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JPS63149345A - High strength copper alloy having high electrical conductivity and improved heat resistance - Google Patents

High strength copper alloy having high electrical conductivity and improved heat resistance

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Publication number
JPS63149345A
JPS63149345A JP29661486A JP29661486A JPS63149345A JP S63149345 A JPS63149345 A JP S63149345A JP 29661486 A JP29661486 A JP 29661486A JP 29661486 A JP29661486 A JP 29661486A JP S63149345 A JPS63149345 A JP S63149345A
Authority
JP
Japan
Prior art keywords
heat resistance
alloy
strength
improved heat
copper alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29661486A
Other languages
Japanese (ja)
Inventor
Hidehiko So
宗 秀彦
Hiroaki Watanabe
宏昭 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP29661486A priority Critical patent/JPS63149345A/en
Publication of JPS63149345A publication Critical patent/JPS63149345A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To manufacture a high strength Cu alloy having high electrical conductivity and improved heat resistance by adding specified percentages of Ni, Si and B to Cu. CONSTITUTION:A Cu alloy consisting of 0.4-4.0wt% Ni, 0.1-1.0wt% Si, 0.001-0.1wt% B and the balance Cu with inevitable impurities is manufactured. The alloy may further contain 0.001-3.0wt% in total of one or more kinds of elements selected among Zn, P, Sn, As, Cr, Mg, Mn, Sb, Fe, Co, Al, Ti, Zr, Be, Ag, Pb and lanthanoids as secondary components and the amt. of O among the impurities is restricted to <=0.020wt%. A high strength Cu alloy having high electrical conductivity and suitable for use as a lead material for a semiconductor device or an electrically conductive spring material is obtd.

Description

【発明の詳細な説明】 〔目 的〕 本発明は、トランジスタや集積回路(1C)などの半導
体機器のリード材、コネクター、端子、リレー、スイッ
チ等の導電性ばね材に適する銅合金に関するものである
[Detailed Description of the Invention] [Object] The present invention relates to a copper alloy suitable for lead materials for semiconductor devices such as transistors and integrated circuits (1C), and conductive spring materials for connectors, terminals, relays, switches, etc. be.

〔従来技術及び問題点〕[Prior art and problems]

従来、半導体機器のリード材としては、熱膨張係数が低
く、素子及びセラミックとの接着及び封着性の良好なコ
バール(Fe−29Ni−16Co) 、 42合金(
Fe−42Ni)などの高ニッケル合金が好んで使われ
てきた。しかし、近年、半導体回路の集積度の向上に伴
い消費電力の高いICが多くなってきたことと、封止材
料として樹脂が多く使用され、かつ素子とリードフレー
ムの接着も改良が加えられたことにより、使用されるリ
ード材も放熱性のよい銅基合金が使われるようになって
きた。
Conventionally, lead materials for semiconductor devices include Kovar (Fe-29Ni-16Co) and 42 alloy (Fe-29Ni-16Co), which have a low coefficient of thermal expansion and have good adhesion and sealing properties with elements and ceramics.
High nickel alloys such as Fe-42Ni) have been preferred. However, in recent years, as the degree of integration of semiconductor circuits has improved, the number of ICs with high power consumption has increased, resins have been increasingly used as sealing materials, and improvements have been made to the bonding between elements and lead frames. As a result, copper-based alloys with good heat dissipation properties have come to be used as lead materials.

一般に半導体機器のリード材としては以下のような特性
が要求されている。
Generally, lead materials for semiconductor devices are required to have the following properties.

(1)リードが電気信号伝達部であるとともに、パッケ
ージング工程中及び回路使用中に発生する熱を外部に放
出する機能を併せ持つことを要求される為、優れた熱及
び電気伝導性を示すもの。
(1) Leads must exhibit excellent thermal and electrical conductivity, as they are required to act as an electrical signal transmission unit and also have the function of discharging heat generated during the packaging process and circuit use to the outside. .

