JPS62291201A - Microwave integrated circuit - Google Patents
Microwave integrated circuitInfo
- Publication number
- JPS62291201A JPS62291201A JP61135494A JP13549486A JPS62291201A JP S62291201 A JPS62291201 A JP S62291201A JP 61135494 A JP61135494 A JP 61135494A JP 13549486 A JP13549486 A JP 13549486A JP S62291201 A JPS62291201 A JP S62291201A
- Authority
- JP
- Japan
- Prior art keywords
- output line
- dielectric substrate
- microstrip
- pass filter
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Waveguide Connection Structure (AREA)
- Waveguides (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
く技術分野〉
本発明は、マイクロ波通信機器等に使用されるマイクロ
ストリップ線路で形成された帯域濾波器を有するマイク
ロ波集積回路（以下、ＭＩＣという）に関するものであ
る。Detailed Description of the Invention 3. Technical Field of the Invention The present invention relates to a microwave integrated circuit (hereinafter referred to as MIC).
〈従来の技術〉
マイクロ波通信機器においては、その回路の構成要素と
してマイクロストリップ線路を用いたＭＩＣが一般に使
用される。<Prior Art> In microwave communication equipment, an MIC using a microstrip line is generally used as a component of the circuit.
従来、この種のＭＩＣ内に帯域側限を目的とする帯域濾
波器が必要となる場合、一般的６二はマイクロストリッ
プ線路を用いたマイクロストリップ線路型の帯域濾波器
が回路構成の容易さなどから使用されている。′この場
合、帯域濾波器の回路パターン面とＭＩＣ内の他の回路
パターン面とは、ＭＩＣを構成する誘電体基板の同一面
上に配置され且つ相互に接続されている。Conventionally, when a bandpass filter for the purpose of band-side limiting is required in this type of MIC, a microstrip line type bandpass filter using a microstrip line is generally used due to ease of circuit configuration, etc. It has been used since. 'In this case, the circuit pattern surface of the bandpass filter and the other circuit pattern surface within the MIC are arranged on the same surface of the dielectric substrate constituting the MIC and are connected to each other.
第３図はこの従来のＭＩＣの平面構成を示す。FIG. 3 shows the planar configuration of this conventional MIC.
裏面に接地導体面（図示せず）を有する誘電体基板２４
上にトランジスタ素子２５からなる増幅回路部２１．マ
イクロストリップ線路で構成された帯域濾波器２２並び
に出力線路部２３から構成されており、これらの回路が
シールドを目的とする筐体２６に収容されている。帯域
濾波器２２は、１／２波長分布結合型渡波器が用いられ
る。入力端子２７から入ってきた信号は、増幅回路部２
１で増幅された後、帯域濾波器２２において帯域制限さ
れ、出力線路部２３を通って出力端子２８より出力され
る。Dielectric substrate 24 having a ground conductor surface (not shown) on the back surface
Above is an amplifier circuit section 21 consisting of a transistor element 25. It is composed of a bandpass filter 22 and an output line section 23 made up of microstrip lines, and these circuits are housed in a casing 26 for the purpose of shielding. As the bandpass filter 22, a 1/2 wavelength distribution coupling type wave filter is used. The signal coming from the input terminal 27 is sent to the amplifier circuit section 2.
1, the signal is band-limited in a bandpass filter 22, passes through an output line section 23, and is outputted from an output terminal 28.
〈発明が解決しようとする問題点〉
上述のマイクロストリップ線路型帯域濾波器を有するＭ
ＩＧにおいては、以下のような問題点がある。<Problems to be solved by the invention> M having the above-mentioned microstrip line type bandpass filter
IG has the following problems.
つまり、帯域濾波器２２を形成する１／２波長分布結合
型濾波器は分布結合型であることから、１／２波長共振
器２９と入力結合共振器３０及び出力結合共振器３１と
はある結合間隔を有して配置されており、この結合間隔
を信号が電磁界結合し、入力部から出力部へと信号伝達
されていく。In other words, since the 1/2 wavelength distribution coupling filter forming the bandpass filter 22 is of the distribution coupling type, there is a certain coupling between the 1/2 wavelength resonator 29, the input coupling resonator 30, and the output coupling resonator 31. The signals are electromagnetically coupled through this coupling interval and transmitted from the input section to the output section.
この場合、各共振器間での信号結合時に結合損失が存在
し、この結合損失に相当する信号底−分の大部分は帯域
濾波器２２の空間に輻射される。そして、この輻射電力
は、筐体２６内を伝搬し、他の増幅回路部２１や出力線
路部２３と結合する。In this case, a coupling loss exists during signal coupling between each resonator, and most of the signal bottom portion corresponding to this coupling loss is radiated into the space of the bandpass filter 22. Then, this radiated power propagates within the casing 26 and is coupled to the other amplifier circuit section 21 and the output line section 23.
