JPS6283466A - Heat conductor for ion treating apparatus - Google Patents
Heat conductor for ion treating apparatusInfo
- Publication number
- JPS6283466A JPS6283466A JP22258985A JP22258985A JPS6283466A JP S6283466 A JPS6283466 A JP S6283466A JP 22258985 A JP22258985 A JP 22258985A JP 22258985 A JP22258985 A JP 22258985A JP S6283466 A JPS6283466 A JP S6283466A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- silicone rubber
- support
- heat conductor
- thermal conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 title abstract description 6
- 229920002379 silicone rubber Polymers 0.000 claims abstract description 26
- 239000004945 silicone rubber Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000013077 target material Substances 0.000 claims abstract description 6
- 239000002470 thermal conductor Substances 0.000 claims description 22
- 239000012530 fluid Substances 0.000 claims description 11
- 238000001816 cooling Methods 0.000 abstract description 5
- 239000004519 grease Substances 0.000 abstract description 4
- 229920001296 polysiloxane Polymers 0.000 abstract description 3
- 230000009969 flowable effect Effects 0.000 abstract 3
- 238000007789 sealing Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 41
- 238000005468 ion implantation Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002572 peristaltic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000010512 thermal transition Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、イオン注入装置、イオン注入と真空蒸着と
を併用するイオン蒸着薄膜形成装置、イオンビームエツ
チング装置等のイオン処理装置に用いられて、ウェハ等
のターゲット材料とその支持体との間の熱伝導を図る熱
伝導体に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is applicable to ion processing devices such as ion implantation devices, ion vapor deposition thin film forming devices that use both ion implantation and vacuum evaporation, and ion beam etching devices. , relates to a thermal conductor that conducts heat between a target material such as a wafer and its support.
イオン注入装置等において、真空中でウェハにイオンビ
ー１１を照射すると、当該ウェハは非常に高温度になる
。例えば２００ＫＶ、１ｍＡのイオン注入装置において
は、ウェハに注入されるエネルギーは２００ （ＫＶ）
ｘｉ （ｍＡ） −２００〔Ｗ〕にもなり、また雰囲
気が真空であるため、当該ウェハの温度は数百℃まで１
−饗して輻射による放熱と釣り合うようになる。In an ion implanter or the like, when a wafer is irradiated with the ion beam 11 in a vacuum, the temperature of the wafer becomes extremely high. For example, in a 200KV, 1mA ion implanter, the energy injected into the wafer is 200KV.
xi (mA) -200 [W], and since the atmosphere is a vacuum, the temperature of the wafer can vary up to several hundred degrees Celsius.
- It balances out the heat dissipation by radiation.
そこでこれを防止するため、従来から例えば第４図に示
すようなウェハホルダ２が用いられている。このウェハ
ホルダ２は、例えば生産用クイブのイオン注入装置に用
いられるものであり、−）二面中央部がやや凸面をした
（図には表れていない）支持体（冷却プラテンあるいは
冷却用バンキングプレートとも呼ぶ）４の上面にシリコ
ーンゴムから成る熱伝導体８を設置し、その十にウェハ
（例えばシリコンウェハ）１２をうエバ押え１０によっ
て押さえ付ける構造をしており、当該熱伝導体８によっ
てうエバ１２の熱を支持体４へ伝達して冷却するように
している。尚、６は冷却水等の冷却媒体を通すための通
路であり、１４は前述したイオンビームである。In order to prevent this, a wafer holder 2 as shown in FIG. 4, for example, has conventionally been used. This wafer holder 2 is used, for example, in an ion implantation device for production quibs, and includes a support (also known as a cooling platen or a cooling banking plate) (not shown in the figure) whose center portions on two sides are slightly convex. A thermal conductor 8 made of silicone rubber is installed on the upper surface of the wafer (e.g., a silicon wafer) 4, and a wafer (for example, a silicon wafer) 12 is held down by an evaporator holder 10. 12 is transferred to the support 4 for cooling. Note that 6 is a passage through which a cooling medium such as cooling water passes, and 14 is the aforementioned ion beam.