(2)リードとモールドとの密着性が半導体素子保護の
観点から重要であるため、リード材とモールド材の熱膨
張係数が近いこと。
(2) Since the adhesion between the lead and the mold is important from the viewpoint of protecting the semiconductor element, the thermal expansion coefficients of the lead material and the mold material should be similar.

(3)パッケージング時の種々の加熱工程が加わる為、
耐熱性が良好であること。
(3) Due to the addition of various heating processes during packaging,
Good heat resistance.

(4)リードはリード材を抜き打ち加工し、又曲げ加工
して作製されるものがほとんどである為、これらの加工
性が良好なこと。
(4) Most leads are manufactured by punching or bending lead material, so the processability of these is good.

(5)リードは表面に貴金属のメッキを行う為、これら
貴金属とのメッキ密着性が良好であること。
(5) Since the surface of the lead is plated with precious metals, the plating adhesion with these precious metals must be good.

(6)パッケージング後に封止材の外に露出している。(6) Exposed outside the sealing material after packaging.

いわゆるアウター・リード部に半田付けするものが多い
ので良好な半田付は性を示すこと。
Many items are soldered to the so-called outer leads, so good soldering is a sign of good soldering.

(7)機器の信頼性及び寿命の観点から耐食性が良好な
こと。
(7) Good corrosion resistance from the standpoint of equipment reliability and lifespan.

(8)価格が低廉であること。(8) The price must be low.

又、従来、電気機器用ばね、計測器用ばね、スイッチ、
コネクター等に用いられるばね用材料としては、安価な
黄銅、優れたばね特性及び耐食性を有する洋白、あるい
は優れたばね特性を有するりん青銅が使用されていた。
In addition, conventional springs for electrical equipment, springs for measuring instruments, switches,
As materials for springs used in connectors and the like, inexpensive brass, nickel silver, which has excellent spring properties and corrosion resistance, or phosphor bronze, which has excellent spring properties, have been used.

しかし、黄銅は強度、ばね特性が劣っており、又強度、
ばね特性の優れた洋白、りん青銅も洋白は18重量%の
Ni、りん青銅は8重量%のSnを含むため、yK料の
而及び製造上熱間加工性が悪い等の加工上の制約も加わ
り高価な合金であった。さらには電気機器用等に用いら
れる場合、電気伝導度が低いという欠点を有していた。
However, brass has inferior strength and spring characteristics;
Nickel silver and phosphor bronze, both of which have excellent spring properties, contain 18% by weight of Ni and 8% by weight of Sn. It was an expensive alloy with additional restrictions. Furthermore, when used for electrical equipment, etc., it has a drawback of low electrical conductivity.

従って、導電性が良好であり、ばね特性に優れた安価な
合金の現出が待たれていた。
Therefore, the emergence of an inexpensive alloy with good electrical conductivity and excellent spring properties has been awaited.

〔課題の解決点〕[Points to solve the problem]

本発明はかかる点に鑑みなされたもので、従来の銅基合
金のもつ欠点を改良し、半導体機器のリード材及び導電
性ばね材として好適な特性を有する銅合金を提供しよう
とするものである。
The present invention has been made in view of the above points, and aims to improve the drawbacks of conventional copper-based alloys and provide a copper alloy having characteristics suitable for use as lead materials and conductive spring materials for semiconductor devices. .

特にCu −N i −S i系合金を改良し、要求に
合致した銅合金を提供しようとするものである。
In particular, the aim is to improve Cu-Ni-Si alloys and provide copper alloys that meet the requirements.

すなわち、Cu−Ni−5i系合金は優れた導電性と強
度を兼ね備えた合金であるが、ベリリウム鋼、チタン銅
等の高強度の銅合金と比較すると、強度、耐食性が劣る
That is, although the Cu-Ni-5i alloy has both excellent conductivity and strength, it is inferior in strength and corrosion resistance when compared to high-strength copper alloys such as beryllium steel and titanium copper.

本発明者らが鋭意研究を行ったところ、Cu−N i 
−S i系合金にBを添加することにより、耐熱性が向
上することが判明した。
The present inventors conducted intensive research and found that Cu-N i
It has been found that heat resistance is improved by adding B to the -Si alloy.

