JPS62285976A - Abrasive composition - Google Patents
Abrasive compositionInfo
- Publication number
- JPS62285976A JPS62285976A JP61128319A JP12831986A JPS62285976A JP S62285976 A JPS62285976 A JP S62285976A JP 61128319 A JP61128319 A JP 61128319A JP 12831986 A JP12831986 A JP 12831986A JP S62285976 A JPS62285976 A JP S62285976A
- Authority
- JP
- Japan
- Prior art keywords
- silicic anhydride
- abrasive
- alumina
- polishing
- silanol group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 81
- 125000005372 silanol group Chemical group 0.000 claims description 36
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 32
- 239000003125 aqueous solvent Substances 0.000 claims description 16
- 238000005498 polishing Methods 0.000 description 29
- 239000002245 particle Substances 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 239000002002 slurry Substances 0.000 description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 15
- 239000006185 dispersion Substances 0.000 description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 229910052799 carbon Inorganic materials 0.000 description 12
- 239000007788 liquid Substances 0.000 description 12
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 10
- 239000007822 coupling agent Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000006061 abrasive grain Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 229910002012 Aerosil® Inorganic materials 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 238000004062 sedimentation Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 125000000962 organic group Chemical group 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 239000003082 abrasive agent Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000002612 dispersion medium Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- -1 silicon halide Chemical class 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000000571 coke Substances 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 150000002012 dioxanes Chemical class 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical group OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 241000283986 Lepus Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- IKHGUXGNUITLKF-XPULMUKRSA-N acetaldehyde Chemical compound [14CH]([14CH3])=O IKHGUXGNUITLKF-XPULMUKRSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 229940096529 carboxypolymethylene Drugs 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000001246 colloidal dispersion Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000010303 mechanochemical reaction Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000003961 organosilicon compounds Chemical group 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- KHDSWONFYIAAPE-UHFFFAOYSA-N silicon sulfide Chemical compound S=[Si]=S KHDSWONFYIAAPE-UHFFFAOYSA-N 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
3、発明の詳細な説明
〔産業上の利用分野〕
本発明は研摩剤組成物に関する。更に詳しくは、半導体
基板、薄膜磁気ヘッド基板、光ファイバー、レーザーミ
ラー等の光学部品、磁気ディスク基板等の精密研摩に有
用な研摩剤組成物に関する。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an abrasive composition. More specifically, the present invention relates to an abrasive composition useful for precision polishing of semiconductor substrates, thin-film magnetic head substrates, optical components such as optical fibers and laser mirrors, magnetic disk substrates, and the like.
従来、研摩剤としては糧々のものが知られておシ例えば
特公昭53−ご75≦号にはアルミナ等の研摩剤粉末お
よびシリカゾルを水及び/又は水溶性有機溶媒に含ませ
た分散液からなる研摩剤が示されている。しかしながら
、該研摩剤はガラス板等の研摩に適するものの高度な研
摩精度の要求される半導体等の精密研摩には不適である
。Hitherto, a wide variety of abrasives have been known. For example, in Japanese Patent Publication No. 53-75≦, there is a dispersion of abrasive powder such as alumina and silica sol in water and/or a water-soluble organic solvent. An abrasive consisting of: However, although this abrasive is suitable for polishing glass plates and the like, it is not suitable for precision polishing of semiconductors and the like which require a high degree of polishing precision.
一方、近年無水ケイ酸のコロイド状分散液はシリコンウ
ェハーをはじめとする半導体材料の研摩用として需要が
高まっており、表面のわずかな粗度により性能に大きな
劣化をもたらす半導体材料の研摩剤としては研摩性能、
取フ扱い性の優れたものが要求され、この傾向は益々高
まっている。On the other hand, in recent years, colloidal dispersions of silicic anhydride have been in increasing demand for use in polishing semiconductor materials such as silicon wafers, and as abrasives for semiconductor materials where slight surface roughness can cause significant deterioration in performance. polishing performance,
There is a demand for products with excellent handling properties, and this trend is increasing more and more.
一般にシリカ粒子の製造法は湿式法と乾式法の二つに大
別され、得られる粒子の形状は、一般に湿式法の場合は
不定形で角ばった粒子となるのに対して、乾式法のもの
は、丸みヲ膏びた略球形の粒子である。半導体材料の研
摩材の砥粒には両者とも用いられているが、メカノケミ
カル反応を利用した研摩の場合には、その形状が丸みを
帯び要略球形である乾式の無水ケイ酸粒子の方が研摩表
面品位が向上し、好ましいことが知られている(例えば
特公昭j7−20310号参照)。乾式法で製造された
無水ケイ酸はNa等のアルカリ金属を含まず高純度のも
のが得られるため研摩剤の砥粒として特に好ましいもの
である。しかしながら乾式法で製造された無水ケイ酸は
凝集、増粘効果が大きいため、70wt4以上の無水ケ
イ酸濃度ではゲル化して研摩剤として使用出来ない欠点
を有していた。In general, methods for producing silica particles are broadly divided into wet methods and dry methods.The shape of the particles obtained by the wet method is generally irregular and angular, whereas that of the dry method. is a roughly spherical particle with a rounded shape. Both types of abrasive grains are used in abrasive materials for semiconductor materials, but in the case of polishing using mechanochemical reactions, dry silicic anhydride particles, which have a rounded, roughly spherical shape, are more effective in polishing. It is known that the surface quality is improved and is preferable (see, for example, Japanese Patent Publication No. 7-20310). Anhydrous silicic acid produced by a dry method is particularly preferred as abrasive grains for abrasives because it does not contain alkali metals such as Na and can be of high purity. However, since the silicic anhydride produced by the dry method has a large aggregation and thickening effect, it has the disadvantage that it becomes gelatinous at a silicic acid anhydride concentration of 70 wt4 or more and cannot be used as an abrasive.
