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JPS63131104U - - Google Patents

Info

Publication number
JPS63131104U
JPS63131104U JP2332587U JP2332587U JPS63131104U JP S63131104 U JPS63131104 U JP S63131104U JP 2332587 U JP2332587 U JP 2332587U JP 2332587 U JP2332587 U JP 2332587U JP S63131104 U JPS63131104 U JP S63131104U
Authority
JP
Japan
Prior art keywords
current
limiting
terminal
utility
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2332587U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2332587U priority Critical patent/JPS63131104U/ja
Publication of JPS63131104U publication Critical patent/JPS63131104U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Thermistors And Varistors (AREA)
  • Insulated Conductors (AREA)
JP2332587U 1987-02-18 1987-02-18 Pending JPS63131104U (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2332587U JPS63131104U (fr) 1987-02-18 1987-02-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2332587U JPS63131104U (fr) 1987-02-18 1987-02-18

Publications (1)

Publication Number Publication Date
JPS63131104U true JPS63131104U (fr) 1988-08-26

Family

ID=30821529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2332587U Pending JPS63131104U (fr) 1987-02-18 1987-02-18

Country Status (1)

Country Link
JP (1) JPS63131104U (fr)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7005717B2 (en) 2000-05-31 2006-02-28 Freescale Semiconductor, Inc. Semiconductor device and method
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US7045815B2 (en) 2001-04-02 2006-05-16 Freescale Semiconductor, Inc. Semiconductor structure exhibiting reduced leakage current and method of fabricating same
US7067856B2 (en) 2000-02-10 2006-06-27 Freescale Semiconductor, Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US7105866B2 (en) 2000-07-24 2006-09-12 Freescale Semiconductor, Inc. Heterojunction tunneling diodes and process for fabricating same
US7161227B2 (en) 2001-08-14 2007-01-09 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US7211852B2 (en) 2001-01-19 2007-05-01 Freescale Semiconductor, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US7342276B2 (en) 2001-10-17 2008-03-11 Freescale Semiconductor, Inc. Method and apparatus utilizing monocrystalline insulator

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067856B2 (en) 2000-02-10 2006-06-27 Freescale Semiconductor, Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US7005717B2 (en) 2000-05-31 2006-02-28 Freescale Semiconductor, Inc. Semiconductor device and method
US7105866B2 (en) 2000-07-24 2006-09-12 Freescale Semiconductor, Inc. Heterojunction tunneling diodes and process for fabricating same
US7211852B2 (en) 2001-01-19 2007-05-01 Freescale Semiconductor, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US7045815B2 (en) 2001-04-02 2006-05-16 Freescale Semiconductor, Inc. Semiconductor structure exhibiting reduced leakage current and method of fabricating same
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US7161227B2 (en) 2001-08-14 2007-01-09 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US7342276B2 (en) 2001-10-17 2008-03-11 Freescale Semiconductor, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same

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