〔発明の構成〕[Structure of the invention]

本発明は、 (1)Ni0.4〜4.0wt%、Si0.1〜1.0
wt%、B0.OO1〜0.1wt%を含み、残部Cu
及び不可避的不純物からなる耐熱性を向上させた高力高
導電銅合金。
The present invention includes: (1) Ni0.4-4.0wt%, Si0.1-1.0
wt%, B0. Contains 1 to 0.1 wt% of OO, the balance is Cu
A high-strength, high-conductivity copper alloy with improved heat resistance and unavoidable impurities.

(2)Ni0.4〜4.0wt%、Si0.1〜1.0
wむ%、B0.OO1〜0.1wt%を含み、さらに副
成分として、Z0.P、S0.As、Cr、MglM0
.Sb、Fe、C0.A1.Ti、Zr、Be、Ag、
Pb、ランタノイド元素からなる1種又は2種以上を総
量で、0.OOL〜3.0wt%含み、残部Cu及び不
可避的不純物からなる耐熱性を向上させた高力高導電銅
合金。
(2) Ni0.4-4.0wt%, Si0.1-1.0
wmu%, B0. Contains 1 to 0.1 wt% of OO, and further contains Z0. P, S0. As, Cr, MglM0
.. Sb, Fe, C0. A1. Ti, Zr, Be, Ag,
The total amount of one or more of Pb and lanthanoid elements is 0. A high-strength, high-conductivity copper alloy with improved heat resistance, containing ~3.0 wt% of OOL and the balance being Cu and unavoidable impurities.

(3)Ni 0.4〜4.0wt%、Si0.1〜1.
0wt%、B0.OO1〜0.1wt%を含み、残部C
u及び不可避的不純物からなり、該不純物のうち、Oの
含有量が0.0020wt%以下であることを特徴とす
る。耐熱性を向上させた高力高導電銅合金。
(3) Ni 0.4-4.0 wt%, Si 0.1-1.
0wt%, B0. Contains 1 to 0.1 wt% of OO, the remainder C
It is characterized in that the content of O among the impurities is 0.0020 wt% or less. High-strength, high-conductivity copper alloy with improved heat resistance.

(4)Ni0.4〜4.0wt%、Si0.1〜1.0
wt%、80.001〜0.1wt%を含み、さらに副
成分として、Z0.P、S0.As。
(4) Ni0.4-4.0wt%, Si0.1-1.0
wt%, 80.001 to 0.1 wt%, and further contains Z0. P, S0. As.

Cr、Mg%M0.Sb、Fe、C0.A1.Ti、Z
r、Be、Ag、Pb、ランタノイド元素からなる1種
又は2種以上を総量で、0.001〜3.0wt%含み
、残部Cu及び不可避的不純物からなり、該不純物のう
ち、0の含有量が0゜0020wt%以下であることを
特徴とする、耐熱性を向上させた高力高導電銅合金。
Cr, Mg%M0. Sb, Fe, C0. A1. Ti,Z
Contains one or more of r, Be, Ag, Pb, and lanthanide elements in a total amount of 0.001 to 3.0 wt%, with the balance consisting of Cu and inevitable impurities, of which the content is 0. A high-strength, high-conductivity copper alloy with improved heat resistance, characterized in that 0°0020 wt% or less.

であり、半導体機器リード材又は導電性ばね材として、
優れた導電性と強度を兼ね備え、又優れた耐熱性を有し
、さらに折り曲げ性、半田付は性、めっき性、エツチン
グ性をも著しく改良したCu−N i −S i系合金
を特徴とするものである。
As a semiconductor device lead material or a conductive spring material,
It features a Cu-Ni-Si alloy that has excellent conductivity and strength, as well as excellent heat resistance, and has significantly improved bendability, solderability, plating performance, and etching performance. It is something.

