JPS62157779A - Grindstone - Google Patents
GrindstoneInfo
- Publication number
- JPS62157779A JPS62157779A JP5986A JP5986A JPS62157779A JP S62157779 A JPS62157779 A JP S62157779A JP 5986 A JP5986 A JP 5986A JP 5986 A JP5986 A JP 5986A JP S62157779 A JPS62157779 A JP S62157779A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- peripheral surface
- grinding
- grindstone
- trepanning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000008188 pellet Substances 0.000 abstract description 18
- 230000002093 peripheral effect Effects 0.000 abstract description 10
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 239000004575 stone Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 6
- 239000006061 abrasive grain Substances 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 5
- 239000010432 diamond Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 B N) Chemical compound 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004091 panning Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/02—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing
- B28D1/04—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing with circular or cylindrical saw-blades or saw-discs
- B28D1/041—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing with circular or cylindrical saw-blades or saw-discs with cylinder saws, e.g. trepanning; saw cylinders, e.g. having their cutting rim equipped with abrasive particles
Landscapes
- Engineering & Computer Science (AREA)
- Mining & Mineral Resources (AREA)
- Mechanical Engineering (AREA)
- Drilling Tools (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は１例えばサイリスタ用のペレットをシリ：＋ン
（Ｓｉ）ウェーハより切抜（（ｔｒｅｐａｎｎｉｎｆ
； ） Ｌ／パニング）するときに用いられる研削砥石
に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention provides 1, for example, cutting out pellets for thyristors from a silicon (Si) wafer.
;) Regarding the grinding wheel used when performing L/Panning).
一般に、大電力制御用に用いられるサイリスタ（ｔｈｙ
ｒｉｓｔｅｒ ）用の素材は１円筒状のダイヤモンド砥
石によるトレパニングにより得られている。すなわち、
第３図に示すように、まず、Ｓｉウェーハ（Ａ）を接着
剤により基台ＣＢ）に固定し、トレパニング用のダイヤ
モンド砥石（Ｃ）を矢印ＣＤ）方向に送りながら回転さ
せることにより、円板状のペレット（Ｅ）を切抜いてい
た。Thyristors are generally used for high power control.
The raw material for (Rister) is obtained by trepanning with a cylindrical diamond grindstone. That is,
As shown in Fig. 3, first, the Si wafer (A) is fixed to the base CB) with adhesive, and a diamond grinding wheel (C) for trepanning is rotated while being fed in the direction of the arrow CD). A shaped pellet (E) was cut out.
しかしながら、従来のダイヤモンド砥石（Ｃ）によりＳ
ｉウェーハ（Ａ）を切抜くと、砥石（Ｃ）の内周面（Ｆ
）がＳｉウェーハ（Ａ）の板面（Ｇ）に対して直交して
いるので、第４図に示すように、ペレッ） （Ｅ）の外
周面と砥石（Ｃ）の内周面（Ｆ）が密接してしまう。そ
れゆえ、砥石（Ｃ’）の主軸の振動等の外乱が作用する
と、ペレッ） （Ｂ）の外周面にクラックなどの損傷（
Ｈ）・−・が発生する。その結果、ペレット（Ｅ）の歩
留が低下したり、サイリスタの信頼性に悪影響を及ぼす
等の不具合を生じている。However, with the conventional diamond grinding wheel (C), S
When the i-wafer (A) is cut out, the inner peripheral surface (F
) is perpendicular to the plate surface (G) of the Si wafer (A), so as shown in Figure 4, the outer peripheral surface of the pellet (E) and the inner peripheral surface (F) of the grindstone (C) become close. Therefore, when disturbances such as vibration of the main shaft of the grinding wheel (C') act, damage such as cracks occurs on the outer peripheral surface of the pellet (B).
H)... occurs. As a result, problems such as a decrease in the yield of pellets (E) and an adverse effect on the reliability of the thyristor occur.
本発明は、上記事情を勘案してなされたもので。 The present invention has been made in consideration of the above circumstances.
Ｓｉウェーハのトレパニングを損傷を生じることなく高
精度に切抜くことのできる研削砥石を提供することを目
的とする。An object of the present invention is to provide a grinding wheel that can trepann a Si wafer with high precision without causing damage.
円筒状をなすトレバニング用の砥石の内周面に逃げ角を
設け、加工中における砥石内周面とペレット外周面との
摺接による破損を防止するようにしたものである。A clearance angle is provided on the inner circumferential surface of the cylindrical grindstone for trebanning to prevent damage due to sliding contact between the inner circumferential surface of the grindstone and the outer circumferential surface of the pellet during processing.
以下１本発明の一実施例の研削砥石を図面を参照して詳
述する。DESCRIPTION OF THE PREFERRED EMBODIMENTS A grinding wheel according to an embodiment of the present invention will be described in detail below with reference to the drawings.
