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JPS63202922A - Cleaner for semiconductor wafer - Google Patents

Cleaner for semiconductor wafer

Info

Publication number
JPS63202922A
JPS63202922A JP3642787A JP3642787A JPS63202922A JP S63202922 A JPS63202922 A JP S63202922A JP 3642787 A JP3642787 A JP 3642787A JP 3642787 A JP3642787 A JP 3642787A JP S63202922 A JPS63202922 A JP S63202922A
Authority
JP
Japan
Prior art keywords
wafer
dust
cleaning chamber
discharged
adhesion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3642787A
Other languages
Japanese (ja)
Inventor
Yukihiro Yanabe
矢鍋 幸博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP3642787A priority Critical patent/JPS63202922A/en
Publication of JPS63202922A publication Critical patent/JPS63202922A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cleaning In General (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To prevent re-adhesion to the surface of an opposed wafer of dust, and to obviate the lowering of yield by removing dust adhering on the rear of the wafer by using changes into water and carbon dioxide of an organic compound due to the oxidative effect of O3. CONSTITUTION:A wafer to be treated 1 is carried to a wafer susceptor 4 in a cleaning chamber 6, and O3 is discharged from O3 discharge openings 3 formed to an O3 discharge nozzle 2 for an O3 discharger toward the rear of the wafer from the lower section of the wafer 1 and the rear of the wafer is washed. The surface of the wafer 1 is protected by a purge gas blown off from a purging nozzle 5, and an atmosphere in the cleaning chamber 6 is discharged from an exhaust opening 7; the wafer from which dust adhering on the rear is removed is forwarded to the next process. Accordingly, adhesion to the surface of the opposed wafer of dust on the rear in a wet process is prevented, thus improving yield.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造装置に関し、特に半導体基板
の裏面を洗浄する洗浄装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device manufacturing apparatus, and particularly to a cleaning apparatus for cleaning the back surface of a semiconductor substrate.

〔従来の技術〕[Conventional technology]

従来、半導体装置製造工程の半導体基板(以下ウェーハ
という)に対するエツチングなどの処理後の洗浄におい
て、ウェーハ裏面に付着したゴミは殆んど無視されて、
何らの対策も実施されないのが実状であった。
Conventionally, when cleaning semiconductor substrates (hereinafter referred to as wafers) after processing such as etching in the semiconductor device manufacturing process, dust adhering to the backside of the wafers is almost ignored.
The reality was that no countermeasures were taken.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来の半導体装置製造工程において、ウェーハ
の裏面に付着したゴミを除去することは無視されておっ
たので、洗浄、ハクリヤエツチング等のウェット工程で
、ウェーハ裏面に付着していたゴミが液中へ遊離し、そ
れが向い合うウェーハ表面へ再付着し、歩留低下の一要
因となっている。
In the conventional semiconductor device manufacturing process mentioned above, removing dust attached to the back side of the wafer was ignored, so during wet processes such as cleaning and cleaning, the dust attached to the back side of the wafer was removed by liquid. It is released into the interior of the wafer, and then re-adhered to the surface of the opposing wafer, causing a decrease in yield.

〔問題点を解決するだめの手段〕[Failure to solve the problem]

本発明のウェーハ裏面洗浄装置は、ウェーハ裏面に付着
したゴミを除去するために、ウェーハ裏面に03を吹き
つける03吐出装置を備えており、ウェーハ裏面に付着
したゴミを、03の酸化作用による有機化合物の水や炭
酸ガスへの変化を用いて除去するものである。
The wafer backside cleaning device of the present invention is equipped with an 03 discharge device that sprays 03 onto the wafer backside in order to remove dust attached to the wafer backside. It removes compounds by converting them into water and carbon dioxide.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明、の一実施例を示す断面図である。FIG. 1 is a sectional view showing one embodiment of the present invention.

