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JPS6217156U - - Google Patents

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Publication number
JPS6217156U
JPS6217156U JP10858685U JP10858685U JPS6217156U JP S6217156 U JPS6217156 U JP S6217156U JP 10858685 U JP10858685 U JP 10858685U JP 10858685 U JP10858685 U JP 10858685U JP S6217156 U JPS6217156 U JP S6217156U
Authority
JP
Japan
Prior art keywords
metal
ceramic semiconductor
electrode
layer
electrical conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10858685U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10858685U priority Critical patent/JPS6217156U/ja
Publication of JPS6217156U publication Critical patent/JPS6217156U/ja
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案の実施例の磁器半導体用電極
の断面図、第2図A―Cはその磁器半導体用電極
の各形成過程を示す断面図、第3図はこの考案の
他の実施例を示す断面図、第4図A―Bは他の実
施例の形成過程を示す断面図、第5図は熱処理に
よる電圧―電流特性曲線図、第6図は熱処理温度
とオーム性接触抵抗との関係を示す特性曲線図、
第7図は従来の磁器半導体用電極の断面図である
。 1…磁器半導体、2…基層、3…中間層、4…
表層、5,6…電極。
Fig. 1 is a sectional view of an electrode for a ceramic semiconductor according to an embodiment of this invention, Fig. 2 A-C is a sectional view showing each formation process of the electrode for a porcelain semiconductor, and Fig. 3 is another embodiment of this invention. 4A-B is a sectional view showing the formation process of another example, FIG. 5 is a voltage-current characteristic curve diagram due to heat treatment, and FIG. 6 is a diagram showing the relationship between heat treatment temperature and ohmic contact resistance. Characteristic curve diagram showing the relationship,
FIG. 7 is a sectional view of a conventional ceramic semiconductor electrode. DESCRIPTION OF SYMBOLS 1...Porcelain semiconductor, 2...Base layer, 3...Intermediate layer, 4...
Surface layer, 5, 6...electrodes.

Claims (1)

【実用新案登録請求の範囲】 磁器半導体の表面に異種金属皮膜を被着して形
成された三層構造を有する磁器半導体用電極にお
いて、 前記電極が磁器半導体とのオーム性接触の良好
な金属からなる基層と、電気伝導度の大きい金属
からなる中間層と、耐食性の大きい金属からなる
表層とを具備し、前記中間層が前記基層と前記表
層とにより封止されてなることを特徴とする磁器
半導体用電極。
[Claims for Utility Model Registration] An electrode for a ceramic semiconductor having a three-layer structure formed by coating a different metal film on the surface of a ceramic semiconductor, wherein the electrode is made of a metal that has good ohmic contact with the ceramic semiconductor. porcelain, comprising: a base layer made of a metal having high electrical conductivity; an intermediate layer made of a metal with high electrical conductivity; and a surface layer made of a metal with high corrosion resistance, the intermediate layer being sealed by the base layer and the surface layer. Electrodes for semiconductors.
JP10858685U 1985-07-16 1985-07-16 Pending JPS6217156U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10858685U JPS6217156U (en) 1985-07-16 1985-07-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10858685U JPS6217156U (en) 1985-07-16 1985-07-16

Publications (1)

Publication Number Publication Date
JPS6217156U true JPS6217156U (en) 1987-02-02

Family

ID=30985916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10858685U Pending JPS6217156U (en) 1985-07-16 1985-07-16

Country Status (1)

Country Link
JP (1) JPS6217156U (en)

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