JPS6217156U - - Google Patents
Info
- Publication number
- JPS6217156U JPS6217156U JP10858685U JP10858685U JPS6217156U JP S6217156 U JPS6217156 U JP S6217156U JP 10858685 U JP10858685 U JP 10858685U JP 10858685 U JP10858685 U JP 10858685U JP S6217156 U JPS6217156 U JP S6217156U
- Authority
- JP
- Japan
- Prior art keywords
- metal
- ceramic semiconductor
- electrode
- layer
- electrical conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910052573 porcelain Inorganic materials 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims 5
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
第1図はこの考案の実施例の磁器半導体用電極
の断面図、第2図A―Cはその磁器半導体用電極
の各形成過程を示す断面図、第3図はこの考案の
他の実施例を示す断面図、第4図A―Bは他の実
施例の形成過程を示す断面図、第5図は熱処理に
よる電圧―電流特性曲線図、第6図は熱処理温度
とオーム性接触抵抗との関係を示す特性曲線図、
第7図は従来の磁器半導体用電極の断面図である
。
1…磁器半導体、2…基層、3…中間層、4…
表層、5,6…電極。
Fig. 1 is a sectional view of an electrode for a ceramic semiconductor according to an embodiment of this invention, Fig. 2 A-C is a sectional view showing each formation process of the electrode for a porcelain semiconductor, and Fig. 3 is another embodiment of this invention. 4A-B is a sectional view showing the formation process of another example, FIG. 5 is a voltage-current characteristic curve diagram due to heat treatment, and FIG. 6 is a diagram showing the relationship between heat treatment temperature and ohmic contact resistance. Characteristic curve diagram showing the relationship,
FIG. 7 is a sectional view of a conventional ceramic semiconductor electrode. DESCRIPTION OF SYMBOLS 1...Porcelain semiconductor, 2...Base layer, 3...Intermediate layer, 4...
Surface layer, 5, 6...electrodes.
Claims (1)
成された三層構造を有する磁器半導体用電極にお
いて、 前記電極が磁器半導体とのオーム性接触の良好
な金属からなる基層と、電気伝導度の大きい金属
からなる中間層と、耐食性の大きい金属からなる
表層とを具備し、前記中間層が前記基層と前記表
層とにより封止されてなることを特徴とする磁器
半導体用電極。[Claims for Utility Model Registration] An electrode for a ceramic semiconductor having a three-layer structure formed by coating a different metal film on the surface of a ceramic semiconductor, wherein the electrode is made of a metal that has good ohmic contact with the ceramic semiconductor. porcelain, comprising: a base layer made of a metal having high electrical conductivity; an intermediate layer made of a metal with high electrical conductivity; and a surface layer made of a metal with high corrosion resistance, the intermediate layer being sealed by the base layer and the surface layer. Electrodes for semiconductors.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10858685U JPS6217156U (en) | 1985-07-16 | 1985-07-16 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10858685U JPS6217156U (en) | 1985-07-16 | 1985-07-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6217156U true JPS6217156U (en) | 1987-02-02 |
Family
ID=30985916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10858685U Pending JPS6217156U (en) | 1985-07-16 | 1985-07-16 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6217156U (en) |
-
1985
- 1985-07-16 JP JP10858685U patent/JPS6217156U/ja active Pending
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