一方、10wt%以下の低濃度に於いては、シリカの沈
降が起こる。かかる沈降を防止する目的で、例えば特開
昭5弘−/2??90号には水に可溶性のカルボキシポ
リメチレンゴム又はキサンタムゴムを含有させることが
、又同公報には従来、水溶性セルロース誘導体を含有さ
せたことが記されている。しかしながら、かかる水溶性
有機高分子等の沈降防止剤を添加してシリカの沈降を抑
える方法では、沈降防止剤を大量に使用することによっ
て初めて効果を達成することができたシ、あるいは効果
が達成されたとしてもスラリーが粘性となるのに加えて
、本来研摩材としては好ましからざる有機物の混入量が
多くなるという欠点を有していた。On the other hand, at a low concentration of 10 wt% or less, silica sediments. For the purpose of preventing such sedimentation, for example, Japanese Patent Application Laid-Open No. 1983-1985 Hiro-/2? ? No. 90 describes the inclusion of water-soluble carboxypolymethylene rubber or xantham rubber, and the publication also describes the inclusion of water-soluble cellulose derivatives. However, with this method of suppressing silica sedimentation by adding an anti-settling agent such as a water-soluble organic polymer, the effect could only be achieved by using a large amount of the anti-settling agent, or the effect could not be achieved. Even if it were, the slurry would become viscous, and the slurry would be contaminated with a large amount of organic matter, which is not desirable as an abrasive.
本発明は、かかる問題を解決し、高濃度でも粘度が低く
、水溶性有機高分子等の沈降防止剤等を添加しなくても
粒子の沈降がない無水ケイ酸及びアルミナを含有する水
性分散液からなる研摩剤を提供するものである。The present invention solves such problems and provides an aqueous dispersion containing silicic anhydride and alumina, which has a low viscosity even at high concentrations and does not cause particles to settle even without adding an anti-settling agent such as a water-soluble organic polymer. The present invention provides an abrasive consisting of:
本発明の要旨はアルミナ及び乾式法で製造された無水ケ
イ酸を表面処理して得られた、表面シラノール基密度が
/θθP当シ0.3側以上3個以下の範囲の無水ケイ酸
を水性溶媒中に含有することを特徴とする研摩剤組成物
に存する。The gist of the present invention is to use aqueous silicic acid anhydride, which is obtained by surface treating alumina and silicic anhydride produced by a dry method, and has a surface silanol group density in the range of 0.3 to 3 on the /θθP side. An abrasive composition characterized in that it is contained in a solvent.
以下、本発明を更に詳細に説明する。The present invention will be explained in more detail below.
本発明で使用されるシリカは乾式法で製造された無水ケ
イ酸に限られる。前述の如くシリカ粒子の製造法は、湿
式法と乾式法の二つに大別されるが、湿式法で製造され
たシリカ粒子は、含水ケイ酸で、その表面積は乾式法で
製造された同一粒径の無水ケイ酸粒子に比べ大きく、又
吸湿速度も大きいので本発明で使用されるシリカとして
は適さない、ケイ酸の乾式製造法としては四塩化ケイ素
の如きハロゲン化ケイ素を高温バーナー火炎中で加水分
解する方法、四塩化ケイ素・アンモニア・水蒸気の気相
反応による方法、テトラメトキシシランの如き有機ケイ
素化合物の熱分解による方法、ケイ素微粉の燃焼、硫化
ケイ素の燃焼、天然の無水ケイ酸含有物とコークス混合
物をアーク加熱し、再酸化する方法など種々挙げられる
が、本発明で使用される無水ケイ酸は、特にその製法に
よって限定されるものではない。しかしながら、ハロゲ
ン化ケイ素の高温加水分解によシ得られた、ヒλ−ムド
シリカと呼ばれる無水ケイ酸が特に好ましい。The silica used in the present invention is limited to silicic anhydride produced by a dry process. As mentioned above, methods for producing silica particles are broadly divided into wet methods and dry methods. Silica particles produced by the wet method are made of hydrated silicic acid and have the same surface area as those produced by the dry method. The particle size is larger than that of anhydrous silicic acid particles, and the moisture absorption rate is also high, so it is not suitable as the silica used in the present invention.A dry method for producing silicic acid is to heat a silicon halide such as silicon tetrachloride in a high-temperature burner flame. method by gas-phase reaction of silicon tetrachloride, ammonia, and steam, method by thermal decomposition of organosilicon compounds such as tetramethoxysilane, combustion of silicon fine powder, combustion of silicon sulfide, and natural anhydrous silicic acid. Various methods can be used, such as arc heating a mixture of coke and coke to reoxidize, but the silicic anhydride used in the present invention is not particularly limited by its manufacturing method. Particularly preferred, however, is silicic acid anhydride, called ahumed silica, obtained by high-temperature hydrolysis of silicon halides.
本発明で使用される無水ケイ酸は、比表面積が10〜乙
00 rr?/ f、好ましくは/ 00〜j00d/
fであり、粒径Q、θ/μ〜/μ、好ましくは0、O/
〜θI/μ程度である。The silicic anhydride used in the present invention has a specific surface area of 10 to 00 rr? /f, preferably /00~j00d/
f, particle size Q, θ/μ ~ /μ, preferably 0, O/
~ θI/μ.
通常、乾式法で得られ次無水ケイ酸の表面シラノール基
密度は10 o X2肖り3個よυ大であるが、本発明
では、乾式法で得られた無水ケイ酸を表面処理すること
により、その表面シラノール基密度を10 o ’h”
当り0.J @以上3個以下にしておくことが必要であ
る。好ましくはその表面シ・ラノール基密度は100P
当シ0.5以上2.5個以下であυ、更に好ましくは0
.j個以上=個よシ少ない。Normally, the surface silanol group density of hyposilicic anhydride obtained by a dry process is greater than 10 × 3 silanol groups, but in the present invention, by surface-treating the silicic anhydride obtained by a dry process, , its surface silanol group density is 10 o'h”
Hit 0. J It is necessary to keep it at least 3 and no more than 3. Preferably, the surface silanol group density is 100P.
The number is 0.5 or more and 2.5 or less, more preferably 0
.. More than j = fewer than j pieces.
