) Conventionally, when attempting to construct an electrical wiring pattern using a superconductor, superconductors formed in advance are pasted onto a substrate according to a desired pattern, or sputtering is performed by using a mask on the substrate. It has been considered to form a superconducting film using a method such as a method, EB black coating, or CVD method to form a superconducting pattern on a substrate.
(本発明が解決しようとする問題点)
しかしながら前記前者による配線パターンの形成方法は
手作業により回路パターンを構成するので微細パターン
を形成するのが難しく、また後者による方法は基板上に
パターンを形成する工程が必要になり作業性が悪く、し
かもこの方法はマスクパターンを予め作成して置かなけ
ればならなく、種々の回路パターンを即座に形成するこ
とが出来ないという欠点があった。(Problems to be Solved by the Present Invention) However, the former method of forming a wiring pattern requires manual construction of the circuit pattern, making it difficult to form fine patterns, and the latter method forms a pattern on a substrate. However, this method requires a step to prepare the mask pattern, which has a disadvantage in that it is not possible to form various circuit patterns immediately.
(問題点を解決するための手段)
本発明はかかる点に鑑みなされたもので、基板上に超電
導になろうる薄膜を形成し、次に形成しようとするパタ
ーンに従ってレーザビームを前記薄膜に照射して前記薄
膜を超電導化させ、基板上に超電導パターンを形成する
ことを特徴とする超電導薄膜のバターニング方法である
。(Means for Solving the Problems) The present invention has been made in view of the above points, and involves forming a thin film that is likely to become superconducting on a substrate, and then irradiating the thin film with a laser beam according to the pattern to be formed. The method of patterning a superconducting thin film is characterized in that the thin film is made superconductive by forming a superconducting pattern on a substrate.
(作用)
加熱手段により超電導体に変化する薄膜にレーザビーム
を照射すると、レーザビームが照射された部分の薄膜の
みが超電導体に変化する。従ってレーザビームの照射を
パターン化しようとするパターンに従って行えば、レー
ザアニーリングの急冷効果によって、所望の超電導体か
らなる回路パターンを構成することができる。(Function) When a laser beam is irradiated onto a thin film that changes into a superconductor by heating means, only the portion of the thin film that is irradiated with the laser beam changes into a superconductor. Therefore, if laser beam irradiation is performed in accordance with the desired pattern, a circuit pattern made of a desired superconductor can be formed by the rapid cooling effect of laser annealing.
(実施例)
以下、第1図および第2図に図示した実施例により説明
する0図において(1)はMgO単結晶<100>材の
基板、(2)はアニーリングすることにより超電導に変
化するY−Ba−Cu−0系の薄膜、(3)はCO,ガ
スレーザによるレーザビームである。始めに基板(1)
を両面研磨する0次に基板fi+の片面に薄膜(2)を
形成するが、この形成は次のようにして行う。(Example) The following will explain the examples shown in Figures 1 and 2. In Figure 0, (1) is a substrate made of MgO single crystal <100> material, and (2) is a substrate that changes to superconductivity by annealing. Y-Ba-Cu-0 based thin film, (3) is a laser beam from a CO, gas laser. First board (1)
A thin film (2) is formed on one side of the substrate fi+, which is polished on both sides.This formation is performed as follows.
金属及び各種希土類の酸化物(YtOa+ 1−azO
s+ 5ctOz)もしくは炭酸塩(BaCOs+ 5
rCO3)とCuOないしはCuzOを秤量後、乳鉢中
で良く混合する。その後必要により予備焼結する。その
後、必要によりその予備焼結した物を再び粉砕混合して
圧着し又は800℃で焼成して、厚み2鶴、直径4イン
チのインゴットを作成する0次に前記酸化物またはイン
ゴットをターゲットとして、基板(1)の温度を450
℃、Ar対島の比が1対lの雰囲気、ガス圧10ミリt
orrsRf電力300−の高周波マグネトロンスパッ
タ法により、基板(1)上に薄膜(2)を0.5n形成
した。これにより作成されたY−Ba−Cu−0系の薄
膜(2)は、超電導特性を示さなかった。Oxides of metals and various rare earths (YtOa+ 1-azO
s+ 5ctOz) or carbonate (BaCOs+ 5ctOz)
After weighing rCO3) and CuO or CuzO, they are mixed well in a mortar. After that, preliminary sintering is performed if necessary. Thereafter, if necessary, the pre-sintered material is crushed and mixed again and pressed or fired at 800°C to create an ingot with a thickness of 2 inches and a diameter of 4 inches.Next, using the oxide or ingot as a target, The temperature of the substrate (1) is set to 450℃.