その場合、熱伝導体８としてシリコーンゴムを用いるの
は、シリコーンゴムは可撓性を有しておリ、ウェハＩ２
を押し付けると当該シリコーンゴムは変形してウェハ１
２および支持体４に密着して接触面積が拡大し、これに
よって熱伝導性が良好になるからである。また支持体４
のに血中央部をやや凸面にしているのは、ウェハ１２の
周囲をウェハ押え１０で押圧した場合、ウェハ１２の中
央部にも荷重がかがりウェハ１２の全体が均一・に冷却
されるようにするためである。In that case, silicone rubber is used as the thermal conductor 8 because silicone rubber has flexibility and the wafer I2
When pressed, the silicone rubber deforms and wafer 1
This is because the contact area is expanded by closely adhering to the substrate 2 and the support 4, thereby improving thermal conductivity. Also, the support 4
However, the reason why the central part of the blood is made slightly convex is that when the periphery of the wafer 12 is pressed with the wafer holder 10, the load is also applied to the central part of the wafer 12, so that the entire wafer 12 can be cooled uniformly. This is to do so.
ところが、熱伝導体８として使用されているシリコーン
ゴムシートは、上記のように可撓性を有しているものの
、ウェハ１２と支持体４との間の間隙の不拘−性乙こ応
して変形する量は必ずしも十分なものではなく、従って
ウェハ１２と支持体４との間の熱転ｉ ｉト（−分では
なかった。これは、シリコーンゴムは弾性変形はするけ
れども晴性変形はゼす、従って間隙の小さい所から大き
い所に流動変形してウェハ１２と支持体４とに完全に密
着するということがないことに大きな原因がある。However, although the silicone rubber sheet used as the thermal conductor 8 has flexibility as described above, it does not limit the gap between the wafer 12 and the support 4. The amount of deformation is not necessarily sufficient, and therefore the thermal transition between the wafer 12 and the support 4 was not -min. Therefore, a major cause is that the wafer 12 and the support body 4 are not completely brought into close contact with each other due to flow deformation from a place where the gap is small to a place where the gap is large.
そのため、前述のような注入条件下におけるウェハ１２
の温度を１００°Ｃ稈度以丁に川１えることは従来は不
可能であった。Therefore, under the implantation conditions described above, the wafer 12
In the past, it was impossible to reduce the temperature of a river to within 100°C.
そこでこの発明は、ウェハ等のターリ−）］材利とその
支持体との間の熱伝導をシリコーンゴムシートよりも向
上さゼることかできる熱伝導体を提イＪ（することをＬ
Ｉ的とする。Therefore, the present invention proposes a thermal conductor that can improve thermal conduction between a material such as a wafer and its support compared to a silicone rubber sheet.
It is considered to be I-like.
この発明の熱伝導体は、内部に流動１ノロＡ １１が密
封され少なくともターゲット＋４籾の当接面がシリコー
ンゴムシー１〜より成ることを特徴とする。The thermal conductor of the present invention is characterized in that the flow 1 Noro A 11 is sealed inside and the contact surface of at least the target + 4 rice grains is made of silicone rubber seams 1 to 4.
シリコーンゴムシートで密封している流動性材料は外力
に応じて流動変形するため、当該熱伝導体はウェハ等の
ターゲット材宇１とその支持体とにほぼ完全に密着する
。従って当該熱伝導体によれば、ウェハ等のターゲノＩ
１１とその支持体との間の熱伝導がシリコーンゴＪ、シ
ートのみの場合に比べて向上する。Since the fluid material sealed with the silicone rubber sheet flows and deforms in response to external force, the thermal conductor is almost completely adhered to the target material 1 such as a wafer and its support. Therefore, according to the thermal conductor, target I such as a wafer, etc.
The heat conduction between the silicone rubber sheet and its support is improved compared to the case of only the silicone rubber sheet.
第１図は、この発明の一実施例に係る熱伝導体を示す概
略断面図である。この実施例に係る熱伝導体１８は、例
えば前述したようなウェハホルダ２の熱伝導体８の代わ
りに用いられるものであって、シリコーンゴムシートを
２重構造として上下のシリコーンゴムシート２０ａ、２
Ｏｂ間に流動性材料２２を密封して成る。FIG. 1 is a schematic sectional view showing a thermal conductor according to an embodiment of the present invention. The thermal conductor 18 according to this embodiment is used instead of the thermal conductor 8 of the wafer holder 2 as described above, for example, and has a double structure of silicone rubber sheets, with upper and lower silicone rubber sheets 20a, 2
A fluid material 22 is sealed between the holes.
シリコーンゴムシート２０ａ、２０ｂは、流動性材料２
２の流動変形をできるだけ妨げないようにするため、厚
さが薄い方が好ましい。The silicone rubber sheets 20a and 20b are made of fluid material 2
In order to prevent the flow deformation of No. 2 from being hindered as much as possible, it is preferable that the thickness be as thin as possible.
