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JPS631758B2 - - Google Patents

Info

Publication number
JPS631758B2
JPS631758B2 JP55104140A JP10414080A JPS631758B2 JP S631758 B2 JPS631758 B2 JP S631758B2 JP 55104140 A JP55104140 A JP 55104140A JP 10414080 A JP10414080 A JP 10414080A JP S631758 B2 JPS631758 B2 JP S631758B2
Authority
JP
Japan
Prior art keywords
type
gate
semiconductor substrate
drain
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55104140A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5730368A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10414080A priority Critical patent/JPS5730368A/ja
Publication of JPS5730368A publication Critical patent/JPS5730368A/ja
Publication of JPS631758B2 publication Critical patent/JPS631758B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/202FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/165Tunnel injectors

Landscapes

  • Thyristors (AREA)
JP10414080A 1980-07-29 1980-07-29 Tunnel fet Granted JPS5730368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10414080A JPS5730368A (en) 1980-07-29 1980-07-29 Tunnel fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10414080A JPS5730368A (en) 1980-07-29 1980-07-29 Tunnel fet

Publications (2)

Publication Number Publication Date
JPS5730368A JPS5730368A (en) 1982-02-18
JPS631758B2 true JPS631758B2 (fr) 1988-01-13

Family

ID=14372785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10414080A Granted JPS5730368A (en) 1980-07-29 1980-07-29 Tunnel fet

Country Status (1)

Country Link
JP (1) JPS5730368A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0624264B2 (ja) * 1986-02-04 1994-03-30 工業技術院長 電界効果トランジスタ
JP3431706B2 (ja) * 1994-12-16 2003-07-28 新日本石油化学株式会社 積層体・不織布または織布並びにそれらを用いた強化積層体
US6054086A (en) * 1995-03-24 2000-04-25 Nippon Petrochemicals Co., Ltd. Process of making high-strength yarns
US5954914A (en) * 1996-02-23 1999-09-21 Nippon Petrochemicals Company, Limited Web lamination device

Also Published As

Publication number Publication date
JPS5730368A (en) 1982-02-18

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