JPS6237383B2 - - Google Patents
Info
- Publication number
- JPS6237383B2 JPS6237383B2 JP1290583A JP1290583A JPS6237383B2 JP S6237383 B2 JPS6237383 B2 JP S6237383B2 JP 1290583 A JP1290583 A JP 1290583A JP 1290583 A JP1290583 A JP 1290583A JP S6237383 B2 JPS6237383 B2 JP S6237383B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- photomask blank
- selenium
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001020 plasma etching Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000011669 selenium Substances 0.000 claims description 12
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 11
- 229910052711 selenium Inorganic materials 0.000 claims description 11
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229910052702 rhenium Inorganic materials 0.000 claims description 6
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 6
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 5
- 229910052720 vanadium Inorganic materials 0.000 claims 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- DFPDUAIKYSCDBA-UHFFFAOYSA-N [Cr].[Pb]=O Chemical class [Cr].[Pb]=O DFPDUAIKYSCDBA-UHFFFAOYSA-N 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 239000011133 lead Substances 0.000 claims 2
- 239000010408 film Substances 0.000 description 34
- 239000007789 gas Substances 0.000 description 12
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 6
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 5
- 229910000423 chromium oxide Inorganic materials 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 3
- 241000894007 species Species 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910018162 SeO2 Inorganic materials 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- MOUPNEIJQCETIW-UHFFFAOYSA-N lead chromate Chemical compound [Pb+2].[O-][Cr]([O-])(=O)=O MOUPNEIJQCETIW-UHFFFAOYSA-N 0.000 description 1
- XMFOQHDPRMAJNU-UHFFFAOYSA-N lead(ii,iv) oxide Chemical compound O1[Pb]O[Pb]11O[Pb]O1 XMFOQHDPRMAJNU-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- YSZJKUDBYALHQE-UHFFFAOYSA-N rhenium trioxide Chemical compound O=[Re](=O)=O YSZJKUDBYALHQE-UHFFFAOYSA-N 0.000 description 1
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】
本発明はフオトマスクブランクに関し、より詳
しくはプラズマエツチング用のフオトマスクブラ
ンクに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to photomask blanks, and more particularly to photomask blanks for plasma etching.
従来、この種のフオトマスクブランクとして
は、ガラス基板上にタンタル薄膜（膜厚：約1000
Å）を形成し、そのタンタル薄膜上にフオトレジ
スト（膜厚：約5000Å）を塗布したものが知られ
ている。このブランクは、露光、現像及びエツチ
ングを行い、タンタル薄膜上に所定のレジストパ
ターンを形成した後、平行平板型又は円筒型のプ
ラズマエツチング装置の槽内に挿入し、チヤンバ
ー内を一度真空にして、CF4ガスを導入する。そ
して、ラジオ波（通常13.56MHz）をかけること
により、プラズマを発生させて、露光された部分
のタンタル薄膜がエツチングされて、レジストパ
ターン部分のタンタル薄膜を残し、所定の遮光性
パターンを形成したフオトマスクを得ていた。 Conventionally, this type of photomask blank was made using a tantalum thin film (thickness: approx. 1000 mm) on a glass substrate.
It is known that a photoresist (thickness: about 5000 Å) is formed on the tantalum thin film. This blank is exposed, developed, and etched to form a predetermined resist pattern on the tantalum thin film, and then inserted into a tank of a parallel plate type or cylindrical plasma etching device, and the chamber is once evacuated. Introduce CF4 gas. Then, by applying radio waves (usually 13.56MHz), plasma is generated, and the tantalum thin film in the exposed area is etched, leaving the tantalum thin film in the resist pattern area, forming a photomask with a predetermined light-shielding pattern. I was getting .
しかしながら、このフオトマスクは、微細パタ
ーンの静電破壊を起こしたり、あるいは被転写物
との間で多重反射を起こして、パターン精度を低
下させる欠点があつた。それがため、微細加工性
及び制御性等に優れたプラズマエツチングが紹介
されていながら、プラズマエツチング用のフオト
マスクブランクが末開発であつた。 However, this photomask has the drawback of causing electrostatic damage to the fine pattern or causing multiple reflections with the object to be transferred, reducing pattern accuracy. For this reason, although plasma etching, which has excellent microprocessability and controllability, has been introduced, photomask blanks for plasma etching have not yet been developed.
