JPS62145728A - Functional deposited film and manufacture of the same - Google Patents

Abstract

PURPOSE:To improve reproducibility of film formation and film quality and making film properties uniform by a method wherein two or more kinds or raw material compounds for forming deposited films and an activation species which has chemical reaction with those compounds are introduced into a film forming space through separate transfer spaces. CONSTITUTION:Raw material for producing activation species such as H2 is introduced into an activation space 202 and activation species such as hydrogen radical is produced by the application of activation energy supplied by a microwave source 206 and introduced into a film forming space 201 through a transfer space 213. On the other hand, a compound A and a compound B which are raw materials for forming a semiconductor such as (CH3)2Ga and AsH3 are supplied through a transfer space 205 and mixed with the above mentioned activation species in the part of the downstream side of the open outlet of the transfer space 205 and mutual chemical reaction is induced. The mixed gas composed of the compound A, the compound B and the activation species is introduced into a film forming space 201 and gap type electrodes 103 are formed on the semiconductor layer 102 of a substrate 101 provided in the film forming space 201.

Description

Detailed Description of the Invention <Field of Application in Industry> The present invention is directed to a functional film, particularly a so-called non-single-crystalline functional film, which is amorphous to polycrystalline and is useful for applications such as semiconductor devices. Concerning membranes and their manufacturing methods.

<Prior art> Vacuum deposition method, plasma CVD method, thermal CVD method, photo CVD method 1 reactive sputtering method, ion blating method, etc. have been tried for forming the deposited film, and generally, plasma CVD method is used. Laws are widely used and corporatized.

Since the deposited films obtained by these deposited film formation methods are required to be applied to electronic devices that require higher functionality, Hyakunen et al. Usage environment characteristics and even uniformity.

There is room for further improvement in overall characteristics in terms of productivity and mass production, including reproducibility.

By the way, the reaction process in forming a deposited film by the conventionally popular plasma CVD method is considerably more complicated than that of the conventional so-called thermal CVD method, and there are many unknown points about the reaction mechanism. There wasn't. In addition, there are many formation parameters for the deposited film (e.g., substrate temperature, flow rate and ratio of introduced gas, pressure during formation, high frequency power, electrode structure 9 reaction vessel structure, pumping speed, plasma generation method, etc.). Due to the combination of these parameters, the plasma sometimes becomes unstable, which often has a significant negative effect on the deposited film. Moreover,
The reality is that parameters unique to each device must be selected for each device, making it difficult to generalize manufacturing conditions.

Among them, for example, it is currently considered best to form an amorphous silicon film using the plasma CVD method in that it can develop electrical and optical properties that fully satisfy each application. .

According to Hyakunen et al., depending on the application of the deposited film, it is necessary to fully satisfy the requirements of large area, uniformity of film thickness, and uniformity of film quality, and mass production with reproducibility.
Formation of deposition IQ by the method requires a large capital investment in mass production equipment, the control items for mass production are complicated, the control tolerance is narrow, and the adjustment of the equipment is delicate. These have been pointed out as problems that should be improved in the future.

Furthermore, depending on the type of deposited film, the plasma CVD method is not necessarily suitable.In addition, the drawback of the plasma CVD method is the effect of plasma damage on the film, which may affect the required film properties and prevent it from fulfilling the desired function. Examples include becoming. Particularly in the production of deposited films for highly functional electronic devices, the effects of the plasma damage mentioned above directly appear on the film properties and must be avoided as much as possible.

On the other hand, the conventional technique using the normal CVD method requires high temperatures and has not been able to provide a deposited film with characteristics that are necessarily satisfactory at a commercial level.

These problems to be solved are particularly important in the first part of the periodic table.
This is a concern when creating a functional deposited film composed of Group I to Group II elements.

- As mentioned above, in forming a functional film, there is a strong desire to develop a method of forming a functional film that can be mass-produced using low-cost equipment while maintaining its practically usable characteristics and uniformity.

OBJECTIVES> The present invention provides a novel method for forming a deposited film that does not rely on conventional methods, while eliminating the drawbacks of the above-mentioned conventional methods for forming a deposited film, particularly the plasma CVD method.

The purpose of the present invention is functionality! ! It is possible to easily manage the properties of the film, maintain at least the properties of the high-quality film obtained by the conventional method, and improve the deposition rate while simplifying the management of the film formation conditions and mass producing the film. An object of the present invention is to provide a deposited film and a method for forming the same that can easily achieve the following.

Structure> The functional deposited film of the present invention comprises a compound (A) represented by the following general formula (A), which is a raw material for forming the functional deposited film, and an active species that chemically reacts with the compound (A). When introducing the compound (A) into the film forming space, the active species is introduced into the film forming space through a transport space (A) communicating with the film forming space, and the compound (A) is provided in the transport space (A) and into the film forming space. It is characterized in that it is formed by being introduced into the film forming space through the communicating transport space (B) and causing a chemical reaction therebetween.

