JPS62296449A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor device having high water vapor proof reliability, a high electric characteristic and high heatproof reliability, and moreover having small internal stress, and having extremely high reliability by a method wherein the device is sealed with a specified epoxy resin composite. CONSTITUTION:A semiconductor element is sealed using an epoxy resin composite containing novolak type epoxy resin A, novolak type phenol resin B, a filler C and an organosilicon polymer D, and moreover containing at least one side of the components of a bisphenol A type or a bisphenol F type compound E to be expressed by the expression (1) and a bisphenol A type or a bisphenol F type compound F to be expressed by the expression (2). At the expressions (1), (2), X indicates a p-phenylene radical, R1 is CH3, CF3, CCl3, CBr3, CI3 or H, (n) is an integer of 1-10, and R2 is CH3, CF3, CCl3, CBr3, CI3 or H. The component E and the component F have action to dissolve fragility according to the increase in quantity of the filler of sealing resin, and load thereof is so set as to make the sum total (E+F) of both the components to become to be 1-50% in relation to the sum total of (the component A+the component B).

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a highly reliable semiconductor device.

[Conventional technology]

Semiconductor elements such as transistors, ICs, and LSIs are usually sealed with ceramic packages, plastic packages, or the like to form semiconductor devices. The above-mentioned ceramic package has high heat resistance as a constituent material itself, excellent moisture permeability, and high mechanical strength. Moreover, since it is a hollow package, highly reliable sealing is possible. However, recently, resin sealing using plastic packages has become mainstream because the constituent materials are relatively expensive and the mass productivity is poor. For this type of resin sealing, an epoxy resin composition has been used that uses a novolac type epoxy resin as a main ingredient and a novolac type phenol resin as a curing agent.

[Problem that the invention seeks to solve]

However, due to technological innovation in the semiconductor field, the degree of integration has increased, element sizes have become larger, and interconnects have become finer, and packages are also becoming smaller and thinner. Greater reliability (internal stress of semiconductor devices obtained).

There is a demand for improvement in moisture resistance reliability, shock resistance reliability, heat resistance reliability, etc.).

In order to meet the above-mentioned demands, particularly the demand for reducing internal stress, the epoxy resin used for sealing is modified with a rubber component or a silicone compound to lower the elastic modulus of the sealing resin. According to this method, the internal stress of the sealing resin can be effectively reduced, but as the elastic modulus decreases, the strength of the sealing resin decreases, and when the molded body is taken out of the mold, the gate does not fit. The parts that correspond to the runners and the parts that correspond to the runners are prone to breakage, which poses a problem in that it hinders molding operations. In addition, there was also the drawback that cracks appeared in the molded product when the molded product was bent with pins or cut with tie bars.

The problem of the strength reduction of the sealing resin can be improved to some extent by increasing the amount of filler in the epoxy resin composition. However, although it is possible to increase the strength of the sealing resin by reducing internal stress by increasing the amount of filler in this way, it causes the problem that the sealing resin itself loses its stickiness and becomes brittle. .

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor device that has low internal stress, high strength, and is not brittle and is sealed with a resin.

[Means for solving problems]

In order to achieve the above object, the semiconductor device of the present invention includes:
A configuration is adopted in which a semiconductor element is sealed using an epoxy resin composition containing the following components (A) to (D) and at least one of components (E) and (F).

(A) Novolac type epoxy resin.

(B) Novolac type phenolic resin.

(C) Filler.

(D) Organosilicone polymer.

(E) Bisphenol A represented by the following general formula (1)
type or bisphenol F type compound.

(Margin) (F) Bisphenol A represented by the following general formula (2)
type or bisphenol F type compound.

The epoxy resin composition used in this invention comprises a novolac type epoxy resin (component A), a novolac type phenol resin (component B), a filler (component C), an organosilicone polymer (component D), and bisphenol A. type compound (
E, F components) and bisphenol F type compounds (E, F components)
It is obtained by using at least one of the ingredients (components), and is usually in powder form or tablet form.

The epoxy resin serving as the above A component is not particularly limited, but usually has an epoxy resin of 1) 60 to 250 and a softening point of 5.
A temperature of 0 to 130°C is used. Particularly preferred are those having an epoxy equivalent of 170 to 230 and a softening point of 60 to 1)0°C.

