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JPS63266921A - Power-on reset signal generating circuit - Google Patents

Power-on reset signal generating circuit

Info

Publication number
JPS63266921A
JPS63266921A JP10122787A JP10122787A JPS63266921A JP S63266921 A JPS63266921 A JP S63266921A JP 10122787 A JP10122787 A JP 10122787A JP 10122787 A JP10122787 A JP 10122787A JP S63266921 A JPS63266921 A JP S63266921A
Authority
JP
Japan
Prior art keywords
channel
power
channel transistor
turned
reset signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10122787A
Other languages
Japanese (ja)
Inventor
Takayuki Kurayama
倉山 隆之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP10122787A priority Critical patent/JPS63266921A/en
Publication of JPS63266921A publication Critical patent/JPS63266921A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To decrease power consumption by providing a transistor (TR) connecting in series with a (TR) being a component of a reset pulse width control circuit and executing switching operation by a generated reset signal so as to reduce the steady-state current after reset. CONSTITUTION:At application of power via a capacitor 5, the level of an input of an inverter 7 rises nearly equal to a power voltage, resulting that the output Q1 rises and reaches a high level. Then an N-channel TR 9 is turned on. When the power voltage exceeds a threshold value of an N-channel TR 2, the TR 2 is turned on and a gate input of a P-channel TR 1 goes to a low level and the TR 1 is turned on. In this case, a voltage proportional to the on-resistance of the TRs 1, 2 exceeds the threshold value of the N-channel TR 4, then the TR 4 is turned on and the input of the inverter 7 goes to a low level and the output Q2 goes to a low level. Then the N-channel TR 9 is inverted to be in the OFF state to interrupt the current flowing to the TRs 1, 2.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、パワーオンリセット信号発生回路、特に半導
体集積回路における、低消費電力かつ集積度の嶋いパワ
ーオンリセット信号発生回路に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a power-on reset signal generating circuit, and particularly to a power-on reset signal generating circuit with low power consumption and low integration density in a semiconductor integrated circuit.

〔従来の技術〕[Conventional technology]

一般に半導体集積回路におけるパワーオンリセット信号
発生回路は、電源立ち上げ後、半導体集積回路の状態を
設定する為に使われている。
Generally, a power-on reset signal generation circuit in a semiconductor integrated circuit is used to set the state of the semiconductor integrated circuit after power is turned on.

従来のパワーオンリセット信号発生回路の一例を第2図
に示す。トランジスタとして、Pチャネルトランジスタ
11及び13%Nチャネルトランジスタ12及び14.
コンデンサとして15及び16、インバータとして17
及び18を第2図の様に接続されたものとなってい友。
An example of a conventional power-on reset signal generation circuit is shown in FIG. As transistors, P-channel transistor 11 and 13% N-channel transistors 12 and 14.
15 and 16 as capacitors, 17 as inverter
and 18 are connected as shown in Figure 2.

この回路では、電源立ち上げ時にコンデンサ15を介し
てインバータ17の入力に電源電圧とほぼ等しく上昇し
、その結果出力Q2も上昇していく。
In this circuit, when the power is turned on, the input voltage of the inverter 17 rises almost equal to the power supply voltage through the capacitor 15, and as a result, the output Q2 also rises.