〔発明の詳細な説明〕[Detailed description of the invention]

次に本発明合金を構成する合金成分の限定理由を説明す
る。
Next, the reason for limiting the alloy components constituting the alloy of the present invention will be explained.

NiはCu中にSiと共添し、溶体化処理後時効処理を
行うことにより、Ni、Si 等の金属間化合物として
析出し、導電率を低下させずに強度を向上させるためで
あるが、0.4〜4.0wt%添加する理由は、0.4
wt%未満では強度の向上は認められず、4.0wt%
を超えると導電性および加工性が劣化するためである。
This is because Ni is co-added with Si in Cu and precipitated as intermetallic compounds such as Ni and Si by performing aging treatment after solution treatment to improve strength without reducing conductivity. The reason for adding 0.4 to 4.0 wt% is that 0.4
No improvement in strength was observed at less than 4.0 wt%.
This is because conductivity and workability will deteriorate if it exceeds this range.

Siも同様にNiと共添し、金属間化合物として析出す
ることにより、導電率を低下させずに強度を向上させる
元素であるが、0.1〜1.0wt%添加する理由は、
0.1wt%未満では強度の向上は認められず、1.0
wt%を超えると導電率が低下し、半田付は性、加工性
が劣化するためである。望ましくは、NiとSiの添加
量比は。
Similarly, Si is an element that improves strength without reducing conductivity by co-adding with Ni and precipitating as an intermetallic compound, but the reason for adding 0.1 to 1.0 wt% is as follows.
At less than 0.1 wt%, no improvement in strength was observed;
This is because if it exceeds wt%, the conductivity decreases, and the soldering properties and workability deteriorate. Desirably, the addition amount ratio of Ni and Si is as follows.

金属間化合物(Ni2Si)の組成に近い(Ni/5i
)=(4/ l)が良い。
Close to the composition of intermetallic compound (Ni2Si) (Ni/5i
)=(4/l) is good.

Bは強度、耐熱性を向上させる添加元素であるが、添加
量を0.001〜0.1wt%とする理由は、0.00
1wt%未満では、強度、耐熱性は向上しないので添加
の効果がなく、0.1wt%を超えると十分な強度、耐
熱性は得られるが、導電性が低下し、半田付は性が劣化
するためである。さらに副成分として、Z0.P、S0
.As、Cr、Mg、M0.Sb、Fe、C0.A1、
Ti、Zr、Be、Ag、Pb、B、ランタノイド元素
からなる1種又は2種以上を0.001〜3゜0wt%
添加するのは、強度を向上させるためであるが、0.0
01wt%未満ではその効果はなく、3.0wt%を超
えると導電性、加工性が劣化するためである6 0含有量を0.0020重景%以下とする理由は、0が
存在するとSiと結合し酸化物となり。
B is an additive element that improves strength and heat resistance, but the reason why the amount added is 0.001 to 0.1 wt% is 0.00
If it is less than 1wt%, the strength and heat resistance will not improve, so there is no effect of adding it, and if it exceeds 0.1wt%, sufficient strength and heat resistance can be obtained, but the conductivity will decrease and the solderability will deteriorate. It's for a reason. Furthermore, Z0. P, S0
.. As, Cr, Mg, M0. Sb, Fe, C0. A1,
0.001 to 3°0 wt% of one or more of Ti, Zr, Be, Ag, Pb, B, and lanthanoid elements
The purpose of adding is to improve the strength, but 0.0
If it is less than 0.01 wt%, there will be no effect, and if it exceeds 3.0 wt%, the conductivity and workability will deteriorate. Combine to form oxides.

いわゆる介在物となって鋼中に存在するようになるが、
O含有量が0.0020重量%を超えると介在物が多数
生成され、折り曲げ性、半田付は性、めっき性、エツチ
ング性が著しく低下するためである。
They become so-called inclusions that exist in steel,
This is because if the O content exceeds 0.0020% by weight, a large number of inclusions will be formed, and the bendability, soldering properties, plating properties, and etching properties will be significantly reduced.