The novolak type phenol resin as component B used together with the above epoxy resin acts as a curing agent for the above epoxy resin, and among them, the novolac type phenol resin has a softening point of 50 to 130.
℃ and a hydroxyl equivalent of 80 to 180 is preferable.

Filler (C
Component) is fused or crystalline silica powder or a mixture thereof, and as mentioned above, increasing the amount of this used prevents a decrease in strength due to the use of component D, which will be described later. The blending amount of this filler is preferably set to 60 to 90% by weight (hereinafter abbreviated as "%") of the entire epoxy resin composition. More preferred is 68-85
%, and the most preferred range is 72-80%. In other words, if the amount of the filler is below the above range, the effect of improving the strength of the sealing resin will be reduced, and conversely, if it exceeds the above range, the strength of the sealing resin will also decrease. .

The organosilicone polymer used together with the above components A to C exhibits the effect of reducing the internal stress of the sealing resin, and is usually represented by the following general formula (3).

The organosilicone polymer as described above is usually used as the component A, component B, and component E (or component F or E).
It is preferable to mix 1 to 50% of the total amount of +F component). More preferred is 3-40%, most preferred is 5-30%. That is, if the blending amount is less than the above range, a sufficient stress reduction effect cannot be obtained, whereas if it exceeds the above range, a significant decrease in resin strength will be observed.

In addition, the bisphenol A type compound used with the above components A to D is usually bisphenol A type or bisphenol F represented by the following -S formula (4).
type compounds are used.

(R=CH1 or 1, n is an integer of 1 to 10) is used.

Such bisphenol A type or bisphenol F type compounds, alone or in combination, exhibit the effect of eliminating the brittleness caused by an increase in the amount of filler in the sealing resin.

In addition, the following general formulas (5) and (6) (m
can also be used.

These compounds represented by (5) or 6) all belong to bisphenol A type compounds, and are used alone or in combination with other bisphenol A type or bisphenol F type compounds. In particular, the above general formula (6)
In addition to the effect of eliminating the brittleness described above, the compound represented by formula (5) also exhibits the effect of reducing the water absorption rate of the sealing resin. In addition to the effect of eliminating flame retardancy, it also exhibits the effect of imparting flame retardancy.

As mentioned above, the C component and the C component have the effect of eliminating the sophistication caused by the increase in the amount of filler in the sealing resin, and the blending amount thereof is the sum of both components (E +
F) is 1 to 50% of the total amount of the A component and C component.
It is preferable to set it so that More preferred is 5 to 30%. That is, if the blending amount is less than the above range, the effect of eliminating brittleness will be reduced, whereas if it exceeds the above range, the glass transition temperature (Tg) of the sealing resin will be significantly lowered.

In addition, in addition to the above-mentioned components A to C, a curing accelerator, a mold release agent, etc. can be used in the epoxy resin composition used in the present invention, if necessary.

As the curing accelerator, any substance that can act as a catalyst during the curing reaction of the phenol-curing epoxy resin can be used. Examples include 2,4.6-tri(dimethylaminomethyl)phenol and 2-methylimidazole.

As the above-mentioned mold release agent, conventionally known long-chain carboxylic acids such as stearic acid and valmitic acid, metal salts of long-chain carboxylic acids such as zinc stearate and calcium stearate, and waxes such as carnauba wax and montan wax are used. It can be used as appropriate. It goes without saying that the compounds exemplified as the curing accelerator and female molding agent can be used alone or in combination.

The epoxy resin composition used in this invention can be produced, for example, as follows. That is, a novolac type epoxy resin (component A).

A novolak type phenol resin (component C), a filler (component C), an organosilicone polymer (component D), at least one of component C and component C, and if necessary, a curing accelerator, a mold release agent, etc., as appropriate. Blend. Next, the desired epoxy resin composition can be manufactured by mixing and kneading the above-mentioned mixture by a tri-blend method or a melt-blend method.

The encapsulation of a semiconductor element using such an epoxy resin composition is not particularly limited, and can be performed by a known molding method such as ordinary transfer molding. In this case, since the above composition contains a small amount (both of the C component and the C component), the sealing resin is sticky and has high strength. In addition, the sealing resin is sticky and strong as mentioned above, so cracks are less likely to occur when bending the resulting molded product or cutting tie bars.The sealing resin itself does not contain the above ingredients. By containing , a decrease in glass transition temperature (Tg) and other properties are not observed, and therefore, highly reliable sealing can be realized.