無水ケイ酸の表面処理により表面シラノール基密度を減
少させる方法としては、シラノール基を各種カップリン
グ剤と反応させる方法、シラノール基をアルコールとエ
ステル化反応させる方法、加熱にようシラノール基を脱
水縮合させる方法等が挙げられる。これらのうち、カッ
プリング剤、アルコール等をシラノール基と反応させる
ことによシ有機基を導入してシラノール基の減少を図る
場合には、疎水性が強くなシすぎて、水系溶媒に濡れな
くなつ次カ、均一に分散することが困難になる場合があ
るので、表面シラノール基密度を本発明の範囲内にする
ような範囲で、カップリング剤、アルコール等ノ量をあ
る程度控える等の配慮が必要である。かかる処理の目安
としては、有機元素分析装置により測定した、有機基を
導入した無水ケイ酸中の有機炭素含量によって判断しう
る。Methods for reducing the surface silanol group density by surface treatment of silicic anhydride include reacting the silanol groups with various coupling agents, esterifying the silanol groups with alcohol, and dehydrating and condensing the silanol groups by heating. Examples include methods. Among these, when attempting to reduce the number of silanol groups by introducing an organic group by reacting a coupling agent, alcohol, etc. with the silanol group, the hydrophobicity is too strong and it cannot be wetted by aqueous solvents. Since it may be difficult to disperse uniformly during summer, consideration should be given to reducing the amount of coupling agent, alcohol, etc. to a certain extent while keeping the surface silanol group density within the range of the present invention. is necessary. As a guideline for such treatment, it can be determined based on the organic carbon content in the silicic anhydride into which organic groups have been introduced, as measured by an organic element analyzer.
カップリング剤により無水ケイ酸の表面シラノール基密
度を減少させる場合のカップリング剤としては、メチル
トリメトキシシラン、ヘキサメチルジシラザン等のシラ
ン系カップリング剤、アセトアルコキ7アルミ二つムジ
イソプロビレート等のアルミ系カップリング剤、インプ
ロピルトリイソステアロイルチタネート等の有機チタン
系カンプリング剤、ジブチルコーメタリロイロキシエチ
ルホス7エート等の有機リン系カップリング剤等が挙げ
られる。カップリング剤をシラノール基と反応させるこ
とによシ無水ケイ酸に有機基を導入して、表面シラノー
ル基密度を本発明の範囲にする場合には、該処理後の無
水ケイ酸中の全有機炭素の含有量が3wt%以上では疎
水性が強く、水系溶媒に均一に分散することは困難であ
るので、全有機炭素の含有量が0.7〜!、0vrt%
の範囲とするのが好ましい。カップリング剤による処理
方法は特に限定されるものではなく、通常の液相処理、
気相処理が適用出来る。Coupling agents used to reduce the surface silanol group density of silicic anhydride include silane coupling agents such as methyltrimethoxysilane and hexamethyldisilazane, acetalkoxy7aluminum diisopropylate, etc. Aluminum-based coupling agents, organic titanium-based camping agents such as inpropyl triisostearoyl titanate, organic phosphorus-based coupling agents such as dibutyl cometallyloyloxyethyl phos7ate, and the like. When an organic group is introduced into silicic anhydride by reacting a coupling agent with a silanol group to bring the surface silanol group density within the range of the present invention, the total organic group in silicic anhydride after the treatment is If the carbon content is 3 wt% or more, the hydrophobicity is strong and it is difficult to uniformly disperse it in an aqueous solvent, so the total organic carbon content should be 0.7~! ,0vrt%
It is preferable to set it as the range of. The treatment method using a coupling agent is not particularly limited, and includes ordinary liquid phase treatment,
Gas phase treatment can be applied.
アルコールによフ無水ケイ酸の表面シラノール基密度を
減少させる場合のアル;−ルとしては、メタノール、エ
タノール、n−プロパツール、180−プロパツール、
n−ブタノール、を−ブタノール等の炭素数/〜/?の
直鎖又は分岐鎖の飽和−価アルコールが挙げられる。ア
ルコールとシラノール基のエステル化反応により無水ケ
イ酸に有機基を導入して表面シラノール基密度を本発明
の範囲にする場合には、前述の該シリカ中の全有機炭素
の含有fkをθ、/〜t、o wt%の範囲とするのが
好ましい。d、0wt%を超えるものは疎水性が強く水
系溶媒へは分散し難い。In the case of reducing the surface silanol group density of silicic anhydride with alcohol, examples of the alcohol include methanol, ethanol, n-propanol, 180-propanol,
Number of carbon atoms in n-butanol, -butanol, etc./~/? straight-chain or branched saturated-hydric alcohols. When the surface silanol group density is within the range of the present invention by introducing an organic group into silicic anhydride through an esterification reaction between an alcohol and a silanol group, the above-mentioned total organic carbon content fk in the silica is set to θ, / It is preferable to set it as the range of -t,o wt%. d, those exceeding 0 wt% are strongly hydrophobic and difficult to disperse in aqueous solvents.
処理方法としては気相処理が好ましく温度は処理に用い
るアルコールの沸点以上、350℃以下の温度が好まし
い。The preferred treatment method is gas phase treatment, and the temperature is preferably higher than the boiling point of the alcohol used in the treatment and lower than 350°C.
加熱によりシラノール基を脱水縮合して無水ケイ酸の表
面イラノール基密Ifを減少させる場合には、単に30
θ℃以上、好ましくは500℃以上に加熱すればよい。When reducing the surface ylanol group density If of silicic anhydride by dehydrating and condensing silanol groups by heating, simply 30
It may be heated to θ°C or higher, preferably 500°C or higher.
要するに、処理方法のいかんに、かかわらず、最終的に
無水ケイ酸の表面シラノール基密度が本発明の範囲内と
なれば良い。In short, regardless of the treatment method, it is sufficient that the final surface silanol group density of the silicic anhydride falls within the range of the present invention.
但し、表面シラノール基密度が0,3個/100X2を
越える場合、無水ケイ酸中の全有機炭素含有量が多いも
の程親水性が小さくなり、水系溶媒に分散させた場合、
粘性が小さくなる傾向にあるので、全有機炭素含有量は
、上記範囲内で大きい程粘性が小さく好ましい。However, when the surface silanol group density exceeds 0.3/100X2, the higher the total organic carbon content in the silicic anhydride, the lower the hydrophilicity, and when dispersed in an aqueous solvent,
Since the viscosity tends to decrease, the higher the total organic carbon content within the above range, the lower the viscosity, which is preferable.