第1図において、被処理ウェーハ1は、洗浄室6内のウ
ェーハ支持台4に搬送された後、ウェーハ1の下部から
ウェーハ裏面に向けて、03吐出装置の03吐出ノズル
2に設けられた03吐出口3よシ、03が吐出され洗浄
を受ける。ウェーハ1の表面は、パージノズル5よシ吹
き出すパージガスにより保訛ヲ受ける。洗浄室6内の雰
囲気は、排気ロアから排気される。以上のようにして、
裏面に付着しているゴミが除去されたウェーハは、次工
程に送られる。
In FIG. 1, a wafer 1 to be processed is transferred to a wafer support 4 in a cleaning chamber 6, and then a 03 discharge nozzle 2 of an 03 discharge device is installed in a direction from the bottom of the wafer 1 toward the back surface of the wafer. From the discharge port 3, 03 is discharged and cleaned. The surface of the wafer 1 is protected from damage by the purge gas blown out from the purge nozzle 5. The atmosphere inside the cleaning chamber 6 is exhausted from the exhaust lower. As above,
The wafer from which the dust adhering to the back surface has been removed is sent to the next process.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明のウェーハ洗浄装置によっ
て、ウェーハ裏面ゴミを除去することによシ、ウェット
工程における裏面ゴミの向い合うウェーハの表面への付
着を防止し、歩留向上ができる効果がある。
As explained above, the wafer cleaning apparatus of the present invention has the effect of removing dust from the backside of the wafer, preventing the backside dust from adhering to the surface of the facing wafer during the wet process, and improving the yield. be.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の断面図である。 3・・・・・・03吐出口、4・・・・・・ウェーハ支
持台、訃・・・・・パージノズル、6・・・・・・洗浄
室。
FIG. 1 is a sectional view of an embodiment of the present invention. 3...03 discharge port, 4...wafer support stand, bottom...purge nozzle, 6...cleaning chamber.

Claims (1)

【特許請求の範囲】[Claims]  洗浄室内に被洗浄半導体基板を支持する半導体基板支
持台と、この基板支持台に支持された半導体基板の裏面
にO_3を吐出するO_3吐出装置とを具備することを
特徴とする半導体基板洗浄装置。
A semiconductor substrate cleaning apparatus comprising: a semiconductor substrate support that supports a semiconductor substrate to be cleaned in a cleaning chamber; and an O_3 discharge device that discharges O_3 onto the back surface of the semiconductor substrate supported by the substrate support.
JP3642787A 1987-02-18 1987-02-18 Cleaner for semiconductor wafer Pending JPS63202922A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3642787A JPS63202922A (en) 1987-02-18 1987-02-18 Cleaner for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3642787A JPS63202922A (en) 1987-02-18 1987-02-18 Cleaner for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS63202922A true JPS63202922A (en) 1988-08-22

Family

ID=12469519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3642787A Pending JPS63202922A (en) 1987-02-18 1987-02-18 Cleaner for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS63202922A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106927A (en) * 1988-10-17 1990-04-19 Fujitsu Ltd Manufacturing method of semiconductor device
DE19502777A1 (en) * 1994-02-22 1995-08-24 Siemens Ag Method for plasma-assisted backside etching of a semiconductor wafer in the case of a lacquer-free front surface of a pane

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59161824A (en) * 1983-03-04 1984-09-12 Seimitsu Entapuraizu:Kk Light irradiating device
JPS61194830A (en) * 1985-02-25 1986-08-29 Dainippon Screen Mfg Co Ltd Organic material removing device for substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59161824A (en) * 1983-03-04 1984-09-12 Seimitsu Entapuraizu:Kk Light irradiating device
JPS61194830A (en) * 1985-02-25 1986-08-29 Dainippon Screen Mfg Co Ltd Organic material removing device for substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106927A (en) * 1988-10-17 1990-04-19 Fujitsu Ltd Manufacturing method of semiconductor device
DE19502777A1 (en) * 1994-02-22 1995-08-24 Siemens Ag Method for plasma-assisted backside etching of a semiconductor wafer in the case of a lacquer-free front surface of a pane

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