輻射電力が増幅回路部２１と結合した場合、信号は帰還
状態となり、この帰還状態が発振を引き起こす正帰還位
相となり、かつ発振電力利得条件を満足する場合などに
は、増幅回路部２１は発振状態となりうる。特に増幅回
路部２１の増幅利得が高利得の場合には、その危険性が
増大する。また、輻射電力が出力線路部２３と結合した
場合、帯域濾波器２２のもつ選択度特性の劣化をまねく
。When the radiated power is coupled with the amplifier circuit section 21, the signal enters the feedback state, and this feedback state becomes a positive feedback phase that causes oscillation, and when the oscillation power gain condition is satisfied, the amplifier circuit section 21 enters the oscillation state. It can be. In particular, when the amplification gain of the amplifier circuit section 21 is high, the risk increases. Further, when the radiated power is coupled to the output line section 23, the selectivity characteristics of the bandpass filter 22 are deteriorated.
従来ではこの問題を解決するために、例えば帯域濾波器
をシールドケースで覆って輻射を防いだり、帯域濾波器
と増幅回路部及び出力線路部との間にシールド板を設置
し筐体を分断することにより輻射電力を遮蔽するなどの
方法が用いられている。しかしながら、このような方法
では、シールドケースなどの遮蔽するための部品が必要
である上、十分な遮蔽効果をもたず、また組立工程が必
要であるなど、多くの欠点があった。Conventionally, in order to solve this problem, for example, the bandpass filter was covered with a shield case to prevent radiation, or a shield plate was installed between the bandpass filter and the amplifier circuit section and the output line section to separate the casing. Methods such as shielding radiated power are used. However, this method has many drawbacks, such as requiring a shielding component such as a shield case, not having a sufficient shielding effect, and requiring an assembly process.
〈発明の目的〉
本発明は上記事情に鑑みてなされたものであり、マイク
ロストリップ線路型帯域濾波器からの輻射電力を簡単な
構成で遮蔽できるようにしたＭＩＣの提供を目的とする
。<Objective of the Invention> The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a MIC capable of shielding radiated power from a microstrip line type bandpass filter with a simple configuration.
〈発明の構成〉
本発明に係るＭＩＣは、誘電体基板の片面にマイクロス
トリップ入出力線路とマイクロストリップ線路濾波回路
の接地導体面とを有し、誘電体基板の他の面にマイクロ
ストリップ入出力線路の接地導体面とマイクロストリッ
プ線路濾波回路とを有する。これにより、マイクロスト
リップ線路濾波回路から輻射された輻射電力がＭＩＣを
収容した筺体内を伝搬してマイクロストリップ入出力線
路と結合することを防止する。<Configuration of the Invention> The MIC according to the present invention has a microstrip input/output line and a ground conductor surface of a microstrip line filter circuit on one side of a dielectric substrate, and a microstrip input/output line on the other side of the dielectric substrate. It has a line ground conductor plane and a microstrip line filter circuit. This prevents the radiated power radiated from the microstrip line filter circuit from propagating within the casing housing the MIC and coupling with the microstrip input/output line.
〈実施例〉
第１図（ａ）は本実施例のＭＩＣの表面の構造を示し、
同図（ｂｌはＭＩＣの裏面の構造を示す。<Example> Figure 1(a) shows the structure of the surface of the MIC of this example,
In the same figure (bl shows the structure of the back side of the MIC.
誘電体基板１０の表面には、マイクロストリップ線路で
構成された増幅回路部ｌと出力線路部３の回路パターン
並びに帯域濾波器２の接地導体面４を有する。誘電体基
板１０の裏面は、マイクロストリップ線路で構成された
１／２波長分布結合型帯域濾波器２の回路パターンと増
幅回路部ｌの接地導体面５及び出力線路部３の接地導体
面６を有する。誘電体基板１０の表面の増幅回路部１と
裏面の帯域濾波器２とは、誘電体基板１０を介してスル
ーホール７により接続されている。誘電体基板１０の表
面の出力線路部３と裏面の帯域濾波３２とは、誘電体基
板ＩＯを介してスルーホール８により接続されている。The surface of the dielectric substrate 10 has a circuit pattern of an amplifier circuit section 1 and an output line section 3 formed of microstrip lines, as well as a ground conductor surface 4 of a bandpass filter 2. The back surface of the dielectric substrate 10 has a circuit pattern of a 1/2 wavelength distributed coupling type bandpass filter 2 composed of a microstrip line, a ground conductor surface 5 of the amplifier circuit section l, and a ground conductor surface 6 of the output line section 3. have The amplifier circuit section 1 on the front surface of the dielectric substrate 10 and the bandpass filter 2 on the back surface are connected via the dielectric substrate 10 through a through hole 7. The output line section 3 on the front surface of the dielectric substrate 10 and the bandpass filter 32 on the back surface are connected by a through hole 8 via the dielectric substrate IO.