表面シラノール基密度が本発明の範囲外の無水ケイ酸を
水系溶媒に分散させた場合には、分散液の高粘性あるい
は、無水ケイ酸の沈降性が認められ好ましくない。特に
、カップリング剤を使用して表面シラノール基密度を減
少させる場合、該密度が(7,J個/10oX!より小
さくなると、粘性や揺変性が発現し好ましくない。この
理由は明らかではないが、非常に高い疎水性にし九ため
、本来の水素結合による作用とは異なった疎水結合的な
力が働いているものと推測される。When silicic anhydride having a surface silanol group density outside the range of the present invention is dispersed in an aqueous solvent, high viscosity of the dispersion or sedimentation of the silicic anhydride is observed, which is not preferable. In particular, when using a coupling agent to reduce the surface silanol group density, if the density becomes less than (7,J pieces/10oX!), viscosity and thixotropy will develop, which is undesirable.The reason for this is not clear, but Because it is extremely hydrophobic, it is presumed that a hydrophobic bonding force is acting, which is different from the original hydrogen bonding force.
かくして得られた無水ケイ酸の表面7ラノール基を測定
するには、その反応性を利用して種種の方法で定量でき
るが、本発明に於てはN2吸着によるBET法で求めた
無水ケイ酸の比表面積と、無水ケイ酸を下記反応式(1
)に従ってLiA][4と反応させて発生した水素をガ
スクロマトグラフィーによシ定量した値から、下記計算
式に基づいて求めることができる。In order to measure the 7-ranol groups on the surface of the silicic anhydride thus obtained, various methods can be used to quantify them using their reactivity, but in the present invention, silicic anhydride determined by the BET method using N2 adsorption The specific surface area of and silicic anhydride are expressed by the following reaction formula (1
) can be determined based on the following calculation formula from the quantitative value of hydrogen generated by reacting with LiA][4 by gas chromatography.
ジオヤサン
445:5i−0)4+ Li1H4ウ8l−0−Li
+ (−81−0入…+≠馬↑(1)N:アボガドロ定
数 g、0.2J X /、0”A:無水ケイ酸の比
表面積〔mシ′2〕X:無水ケイ酸/?とLiAl1’
14の反応で発生する水素量 □(mo1/l)
一方、本発明の研磨剤分散液の他の成分であるアルミナ
としては、アルミナ質鉱石(ゴーキサイド)を電気炉で
溶融還元して得られる褐色アルミナ質砥粒、高純度のア
ルミナを電気炉で溶融して得られる白色アルミナ質砥粒
などが使用される。アルミナの結晶形は、α、β、γ等
いずれも可能であるが、特に好ましいのはα−アルミナ
である。アルミナ質砥粒の粒度分布、粒子形状、表面水
酸基密度等は特に限定されるものではなく、通常、アル
ミナ質砥粒として市販されているものであればいずれも
使用可能であり、被研摩物質に応じ選択されるが、研摩
剤組成物中への粗大粒子の混入は、被研摩物質表面のス
クラッチの原因となるため、避けるのが望ましく、通常
平均粒子径は0.07〜3μ、好ましくは0.0弘〜/
μ程度のアルミナ砥粒を使用するのが良い。Geoyasan445:5i-0)4+ Li1H4u8l-0-Li
+ (-81-0 entered...+≠H↑(1) N: Avogadro's constant g, 0.2J and LiAl1'
Amount of hydrogen generated in reaction 14 □ (mo1/l) On the other hand, alumina, which is another component of the abrasive dispersion of the present invention, is a brown alumina obtained by melting and reducing alumina ore (gawoxide) in an electric furnace. Alumina abrasive grains, white alumina abrasive grains obtained by melting high purity alumina in an electric furnace, etc. are used. The crystal form of alumina can be α, β, γ, etc., but α-alumina is particularly preferred. There are no particular limitations on the particle size distribution, particle shape, surface hydroxyl group density, etc. of the alumina abrasive grains, and any commercially available alumina abrasive grains can be used, depending on the material to be polished. However, it is desirable to avoid mixing coarse particles into the abrasive composition because it causes scratches on the surface of the material to be polished.The average particle size is usually 0.07 to 3μ, preferably 0. .0hiro~/
It is best to use alumina abrasive grains of μ size.
上述の無水ケイ酸及びアルミナを分散させる水性溶媒と
は、水のみ又は水に可溶な有機溶媒を含む水溶液を意味
する。水に可溶な有機溶媒としては、具体的にはメタノ
ール、エタノール、イソプロパツール、グリセリン等の
アルコール類、アセトン等のケトン類、酢酸メチル等の
エステル類、ギ酸、酢酸等の有機カルボン酸類、ジメチ
ルアミン等の有機アミン類、ホルマリン、アセトアルデ
ヒド等のアルデヒド類、ジオキサン、テトラヒドロフラ
ン等である。水性溶媒が水と有機溶媒の混合物である場
合水に対する有機溶媒の割合は、有機溶媒の種類によっ
て異なるが、水と均一層を形成する量であればよく特に
限定されな入水性溶媒としては、水及び/又はアルコー
ルが好ましく、特に水単独が好ましい。The aqueous solvent in which the silicic anhydride and alumina are dispersed means an aqueous solution containing only water or an organic solvent soluble in water. Examples of water-soluble organic solvents include alcohols such as methanol, ethanol, isopropanol, and glycerin, ketones such as acetone, esters such as methyl acetate, organic carboxylic acids such as formic acid and acetic acid, These include organic amines such as dimethylamine, aldehydes such as formalin and acetaldehyde, dioxane, and tetrahydrofuran. When the aqueous solvent is a mixture of water and an organic solvent, the ratio of organic solvent to water differs depending on the type of organic solvent, but the amount that forms a uniform layer with water is sufficient, and there are no particular limitations on water-absorbing solvents. Water and/or alcohol are preferred, and water alone is particularly preferred.