〔効 果〕〔effect〕

この様に本発明合金はCu−Ni−8i系合金にBを添
加し、耐熱性を向上させ、さらに不純物としての0を限
定することにより、今まで本合金の欠点であった折り曲
げ性、半田付は性、めっき性、エツチング性が著しく改
善することができる。
In this way, the present alloy improves heat resistance by adding B to the Cu-Ni-8i alloy, and by limiting 0 as an impurity, it improves bendability and solderability, which have been the drawbacks of this alloy until now. The adhesion properties, plating properties, and etching properties can be significantly improved.

又、熱膨張係数はプラスチックに近く、半導体機器のリ
ード材としてはプラスチックパッケージ用に適している
。従って1本発明合金は半導体機器のリード材及び導電
性ばね材として好適な材料であり、先行技術の合金にお
いてこのような総合的特性を兼備するものではない。
In addition, its coefficient of thermal expansion is close to that of plastic, making it suitable for plastic packages as a lead material for semiconductor devices. Therefore, the alloy of the present invention is a suitable material for lead materials and conductive spring materials for semiconductor devices, and none of the prior art alloys has such comprehensive properties.

以下に本発明材料を実施例をもって説明する。The material of the present invention will be explained below with reference to Examples.

〔実施例〕〔Example〕

第1表に示される本発明合金に係る各種成分組成のイン
ゴットを電気銅あるいは無a索銅を原料として、高周波
溶解炉で大気、不活性又は還元性雰囲気中で溶解鋳造し
た。電気銅を使用する場合は、還元性雰囲気中で溶解し
酸素含有量を低下させることが推奨される。
Ingots having various compositions of the alloys of the present invention shown in Table 1 were melted and cast using electrolytic copper or non-wire copper as raw materials in a high-frequency melting furnace in air, an inert atmosphere, or a reducing atmosphere. If electrolytic copper is used, it is recommended to dissolve it in a reducing atmosphere to reduce the oxygen content.

次に、これを900℃で熱間圧延して厚さ4mmの板と
した後、900℃×5分の溶体化処理を行い、固剤を行
って冷間圧延で厚さ0.3nnとした。
Next, this was hot rolled at 900°C to form a plate with a thickness of 4 mm, and then solution treatment was performed at 900°C for 5 minutes, solidified, and cold rolled to a thickness of 0.3 nn. .

これを400℃にて2時間時効熱処理し、供試材とした
。リード材及びばね材としての評価項目として5強度、
伸びを引張試験により評価し、ばね性をKb値により評
価した6電気伝導性(放熱性)は導電率(%IAC8)
によって示した。1・1熱性は5分間焼鈍した場合、焼
鈍前の硬さの80%となる温度(軟化温度)で示した。
This was subjected to aging heat treatment at 400° C. for 2 hours to obtain a test material. 5 strength as evaluation items for lead material and spring material,
Elongation was evaluated by a tensile test, and springiness was evaluated by Kb value. 6 Electrical conductivity (heat dissipation) is electrical conductivity (%IAC8)
It was shown by 1.1 Thermal properties are shown as the temperature at which the hardness becomes 80% of the hardness before annealing (softening temperature) when annealed for 5 minutes.

折り曲げ性は曲げR0. 3rraの折り曲げ治具を用
い、90°往復曲げを行い、破断までの回数をill’
l定した。
The bendability is bending R0. Using a 3rra bending jig, perform 90° reciprocating bending and calculate the number of times until breakage.
I decided.

半田付は性は、垂直式浸漬法で230±5℃の半田浴(
すず60%、鉛40%)に5秒間浸漬し、半田のぬれの
状態を目視観察することにより評価した。めっき密着性
は試料に厚さ3μのAgめっきを施し、450℃にて5
分間加熱し1表面に発生するフクレの有無を目視iaす
ることにより評価した。これらの結果を比較合金ととも
に第1表に示した。
Soldering is done using the vertical immersion method in a solder bath at 230±5℃ (
The solder was immersed in a solution (60% tin, 40% lead) for 5 seconds, and the wetting state of the solder was visually observed. Plating adhesion was determined by applying Ag plating with a thickness of 3μ to the sample and testing it at 450°C for 50 minutes.
The sample was heated for 1 minute and evaluated visually for the presence or absence of blisters generated on the surface. These results are shown in Table 1 along with comparative alloys.

