JPS63160229A - Photoresist removing device - Google Patents

Abstract

PURPOSE:To enhance the efficiency of removing ashing and to improve a working efficiency by providing a corona generator or a hydrogen plasma generator to activate oxidation-reduction reaction, and providing a preposition chamber to reduce the number of vacuum processes. CONSTITUTION:A wafer 10 necessary to remove a photoresist is introduced into a preposition chamber 2, which is then evacuated in vacunm, and predetermined number of wafers 10 are fed to a processing chamber 1. Then, the chamber 1 is evacuated in vacuum, oxygen gas or ozone is supplied from a supply hole 7, and ozone is generated by irradiating it with an ultraviolet ray. The photoresist is ashed by the ozone, and discharged from a discharge hole 8. Further, a corona generator 5 generates ozone near the wafer 10 to completely remove the remaining resist. Since the chamber 2 of vacuum state is provided, it is not necessary to evacuate in vacuum the chamber 1 each time the wafer 10 is inserted. Thus, the ashing removal can be enhanced in its efficiency, and its working efficiency can be enhanced.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for ashing and removing photoresist on the surface of a wafer used in the formation of semiconductor integrated circuits and the like.

[Conventional technology]

Conventional photoresist ashing equipment uses oxygen plasma, and in addition to the action of this oxygen plasma, irradiation of short wavelength ultraviolet rays promotes the generation of ozone, and the action of ozone efficiently and reliably ashes the photoresist. (For example, Japanese Patent Application Laid-Open No. 61-123
No. 143).

[Problem that the invention seeks to solve]

The present invention provides an apparatus that can remove photoresist more reliably in a shorter time than these conventional ash removal apparatuses.

[Means to solve the problem]

Therefore, it has a supply hole 7 for supplying oxygen gas, ozone, nitrogen gas, etc., and an exhaust hole 8 necessary for reducing the pressure to a vacuum and exhausting the generated reaction gas, and a processing chamber 1 in which the wafer IO is located. The wafer 1 is installed in the processing chamber 1.
A heat table 3 heats the wafer IO to a temperature that promotes oxidation or reduction reaction while heating the wafer IO, an ultraviolet lamp 4 that irradiates the wafer IO to generate ozone near the wafer 10, and a corona provided in the processing chamber l. Alternatively, a vacuum is provided between the hydrogen plasma generator 5, the processing chamber 1 and the partition wall 9, and accommodates a plurality of wafers 10 before being transferred to the processing chamber 1 and after the photoresist has been removed in the processing chamber 1. Atmosphere antechamber 2 and.

A gate pulp 6 is provided in the partition wall 9 and forms an entrance/exit large enough for the wafer 10 to pass through.

[Effect]

The operation of the device of the present invention will be explained below.

First, after the etching process has been completed and a plurality of wafers 1O from which photoresist needs to be removed are placed in the pretreatment chamber 2, the pretreatment chamber 2 is placed in a vacuum atmosphere. Of the plurality of wafers IO, the number of wafers 10 to be processed in the processing chamber 1 at one time is sent to the processing chamber 1 through the gate valve 6.

This processing chamber 1 is made into a vacuum state by exhausting air through an exhaust hole 8, and then oxygen gas, ozone, nitrogen gas, or the like is supplied through a supply hole 7.

Then, ozone is generated by irradiating these gases with ultraviolet rays, and the ozone and the photoresist are oxidized and incinerated, removed from the surface of the wafer 10, and discharged from the exhaust hole 8.

Further, since ozone is generated near the wafer 10 by the corona generator 5 or hydrogen is generated by the hydrogen plasma generator 5, oxidation occurs in the case of ozone and reduction occurs in the case of hydrogen, and the photo of the portion that is difficult to remove is generated. Resist is also reliably removed.

The wafer 10 from which the photoresist has been removed is returned to the pretreatment chamber 2, and a new wafer IO placed in the pretreatment chamber 2 is sent into the processing chamber 1. Then, when all the wafers 10 placed in the pretreatment chamber 2 are subjected to the removal process and returned to the pretreatment chamber 2, all of the wafers 10 are taken out and new wafers 10 are placed.