本発明の無水ケイ酸及びアルミナを水性溶媒に含有する
研摩剤組成物の調製方法は特に限定されるものではない
が、無水ケイ酸の水性分散液にアルミナゾルを混合する
か、又は無水ケイ酸の水性分散液にアルミナ粒子を分散
混合することによシ調製するのが好ましい。The method for preparing the abrasive composition containing silicic anhydride and alumina in an aqueous solvent of the present invention is not particularly limited, but may include mixing an alumina sol into an aqueous dispersion of silicic anhydride, or Preferably, it is prepared by dispersing and mixing alumina particles in an aqueous dispersion.
無水ケイ酸の水性分散液は、上記水性溶媒に、上述の無
水ケイ酸を!〜jo wt%含有するように分散させる
ことにより得られる。An aqueous dispersion of silicic anhydride is made by adding the above-mentioned silicic anhydride to the above-mentioned aqueous solvent! It is obtained by dispersing it so that it contains ~jo wt%.
水性溶媒への該無水ケイ酸の分散は、通常の攪拌機、ホ
モミキサー、高剪断ブレングー、タービンミキサー等を
利用して、均一に分散・混合する。2該無水ケイ酸の水
系溶媒中への分散が悪いと、沈降傾向が現われたり、粘
度が異常に高いものとなる要因にもなるので懸濁状態の
均一化を図るため高剪断型の分散機を用いることが望ま
しい。The silicic anhydride is uniformly dispersed and mixed in the aqueous solvent using a conventional stirrer, homomixer, high shear blender, turbine mixer, or the like. 2. If the silicic anhydride is poorly dispersed in the aqueous solvent, it may tend to settle or have an abnormally high viscosity. Therefore, a high shear type dispersion machine is used to make the suspension uniform. It is desirable to use
又、アルミナゾルを使用する場合、アルミナ粒子の分散
媒は上記水性溶媒と同様のものであるが、特に水及び/
又はアルコールが好ましく、アルミナゾル中に含有され
るアルミナの割合は/θ〜弘Q重量%程度である。In addition, when using alumina sol, the dispersion medium for alumina particles is the same as the above aqueous solvent, but especially water and/or
Alternatively, alcohol is preferable, and the proportion of alumina contained in the alumina sol is about /θ to HiroQ% by weight.
無水ケイ酸の水性分散液とアルミナゾル又はアルミナ粒
子の混合は、無水ケイ酸の水性溶媒への分散と同様、通
常の攪拌機、ホモミキサー等を利用して、均一に分散・
混合する。Mixing of the aqueous dispersion of silicic anhydride and alumina sol or alumina particles is carried out by using an ordinary stirrer, homomixer, etc., in the same manner as dispersing silicic anhydride in an aqueous solvent.
Mix.
かくして得られた無水ケイ酸及びアルミナを水性溶媒中
に含有する研摩剤組成物中のアルミナの無水ケイ酸に対
する割合は、研摩に於ける被加工材料の種類、研摩圧力
、固定プレート、回転数等の研摩加工条件により異なる
が通常ぶ
−rOX量チであるが、使用に際し被加工材料の種類、
加工条件に応じて、更に水で希釈して使用することも可
能である。The ratio of alumina to silicic anhydride in the thus obtained abrasive composition containing silicic anhydride and alumina in an aqueous solvent depends on the type of material to be processed during polishing, polishing pressure, fixed plate, rotation speed, etc. The amount of bu-rOX varies depending on the polishing conditions, but the type of material to be processed,
Depending on the processing conditions, it can be further diluted with water before use.
尚、本発明の研摩剤組成物は、必要に応じ、酸化ジルコ
ニウム、酸化セリウム等の砥粒、あるいはpH調整剤と
してジエチルアミン等の有機アミン類、苛性ソーダ、水
酸化アンモニウム、アンモニア等の塩基又は硝酸、酢酸
等の有機又は無機酸を添加することも可能である。The abrasive composition of the present invention may optionally contain abrasive grains such as zirconium oxide and cerium oxide, organic amines such as diethylamine as a pH adjuster, bases such as caustic soda, ammonium hydroxide, and ammonia, or nitric acid, It is also possible to add organic or inorganic acids such as acetic acid.
本発明の研摩材組成物はシリコンウェハーの如き金属等
の研摩に使用される。研摩方法としては通常市販の研摩
用又はラツビン用機械等を使用する方法が適用される。The abrasive composition of the present invention is used for polishing metals such as silicon wafers. As the polishing method, a method using a commercially available polishing or polishing machine is usually applied.
研摩剤の使用量、研摩圧力、研摩速度、研摩時間等は被
加工材料の種類、要求される表面仕上がりの状態等に応
じて適宜選定される。The amount of abrasive used, polishing pressure, polishing speed, polishing time, etc. are appropriately selected depending on the type of material to be processed, the required surface finish, etc.
以下、実施例により本発明を更に詳細に説明するが、本
発明は、以下の実施例により何等限定されるものではな
い。EXAMPLES Hereinafter, the present invention will be explained in more detail with reference to Examples, but the present invention is not limited in any way by the following Examples.
尚、表面シラノール基密度の測定は、以下の方法によジ
行なった。Incidentally, the surface silanol group density was measured by the following method.
無水ケイ酸を、温度/2θ℃、圧力/jwnHsF以下
で3時間減圧乾燥して付着水分の除去を行なう。次に脱
水したジオキサン30耐に対し該無水ケイ酸/、0Pを
加え、超音波等により十分分散させたスラリー液を調整
する。The anhydrous silicic acid is dried under reduced pressure at a temperature of 2θ° C. and a pressure of less than jwnHsF for 3 hours to remove adhering moisture. Next, the silicic anhydride/0P is added to the dehydrated dioxane 30 resistant, and a slurry liquid is prepared by thoroughly dispersing the slurry using ultrasonic waves or the like.