また電源電圧がNチャネルトランジスタ12のしきい値
電圧を越えると、Nチャネルトランジスタ12がONE
、、Pチャネルトランジスタ11のゲート入力がLOW
レベルにな9.Pチャネルトランジスタ11がONする
。この時、Pチャネルトランジスタ11とNチャネルト
ランジスタ12のON抵抗に比例し比電圧がNチャネル
ト〉ンジスタ14のしきい値電圧を越えると、Nチャネ
ルトランジスタ14がONし、インバータ170入力H
Lowレベルになり出力Q2もHighレベルかG)L
owレベルに変化する。この様に出力Q2が電源電圧と
等しく上昇し、)ligbレベルからLowレベルに変
化するまでをリセット信号として使用していた。
Further, when the power supply voltage exceeds the threshold voltage of the N-channel transistor 12, the N-channel transistor 12 becomes ONE.
,, the gate input of P-channel transistor 11 is LOW
Level 9. P-channel transistor 11 is turned on. At this time, when the specific voltage is proportional to the ON resistance of the P-channel transistor 11 and the N-channel transistor 12 and exceeds the threshold voltage of the N-channel transistor 14, the N-channel transistor 14 is turned on and the inverter 170 input H
Is it low level and the output Q2 is also high level?G)L
Changes to OW level. In this way, the output Q2 rises to the same level as the power supply voltage and is used as a reset signal until it changes from the )ligb level to the Low level.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来のパワーオンリセット信号発生回路は、電
源投入後にリセット信号を発生した後も、Pチャネルト
ランジスタ11及びNチャネルトランジスタ12はON
状態のままであり1両省を通して電源、GND間に定常
゛電流が流;rt、消費電力の増大をまねいていた。
In the conventional power-on reset signal generation circuit described above, even after the reset signal is generated after the power is turned on, the P-channel transistor 11 and the N-channel transistor 12 remain ON.
As a result, a steady current was flowing between the power supply and GND through both terminals, leading to an increase in power consumption.

また、上記欠点の定常電流を小さくする為には。Also, in order to reduce the steady current of the above drawback.

Pチャネルトランジスタ11及びNチャネルトランジス
タ12のゲート長を大きくシ、トランジスタのON抵抗
を大きくする必要があり、その為に半導体集積回路の集
積度を下げていた。
It is necessary to increase the gate lengths of the P-channel transistor 11 and the N-channel transistor 12 to increase the ON resistance of the transistors, which lowers the degree of integration of the semiconductor integrated circuit.

不発明の目的に、上記の欠点を解決し、リセット後の定
常電流を小さくし、消費電力を低減させ。
The purpose of the invention is to solve the above drawbacks, reduce the steady state current after reset, and reduce power consumption.

かつ、半導体集積回路の集積度を読めることのできるパ
ワーオンリセット信号発生回路を提供することにある。
Another object of the present invention is to provide a power-on reset signal generating circuit that can read the degree of integration of a semiconductor integrated circuit.

し問題点を解決するための手段〕 本発明のパワーオンリセット信号発生回路は、リセット
パルス幅制御回路を構成するトランジスタに直列に接続
され、発生し几リセット信号に工りスイッチ動作するト
ランジスタを有している。
[Means for Solving the Problems] The power-on reset signal generating circuit of the present invention includes a transistor connected in series with a transistor constituting a reset pulse width control circuit and operating a switch based on the generated reset signal. are doing.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例のパワーオンリセット信号発
生回路である。第1図において、トランジスタ1から4
.コンデンサ5及び6.インバータ7及び8は、第2図
の従来の回路のトランジスタ11から14.コンデンサ
15及び16%インバータ17及び18にそ扛ぞれ相当
する。また、トランジスタとしてNチャネルトランジス
タ9のドレイン及びソースをNチャネルトランジスタ2
とGNDの間にそれぞれ接続し、ゲートに出力Q1に接
続する。770えてPチャネルトランジスタ10のゲー
トをコンデンサ5とNチャネルトランジスタ3のゲート
及びドレインに接続し、ソース及びドレインにそれぞn
電源及びNチャネルトランジスタ4のゲート、Pチャネ
ルトランジスタ1のゲートとドレイン、Nチャネルトラ
ンジスタ2のドレインにI)続する。
FIG. 1 shows a power-on reset signal generating circuit according to an embodiment of the present invention. In Figure 1, transistors 1 to 4
.. Capacitors 5 and 6. Inverters 7 and 8 are similar to transistors 11 to 14 . of the conventional circuit of FIG. They correspond to capacitor 15 and 16% inverters 17 and 18, respectively. Further, as a transistor, the drain and source of the N-channel transistor 9 are connected to the N-channel transistor 2.
and GND, and the gate is connected to the output Q1. 770, connect the gate of the P-channel transistor 10 to the capacitor 5 and the gate and drain of the N-channel transistor 3, and connect the source and drain with n.
I) connected to the power supply and the gate of N-channel transistor 4, the gate and drain of P-channel transistor 1, and the drain of N-channel transistor 2;

