JPS62203381A - Semiconductor pressure detector - Google Patents
Semiconductor pressure detectorInfo
- Publication number
- JPS62203381A JPS62203381A JP4591386A JP4591386A JPS62203381A JP S62203381 A JPS62203381 A JP S62203381A JP 4591386 A JP4591386 A JP 4591386A JP 4591386 A JP4591386 A JP 4591386A JP S62203381 A JPS62203381 A JP S62203381A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- semiconductor pressure
- alumina substrate
- joining member
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 230000002265 prevention Effects 0.000 claims abstract description 7
- 238000001514 detection method Methods 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 abstract description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 11
- 239000007767 bonding agent Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体圧力検出装置に係り、特にその素子
取付体の構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor pressure detection device, and particularly to the structure of an element mounting body thereof.
第3図は従来の圧力センサの構造を示す断面図T、(1
)ld正圧力検出するシリコンダイヤフラム、(2)は
シリコンダイヤフラム(1)に歪が生じにくくするシリ
コン台座で外気をシリコンダイヤフラム(1)に導く第
1の貫通孔を有する。(3)は中央部に孔を有するアル
ミナ基板、(4)は中央部に外気をシリコンダイヤフラ
ム(1)に導くため第1の貫通孔に連なる第2の貫通孔
を有する圧力センサ用ケースであり、アルミナ基板で3
)と接着剤(5)により結合している。このケース(4
)とシリコン台座(2)とはアルミナ基板(3)を介し
て結合されている。(6)は一端がダイヤフラムの端子
に接続されるワイヤーで、外部からの出力信号や基阜電
圧の受授を行なう。Figure 3 is a sectional view T, (1) showing the structure of a conventional pressure sensor.
) The silicon diaphragm (2) for detecting positive pressure is a silicon pedestal that makes it difficult for distortion to occur in the silicon diaphragm (1), and has a first through hole that guides outside air to the silicon diaphragm (1). (3) is an alumina substrate with a hole in the center, and (4) is a pressure sensor case with a second through hole in the center connected to the first through hole for guiding outside air to the silicon diaphragm (1). , with alumina substrate 3
) and are bonded by adhesive (5). This case (4
) and the silicon pedestal (2) are coupled via an alumina substrate (3). (6) is a wire whose one end is connected to the terminal of the diaphragm, and receives and receives output signals and base voltage from the outside.
従来の圧力センサは以上のように構成されているので、
圧力センサ用ケース(4)とダイヤフラム(1)、シリ
コン台! (2)およびアルミナ基板(3)から成る圧
力センサ本体とを接着剤により結合する場合、圧力セン
サ用ケース(4)の第2の貫通孔が接着剤で塞がれると
いう問題点があった。Conventional pressure sensors are configured as described above, so
Pressure sensor case (4), diaphragm (1), and silicone stand! (2) and a pressure sensor body made of an alumina substrate (3) are bonded together with an adhesive, there is a problem in that the second through hole of the pressure sensor case (4) is blocked by the adhesive.
この発明は上記のような問題点を解消するためになされ
たもので素子取付体の貫通孔が接合部材により塞がらな
い半導体圧力検出装置を提供するものである。The present invention has been made to solve the above-mentioned problems and provides a semiconductor pressure detection device in which the through hole of the element mounting body is not blocked by the joining member.
この発明に係る半導体圧力検出装置は素子取付体の一部
に接合部材が貫通孔に達することを阻止する接合部材流
動阻止部を設けたものである。The semiconductor pressure detection device according to the present invention is provided with a joining member flow prevention portion that prevents the joining member from reaching the through hole in a part of the element mounting body.
この発明における半導体圧力検出装置は接合部材流動阻
止部により、接合部材の貫通孔への流れこみは阻止され
る。In the semiconductor pressure detection device according to the present invention, the joining member flow prevention portion prevents the joining member from flowing into the through hole.
第1図は、この発明の一実施例の断面図を示す。 FIG. 1 shows a sectional view of an embodiment of the invention.
図中1183図と同一符号は同一または相当部分てあり
説明は省略する。The same reference numerals as in FIG. 1183 indicate the same or corresponding parts, and the explanation will be omitted.
(4a) 、 (4b)は圧カセンサ用〃−ス(4)の
凹形の低面に設けられたアルミナ基板(3)の取付面の
内壁部(4C)と、この内壁部(4C)と第20M迎孔
(4d)との間の取付面にそれぞれ設けられた半円形凹
部である。(4a) and (4b) are the inner wall portion (4C) of the mounting surface of the alumina substrate (3) provided on the concave lower surface of the pressure sensor space (4), and this inner wall portion (4C). These are semicircular recesses provided on the mounting surface between the 20M receiving hole (4d) and the 20M receiving hole (4d).
この半円形四部(4a)(4b)を設けることにより上
面にダイヤフラム(11および台座(2)からなる圧力
センサ本体が取付られたアルミナ基板(3)を圧力セン
サ用ケース(4)の取付面に接着剤(5)により接着す
るに際して、この接着剤+5)が規定の量より少々多く
ても、半円形四部(4m) (4b)によって第2の貫
通孔(4d)への流動は阻止され、第2のに通孔(4d
)が接着剤(5)によって塞がることはない。By providing these four semicircular parts (4a) (4b), the alumina substrate (3), on which the pressure sensor body consisting of the diaphragm (11 and the pedestal (2)) is attached, can be attached to the mounting surface of the pressure sensor case (4). When bonding with the adhesive (5), even if the adhesive +5) is slightly larger than the specified amount, the semicircular four parts (4m) (4b) prevent it from flowing into the second through hole (4d), The second through hole (4d
) will not be blocked by the adhesive (5).