本発明の目的は、上記した欠点を除去し、微細
パターンの静電破壊を防止し、被転写物との間で
の多重反射を防止した、弗素系ガスを用いた反応
性イオンエツチング等のプラズマエツチング用フ
オトマスクブランクを提供することである。 The purpose of the present invention is to eliminate the above-mentioned drawbacks, prevent electrostatic damage to fine patterns, and prevent multiple reflections from being transferred to an object using plasma such as reactive ion etching using fluorine-based gas. An object of the present invention is to provide a photomask blank for etching.
このような目的を達成させるため、本発明は、
弗素系ガスのプラズマ種に対して耐性のある透明
導電膜と、同プラズマ種に対してエツチングされ
やすい遮光性金属膜及び反射防止膜を見い出し、
これらの膜をガラス基板上に成膜することにより
構成されている。 In order to achieve such an objective, the present invention
We discovered a transparent conductive film that is resistant to fluorine-based gas plasma species, and a light-shielding metal film and antireflection film that are easily etched by the same plasma species.
It is constructed by forming these films on a glass substrate.
以下、本発明を実施例図面を参照して説明す
る。 Hereinafter, the present invention will be explained with reference to embodiment drawings.
第１図に示すように、透明なアルミノボロシリ
ケートガラス基板（(株)保谷硝子製：LE−30）等
から製作されたガラス基板１上に、酸化クロム
（Cr2O3）粉末を抵抗加熱式O2ガス反応性真空蒸着
法により酸化クロム膜の透明導電膜（膜厚：約
300Å）２を成膜し、その上にセレン（Se）をタ
ーゲツトとしてスパツタリング法によりセレン膜
の遮光性金属膜（膜厚：約1000Å）３を成膜し、
更にその上に酸化ゲルマニウム（GeO2）粉末を抵
抗加熱式O2ガス反応性真空蒸着法により酸化ゲ
ルマニウム膜の反射防止膜（膜厚：約900Å）４
を成膜してフオトマスクブランクを製作した。 As shown in Figure 1, chromium oxide (Cr 2 O 3 ) powder is resistance heated on a glass substrate 1 made of a transparent aluminoborosilicate glass substrate (LE-30 manufactured by Hoya Glass Co., Ltd.). Transparent conductive film of chromium oxide film (film thickness: approx.
A light-shielding metal film (thickness: about 1000 Å) 3 of selenium film was formed on top of it by sputtering using selenium (Se) as a target.
Furthermore, germanium oxide (GeO 2 ) powder is coated on top of the antireflection film (thickness: approx. 900 Å) using a resistance heating O 2 gas reactive vacuum deposition method.
A photomask blank was produced by forming a film.
このフオトマスクブランクの分光反射率は、波
長430nｍの光に対して10％であつた。 The spectral reflectance of this photomask blank was 10% for light with a wavelength of 430 nm.
このフオトマスクブランクは、第２図に示すよ
うに、先ずフオトレジスト（膜厚：約5000Å）５
を塗布し、（同図ａ）、露光、現像を行つて、１μ
ｍ程度のレジストパターン５１を作成し（同図
ｂ）、これをCF4ガスを用いて反応性イオンエツ
チングを行うことにより、レジストパターン５１
のない部分の露出された酸化ゲルマニウム膜４と
セレン膜３をエツチングして反射防止パターン４
１と遮光性パターン３１を形成した（同図ｃ）。
ここで、酸化クロム膜２の存在を確認するため
に、O2プラズマ中で、レジストパターン５１を
灰化し、再びCF4ガスを用いて反応性イオンエツ
チングを行うことにより、反射防止パターン４１
と遮光性パターン３１を全てエツチングした（同
図ｄ）。このときの酸化クロム膜２のシート抵抗
を測定した結果、200KΩ／□程度の導電性を確
保していることが判明した。 As shown in FIG.
(a), exposed and developed to 1μ
By creating a resist pattern 51 of about m (FIG. b) and performing reactive ion etching using CF 4 gas, the resist pattern 51 is etched.
The exposed germanium oxide film 4 and selenium film 3 are etched to form an anti-reflection pattern 4.
1 and a light-shielding pattern 31 were formed (c in the same figure).
Here, in order to confirm the presence of the chromium oxide film 2, the resist pattern 51 is ashed in O 2 plasma, and reactive ion etching is performed again using CF 4 gas to remove the antireflection pattern 41.