本発明は、電源投入時にコンデンサ5を介してインバー
タ7の入力は、電源電圧とほぼ等しく上昇し、その結果
出力Q1も上昇しRi ghレベルになる。これにより
Nチャネルトランジスタ9が開状態になる。次に′:1
ttc′?Ii圧がNチャネルトランジスタ2のしきい
値電圧を越えるとNチャネルトランジスタ2がONL、
、Pチャネルトランジスタ1のゲート入力がLowレベ
ルに?、り、Pチャネルトランジスタ1がONする。こ
の時、Pチャネルトランジス3t 1とNチャネルトラ
ンジスタ2のON抵抗に比例したi電圧がNチャネルト
ランジスタ4のしきいイ直電圧を越えると、Nチャネル
トランジスタ4がONし、インバータ7の入力rjLo
wレベルになり、出力Q2もHighレベルからLow
レベルに変化する。出力Q2がLowレベルになること
よりNチャネルトランジスタ9がOFFに反転し、Pチ
ャネルトランジスタ1とNチャネルトランジスタ2に流
nる電iを遮断する。また、Pチャネルトランジスタ1
01−1%Nチャネルトランジスタ9がOFFすること
によるNチャネルトランジスタ4のゲート入力が不安定
状態になるのを防止する為のトランジスタである。
In the present invention, when the power is turned on, the input of the inverter 7 rises to approximately the same level as the power supply voltage through the capacitor 5, and as a result, the output Q1 also rises to the Righ level. This causes N-channel transistor 9 to be in an open state. Then ′:1
ttc'? When the Ii pressure exceeds the threshold voltage of N-channel transistor 2, N-channel transistor 2 turns ONL,
, the gate input of P-channel transistor 1 goes to Low level? , P-channel transistor 1 turns on. At this time, when the i voltage proportional to the ON resistance of the P-channel transistor 3t1 and the N-channel transistor 2 exceeds the threshold direct voltage of the N-channel transistor 4, the N-channel transistor 4 is turned on and the input rjLo of the inverter 7 is
w level, and output Q2 also goes from high level to low
Change in level. Since the output Q2 becomes Low level, the N-channel transistor 9 is turned off, and the current i flowing to the P-channel transistor 1 and the N-channel transistor 2 is cut off. In addition, P channel transistor 1
01-1% This is a transistor for preventing the gate input of the N-channel transistor 4 from becoming unstable due to the N-channel transistor 9 being turned off.

以上の説明において例としてトランジスタ9にNチャネ
ルトランジスタを使用するものとしたが、これに限らす
Pチャネルトランジスタでもゲートをインバータフの出
力に接続してやれば同様な効果が得られ、不発明の目的
を達成することができる。
In the above explanation, an N-channel transistor is used as the transistor 9 as an example, but the same effect can be obtained even with a P-channel transistor whose gate is connected to the output of the inverter. can be achieved.

〔発明の効果〕〔Effect of the invention〕

以上説明した工うに本発明のパワーオンリセット信号発
生回路に工nば、定常電流が減少し、消費電力を低減す
る効果を得ることができる。
If the power-on reset signal generating circuit of the present invention is modified as described above, the steady current is reduced and power consumption can be reduced.

また、上記効果により、リセットパルス幅制御回路のト
ランジスタを小さくする事が用油となり。
In addition, due to the above effect, it is useful to reduce the size of the transistor in the reset pulse width control circuit.