°C, atmosphere with an Ar to island ratio of 1:1, gas pressure 10 mt
A thin film (2) having a thickness of 0.5 nm was formed on the substrate (1) by high frequency magnetron sputtering with orrsRf power of 300-. The Y-Ba-Cu-0-based thin film (2) thus produced did not exhibit superconducting properties.
次に発振波長10.6#Il、ビーム径2日ΦのCog
ガスレーザ光を、焦点路jll 100鶴のZn5e製
集光レンズによって集束させて、集束スポット径が11
00Pのレーザビーム(3)を作成し、このレーザビー
ム(3)を形成しようとするパターンに基づき薄膜(2
)上に照射して、この部分を超電導化する。第2図にお
いて(4)はレーザビーム(3)を薄膜(2)上に照射
することによって構成された超電導パターンを示す、こ
のように本発明はレーザビーム(3)を薄膜(2)上に
照射することによって所望の回路パターンを容易に構成
することができる。レーザビーム(3)を薄膜(2)に
照射するには、レーザビーム(3)を固定し、薄膜(2
)が形成された基板il+をステップモータによってx
−y方向に自由に駆動できる微動台に載置し、基板(1
)を移動することにより行った。これにより形成された
回路パターンは、90″にで超電導特性を示すことが確
認された。Next, Cog with oscillation wavelength 10.6 #Il and beam diameter 2 days Φ
The gas laser beam is focused by a Zn5e condenser lens with a focal length of 100 mm, and the focused spot diameter is 11 mm.
A 00P laser beam (3) is created, and a thin film (2
) to make this part superconducting. In Fig. 2, (4) shows a superconducting pattern constructed by irradiating a laser beam (3) onto a thin film (2). A desired circuit pattern can be easily formed by irradiation. To irradiate the thin film (2) with the laser beam (3), the laser beam (3) is fixed and the thin film (2) is irradiated with the laser beam (3).
) is formed on the substrate il+ by a step motor.
- Place the substrate (1
) by moving. It was confirmed that the circuit pattern formed in this way exhibited superconducting characteristics at 90''.
なお、本発明の上記実施例は、基板(1)がMgO・薄
膜(2)がY−Ba−Cu−0系薄膜、レーザビーム(
3)がCotガスレーザ、薄膜の形成がスパッタ法の場
合のみを説明しているが、本発明はそれぞれTiozt
Sr丁!Os+All0fflYSZのいずれかの単結
晶、La−5r−Cu−0系薄膜、YAG レーザやA
rガスレーザ、電子ビーム蒸着方法やCVD法や焼結な
どの方法によっても同様に効果がある。In the above embodiment of the present invention, the substrate (1) is MgO, the thin film (2) is a Y-Ba-Cu-0 thin film, and the laser beam (
3) describes only the case where the Cot gas laser is used and the thin film is formed by the sputtering method.
Sr Ding! Os+All0fflYSZ single crystal, La-5r-Cu-0 thin film, YAG laser or A
Similar effects can also be achieved by methods such as r gas laser, electron beam evaporation, CVD, and sintering.
(発明の効果)
本発明は以上詳述したように、基板上に加熱することに
より超電導になろうる薄膜を形成し、次に形成しようと
するパーターンに従ってレーザビームを前記薄膜に照射
して前記薄膜を超電導化させ、基板上に超電導パターン
を形成することを特徴とする超電導薄膜のバターニング
方法であり、極めて容易に超電導体による回路パターン
を作成することが出来る優れた効果がある。(Effects of the Invention) As described in detail above, the present invention forms a thin film that becomes superconducting by heating it on a substrate, and then irradiates the thin film with a laser beam according to the pattern to be formed. This method of patterning a superconducting thin film is characterized by making the thin film superconducting and forming a superconducting pattern on a substrate, and has the excellent effect of making it possible to extremely easily create a circuit pattern using a superconductor.