Therefore, until the photoresist removal process for all wafers 10 placed in the pretreatment chamber 2 is completed, the pretreatment chamber 2 is maintained in a vacuum atmosphere and the processing chamber 1 is maintained in an atmosphere necessary for processing. This eliminates the need to create a vacuum atmosphere by discharging the invading atmosphere every time the wafer 10 in the processing chamber 1 is replaced, unlike the conventional ashing removal apparatus.

Furthermore, since the wafer 10 is heated by a hot plate in the processing chamber 1, the reaction with ozone or hydrogen becomes active, and the photoresist can be removed in a shorter time than with conventional equipment.

Note that the gate pulp 6 is closed during ashing and removal to maintain the optimum atmosphere in the processing chamber 1.

〔Example〕

One embodiment will be described with reference to FIGS. 1 and 2.

The pre-chamber 2 is provided with two doors, a first door 12 and a second floor 13. The wafer 10 is put in through the second door 12, and the wafer 10 is inserted into the second floor 13.
The mechanism is not taken out from the original.

A large number of wafers 1O are stored in a cassette 1), put into the pre-chamber 2 through the first door 12, and placed on the loader 14. Then, out of this large number of wafers, some □4 wafers□ in this embodiment are placed in the processing chamber 1 by the handler 16.
The sample is automatically transported by the machine, placed on the heat table 3, and processed.

Wafer I from which photoresist has been ashed and removed in processing chamber I
O is conveyed through the gate valve 6 again onto the unloader I5 and inserted into the cassette 1) under the second ri 13,
The entire cassette 11 is taken out from the second bed 13.

Three supply holes 7 are provided for feeding oxygen gas, ozone, nitrogen gas, etc., respectively.

There is only one exhaust hole 8 for this, and it is used to create a vacuum atmosphere in the processing chamber 1 and to exhaust reaction gas generated by oxidation or reduction. still.

This exhaust hole 8 is also used to create a vacuum atmosphere in the pre-chamber 2.6 Therefore, in the case of this embodiment, the gate valve 6 is left open and the process chamber 1 and pre-chamber 2 are opened at the same time. This creates a vacuum atmosphere.

The heating temperature of the wafer 10 by the heat table 3 varies depending on the type of photoresist, but is usually 100°C.
A range of 250°C to 250°C is suitable.

〔Effect of the invention〕

As described above, the present invention is an apparatus for ashing and removing photoresist by oxidation with ozone or reduction with hydrogen. By heating the wafer with a table, the oxidation or reduction reaction was activated and the ash removal was accelerated.

Also, by providing a pre-chamber with a vacuum atmosphere.

Since it is not necessary to create a vacuum atmosphere every time a wafer is inserted into the processing chamber, it exhibits an excellent effect of significantly improving work efficiency.

[Brief explanation of the drawing]

FIG. 1 is a front view showing one embodiment, and FIG. 2 is a plan view thereof. Explanation of symbols 1: Processing chamber, 2: Preliminary chamber. 3: Heat table, 4: Ultraviolet lamp. 5: Generator, 6: Gate valve. 7: Supply hole, 8: Exhaust hole, 9: Partition wall. 10: Wafer, 1): Case 12: Door. 13: Second door, 14: Rogue. 15: Unloader, 16: Handler. Zuban 4 course 1-11's 61 furnace! 2---nl1) B
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Claims (1)

[Scope of Claims] An apparatus for ashing and removing photoresist remaining on the surface of a wafer (10) after etching processing, comprising a supply hole (7) for supplying oxygen gas, ozone, nitrogen gas, etc. )
and a processing chamber (1) in which the wafer (10) is located, having an exhaust hole (8) for vacuum reduction and exhausting generated reaction gas, and a processing chamber (1) installed in the processing chamber (1), a heat table (3) on which the wafer (10) is placed and which heats the wafer (10) to a temperature that promotes oxidation or reduction reaction;
an ultraviolet lamp (4) that irradiates and generates ozone near the wafer (10); a corona or hydrogen plasma generator (5) provided in the processing chamber (1); and a partition between the processing chamber (1) and the partition wall. (9) on both sides of the wafer (1), before being transported to the processing chamber (1) and after the photoresist is removed in the processing chamber (1).
0), and a gate valve (6) provided in the partition wall (9) to form an entrance and exit large enough for the wafer (10) to pass through. removal device.