第１図及び第２図は、この実施例の研削砥石を示してい
る。この研削砥石は、有底円筒状の研削部（１）と、こ
の研削部（１）の底板（２）に同軸に且つ一体的に連結
され図示せぬ研削装置の主軸に取付けられる円柱状の取
付部（３）とから構成されている。しかして、研削部（
１）は、その側壁部の厚みが、 ０．５ｍｍ程度であっ
て、その構成は、有底円筒状をなし例えば銅などの金属
製の支持体（４）と、この支持体（４）の内外両周面に
被着された砥粒層（５）とからなっている。上記支持体
（４）の円筒をなす側壁の厚みは。1 and 2 show the grinding wheel of this embodiment. This grinding wheel consists of a cylindrical grinding part (1) with a bottom, a cylindrical part that is coaxially and integrally connected to the bottom plate (2) of the grinding part (1) and is attached to the main shaft of a grinding device (not shown). It consists of a mounting part (3). However, the grinding part (
1) has a side wall thickness of about 0.5 mm, and has a cylindrical shape with a bottom, and includes a support (4) made of metal such as copper, and a support (4) made of metal such as copper. It consists of an abrasive grain layer (5) coated on both the inner and outer peripheral surfaces. What is the thickness of the cylindrical side wall of the support (4)?
例えば０．５趨である。また、砥粒層（５）は、均等に
分散して支持体（４）に固着されたダイヤモンド砥粒（
７）・・・と、このダイヤモンド砥粒（７）・・・を分
散保持する例えば黄銅、銅等の結合剤（８）とからなっ
ている。For example, it is 0.5 trend. The abrasive grain layer (5) also includes diamond abrasive grains (
7)... and a binder (8) made of brass, copper, etc., which disperses and holds the diamond abrasive grains (7)....
この砥粒層（５）は、電着又は焼結により支持体（４）
に固着されたものである。しかして、支持体（４）の内
周面（９）は、底板（２）の主面に直交する法線（Ｎ）
に対して、角度θだけ外側に傾斜している。つまり。This abrasive layer (5) is applied to the support (4) by electrodeposition or sintering.
It is fixed to. Therefore, the inner circumferential surface (9) of the support (4) is aligned with the normal (N) perpendicular to the main surface of the bottom plate (2).
, it is inclined outward by an angle θ. In other words.
研削部（１）の内側には、逃げ角θが設けられている。A relief angle θ is provided inside the grinding portion (1).
この逃げ角θは１例えば１度に設定する。一方。This relief angle θ is set to 1 degree, for example. on the other hand.
支持体（４）の外周面α〔は、支持体（４）の軸線α℃
と平行に設定されている。The outer circumferential surface α of the support (4) is the axis α°C of the support (4)
is set parallel to.
上記構成の研削砥石において、軸線αυのまわり矢印α
一方向に回転させながら、矢印α国方向に送り。In the grinding wheel with the above configuration, the arrow α around the axis αυ
While rotating in one direction, send it in the direction of arrow α.
基台Ｑ４）に接着されたＳｉウェーハ（１［有］のトレ
パニング加工を行う場合、研削部（１）に逃げ角θが設
けられているので、第２図に示すように、ペレットｔＩ
５１の外周面αηと研削部（１）の内周面（９）とは接
触しない。When performing the trepanning process on the Si wafer (1) bonded to the base Q4), since the grinding part (1) is provided with a clearance angle θ, the pellet tI
The outer circumferential surface αη of 51 and the inner circumferential surface (9) of the grinding portion (1) do not contact.
したがって、研削装置の主軸が外乱により軸線に交差す
る方向に振動しても、ペレッ） （Ｌｅにはクラック、
チッピング等の損傷を惹起することはない。Therefore, even if the main shaft of the grinding device vibrates in the direction crossing the axis due to disturbance, there will be cracks in Le.
It does not cause damage such as chipping.
したがって、ペレットの歩留が高くなるとともに。Therefore, along with the pellet yield being higher.
このペレットを用いる例えばサイリスタなどの製品の信
頼性向上に寄与する。This contributes to improving the reliability of products such as thyristors that use these pellets.
なお、上記実施例において、砥粒層の結合剤としては、
金属を用いているがレジノイドを用いてもよい。また、
ダイヤモンド砥粒の代りに、ボラゾン（窒化硼素、 Ｂ
Ｎ）、酸化アルミニウム（ＡＬｚ Ｏｓ ） 。In addition, in the above examples, the binder of the abrasive grain layer is as follows:
Although metal is used, resinoid may also be used. Also,
Borazon (boron nitride, B
N), aluminum oxide (ALzOs).
炭化珪素（ｓｉｃ）を用いてもよい。Silicon carbide (SIC) may also be used.