The semiconductor device obtained in this way has excellent low stress properties because the encapsulating resin contains an organosilicone polymer, which is a low stress component, and also has high strength because it contains a filler. Furthermore, due to the C component and the low C component, the sealing resin is not brittle and has excellent properties.

[Effects of the Invention] The semiconductor device of the present invention comprises an organosiloxane polymer (
Contains component D), as well as bisphenol A.
type compound (C component) and bisphenol F type compound (
Since it is sealed with a special epoxy resin composition that contains at least one of component C), it has high moisture resistance, electrical properties, and heat resistance reliability (and has low internal stress and extremely high reliability. In particular, the above-mentioned special epoxy resin composition can be used to seal very large scale integrated circuits (VLSI), etc.
! This is a major feature, as it enables the above-mentioned high reliability to be obtained in a special semiconductor element with a wiring width of 2 μm or less.

Next, examples will be described.

[Examples 1 to 21] First, bisphenol A-type compounds, bisphenol F-type compounds, and organosilicone polymers as shown in Table 1 were prepared.

(Left below) Next, mix the above raw materials and the raw materials shown in Table 2 below into a second
The mixture was blended in the proportions shown in the table, melted and kneaded for 1° using a mixing roll machine (roll salt ff1oO"c), cooled to solidify and pulverized to obtain the desired powdered epoxy resin composition. Ta.

(Left below) (Comparative Examples 1 to 4) The raw materials shown in Table 3 below were blended in the proportions shown in the same table, and this was mixed using a mixing roll machine (roll temperature 10
(0°C) for 10 minutes, the resulting sheet-like composition was cooled and solidified, and then pulverized to obtain a powdered epoxy resin composition.

*L*2: A semiconductor device was obtained by molding a semiconductor element by transfer molding using the powdered epoxy resin compositions obtained in the above Examples and Comparative Examples as shown in Table 2. The semiconductor device obtained in this way is kept at room temperature or at 1
Bending test at 70°C, glass transition temperature, 1000 hour faith track test in a pressure cooker under pressure (hereinafter abbreviated as rPCBT test) and -50°C
A temperature cycle test (hereinafter abbreviated as "rTCT test") of 15 minutes at 150 degrees Celsius to 15 minutes at 150 degrees Celsius was conducted.

The results are shown in Table 4.

(Left below) From Table 4, it can be seen that the PCBT of the implemented product is lower than that of the comparative product.
It can be seen that it shows high bending strength at room temperature and high temperature while maintaining moisture resistance in the test. Also,
The fact that cracks are less likely to occur in the TCT test indicates that it has excellent low stress properties and crack resistance. That is, the epoxy resin composition used in this invention has high resin strength at room temperature or high temperature (170°C),
In addition, it has excellent crack resistance, so there is no risk of gate breakage or runner breakage of the sealing resin during transfer molding.It is also easy to work with, and does not cause cracks when folding pins or cutting tie bars. It can be seen that a package with excellent moisture resistance can be formed. Therefore, a semiconductor device obtained using such an epoxy resin composition has extremely low stress properties, excellent moisture resistance, and heat resistance. It has great strength.

Claims (1)

[Claims] (1) Contains the following components (A) to (D), and (E)
and (F) A semiconductor device formed by sealing a semiconductor element using an epoxy resin composition containing at least one of the components. (A) Novolac type epoxy resin. (B) Novolac type phenolic resin. (C) Filler. (D) Organosilicone polymer. (E) Bisphenol A represented by the following general formula (1)
type or bisphenol F type compound. ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(1) [In the above formula, X is a substituted or unsubstituted p-phenylene group, R_1 is CH_2, CF_3, CCl_3, C
Br_3, Cl_3 or H, n is an integer from 1 to 10. ] (F) Bisphenol A represented by the following general formula (2)
type or bisphenol F type compound. ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(2) [In the above formula, X is a substituted or unsubstituted p-phenylene group, R_2 is CH_3, CF_3, CCl_3, C
Br_3, Cl_3 or H, n is an integer from 1 to 10. ]