シリコーンゴムシート２０ａ、２０ｂの間隔ヲ保持する
ために、両者間にスペーサを配設しても良い。In order to maintain the distance between the silicone rubber sheets 20a and 20b, a spacer may be provided between them.
）ん動性材料２２としては、使用雰囲気の真空度よりも
低い飽和蒸気圧のものが好ましい。そのような流動性＋
４ｆ１２２は、真空中で殆ど蒸発しないからである。例
えば、イオン注入装置においては当該熱伝導体１８は１
０−’〜１０−’Ｔ ｏ ｒ ｒ程度の真空度の雰囲気
において使用されるので、流動性材料２２としては飽和
蒸気圧が１Ｏ−７Ｔｏｒｒ程度以下のものが好ましい。) It is preferable that the peristaltic material 22 has a saturated vapor pressure lower than the degree of vacuum of the atmosphere in which it is used. Such liquidity +
This is because 4f122 hardly evaporates in vacuum. For example, in an ion implantation device, the thermal conductor 18 is 1
Since it is used in an atmosphere with a degree of vacuum of about 0-' to 10-' Torr, the fluid material 22 preferably has a saturated vapor pressure of about 10-7 Torr or less.
また流動性材料２２としては、熱伝導率ができるだけ高
いもの、少なくともシリコーンゴムと同程度のものが好
ましい。Further, as the fluid material 22, it is preferable that the thermal conductivity is as high as possible, at least as high as that of silicone rubber.
上記のような条件に適合する流動性材料２２としては、
例えばシリコーングリス、フッ素系グリス等が挙げられ
る。特にシリコーングリスは、常温以下でも固化せずに
使用でき、洗浄、取扱い等も簡単である。またシリコー
ンゴムシー１−２０２ 。The fluid material 22 that meets the above conditions is as follows:
Examples include silicone grease and fluorine-based grease. In particular, silicone grease can be used without solidifying even at temperatures below room temperature, and is easy to clean and handle. Also silicone rubber seal 1-202.
２０ｂと同系の材料であり、ウェハの一般的なヰ４質で
あるシリコンとも同系であるため、ウェハへの不純物混
入の問題等が少ない。Since it is a material of the same type as 20b and also of silicon, which is a general material of wafers, there are fewer problems such as impurities being mixed into the wafer.
上記のような熱伝導体１８においては、流動性材料２２
は外力に応して流動変形するため、例えば当該熱伝導体
１８を前述したウェハホルダ２に用いた場合、ウェハ１
２と支持体４との間の不均一な間隙を十分に埋めつくし
て両者にほぼ完全に密着する。その結果ウェハ１２から
支持体４への熱伝導が良くなりウェハ１２の冷却能力が
向−卜する。また、当該熱伝導体１８はウェハＩ２や支
持体４に均等に接触するため、熱伝導の均一性も犬幅に
向トする。In the heat conductor 18 as described above, the fluid material 22
Because the thermal conductor 18 flows and deforms in response to external force, for example, when the thermal conductor 18 is used in the wafer holder 2 described above, the wafer 1
The non-uniform gap between the support member 2 and the support member 4 is fully filled and the support member 2 and the support member 4 are almost completely adhered to each other. As a result, heat conduction from the wafer 12 to the support body 4 is improved, and the ability to cool the wafer 12 is improved. Further, since the heat conductor 18 is in even contact with the wafer I2 and the support 4, the uniformity of heat conduction also increases in width.
例えば、上記のようなウェハホルダ２に用いて２ＱＯＫ
Ｖｘ１ｍＡのイオン注入を行うような場合、Ｓ７エハ１
２の温度は約８０℃程度にまで低下−さゼることか可能
となる。その結果、例えばウェハ１２の表面に設けられ
ているレジスト（図示省略）に熱影響のないイオン注入
が可能となる。For example, 2QOK can be used for wafer holder 2 as described above.
When performing ion implantation at Vx1mA, S7 wafer 1
The temperature of No. 2 can be lowered to about 80°C. As a result, ion implantation can be performed without thermal influence on, for example, a resist (not shown) provided on the surface of the wafer 12.
第２図は、他の実施例に係る熱伝導体を示す概略断面図
である。この実施例に係る熱伝導体２８は、連ｉ１孔に
流動性材料２２を充填したポーラスな三次元連続多孔体
３２を内部に有するシリコーンゴムシート３０より成っ
ている。FIG. 2 is a schematic cross-sectional view showing a thermal conductor according to another embodiment. The thermal conductor 28 according to this embodiment is made of a silicone rubber sheet 30 having therein a porous three-dimensional continuous porous body 32 in which the continuous holes i1 are filled with the fluid material 22.