The light-shielding pattern 31 was completely etched (d in the same figure). As a result of measuring the sheet resistance of the chromium oxide film 2 at this time, it was found that conductivity of about 200KΩ/□ was secured.
以上のように、本発明によれば、弗素系ガスの
プラズマ種に対してエツチングされやすい遮光性
金属及び反射防止膜用酸化物をマスク材として、
エツチングされにくい酸化物を透明導電膜として
それぞれ使用することにより、弗素系ガスによる
プラズマエツチングによつて製作されるフオトマ
スクについて帯電防止効果及び反射防止効果を得
ることができる。 As described above, according to the present invention, a light-shielding metal and an oxide for an antireflection film that are easily etched by fluorine-based gas plasma species are used as a mask material.
By using oxides that are difficult to etch as transparent conductive films, antistatic effects and antireflection effects can be obtained for photomasks manufactured by plasma etching using fluorine gas.
上記実施例では、透明導電膜と遮光性金属膜と
反射防止膜の３層膜を形成したが、そのうち透明
導電膜と遮光性金属膜から成る２層のものは静電
破壊防止のフオトマスクブランクとして使用する
ことができ、また、遮光性金属膜と反射防止膜か
ら成る２層のものは反射防止のフオトマスクブラ
ンクとして使用することができる。 In the above example, a three-layer film consisting of a transparent conductive film, a light-shielding metal film, and an anti-reflection film was formed, but the two-layer film consisting of a transparent conductive film and a light-shielding metal film was used as a photomask blank to prevent electrostatic damage. In addition, a two-layered photomask blank consisting of a light-shielding metal film and an antireflection film can be used as an antireflection photomask blank.
また、他の実施例としては、本発明に係る透明
導電膜として酸化クロムの他に酸化鉄
（Fe3O4）、酸化鉛（Pb3O4）及びクロム酸鉛
（PbCrO4）等を使用することができ、遮光性金属
膜としてセレンの他にゲルマニウム（Ge）、レニ
ウム（Re）、バナジウム（Ｖ）及びルテニウム
（Ru）を使用することができ、反射防止膜として
酸化ゲルマニウムの他に二酸化セレン（SeO2）、
酸化レニウム（ReO3）、酸化イリジウム（IrO2）
及び五酸化バナジウム（V2O5）等を使用すること
ができ、弗素系ガスとしてCF4の他にC2、F6、
C3F8、CHF3、SiF4等及びそれらの混合ガス又は
前記弗素系ガスに酸素ガスを混合したものを使用
することができる。更に、以上の透明導電膜と反
射防止膜は、所定の膜厚をもつて１層で形成され
るが、列挙された各酸化物を多層形成してもよ
い。 In addition, as another example, in addition to chromium oxide, iron oxide (Fe 3 O 4 ), lead oxide (Pb 3 O 4 ), lead chromate (PbCrO 4 ), etc. are used as the transparent conductive film according to the present invention. Germanium (Ge), rhenium (Re), vanadium (V), and ruthenium (Ru) can be used in addition to selenium as a light-shielding metal film, and germanium dioxide in addition to germanium oxide can be used as an antireflection film. Selenium ( SeO2 ),
Rhenium oxide (ReO 3 ), iridium oxide (IrO 2 )
and vanadium pentoxide (V 2 O 5 ), etc. In addition to CF 4 , C 2 , F 6 ,
C 3 F 8 , CHF 3 , SiF 4 , etc., a mixed gas thereof, or a mixture of the fluorine-based gas and oxygen gas can be used. Furthermore, although the transparent conductive film and antireflection film described above are formed in one layer with a predetermined thickness, they may be formed in multiple layers of each of the listed oxides.
以上の通り、本発明によれば、弗素系ガスによ
るプラズマエツチング用のフオトマスクブランク
を実現したことにより、その実用的な価値は多大
である。 As described above, according to the present invention, a photomask blank for plasma etching using fluorine-based gas has been realized, which has great practical value.
第１図は本発明による実施例を示すフオトマス
クブランクの概略断面図、第２図は前実施例のフ
オトマスクブランクを使用した弗素系ガスによる
プラズマエツチングによつて製作したフオトマス
クの概略断面図である。
１……ガラス基板、２……酸化クロムの透明導
電膜、３……セレンの遮光性金属膜、４……酸化
ゲルマニウムの反射防止膜。
Fig. 1 is a schematic sectional view of a photomask blank showing an embodiment of the present invention, and Fig. 2 is a schematic sectional view of a photomask manufactured by plasma etching with fluorine gas using the photomask blank of the previous embodiment. be. 1... Glass substrate, 2... Transparent conductive film of chromium oxide, 3... Light-shielding metal film of selenium, 4... Anti-reflection film of germanium oxide.
