JPS63228010A - Method for measuring depth of groove in semiconductor - Google Patents
Method for measuring depth of groove in semiconductorInfo
- Publication number
- JPS63228010A JPS63228010A JP6151987A JP6151987A JPS63228010A JP S63228010 A JPS63228010 A JP S63228010A JP 6151987 A JP6151987 A JP 6151987A JP 6151987 A JP6151987 A JP 6151987A JP S63228010 A JPS63228010 A JP S63228010A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- depth
- measuring
- film
- substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract 5
- 238000000034 method Methods 0.000 title claims abstract 4
- 239000000758 substrate Substances 0.000 claims abstract 4
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract 3
- 229920003169 water-soluble polymer Polymers 0.000 claims abstract 3
- 239000000126 substance Substances 0.000 claims 4
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract 9
- 238000005259 measurement Methods 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 230000002452 interceptive effect Effects 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 238000004528 spin coating Methods 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体基板中の溝の深さを精密に測定する方法
を提供するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention provides a method for precisely measuring the depth of trenches in semiconductor substrates.
従来の技術
半導体装置の高密度化にともなって、半導体基板中に数
μｍ深さの微細な寸法形状を有する溝を形成し、その溝
中に半導体デバイス（例えば、ＭＯ３型トランジスタ、
ダイナミックＲａｎｄｏｍＡｃｃｅｓｓ Ｍｅｍｏｒｙ
のメモリ容量やスタチックＲａｎｄｏｍ Ａｃｃｅｓｓ
Ｍｅｍｏｒｙの負荷抵抗等）を形成することが必要と
なってきた。溝中に高精度な半導体デバイスを形成する
ためには微細は構造を有する溝の深さを精密に測定する
必要がある。BACKGROUND OF THE INVENTION With the increasing density of semiconductor devices, grooves with minute dimensions and shapes with a depth of several μm are formed in semiconductor substrates, and semiconductor devices (for example, MO3 type transistors, etc.) are formed in the grooves.
Dynamic Random Access Memory
Memory capacity and static Random Access
It has become necessary to form a memory load resistance, etc. In order to form a highly accurate semiconductor device in a groove, it is necessary to precisely measure the depth of a groove having a fine structure.
第２図に従来の半導体基板中の断差を測定して溝深さを
測定する方法を示す。半導体基板１ｏの上面に形成され
た溝１３の表面を触針１１を左右に移動させて、その表
面の凹凸形状を測定する。FIG. 2 shows a conventional method of measuring a groove depth by measuring a difference in a semiconductor substrate. The stylus 11 is moved left and right on the surface of the groove 13 formed on the upper surface of the semiconductor substrate 1o to measure the uneven shape of the surface.
発明が解決しようとする問題点
しかし、図に示すように触針１１の先端部分１２の角度
は約９００であシ、溝底面の幅りが溝１３の深さの２倍
以上の広さがないと触針１１が底面に接触しないため測
定できない。溝深さが４μｍとすれば、８μｍ以上の幅
りが必要となり、第２図の左側に示すような狭い幅の溝
１４の深さは測定できない。Problems to be Solved by the Invention However, as shown in the figure, the angle of the tip portion 12 of the stylus 11 is about 900 degrees, and the width of the groove bottom is more than twice the depth of the groove 13. Otherwise, the stylus 11 will not contact the bottom surface and measurement will not be possible. If the groove depth is 4 μm, the width must be 8 μm or more, and the depth of the narrow groove 14 shown on the left side of FIG. 2 cannot be measured.
本発明の目的は、従来方法では測定できない溝幅の狭い
、深い溝の深さを精密に測定することにある。An object of the present invention is to accurately measure the depth of a narrow and deep groove that cannot be measured using conventional methods.
問題点を解決するための手段
本発明では、狭い幅の溝深さを測定するために、溝中に
ある物質を埋め込み、その物質の上面から光を照射して
、溝底面から反射して物質中で干渉してもどってくる光
を測定して溝中に埋め込んだ物質の厚さを測定して、そ
の溝の深さを知る。Means for Solving the Problems In the present invention, in order to measure the depth of a narrow groove, a material is buried in the groove, and light is irradiated from the top surface of the material, reflected from the bottom surface of the groove, and the material is measured. The depth of the groove can be determined by measuring the light that interferes and returns and measuring the thickness of the material embedded in the groove.
作 用
本発明によれば、無接触で極めて微細な測定を正確に行
うことが可能とな９、微細半導体集積回路等の製造に寄
与する。Effects According to the present invention, it is possible to accurately perform extremely fine measurements without contact9, contributing to the manufacture of fine semiconductor integrated circuits and the like.
実施例
第１図に本発明の一実施例を示す。半導体基板１ｏの上
面に溝１４を形成する（第１図ａ）。次に、物質１４と
してフォトレジスト膜や水溶性ポリマー膜等をスピンコ
ード法等を用いて塗布する。Embodiment FIG. 1 shows an embodiment of the present invention. A groove 14 is formed in the upper surface of the semiconductor substrate 1o (FIG. 1a). Next, a photoresist film, a water-soluble polymer film, or the like is applied as the substance 14 using a spin code method or the like.
上面よシ光干渉法による膜厚測定器を用いて溝部ａと溝
近傍の表面部すの物質２ｏの膜厚を測定し、その差より
溝深さを測定する（第１図ｂ）。The film thickness of the material 2o on the groove portion a and the surface portion near the groove is measured using a film thickness measuring device using optical interferometry from the top surface, and the groove depth is determined from the difference (FIG. 1b).