帯域濾波器２の接地導体面４は、アース用スルーホール
９により他の接地導体面５，６と接続されており、共通
接地がとられている。The grounding conductor surface 4 of the bandpass filter 2 is connected to other grounding conductor surfaces 5 and 6 through a grounding through hole 9, so that a common grounding is established.
増幅回路部１は、トランジスタ素子１１と周辺の回路パ
ターン１２とから構成される。帯域濾波２３２は、入力
結合共振器１３．１／２波長共振器１４、出力結合共振
器１５により構成される。入力端子１６は、増幅回路部
１に接続される。出力端子１７は、出力線路部３に接続
される。The amplifier circuit section 1 is composed of a transistor element 11 and a peripheral circuit pattern 12. The bandpass filter 232 includes an input coupling resonator 13, a 1/2 wavelength resonator 14, and an output coupling resonator 15. Input terminal 16 is connected to amplifier circuit section 1 . The output terminal 17 is connected to the output line section 3.
入力端子１６から入ってきた信号は、誘電体基板１０の
表裏面に形成された回路パターン及び接地導体面からな
るマイクロストリップ線路を伝搬し、増幅され且つ帯域
制限されて出力端子１７から出ていく。A signal coming in from the input terminal 16 propagates through a microstrip line consisting of a circuit pattern and a ground conductor surface formed on the front and back surfaces of the dielectric substrate 10, is amplified and band-limited, and exits from the output terminal 17. .
本実施例のＭＩＣにおいては、電気力線の輻射を有する
帯域濾波器２がＭＩＣを構成する他の増幅回路部１や出
力線路部３と誘電体基板１０の相異なる面に形成されて
いるため、帯域濾波器２からの輻射電力が増幅回路部１
や出力線路部３と結合するのを防ぐことができる。従っ
て、従来の帯域濾波器を有するＭＩＣの欠点であった発
振現象や帯域濾波器の選択度特性の劣化をなくすること
ができる。In the MIC of this embodiment, the bandpass filter 2 having the radiation of electric lines of force is formed on a different surface of the dielectric substrate 10 from the other amplifier circuit section 1 and output line section 3 constituting the MIC. , the radiated power from the bandpass filter 2 is transmitted to the amplifier circuit section 1.
This can prevent coupling with the output line section 3 and the output line section 3. Therefore, it is possible to eliminate the oscillation phenomenon and the deterioration of the selectivity characteristics of the bandpass filter, which are disadvantages of conventional MICs having a bandpass filter.
第２図はＭＩＣを形成した誘電体基板１０を筐体１８に
収容した状態の断面構造を示す。帯域濾波器２の回路パ
ターンが誘電体基板１０の裏面に形成されているので、
筺体１８は帯域濾波器２に対向する部分が短絡接地しな
いように凹部１８ａが設けられている。この筐体１８の
凹形加工により、帯域濾波器２は凹部１８ａの金属壁及
び誘電体基板１０によって囲まれ、隙間のないシールド
構造が得られる結果、帯域濾波器２が他の回路と遮蔽さ
れ、帯域波波器２からの輻射電力がＭＩＣの他の回路と
結合することがなくなる。FIG. 2 shows a cross-sectional structure of the dielectric substrate 10 on which the MIC is formed and housed in the casing 18. Since the circuit pattern of the bandpass filter 2 is formed on the back surface of the dielectric substrate 10,
The housing 18 is provided with a recess 18a so that the portion facing the bandpass filter 2 is not short-circuited and grounded. Due to the concave processing of the housing 18, the bandpass filter 2 is surrounded by the metal wall of the recess 18a and the dielectric substrate 10, and a shield structure with no gaps is obtained, so that the bandpass filter 2 is shielded from other circuits. , the radiated power from the band wave transducer 2 will not be coupled with other circuits of the MIC.
なお、上述の実施例では１／２波長分布結合型帯域濾波
器を用いたが、本発明は輻射を有するあらゆる帯域濾波
器を用いても同様の効果を得ることができる。In addition, although the 1/2 wavelength distribution coupling type bandpass filter was used in the above-mentioned embodiment, the present invention can obtain the same effect even if any bandpass filter having radiation is used.