Claims (1)
フオトマスクブランクにおいて、ガラス基板上に
セレン、ゲルマニウム、レニウム、イリジウム、
バナジウム及びルテニウムのうち何れか１つを遮
光性金属膜として成膜し、かつ前記遮光性金属膜
上にセレン、ゲルマニウム、レニウム、イリジウ
ム及びバナジウムの各酸化物のうち少くとも１層
を反射防止膜として成膜したことを特徴とするフ
オトマスクブランク。 ２ 弗素系ガスを用いたプラズマエツチング用の
フオトマスクブランクにおいて、ガラス基板上に
鉄、クロム、鉛及びクロム鉛の各酸化物のうち少
くとも１層を透明導電膜として成膜し、かつ前記
透明導電膜上にセレン、ゲルマニウム、レニウ
ム、イリジウム、バナジウム及びルテニウムのう
ち何れか１つを遮光性金属膜として成膜したこと
を特徴とするフオトマスクブランク。 ３ 弗素系ガスを用いたプラズマエツチング用の
フオトマスクブランクにおいて、ガラス基板上に
鉄、クロム、鉛及びクロム鉛の各酸化物のうち少
くとも１層を透明導電膜として成膜し、かつ前記
透明導電膜上にセレン、ゲルマニウム、レニウ
ム、イリジウム、バナジウム及びルテニウムのう
ち何れか１つを遮光性金属膜として成膜し、かつ
前記遮光性金属膜上にセレン、ゲルマニウム、レ
ニウム、イリジウム及びバナジウムの各酸化物の
うち少くとも１層を反射防止膜として成膜したこ
とを特徴とするフオトマスクブランク。[Claims] 1. In a photomask blank for plasma etching using fluorine-based gas, selenium, germanium, rhenium, iridium,
Either one of vanadium and ruthenium is formed as a light-shielding metal film, and at least one layer of oxides of selenium, germanium, rhenium, iridium, and vanadium is formed on the light-shielding metal film as an antireflection film. A photomask blank characterized by having been deposited as a film. 2. In a photomask blank for plasma etching using fluorine-based gas, at least one layer of iron, chromium, lead, and chromium-lead oxides is formed as a transparent conductive film on a glass substrate, and A photomask blank characterized in that a light-shielding metal film made of one of selenium, germanium, rhenium, iridium, vanadium, and ruthenium is formed on a conductive film. 3. In a photomask blank for plasma etching using fluorine-based gas, at least one layer of each of iron, chromium, lead, and chromium-lead oxides is formed as a transparent conductive film on a glass substrate, and the transparent Any one of selenium, germanium, rhenium, iridium, vanadium, and ruthenium is formed as a light-shielding metal film on the conductive film, and each of selenium, germanium, rhenium, iridium, and vanadium is formed on the light-shielding metal film. A photomask blank characterized in that at least one layer of oxide is formed as an antireflection film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58012905A JPS59139034A (en) | 1983-01-31 | 1983-01-31 | Photomask blank |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58012905A JPS59139034A (en) | 1983-01-31 | 1983-01-31 | Photomask blank |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59139034A JPS59139034A (en) | 1984-08-09 |
| JPS6237383B2 true JPS6237383B2 (en) | 1987-08-12 |
Family
ID=11818374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58012905A Granted JPS59139034A (en) | 1983-01-31 | 1983-01-31 | Photomask blank |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59139034A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60132323A (en) * | 1983-12-21 | 1985-07-15 | Hitachi Ltd | Mask for x-ray exposure |
| KR101029162B1 (en) * | 2003-02-03 | 2011-04-12 | 호야 가부시키가이샤 | Pattern transfer method using photomask blanks, photomasks and photomasks |
| JP2006078825A (en) | 2004-09-10 | 2006-03-23 | Shin Etsu Chem Co Ltd | Photomask blank, photomask and method for manufacturing same |
-
1983
- 1983-01-31 JP JP58012905A patent/JPS59139034A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59139034A (en) | 1984-08-09 |
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