又は、物質１６を塗布後に表面上の物質膜のみを機械的
に削りとるか、又はドライエッチ技術を用いてエッチパ
ンク溝中のみに物質３ｏを埋め込んで、その物質２ｏの
厚さを測定すれば、溝の幅が狭い溝であっても溝深さを
直接的に削ることができる（第１図Ｃ）。Alternatively, after applying the substance 16, only the material film on the surface is mechanically scraped off, or by dry etching technology, the substance 3o is buried only in the etch puncture grooves, and the thickness of the substance 2o is measured. , even if the width of the groove is narrow, the depth of the groove can be directly cut (FIG. 1C).
測定後、物質２０．３０がフォトレジスト膜の場合には
ＨＳｏやＨＮＯ液、又は０２プラズマ中のドライエッチ
で除去したシ、水溶性ポリマー膜の場合には純水で除去
すればよい。なお、物質２０．３０としては塗布等によ
る形成が容易で、反射光の干渉が測定可能なものであれ
ば様々のものが使用可能である。After the measurement, if the substance 20.30 is a photoresist film, it may be removed by dry etching in HSo, HNO solution, or 02 plasma, and if it is a water-soluble polymer film, it may be removed with pure water. Note that various substances can be used as the substance 20.30 as long as it is easy to form by coating or the like and the interference of reflected light can be measured.
発明の効果
本発明によれば、顕微鏡で観察しながら直径数μｍの光
照射部分を特定し、その部分の溝の深さｔ測定できる。Effects of the Invention According to the present invention, it is possible to specify a light-irradiated portion with a diameter of several μm while observing it with a microscope, and to measure the depth t of the groove in that portion.
従って、実際の半導体デバイスに使用している溝幅での
溝深さが直接的に且つ精密に測定でき、高密度かつ微細
な半導体素子等の高精度な製造に寄与するものである。Therefore, the groove depth at the groove width used in an actual semiconductor device can be directly and precisely measured, contributing to the highly accurate manufacture of high-density and fine semiconductor elements.
第１図は本発明の実施例の溝深さ測定の方法を示す断面
図、第２図は従来の溝深さ測定方法を示す断面図である
。
１４・・・・・・半導体基板中に形成した溝、１５・・
・・・・溝中に埋め込んだ物質。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図 １４−ｓｌ。FIG. 1 is a sectional view showing a groove depth measuring method according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional groove depth measuring method. 14... Groove formed in semiconductor substrate, 15...
...Substance embedded in the groove. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 14-sl.
Claims (2)
物質を埋め込み、前記物質の上面から光照射して溝底面
からの反射光の物質中の干渉を測定するようにした半導
体基板中の溝深さ測定方法。(1) A semiconductor substrate including the step of forming a groove in a semiconductor substrate, embedding a substance in the groove, irradiating light from the top surface of the substance, and measuring the interference in the substance of light reflected from the bottom of the groove. How to measure the depth of the groove inside.
膜を用いる特許請求の範囲第１項記載の半導体基板中の
溝深さ測定方法。(2) A method for measuring groove depth in a semiconductor substrate according to claim 1, using a photoresist film or a water-soluble polymer film as the substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6151987A JPS63228010A (en) | 1987-03-17 | 1987-03-17 | Method for measuring depth of groove in semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6151987A JPS63228010A (en) | 1987-03-17 | 1987-03-17 | Method for measuring depth of groove in semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63228010A true JPS63228010A (en) | 1988-09-22 |
Family
ID=13173419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6151987A Pending JPS63228010A (en) | 1987-03-17 | 1987-03-17 | Method for measuring depth of groove in semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63228010A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08236592A (en) * | 1995-02-28 | 1996-09-13 | Nec Corp | Measuring method of stepped part |
| US6500683B1 (en) | 2001-10-16 | 2002-12-31 | Mitsubishi Denki Kabushiki Kaisha | Method of measuring trench depth of semiconductor device |
| CN104576428A (en) * | 2013-10-16 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | Film thickness detection method |
| CN104882389A (en) * | 2014-02-28 | 2015-09-02 | 无锡华润上华科技有限公司 | Semiconductor device measurement method |
| CN106441143A (en) * | 2016-10-12 | 2017-02-22 | 哈尔滨工业大学 | Method for measuring depth of groove sample by using optical microscopic mode |
| CN108592847A (en) * | 2018-07-27 | 2018-09-28 | Oppo（重庆）智能科技有限公司 | The method that the groove depth of electronic device is measured using measuring device |
-
1987
- 1987-03-17 JP JP6151987A patent/JPS63228010A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08236592A (en) * | 1995-02-28 | 1996-09-13 | Nec Corp | Measuring method of stepped part |
| US6500683B1 (en) | 2001-10-16 | 2002-12-31 | Mitsubishi Denki Kabushiki Kaisha | Method of measuring trench depth of semiconductor device |
| CN104576428A (en) * | 2013-10-16 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | Film thickness detection method |
| CN104882389A (en) * | 2014-02-28 | 2015-09-02 | 无锡华润上华科技有限公司 | Semiconductor device measurement method |
| CN106441143A (en) * | 2016-10-12 | 2017-02-22 | 哈尔滨工业大学 | Method for measuring depth of groove sample by using optical microscopic mode |
| CN108592847A (en) * | 2018-07-27 | 2018-09-28 | Oppo（重庆）智能科技有限公司 | The method that the groove depth of electronic device is measured using measuring device |
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