〈発明の効果〉
以上説明したように本発明においては、帯域濾波器と入
出力線路とを誘電体基板の相異なる面に配置するという
簡単な構成で帯域濾波器から輻射する輻射電力が入出力
線路と結合することを防止でき、コストアンプを生じる
ことなく発振現象や帯域濾波器の選択度特性の劣化をな
くすことができるというすぐれた効果を有する。<Effects of the Invention> As explained above, in the present invention, the radiated power radiated from the bandpass filter can be input/output with a simple configuration in which the bandpass filter and the input/output line are arranged on different surfaces of the dielectric substrate. It has the excellent effect of being able to prevent coupling with the line and eliminating oscillation phenomena and deterioration of the selectivity characteristics of the bandpass filter without producing a cost amplifier.
第１図は本発明実施例のＭＩＣの表面と裏面の構造を示
す図、
第２図は本発明実施例のＭＩＣを筐体に収容した状態の
断面構造を示す図、
第３図は従来例のＭＩＣの構造を示す図である。
■−増幅回路部
２−・帯域濾波器
３−・−出力線路部
４．５．６−・接地導体面
７．８．９・−スルーホール
１０−誘電体基板Fig. 1 is a diagram showing the structure of the front and back surfaces of the MIC according to the embodiment of the present invention, Fig. 2 is a diagram showing the cross-sectional structure of the MIC according to the embodiment of the present invention housed in a case, and Fig. 3 is a conventional example. It is a figure showing the structure of MIC of. ■-Amplifier circuit section 2--Band filter 3--Output line section 4.5.6--Ground conductor surface 7.8.9--Through hole 10-Dielectric substrate
Claims (2)
及びマイクロストリップ出力線路とマイクロストリップ
線路濾波回路の接地導体面とを有し、上記誘電体基板の
他の面に上記マイクロストリップ入力線路と上記マイク
ロストリップ出力線路との接地導体面と上記マイクロス
トリップ線路濾波回路とを有するマイクロ波集積回路。(1) One side of the dielectric substrate has a microstrip input line, a microstrip output line, and a ground conductor surface of a microstrip filter circuit, and the other side of the dielectric substrate has the microstrip input line and the microstrip line filter circuit. A microwave integrated circuit having a ground conductor plane with a strip output line and the microstrip line filter circuit.
ストリップ線路濾波回路の一端とを上記誘電体基板を通
してスルーホール等により高周波的に接続し、上記マイ
クロストリップ出力線路と上記マイクロストリップ線路
濾波回路の他端とを上記誘電体基板を通してスルーホー
ル等により高周波的に接続し、上記誘電体基板の表裏面
の上記接地導体面をスルーホール等により電気的に接続
してなる特許請求の範囲第１項記載のマイクロ波集積回
路。(2) The microstrip input line and one end of the microstrip line filtering circuit are connected at high frequency by a through hole or the like through the dielectric substrate, and the microstrip output line and the other end of the microstrip line filtering circuit are is electrically connected to the ground conductor surfaces on the front and back surfaces of the dielectric substrate by through holes or the like. wave integrated circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61135494A JPS62291201A (en) | 1986-06-11 | 1986-06-11 | Microwave integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61135494A JPS62291201A (en) | 1986-06-11 | 1986-06-11 | Microwave integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62291201A true JPS62291201A (en) | 1987-12-18 |
Family
ID=15153049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61135494A Pending JPS62291201A (en) | 1986-06-11 | 1986-06-11 | Microwave integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62291201A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0260301U (en) * | 1988-10-26 | 1990-05-02 | ||
| JPH02246146A (en) * | 1989-03-20 | 1990-10-01 | Matsushita Electron Corp | Microwave integrated circuit |
| JPH0746007A (en) * | 1993-07-28 | 1995-02-14 | Matsushita Electric Ind Co Ltd | Substrate for electric power and electric power amplifier for high frequency |
| JP2001053508A (en) * | 1999-08-17 | 2001-02-23 | Hitachi Kokusai Electric Inc | Mounting structure of high frequency circuit components |
-
1986
- 1986-06-11 JP JP61135494A patent/JPS62291201A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0260301U (en) * | 1988-10-26 | 1990-05-02 | ||
| JPH02246146A (en) * | 1989-03-20 | 1990-10-01 | Matsushita Electron Corp | Microwave integrated circuit |
| JPH0746007A (en) * | 1993-07-28 | 1995-02-14 | Matsushita Electric Ind Co Ltd | Substrate for electric power and electric power amplifier for high frequency |
| JP2001053508A (en) * | 1999-08-17 | 2001-02-23 | Hitachi Kokusai Electric Inc | Mounting structure of high frequency circuit components |
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