三次元連続多孔体３２ばシリ：１−ンゴムシート３０と
一体形成しても良く、その場合は、形成後、連通孔内の
ガスと流動性材料２２の置換を行う。The three-dimensional continuous porous body 32 may be formed integrally with the silicone rubber sheet 30, and in that case, after formation, the gas in the communicating holes is replaced with the fluid material 22.
第３図は、更に他の実施例に係る熱伝導体を示す概略断
面図である。この実施例に係る熱伝導体３８は、金属板
３２とシリコーンゴムシー１−４０の間に流動性材料２
２を充填している。金属板３２とシリコーンゴムシート
４０とは接着又はＯＵングを介して気密締結する。当該
熱伝導体３８の使用に際しては、シリＪ１−ンゴムシー
ト４０側をターゲット材料の当＋ｉ ｔｌＩｉとする。FIG. 3 is a schematic cross-sectional view showing a thermal conductor according to still another embodiment. The thermal conductor 38 according to this embodiment has a fluid material 2 between the metal plate 32 and the silicone rubber seal 1-40.
2 is filled. The metal plate 32 and the silicone rubber sheet 40 are hermetically connected via adhesive or OU. When using the thermal conductor 38, the silicone rubber sheet 40 side is the target material.
尚、上記のような各熱伝導体は、ｌ−に例示し７たよう
なウェハホルダ２以外のウェハホルダ、あるいはハツチ
式のＡ置におけるディスクとウェハとの間にも用いるこ
とができる。また、ｌ〕記熟熱伝導体、上に例示したよ
うなイオン注入装置に限られることなく、一番初めに例
示した。Ｌ・うなイオン処理装置におしＪるウェハ等の
ターゲット材料の冷却に広く使用することができるのは
勿論である。Incidentally, each of the above-mentioned thermal conductors can be used in a wafer holder other than the wafer holder 2 illustrated in 7, or between the disk and the wafer in the hatch type A position. In addition, the present invention is not limited to the ion implantation device as exemplified above, but is exemplified first. Of course, it can be widely used for cooling target materials such as wafers placed in L. ion processing equipment.
以トのようにこの発明によれば、ウェハ等のターゲソＩ
・材料とその支持体との間の熱伝導がシリコーンゴムシ
ートのみの場合に比べて向−［−すると共に、当該熱伝
導の均一性も向−卜する。As described above, according to the present invention, the target solenoid I for wafers, etc.
- Heat conduction between the material and its support is improved compared to the case of only a silicone rubber sheet, and the uniformity of the heat conduction is also improved.
第１回〜第３図は、それぞれ、この発明の実施例に係る
熱伝導体を示す概略断面図である。第４図は、イオン注
入装置のウェハホルダの一例を示す断面図である。Figures 1 to 3 are schematic cross-sectional views showing thermal conductors according to embodiments of the present invention. FIG. 4 is a sectional view showing an example of a wafer holder of an ion implantation device.
Claims (1)
ト材料の当接面がシリコーンゴムシートより成ることを
特徴とするイオン処理装置用熱伝導体。(1) A thermal conductor for an ion processing device, characterized in that a fluid material is sealed inside and at least the contact surface of the target material is made of a silicone rubber sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22258985A JPS6283466A (en) | 1985-10-05 | 1985-10-05 | Heat conductor for ion treating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22258985A JPS6283466A (en) | 1985-10-05 | 1985-10-05 | Heat conductor for ion treating apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6283466A true JPS6283466A (en) | 1987-04-16 |
Family
ID=16784837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22258985A Pending JPS6283466A (en) | 1985-10-05 | 1985-10-05 | Heat conductor for ion treating apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6283466A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6467908A (en) * | 1987-09-08 | 1989-03-14 | Sumitomo Metal Ind | Plasma processing device |
| US20080302059A1 (en) * | 2007-05-18 | 2008-12-11 | Cabot Corporation | Filling Fenestration Units |
-
1985
- 1985-10-05 JP JP22258985A patent/JPS6283466A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6467908A (en) * | 1987-09-08 | 1989-03-14 | Sumitomo Metal Ind | Plasma processing device |
| JP2625756B2 (en) * | 1987-09-08 | 1997-07-02 | 住友金属工業株式会社 | Plasma process equipment |
| US20080302059A1 (en) * | 2007-05-18 | 2008-12-11 | Cabot Corporation | Filling Fenestration Units |
| US8628834B2 (en) * | 2007-05-18 | 2014-01-14 | Cabot Corporation | Filling fenestration units |
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