第2図はこの発明の他の実施例を示すものである。この
実施例では、圧力センサ用ケース(4)の圧力センサ本
体が取付られる取付面の第2の貫通孔(4d)の開口部
の周囲に壁部(4e)を設けたものである。この壁部(
4e)を設けることにより、圧力センサ本体を取付面に
取り付ける接着剤(5)が規定の量よりも過剰であって
も、この壁部(4e)によって接着剤(5)が第2の貫
通孔(4d)に達することを阻止でき、この第2の貫通
孔(4d)を接着剤(5)が塞ぐことはない。FIG. 2 shows another embodiment of the invention. In this embodiment, a wall (4e) is provided around the opening of the second through hole (4d) on the mounting surface of the pressure sensor case (4) to which the pressure sensor body is mounted. This wall (
4e), even if the adhesive (5) used to attach the pressure sensor body to the mounting surface is in excess of the specified amount, the adhesive (5) will not flow into the second through hole due to this wall (4e). (4d), and the adhesive (5) does not close this second through hole (4d).
この発明は以上説明したとおり、素子取付体の一部に接
合部材が貫通孔に達することを阻止する接合部材流動阻
止部を設けたものであるので半導体圧力検出装置の品質
を向上することができるという効果がある。As explained above, the present invention is provided with a joining member flow prevention part that prevents the joining member from reaching the through hole in a part of the element mounting body, so that the quality of the semiconductor pressure detection device can be improved. There is an effect.
第1図はこの発明の一実施例を示す断面図、第2図はこ
の発明の他の実施例をそれぞれ示す断面図、第3図は従
来の圧力センサを示す断面図である。
図において、(1)はシリコンダイヤフラム、(2)は
シリコン台座、(3)はアルミナ基板、(4)は圧力セ
ンサ用ケース、(5)は接着剤、(4a) (4b)は
半円形 四部、(4e)は壁部である。
なお、各図中において同一符号は同一または相当部分を
示す。FIG. 1 is a sectional view showing one embodiment of the present invention, FIG. 2 is a sectional view showing another embodiment of the invention, and FIG. 3 is a sectional view showing a conventional pressure sensor. In the figure, (1) is a silicon diaphragm, (2) is a silicon pedestal, (3) is an alumina substrate, (4) is a pressure sensor case, (5) is an adhesive, (4a) and (4b) are semicircular four parts. , (4e) is a wall portion. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (3)
取付台から成る半導体圧力検出素子と、前記取付台が接
合部材を介して取付られる素子取付面を有する素子取付
体と、この素子取付体に設けられ前記取付面に開口する
と共に前記ダイヤフラムに外気を導びく貫通孔と、前記
取付面と前記貫通孔の開口する部分との間の前記素子取
付体の一部に前記接合部材が前記貫通孔に達することを
阻止する接合部材流動阻止部を設けたことを特徴とする
半導体圧力検出装置。(1) A semiconductor pressure sensing element consisting of a diaphragm, a mounting base to which the diaphragm is mounted, an element mounting body having an element mounting surface to which the mounting base is mounted via a joining member, and a through hole that opens on the mounting surface and guides outside air to the diaphragm; and the joining member reaching the through hole in a part of the element mounting body between the mounting surface and the opening of the through hole. A semiconductor pressure detection device characterized in that a bonding member flow prevention section is provided to prevent the flow of a joining member.
する特許請求の範囲第1項記載の半導体圧力検出装置。(2) The semiconductor pressure detection device according to claim 1, wherein the joining member flow prevention portion has a convex shape.
する特許請求の範囲第1項記載の半導体圧力検出装置。(3) The semiconductor pressure detection device according to claim 1, wherein the joining member flow prevention portion has a concave shape.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4591386A JPS62203381A (en) | 1986-03-03 | 1986-03-03 | Semiconductor pressure detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4591386A JPS62203381A (en) | 1986-03-03 | 1986-03-03 | Semiconductor pressure detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62203381A true JPS62203381A (en) | 1987-09-08 |
Family
ID=12732484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4591386A Pending JPS62203381A (en) | 1986-03-03 | 1986-03-03 | Semiconductor pressure detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62203381A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01172721A (en) * | 1987-12-28 | 1989-07-07 | Matsushita Electric Ind Co Ltd | Semiconductor pressure sensor |
JPH01172719A (en) * | 1987-12-28 | 1989-07-07 | Matsushita Electric Ind Co Ltd | Semiconductor pressure sensor |
JPH0618344A (en) * | 1992-04-08 | 1994-01-25 | Danfoss As | Pressure sensor and manufacture thereof |
JPH06186104A (en) * | 1992-12-22 | 1994-07-08 | Fuji Electric Co Ltd | Semiconductor pressure sensor |
US5459351A (en) * | 1994-06-29 | 1995-10-17 | Honeywell Inc. | Apparatus for mounting an absolute pressure sensor |
-
1986
- 1986-03-03 JP JP4591386A patent/JPS62203381A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01172721A (en) * | 1987-12-28 | 1989-07-07 | Matsushita Electric Ind Co Ltd | Semiconductor pressure sensor |
JPH01172719A (en) * | 1987-12-28 | 1989-07-07 | Matsushita Electric Ind Co Ltd | Semiconductor pressure sensor |
JPH0618344A (en) * | 1992-04-08 | 1994-01-25 | Danfoss As | Pressure sensor and manufacture thereof |
JPH06186104A (en) * | 1992-12-22 | 1994-07-08 | Fuji Electric Co Ltd | Semiconductor pressure sensor |
US5459351A (en) * | 1994-06-29 | 1995-10-17 | Honeywell Inc. | Apparatus for mounting an absolute pressure sensor |
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