反応槽としてコjdのガラス製三角フラスコを使用し、
その中に0..3 f LvLiAIH,と脱水ジオキ
サン10m1を加え撹拌しておき、無水ケイ酸分散スラ
リーを注射器に二り/ m1分取後、反応槽に注入して
反応させる。該無水ケイ酸表面のシラノール基とLiA
lH4の反応にょシ発生した水素をガスクロマトグラフ
ィーによシ定量し、発生した水素iX’moli求める
。A cojd glass Erlenmeyer flask was used as the reaction tank.
There are 0. .. 3 f LvLiAIH, and 10 ml of dehydrated dioxane are added and stirred, and the silicic anhydride dispersion slurry is taken into a syringe in 2/ml portions, and then injected into the reaction tank and reacted. The silanol groups on the silicic anhydride surface and LiA
The amount of hydrogen generated during the reaction of lH4 is determined by gas chromatography to determine the amount of hydrogen iX'moli generated.
この場合の反応は前記反応式(1)の様に表わされるが
、この反応によればシラノール!/6につき水素分子7
個が発生する。別途N2吸着によるB、に、T、法で、
無水ケイ酸の比表面積ACrr?/?〕を求めておけば
次式により表面シラノール基密度を求められる。The reaction in this case is expressed as the reaction formula (1) above, and according to this reaction, silanol! 7 hydrogen molecules per /6
occurs. Separately, by the B, T, method by N2 adsorption,
Specific surface area ACrr of silicic anhydride? /? ], the surface silanol group density can be determined using the following equation.
N:アボガドロ定数 乙、0.23×1023参考例
/
乾式無水ケイ酸として日本アエロジル社のアエロジル井
200 (平均/次粒怪、/、<mμ、比表面積−00
dl?、シラノール基密度糺θ個/100p、 、全有
機炭素量0.03 wt%)を使用し、これをシラン系
カップリング剤のメチルトリメトキシシランを使用し、
100℃、70分間気相処理して得た粉体は全有機炭素
量が0.jWtlg、表面シラノール基密度が2,5個
/ / 00 A のものであった。N: Avogadro's constant O, 0.23 x 1023 Reference example / Nippon Aerosil Co., Ltd.'s Aerosil Well 200 as dry silicic acid (average/next particle size, /, < mμ, specific surface area -00
dl? , silanol group density θ/100p, total organic carbon content 0.03 wt%), and using methyltrimethoxysilane, a silane coupling agent,
The powder obtained by gas phase treatment at 100°C for 70 minutes has a total organic carbon content of 0. jWtlg, the surface silanol group density was 2.5//00 A.
この処理無水ケイ酸を脱イオン水に分散して得た各種濃
度のスラリー液の粘度を表7に示し念。これらのものは
77月を軽ても粒子の沈降fi認められ役かった。Table 7 shows the viscosities of slurry liquids of various concentrations obtained by dispersing this treated silicic anhydride in deionized water. These materials were effective even after 7 months as sedimentation of particles was observed.
参考例コ
参考例/と同じ乾式無水ケイ酸(アエロジル@aOO)
をn−ブチルアルコールと230℃、70分間常圧系で
気相処理して得られた粉体は全有機炭素量が0.F w
tチ、表面シラノール基密度が7.り個/100Aのも
のであった。Reference example/Same dry silicic anhydride as Reference example/(Aerosil@aOO)
The powder obtained by treating with n-butyl alcohol at 230°C for 70 minutes in a normal pressure system has a total organic carbon content of 0. Fw
t, the surface silanol group density is 7. It was 3 pieces/100A.
この処理無水ケイ酸を脱イオン水に分散して得た各種濃
度のスラリー液の粘度を表/に示した。これらのスラリ
ー液は77月を経ても粒子の沈降は認められなかつ念。Table 1 shows the viscosities of slurry liquids of various concentrations obtained by dispersing this treated silicic anhydride in deionized water. No sedimentation of particles was observed in these slurry liquids even after 77 months.
参考例3
参考例/と同じ乾式無水ケイ酸(アエロジル#、2oθ
)を20θ℃で2時間熱処理して得た粉体は、全有機カ
ーボン量が0,02 wt%、表面シラノール基密度が
コ、2@//θ0Aのものであった。Reference Example 3 Same dry silicic anhydride as Reference Example (Aerosil #, 2oθ
) was heat-treated at 20θ°C for 2 hours, and the powder had a total organic carbon content of 0.02 wt% and a surface silanol group density of 2@//θ0A.
この処理無水ケイ酸を脱イオン水に分散し、更にアンモ
ニア水でpHを/θ、jに調整して得た各種濃度のスラ
リー液の粘度を表/に示した。Table 1 shows the viscosities of slurry liquids of various concentrations obtained by dispersing the treated silicic anhydride in deionized water and adjusting the pH to /θ,j with aqueous ammonia.
これらのスラリー液は7ケ月を経ても粒子の沈降は認め
られなかった。No sedimentation of particles was observed in these slurry liquids even after 7 months.
参考例μ
参考例/と同じ乾式無水ケイ酸(アエロジル#200)
を、ヘキサメチルジシラザン(CH3)3s1−NH8
1(CH3)sの蒸気で1.200℃、30分間気相処
理して得た粉体は全有機炭素量がコ、/wt%、表面シ
ラノール基密度が0.r個/100)、のものであった
。Reference example μ Same dry silicic anhydride as Reference example/(Aerosil #200)
, hexamethyldisilazane (CH3)3s1-NH8
The powder obtained by gas-phase treatment with 1(CH3)s vapor at 1.200°C for 30 minutes has a total organic carbon content of 0.5%/wt% and a surface silanol group density of 0.000%. r pieces/100).
この処理無水ケイ酸をイソプロパツールの50容量チ水
溶液に分散して得た各種濃度のスラリー液の粘度を表/
に示した。The table below shows the viscosity of slurry liquids of various concentrations obtained by dispersing this treated silicic anhydride in a 50 volume aqueous solution of isopropanol.
It was shown to.
これらのスラリー液は/ケ月を経ても粒子の沈降は認め
られなかつ次。No sedimentation of particles was observed in these slurry liquids even after several months.