第1図は本発明一実施例を説明するための要部側面図、
第2図は本発明一実施例によって作成された回路パター
ンの平面図を示す。
(1)は基板、(2)は薄膜、(3)はレーザビーム。
特許出願人 古河電気工業株式会社
第1図
第2図FIG. 1 is a side view of essential parts for explaining one embodiment of the present invention;
FIG. 2 shows a plan view of a circuit pattern created according to an embodiment of the present invention. (1) is the substrate, (2) is the thin film, and (3) is the laser beam. Patent applicant Furukawa Electric Co., Ltd. Figure 1 Figure 2
Claims (5)
成しようとするパターンに従ってレーザビームを前記薄
膜に照射して前記薄膜を超電導化させ、基板上に超電導
パターンを形成することを特徴とする超電導薄膜のパタ
ーニング方法。(1) A thin film capable of becoming superconducting is formed on a substrate, and then a laser beam is irradiated onto the thin film according to the pattern to be formed to make the thin film superconducting, thereby forming a superconducting pattern on the substrate. A method for patterning superconducting thin films.
ーザ、Arガスレーザのいずれかであることを特徴とす
る特許請求の範囲第1項記載の超電導薄膜のパターニン
グ方法。(2) The method for patterning a superconducting thin film according to claim 1, wherein the laser beam is any one of a CO_2 gas laser, a YAG laser, and an Ar gas laser.
r(orBaorSe)−Cu−O系からなることを特
徴とする特許請求の範囲第1項または第2項記載の超電
導薄膜のパターニング方法。(3) The thin film is Y-Ba-Cu-O based or La-S
3. A method for patterning a superconducting thin film according to claim 1 or 2, characterized in that the superconducting thin film is made of r(orBaorSe)-Cu-O system.
Al_2O_3、YSZの単結晶のいずれかからなるこ
とを特徴とする特許請求の範囲第1項乃至第3項のいず
れか1つの項に記載の超電導薄膜のパターニング方法。(4) The substrate is MgO, TiO_2, SrTiO_3,
A method for patterning a superconducting thin film according to any one of claims 1 to 3, characterized in that the superconducting thin film is made of either Al_2O_3 or YSZ single crystal.
、CVD法、焼結のいずれかである特許請求の範囲第1
項乃至第4項のいずれか1つの項に記載の超電導薄膜の
パターニング方法。(5) The thin film is formed by any one of sputtering, electron beam evaporation, CVD, and sintering.
4. A method for patterning a superconducting thin film according to any one of Items 4 to 4.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62110369A JPS63276822A (en) | 1987-05-06 | 1987-05-06 | Patterning method for superconductive thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62110369A JPS63276822A (en) | 1987-05-06 | 1987-05-06 | Patterning method for superconductive thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63276822A true JPS63276822A (en) | 1988-11-15 |
Family
ID=14534046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62110369A Pending JPS63276822A (en) | 1987-05-06 | 1987-05-06 | Patterning method for superconductive thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63276822A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63292530A (en) * | 1987-05-26 | 1988-11-29 | Toshiba Corp | Manufacture of superconductive wire of compound |
JPS63292531A (en) * | 1987-05-26 | 1988-11-29 | Toshiba Corp | Manufacture of superconductive wire of compound |
JPS6420638A (en) * | 1987-07-15 | 1989-01-24 | Sharp Kk | Wiring of semiconductor device |
JPH02252680A (en) * | 1989-03-24 | 1990-10-11 | Nippon Cement Co Ltd | Patterning of oxide superconducting film |
-
1987
- 1987-05-06 JP JP62110369A patent/JPS63276822A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63292530A (en) * | 1987-05-26 | 1988-11-29 | Toshiba Corp | Manufacture of superconductive wire of compound |
JPS63292531A (en) * | 1987-05-26 | 1988-11-29 | Toshiba Corp | Manufacture of superconductive wire of compound |
JPS6420638A (en) * | 1987-07-15 | 1989-01-24 | Sharp Kk | Wiring of semiconductor device |
JPH02252680A (en) * | 1989-03-24 | 1990-10-11 | Nippon Cement Co Ltd | Patterning of oxide superconducting film |
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