この発明の研削砥石は、内側に逃げ角を設けたのでトレ
パニング加工により切抜かれたペレットの外周面が、研
削砥石の内周面と摺接しない。したがって、ペレットに
チッピング、クラック等の損傷を惹起することはない。Since the grinding wheel of the present invention has a clearance angle on the inside, the outer circumferential surface of the pellet cut out by trepanning does not come into sliding contact with the inner circumferential surface of the grinding wheel. Therefore, damage such as chipping and cracking is not caused to the pellets.
その結果、ペレットの歩留が向上するとともに、このペ
レットを用いる例えばサイリスタなどの製品の信頼性向
上に役立つ。As a result, the yield of pellets is improved and the reliability of products such as thyristors using these pellets is improved.
１１１１１ｉＱＩ ＩＪ十塁４０Ｍ −中ｕ： ５＋１
Ｍ 之８１１ ｒ＋ｒ、 ｒ ｆ二・・・＝ｉ（−口
Ｉ第２図は第１図の研削砥石によるトレパニング加工の
説明図、第３図は従来におけるＳｉウェーハのトレバニ
ング加工を示す図、第４図は第３図の方法の欠点説明図
である。
（１）：研削部、 （３） ：取付部。
代理人 弁理士 則 近 憲 佑
同 竹 花 喜久男
第１図
第３図
Ｆ11111iQI IJ 10th base 40M - Middle u: 5+1
M No. 811 r+r, r f2...=i (-口I Figure 2 is an explanatory diagram of the trepanning process using the grinding wheel in Figure 1, and Figure 3 is a diagram showing the conventional trepanning process for Si wafers. Figure 4 is an explanatory diagram of the drawbacks of the method shown in Figure 3. (1): Grinding part, (3): Mounting part. Agent: Patent attorney Noriyuki Chika Yudo Kikuo Takehana Figure 1 Figure 3 F
Claims (2)
用部となっている中空円筒状の研削部と、上記研削部の
他端部側に同軸に連設され た取付部とを具備し、上記研削部の研削作 用部となっている一端部の少なくとも内側には逃げ角が
形成されていることを特徴とする研削砥石。(1) A hollow cylindrical grinding part, at least one end of which serves as a grinding part for trepanning, and a mounting part coaxially connected to the other end of the grinding part, A grinding wheel characterized in that a clearance angle is formed at least on the inside of one end that serves as a grinding action part.
許請求の範囲第１項記載の研削砥石。(2) The grinding wheel according to claim 1, wherein the clearance angle is 0.1 degree or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61000059A JPH0671711B2 (en) | 1986-01-06 | 1986-01-06 | Grinding wheel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61000059A JPH0671711B2 (en) | 1986-01-06 | 1986-01-06 | Grinding wheel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62157779A true JPS62157779A (en) | 1987-07-13 |
| JPH0671711B2 JPH0671711B2 (en) | 1994-09-14 |
Family
ID=11463632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61000059A Expired - Lifetime JPH0671711B2 (en) | 1986-01-06 | 1986-01-06 | Grinding wheel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0671711B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992012837A1 (en) * | 1991-01-15 | 1992-08-06 | Tyrolit Schleifmittelwerke Swarovski K.G. | Hollow drill |
| JPH0740068U (en) * | 1993-12-28 | 1995-07-18 | ノリタケダイヤ株式会社 | Cup wheel |
| EP2112967A1 (en) * | 2007-02-22 | 2009-11-04 | Hana Silicon, Inc. | Method for manufacturing silicon matter for plasma processing apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5924213U (en) * | 1982-08-09 | 1984-02-15 | ユニカ株式会社 | diamond core drill |
| JPS5966521U (en) * | 1982-10-27 | 1984-05-04 | 三菱重工業株式会社 | drilling tool |
-
1986
- 1986-01-06 JP JP61000059A patent/JPH0671711B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5924213U (en) * | 1982-08-09 | 1984-02-15 | ユニカ株式会社 | diamond core drill |
| JPS5966521U (en) * | 1982-10-27 | 1984-05-04 | 三菱重工業株式会社 | drilling tool |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992012837A1 (en) * | 1991-01-15 | 1992-08-06 | Tyrolit Schleifmittelwerke Swarovski K.G. | Hollow drill |
| JPH0740068U (en) * | 1993-12-28 | 1995-07-18 | ノリタケダイヤ株式会社 | Cup wheel |
| EP2112967A1 (en) * | 2007-02-22 | 2009-11-04 | Hana Silicon, Inc. | Method for manufacturing silicon matter for plasma processing apparatus |
| EP2112967A4 (en) * | 2007-02-22 | 2012-03-28 | Hana Silicon Inc | Method for manufacturing silicon matter for plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0671711B2 (en) | 1994-09-14 |
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