比較参考例/
参考例/と同じ乾式無水ケイ酸(アエロジル#soo’
)@そのまま脱イオン水に分散させた結果、S10!濃
度/ Owt%スラリー液の粘度(コ!℃)は!r、/
00 Q、p、と非常に高粘度のものであった。又、
J0wtL%スラリー液ではゲル化が著しく調整不能で
あった。Comparative Reference Example/ Same dry silicic anhydride (Aerosil #soo') as Reference Example/
) @ As a result of directly dispersing it in deionized water, S10! Concentration / Owt% What is the viscosity (℃) of the slurry liquid? r, /
It had a very high viscosity of 00 Q,p. or,
In the J0wtL% slurry liquid, gelation was significantly uncontrollable.
B102濃度jet%の低濃度スラリー液の粘度(Jr
℃)は/ J c、p、で低粘度であったが、3日後に
粒子の大部分が沈降してい次。Viscosity of low concentration slurry liquid with B102 concentration jet% (Jr
℃) had a low viscosity at /Jc,p, but after 3 days most of the particles had settled.
比較参考例コ
参考例/と同じ乾式無水ケイ酸(アエロジル#コOθ)
をへキサメチルジシラザン(CH,)s 5iNE−8
t (cH3)sの蒸気で35O℃、30分間気相処理
して得た粉体は、全有機炭素量が3,0wt%、表面シ
ラノール基密度が0..2 J個/ / 00 Aのも
のであった。Comparison reference example - Same dry silicic anhydride as Reference example (Aerosil#koOθ)
Hexamethyldisilazane (CH,)s 5iNE-8
The powder obtained by vapor phase treatment with t(cH3)s vapor at 350°C for 30 minutes has a total organic carbon content of 3.0 wt% and a surface silanol group density of 0. .. It was 2 J pieces/ / 00 A.
この処理無水ケイ酸をイソプロパツールの!θ容容量氷
水溶液分散した結果、Sin、濃度10wt%メスラリ
−液でt ! c、p、を示し、同様に20 wt%V
スラリー液で7,000 c、p、を示した。This treatment uses silicic anhydride for isopropanol! As a result of dispersing the ice-water solution in θ volume, t! c, p, and similarly 20 wt%V
The slurry liquid showed 7,000 c,p.
B102濃度10wt%メスラリ−液のものは比だ
較的低1度であるが、3日後に粒子の一部が沈降して埴
た。The B102 concentration 10wt% female slurry solution had a relatively low temperature of 1 degree, but some of the particles settled and crumbled after 3 days.
実施例/
参考例/で得られた表面シラノール基密度がJj個/
/ 00 Aの無水ケイ酸を/ Owt%含有する水性
分散液(分散媒:水)/lにアルミナゾルAs−!20
(8産化学工業(株製、At!03.20vrt% )
/ を及び水2tを混合したものを研摩剤としてシリ
コンウェハーの研摩を行なった。The surface silanol group density obtained in Example/Reference Example/ is Jj pieces/
Alumina sol As-! is added to an aqueous dispersion (dispersion medium: water)/l containing /00 A of silicic anhydride at /Owt%. 20
(Manufactured by Yasan Kagaku Kogyo Co., Ltd., At!03.20vrt%)
/ and 2 tons of water was used as an abrasive to polish a silicon wafer.
研摩方法としては、軟質金属からなる研摩テーブル及び
セミハードタイプのポリツ7ングクロス’e使用し、シ
リコンウェハーはワックスでウェハー貼付ブロックに固
定し、上記研摩剤を” Ornl/rriy+の割合で
一定速度で滴下しつつ研摩テーブルを! ORPM 、
ウェハー貼付ブロックを10oy/−の圧力を加えつつ
200 RI’Mで回転させて70分間研摩を行なった
。研摩されたウェハーの表面粗度はRmax = 0.
/μで高度の表面仕上がシを示した。As for the polishing method, a polishing table made of soft metal and a semi-hard type polishing cloth are used, the silicon wafer is fixed to a wafer attachment block with wax, and the above abrasive is dripped at a constant speed at a ratio of "Ornl/rriy+". While polishing table! ORPM,
Polishing was performed for 70 minutes by rotating the wafer-attached block at 200 RI'M while applying a pressure of 10 oy/-. The surface roughness of the polished wafer is Rmax = 0.
/μ showed a high degree of surface finish.
比較例/
/lに対し、アルミナゾルAB−j−20(日量化学工
業■製、Al2O3コOwt%)yt及び水2tを混合
したものを研摩剤として実施例5と同様クラッチが多く
発生していた。Comparative Example / In contrast to /l, a mixture of alumina sol AB-j-20 (manufactured by Nichichi Kagaku Kogyo ■, Al2O3CoOwt%) yt and water 2t was used as an abrasive, and many clutches were generated as in Example 5. Ta.
実施例λ
参考例/で得られた表面シラノール基密度が2.5個/
100Aの無水ケイ酸を/ Owtチ含有する水性分散
液(分散媒:水)/lにα−アルミナ(AES−T:住
友化学工業罪製、中心粒径0.3μ)jrを分散、混合
し、研摩剤を調製した。Example λ The surface silanol group density obtained in Reference Example/ is 2.5/
α-Alumina (AES-T: manufactured by Sumitomo Chemical Co., Ltd., center particle size 0.3μ) was dispersed and mixed in an aqueous dispersion (dispersion medium: water) containing 100A of silicic anhydride. , an abrasive was prepared.
両面型研摩機及びセミノ・−ドタイプのポリッシングク
ロスを使用し、ガリウム−砒素系化合物半導体基板は、
ワックスでウニ/・−貼付ブロックに固定し、上記研摩
剤を/θWLl/ misの割合で一定速度で滴下しつ
つ研摩テーブルf I/ ORPM、ウェハー貼付ブロ
ックを200 ? 7cmの圧力を加えつつ、/θRP
Mで回転させて、10分間研摩を行なった。Gallium-arsenic compound semiconductor substrates are polished using a double-sided polisher and a semi-node type polishing cloth.