この表から1本発明の合金は、高強度、高専電性に合わ
せて、耐熱性を向上させ、半田付は性、めっき性、エツ
チング性、折り曲げ性をも改良し、高力高導電銅合金と
して優れた特性を有することが明らかである。
From this table, the alloy of the present invention is a high-strength, high-conductivity copper alloy that has improved heat resistance, improved soldering properties, plating properties, etching properties, and bending properties in addition to high strength and electrical properties. It is clear that it has excellent properties as

Claims (4)

【特許請求の範囲】[Claims] (1)Ni0.4〜4.0wt%、Si0.1〜1.0
wt%、B0.001〜0.1wt%を含み、残部Cu
及び不可避的不純物からなる耐熱性を向上させた高力高
導電銅合金。
(1) Ni0.4-4.0wt%, Si0.1-1.0
wt%, B0.001 to 0.1 wt%, the balance Cu
A high-strength, high-conductivity copper alloy with improved heat resistance and unavoidable impurities.
(2)Ni0.4〜4.0wt%、Si0.1〜1.0
wt%、B0.001〜0.1wt%を含み、さらに副
成分として、Zn、P、Sn、As、Cr、Mg、Mn
、Sb、Fe、Co、Al、Ti、Zr、Be、Ag、
Pb、ランタノイド元素からなる1種又は2種以上を総
量で、0.001〜3.0wt%含み、残部Cu及び不
可避的不純物からなる耐熱性を向上させた高力高導電銅
合金。
(2) Ni0.4-4.0wt%, Si0.1-1.0
wt%, B0.001 to 0.1 wt%, and further contains Zn, P, Sn, As, Cr, Mg, Mn as subcomponents.
, Sb, Fe, Co, Al, Ti, Zr, Be, Ag,
A high-strength, high-conductivity copper alloy with improved heat resistance, containing one or more of Pb and lanthanide elements in a total amount of 0.001 to 3.0 wt%, and the balance being Cu and unavoidable impurities.
(3)Ni0.4〜4.0wt%、Si0.1〜1.0
wt%、B0.001〜0.1wt%を含み、残部Cu
及び不可避的不純物からなり、該不純物のうち、Oの含
有量が0.0020wt%以下であることを特徴とする
、耐熱性を向上させた高力高導電銅合金。
(3) Ni0.4-4.0wt%, Si0.1-1.0
wt%, B0.001 to 0.1 wt%, the balance Cu
A high-strength, high-conductivity copper alloy with improved heat resistance, characterized in that the content of O among the impurities is 0.0020 wt% or less.
(4)Ni0.4〜4.0wt%、Si0.1〜1.0
wt%、B0.001〜0.1wt%を含み、さらに副
成分として、 Zn、P、Sn、As、Cr、Mg、M
n、Sb、Fe、Co、Al、Ti、Zr、Be、Ag
、Pb、ランタノイド元素からなる1種又は2種以上を
総量で、0.001〜3.0wt%含み、残部Cu及び
不可避的不純物からなり、該不純物のうち、Oの含有量
が0.0020以下であること、を特徴とする、耐熱性
を向上させた高力高導電銅合金。
(4) Ni0.4-4.0wt%, Si0.1-1.0
wt%, B0.001 to 0.1 wt%, and further contains Zn, P, Sn, As, Cr, Mg, M as subcomponents.
n, Sb, Fe, Co, Al, Ti, Zr, Be, Ag
, Pb, and lanthanide elements in a total amount of 0.001 to 3.0 wt%, and the remainder consists of Cu and unavoidable impurities, and the content of O among the impurities is 0.0020 or less A high-strength, high-conductivity copper alloy with improved heat resistance.
JP29661486A 1986-12-15 1986-12-15 High strength copper alloy having high electrical conductivity and improved heat resistance Pending JPS63149345A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29661486A JPS63149345A (en) 1986-12-15 1986-12-15 High strength copper alloy having high electrical conductivity and improved heat resistance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29661486A JPS63149345A (en) 1986-12-15 1986-12-15 High strength copper alloy having high electrical conductivity and improved heat resistance