半導体集積回路の集積度を高める効果が得られる。The effect of increasing the degree of integration of semiconductor integrated circuits can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図に不発明の一実施例の回路図、第2図は従来の回
路図である。 1.3.10.11.13・・・・・・PチャネルMO
Sトランジスタ、2,4.9,12,14・・・・・・
NチャネルMOSトランジスタ、5.6,15,16・
・・・・・コンデンサ、?、8.17.18・・・・・
・インバータ%Ql、Q2・・・・・・出力端子。 箔 1 回
FIG. 1 is a circuit diagram of an embodiment of the invention, and FIG. 2 is a conventional circuit diagram. 1.3.10.11.13...P channel MO
S transistor, 2, 4.9, 12, 14...
N-channel MOS transistor, 5.6, 15, 16.
...Capacitor? , 8.17.18...
・Inverter %Ql, Q2...Output terminal. Foil 1 time

Claims (1)

【特許請求の範囲】[Claims] 半導体集積回路のパワーオンリセット信号発生回路にお
いて、リセットパルス幅制御回路に直列に接続され、発
生したリセット信号によりスイッチ動作するトランジス
タを有することを特徴とするパワーオンリセット信号発
生回路。
A power-on reset signal generating circuit for a semiconductor integrated circuit, comprising a transistor connected in series to a reset pulse width control circuit and operated as a switch by a generated reset signal.
JP10122787A 1987-04-23 1987-04-23 Power-on reset signal generating circuit Pending JPS63266921A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10122787A JPS63266921A (en) 1987-04-23 1987-04-23 Power-on reset signal generating circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10122787A JPS63266921A (en) 1987-04-23 1987-04-23 Power-on reset signal generating circuit

Publications (1)

Publication Number Publication Date
JPS63266921A true JPS63266921A (en) 1988-11-04

Family

ID=14295011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10122787A Pending JPS63266921A (en) 1987-04-23 1987-04-23 Power-on reset signal generating circuit

Country Status (1)

Country Link
JP (1) JPS63266921A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5396115A (en) * 1993-10-26 1995-03-07 Texas Instruments Incorporated Current-sensing power-on reset circuit for integrated circuits
EP0700159A1 (en) * 1994-08-31 1996-03-06 STMicroelectronics S.r.l. Threshold detection circuit
US5523709A (en) * 1994-11-30 1996-06-04 Sgs-Thomson Microelectronics, Inc. Power-on reset circuit and method
US5555166A (en) * 1995-06-06 1996-09-10 Micron Technology, Inc. Self-timing power-up circuit
FR2757713A1 (en) * 1996-12-19 1998-06-26 Sgs Thomson Microelectronics Voltage controlled initialisation device for integrated circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5547727A (en) * 1978-10-03 1980-04-04 Fujitsu Ltd Power on reset circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5547727A (en) * 1978-10-03 1980-04-04 Fujitsu Ltd Power on reset circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5396115A (en) * 1993-10-26 1995-03-07 Texas Instruments Incorporated Current-sensing power-on reset circuit for integrated circuits
EP0700159A1 (en) * 1994-08-31 1996-03-06 STMicroelectronics S.r.l. Threshold detection circuit
US5696461A (en) * 1994-08-31 1997-12-09 Sgs-Thomson Microelectronics S.R.L. Power-on reset circuit
US5523709A (en) * 1994-11-30 1996-06-04 Sgs-Thomson Microelectronics, Inc. Power-on reset circuit and method
US5555166A (en) * 1995-06-06 1996-09-10 Micron Technology, Inc. Self-timing power-up circuit
US5691887A (en) * 1995-06-06 1997-11-25 Micron Technology, Inc. Self-timing power-up circuit
FR2757713A1 (en) * 1996-12-19 1998-06-26 Sgs Thomson Microelectronics Voltage controlled initialisation device for integrated circuit

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