JPS6263631A - Cu alloy lead stock for semiconductor device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a Cu alloy lead material used in the manufacture of semiconductor devices such as ICs and LSIs.

[Conventional technology]

In general, Cu alloy lead materials that are used as lead materials for semiconductor devices have the following properties: (1) good press punchability, (2) heat resistance that does not cause thermal distortion or thermal softening during heat bonding or heat diffusion bonding of semiconductor elements; (3) Good heat dissipation and conductivity; (4) Strength and elongation that will not cause damage due to bending or repeated bending when transporting semiconductor devices or incorporating them into commercial equipment. , if we look only at specific fields of use, for the purpose of evaluating strength, tensile strength: 40 to 9 f/m.
2 or more, elongation: 4% or more, conductivity: 60 for the purpose of evaluating heat dissipation and conductivity.
%lAC3 or higher'' 2. For the purpose of evaluating heat resistance, it is necessary to have a softening point of 400℃ or higher, but there are many Cu alloy lead materials that have these characteristics. It has been proposed and put into practical use.

[Problem that the invention seeks to solve]

However, as the degree of integration in semiconductor devices has increased in recent years, Cu alloy lead materials are required to have even higher strength and elongation in addition to having the above characteristics. There is a strong desire to develop a Cu alloy lead material that has properties that can fully meet these demands.

[Means for solving problems]

Therefore, from the above-mentioned viewpoint, the present inventors have developed a Cu alloy lead material that not only has the characteristics required for a Cu alloy lead material for semiconductor devices but also has even higher strength and elongation.
As a result of research to develop an alloy lead material, we found that Cr: 0.05-1% in weight% (hereinafter, ``chi'' indicates weight%).
, Zr: 0.005~0.3%, Li:O,OOl~0.05%, and further contains PSMg, 5j-1AP1, Zns and 1
181 or 2 inserts-1- of vin: 0.00
The lead material is made of 011 alloy, which has a composition of 1 to 03%, with the remainder being CIJ and 01% or less impurities.Tensile strength: 52 kgf/myt2 or more, elongation:
Cu alloy lead material has the following properties: 85 cm or higher, electrical conductivity: 80 cm AC3 or higher, and softening point: 460 °C or higher.Cu alloy lead materials with these characteristics have sufficient performance as lead materials for highly integrated semiconductor devices. We obtained the knowledge that

This invention was made based on the above knowledge, and the reason why the component composition was limited as described above will be explained below.

(a) Cr and Zr These components have the effect of improving strength and heat resistance, but if their content is less than 0.05% of Cr and less than 0.005% of Zr, the desired effect may not be achieved. On the other hand, the content of Cr:
If it exceeds 1% and Zr: 0.3%, nonmetallic inclusions are likely to occur and the plating properties and conductivity will decrease, so the content should be reduced to Cr: 0.05 to 1%. ,
Zr: It was determined to be 0.005 to 0.3 chi.

(b) The Li L1 composition not only has a deoxidizing effect, but also has the effect of making crystal grains finer, thereby further improving strength and elongation, and improving press punching properties.
If the content is less than 0.001%, the desired effect cannot be obtained, while if the content exceeds 0.05%, the conductivity will decrease.
It was set at 5%.

(c) P s Mgs Sl, AI! , Zn, and Mn These components have a deoxidizing effect and also have the effect of improving plating properties, soldering properties, and conductivity, but if their content is less than 0.001%, the above effects will not be achieved. The desired effect could not be obtained, and if the content exceeded 0.3%, the effect would tend to deteriorate, so the content was set at 0.001 to 0.3%.

If the content of unavoidable impurities exceeds 0.1%, there will be a tendency for deterioration in any of the properties required for the lead material mentioned above, so the content should be reduced to 0.
, must be kept below 1 inch.

〔Example〕

Next, the Cu alloy lead material of the present invention will be specifically explained using examples.

Molten Cu alloys having the compositions shown in Table 1 were prepared using an ordinary low-frequency groove induction furnace, and molded into water-cooled molds with a planar shape: , 50 m x 0 x height.

After making an ingot with dimensions of 100 mm, to this ingot,
After facing, hot rolling is started at a predetermined temperature within the range of 800 to 950°C to obtain a hot-rolled plate with a thickness of 11B, and then after water cooling, both the upper and lower sides of the hot-rolled plate are rolled by 0.5 mm. It was shaved to a thickness of 210 mm, then cold rolled and annealed repeatedly under normal conditions to obtain a strip with a thickness of 0.3 mm, and finally rolled at 550 to 600°C. The Cu alloy lead material 1 of the present invention is prepared by performing strain relief annealing at a predetermined temperature within the range.
~18 were produced, respectively.

Next, the resulting Cu alloy lead material 1 of the present invention
-18, tensile strength, elongation, conductivity, and softening point were measured. These results are shown in Table 1.

〔Effect of the invention〕

From the results shown in Table 1, Cu alloy lead materials 1 to 18 of the present invention all have the following: tensile strength of 52-f/ms2 or more, elongation of 8.5% or more, electrical conductivity of 80 tAC3 or more, It shows a softening point of 460°C or higher, and these values indicate that it fully satisfies the characteristics required for lead materials for semiconductor devices, and it is clear that the strength and elongation are even higher. .

As mentioned above, the Cu alloy lead material of the present invention not only has the electrical conductivity and softening point required for normal Cu alloy lead materials for semiconductor devices, but also has even higher strength and elongation. Of course, semiconductor devices,
It exhibits excellent performance as a lead material for highly integrated semiconductor devices.

Claims (1)

[Claims] Contains Cr: 0.05-1%, Zr: 0.005-0.3%, Li: 0.001-0.05%, and further contains P, Mg, Si, Al. , Zn, and Mn: 0.001 to 0.3%, and the remainder is Cu and 0.1% or less of unavoidable impurities (wt%). A Cu alloy lead material for semiconductor devices having high strength and high elongation, characterized by being made of a Cu alloy.