Publications (1)

Publication Number Publication Date
JPS63149345A true JPS63149345A (en) 1988-06-22

Family

ID=17835831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29661486A Pending JPS63149345A (en) 1986-12-15 1986-12-15 High strength copper alloy having high electrical conductivity and improved heat resistance

Country Status (1)

Country Link
JP (1) JPS63149345A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0368734A (en) * 1989-08-07 1991-03-25 Yazaki Corp High-strength copper alloy for conductive use with excellent bending resistance
JPH0397818A (en) * 1989-09-11 1991-04-23 Kobe Steel Ltd Electrode material for resistance welding
JPH03115538A (en) * 1989-09-29 1991-05-16 Tsuneaki Mikawa Oxide dispersion strengthened special copper alloy
JPH03162539A (en) * 1989-11-20 1991-07-12 Yazaki Corp High-strength copper alloy for conductive use with excellent bending resistance
EP0660444A1 (en) * 1993-12-22 1995-06-28 CMC Carl Maier + Cie AG Low voltage distributor
WO2005083137A1 (en) * 2004-02-27 2005-09-09 The Furukawa Electric Co., Ltd. Copper alloy
JP2007209524A (en) * 2006-02-09 2007-08-23 Koito Ind Ltd Vehicle seat
JP2007270171A (en) * 2006-03-30 2007-10-18 Dowa Holdings Co Ltd High-conductivity copper-based alloy with excellent bendability, and its manufacturing method
JP2012001784A (en) * 2010-06-18 2012-01-05 Hitachi Cable Ltd Rolled copper foil
CN105562636A (en) * 2015-12-31 2016-05-11 张颖 Preparation method for crystallizer copper plate coated with nickel-cobalt-iron alloy layer

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0368734A (en) * 1989-08-07 1991-03-25 Yazaki Corp High-strength copper alloy for conductive use with excellent bending resistance
JPH0527699B2 (en) * 1989-08-07 1993-04-22 Yazaki Corp
JPH0397818A (en) * 1989-09-11 1991-04-23 Kobe Steel Ltd Electrode material for resistance welding
JPH0530894B2 (en) * 1989-09-29 1993-05-11 Tsuneaki Mikawa
JPH03115538A (en) * 1989-09-29 1991-05-16 Tsuneaki Mikawa Oxide dispersion strengthened special copper alloy
JPH03162539A (en) * 1989-11-20 1991-07-12 Yazaki Corp High-strength copper alloy for conductive use with excellent bending resistance
JPH0530896B2 (en) * 1989-11-20 1993-05-11 Yazaki Corp
EP0660444A1 (en) * 1993-12-22 1995-06-28 CMC Carl Maier + Cie AG Low voltage distributor
WO2005083137A1 (en) * 2004-02-27 2005-09-09 The Furukawa Electric Co., Ltd. Copper alloy
US8951371B2 (en) 2004-02-27 2015-02-10 The Furukawa Electric Co., Ltd. Copper alloy
JP2007209524A (en) * 2006-02-09 2007-08-23 Koito Ind Ltd Vehicle seat
JP2007270171A (en) * 2006-03-30 2007-10-18 Dowa Holdings Co Ltd High-conductivity copper-based alloy with excellent bendability, and its manufacturing method
JP2012001784A (en) * 2010-06-18 2012-01-05 Hitachi Cable Ltd Rolled copper foil
US8293033B2 (en) 2010-06-18 2012-10-23 Hitachi Cable, Ltd. Rolled copper foil
CN105562636A (en) * 2015-12-31 2016-05-11 张颖 Preparation method for crystallizer copper plate coated with nickel-cobalt-iron alloy layer

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