The wafer was fixed to the wafer attachment block with wax, and the abrasive was dropped at a constant speed at a rate of /θWLl/mis while the polishing table f I/ORPM and the wafer attachment block were placed at 200? /θRP while applying 7cm pressure
Polishing was performed for 10 minutes by rotating with M.
研摩処理前の半導体基板の平均表面粗度は、o、o l
Asμtであったが、研摩処理後の平均表面粗度は0.
0θ/りμメであった。The average surface roughness of the semiconductor substrate before polishing treatment is o, o l
Asμt, but the average surface roughness after polishing was 0.
It was 0θ/μm.
比較例2
α−アルミナ(Am!:S−T:住友化学工業(株製、
中心粒径θ、3μ)10ot及び分散助剤として、硝酸
15?を水/lに分散、混合し、研摩剤を調整した。Comparative Example 2 α-Alumina (Am!: S-T: Sumitomo Chemical Co., Ltd.,
Center particle size θ, 3μ) 10ot and nitric acid 15mm as a dispersion aid. were dispersed and mixed in water/l to prepare an abrasive.
該研摩剤を使用し、実施例コと同様にガリウム−砒素系
化合物半導体基板の研摩処理を行なったところ、平均表
面粗度は、0.0弘jμ〆がら0、θ0≠Oμ〆となっ
た。When the abrasive was used to polish a gallium-arsenic compound semiconductor substrate in the same manner as in Example 1, the average surface roughness was 0.0 hμ〆 to 0, θ≠Oμ〆. .
本発明の研摩剤は、乾式法で製造された無水ケイ酸を表
面処理して得られた、表面クラノール基密度が特定の範
囲の無水ケイ酸及びアルミナが水性溶媒に分散されてお
シ、シリコンウェハー等の半導体基板や種々の金属の精
密研摩剤として使用した場合、高度な研摩精度が得られ
るという優れた効果を有する。The abrasive of the present invention is made by dispersing silicic anhydride and alumina, which are obtained by surface treating silicic anhydride produced by a dry method and having a surface cranol group density in a specific range, in an aqueous solvent. When used as a precision abrasive for semiconductor substrates such as wafers and various metals, it has the excellent effect of providing a high degree of polishing precision.
更に、本発明の研摩剤は上述の如き特定の無水ケイ酸を
使用するため貯蔵安定性が良好でちゃ/ケ月を経ても無
水ケイ酸粒子の沈降が無いか万一沈降するものがあって
も若干の振盪で容易に分散して均一のスラリーとなると
いう取扱い上好ましい性質を有する上、シリカの沈降防
止の目的で従来添加されていた、水浴性高分子等は添加
しなくても十分沈降防止効果があυ、・ よって研摩剤
として好まし、〈ない有機物の混入を避けることができ
るという利点も有する。Furthermore, since the abrasive of the present invention uses the specific silicic anhydride as mentioned above, it has good storage stability. Even after several months, the silicic acid anhydride particles do not settle, or even if some do. Not only does it have the favorable handling properties of being easily dispersed into a uniform slurry with slight shaking, but it also prevents silica from settling sufficiently without the addition of water-bathable polymers, etc., which were conventionally added to prevent the settling of silica. It is effective and therefore preferable as an abrasive, and also has the advantage of avoiding contamination with organic matter.
出 願 人 三菱化成工業株式会社 代 理 人 弁理士 長谷用 −(ほか7名)Sender: Mitsubishi Chemical Industries, Ltd. Representative Patent Attorney Hase - (7 others)
Claims (2)
2当り0.3以上3個以下の範囲の乾式法で製造された
無水ケイ酸を水性溶媒中に含有することを特徴とする研
摩剤組成物(1) Alumina and surface silanol group density is 100 Å^
An abrasive composition characterized in that an aqueous solvent contains silicic anhydride produced by a dry method in a range of 0.3 or more and 3 or less per 2.
分疎水化処理して表面シラノール基密度が100Å^2
当り0.3個以上3個以下の範囲としたものであること
を特徴とする特許請求の範囲第1項記載の研摩剤組成物(2) Silicic anhydride is produced by a dry method and is partially hydrophobized to have a surface silanol group density of 100 Å^2
The abrasive composition according to claim 1, wherein the abrasive composition has a range of from 0.3 to 3 pieces per abrasive composition.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61128319A JPS62285976A (en) | 1986-06-03 | 1986-06-03 | Abrasive composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61128319A JPS62285976A (en) | 1986-06-03 | 1986-06-03 | Abrasive composition |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62285976A true JPS62285976A (en) | 1987-12-11 |
Family
ID=14981830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61128319A Pending JPS62285976A (en) | 1986-06-03 | 1986-06-03 | Abrasive composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62285976A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002370167A (en) * | 2001-04-11 | 2002-12-24 | Mitsubishi Materials Corp | Abrasive and boring method using the abrasive |
JP2003277731A (en) * | 2002-03-26 | 2003-10-02 | Catalysts & Chem Ind Co Ltd | Abrasive particles and abrasives |
JP2003321700A (en) * | 2002-04-30 | 2003-11-14 | Catalysts & Chem Ind Co Ltd | Substrate cleaning particles, cleaning material containing the substrate cleaning particles, and substrate cleaning method |
KR101242897B1 (en) * | 2003-01-07 | 2013-03-12 | 닛키 쇼쿠바이카세이 가부시키가이샤 | Silica particles for polishing and polishing agent |
-
1986
- 1986-06-03 JP JP61128319A patent/JPS62285976A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002370167A (en) * | 2001-04-11 | 2002-12-24 | Mitsubishi Materials Corp | Abrasive and boring method using the abrasive |
JP2003277731A (en) * | 2002-03-26 | 2003-10-02 | Catalysts & Chem Ind Co Ltd | Abrasive particles and abrasives |
JP2003321700A (en) * | 2002-04-30 | 2003-11-14 | Catalysts & Chem Ind Co Ltd | Substrate cleaning particles, cleaning material containing the substrate cleaning particles, and substrate cleaning method |
KR101242897B1 (en) * | 2003-01-07 | 2013-03-12 | 닛키 쇼쿠바이카세이 가부시키가이샤 | Silica particles for polishing and polishing agent |
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