The method for producing a functional deposited film of the present invention uses the following general formula (A) and (
Compound (A) and compound (B) respectively represented by B),
An active species that chemically reacts with at least one of these compounds (A) and (B) is introduced into the film forming space to form a functional deposited film on the substrate disposed within the film forming space. In the method for producing a functional deposited film, the active species passes through a transport space (A) that communicates with the film formation space on the downstream side, and the compound (A) and compound (B) pass through the transport space ( A)
The film is introduced into the film forming space through a transport space CB provided therein and communicating with the film forming space.

Rn M m ---------------(A)A
a B b ----------------(B)
However, m is a positive integer equal to or an integral multiple of the valence of H, n
is a positive integer that is equal to or an integral multiple of the valence of M, M is an element belonging to Group Ⅰ of the periodic table, R is hydrogen (H), halogen (
X) and each represent a hydrocarbon group.

a is a positive integer equal to or an integral multiple of the valence of B, b is A
A is an element belonging to Group V of the periodic table, B is hydrogen (H), halogen (X
), each represents a hydrocarbon group.

<Specific description of the invention> In the present invention, active species are transported through the transport space (A),
Moreover, the compound (A) and the compound (B) are introduced into the film forming space through the transport space (B), but by varying the opening position of the transport space (B) within the transport space (A), , transport space for compound (A) and compound (B) (A
) can be set as appropriate. In this case, the transport space (B) for compound (A) and compound (B)
The transport speed at the pump can also be selected as one of the control parameters for controlling the residence time.

In the present invention, the transportation space (A) and the transportation space (B
) is open to the film forming space, where active species or compounds (
When A) and compound (B) are excited as necessary, the method is appropriately determined depending on the lifetimes of compound (A) and compound (B) in the excited state.

In the case of the present invention, while the compound (A) and compound (B) are generally transported in their ground state to the film forming space, the active species used are often relatively short-lived, so the transport space is The opening position to the film forming space (A) is preferably closer to the film forming space.

The opening of the transport space (A) to the film forming space and the transport space (
It is desirable that the opening of B) into the transport space (A) is shaped like a nozzle or an orifice. In particular, in the case of a nozzle-shaped nozzle, by positioning it near the film-forming surface of the substrate disposed within the film-forming space of the nozzle opening, the film-forming efficiency and the effective raw material consumption efficiency can be significantly increased.

In the present invention, the active species is transported into the transport space (A) in its 1-
Compound (A) and compound (B) are generated in an activation space that communicates with the transport space (B) as needed, and are excited in an excitation space that communicates with the transport space (B) upstream thereof. are not limited; for example, the transport space (A) can also be used as an activation space, and the transport space (B) can also be used as an excitation space.

In particular, when both transport spaces are used as activation space and excitation space, respectively, the same means can be used as activation means and excitation means without providing them separately.

For example, by making the transport space (A) and the transport space (B) have a double glass tube structure, and providing an RF 7' lasma device or a microwave plasma device around the outer glass tube, the transport space (A) and the transport space (B) can be constructed in the same manner in the transport direction. Active species and excited state compounds (A) and U-compounds (B) can be generated at the same time.

In the present invention, it is preferable that the openings of the transport space (A) and the transport space (B) are located inside the film forming space.

In the present invention, the transportation space (A) and the transportation space (A)
By providing not only one but a plurality of double space structures in the film forming apparatus, the active species and compounds (B) to be introduced into each double space structure may be By changing the types of compound A) and compound (B), deposited films having different characteristics can be formed on each of the substrates disposed in the film forming space.

Moreover, the transport space (B) is a compound (A) and a compound (B).
When the compounds are mixed and transported, the same space may be used to transport each compound, and when they are transported separately, the space may be divided into spaces corresponding to the compounds (A) and (B).

Furthermore, according to the method of the present invention, conventional plasma CVD
Unlike the conventional method, the deposition space, the activation space, and the excitation space provided as necessary are separated, so the influence of contaminants from the inner walls of the deposition space and residual gas remaining in the deposition space is reduced. It has the characteristic of being able to virtually eliminate the

In addition, the "active species" in the invention refers to a species that chemically interacts with at least one of the compound (A) and the compound (B) to impart energy to at least one of the compound (A) and the compound (B). or give compound (A) or compound (B
) is responsible for chemically reacting with the compound (A) or compound (B) to form a deposited film. Therefore, the active species may include constituent elements constituting the deposited film to be formed, or may not include such constituent elements.

The compound (A) and the compound (B) represented by the general formula (A) and general formula (B), respectively, used in the present invention may be used in the space where the substrate on which the film is formed exists. It is more desirable to select a material that causes molecular collision with the active species of the substrate to cause a chemical reaction and spontaneously generates chemical species that contribute to the formation of the deposited film formed on the substrate.

However, in the case where the active species is inert or does not have such activity in its normal state of existence, compound (A) or compound (B) does not contain the active species. The compound (A) or It is necessary to bring the compound (B) into an excited state where it can chemically react with the active species, and the compound that can be put into such an excited state is used as the compound (A) and compound (B) used in the method of the present invention. ) is adopted as one of the types.

Note that in the present invention, compound (A) or compound (B)
When specifically indicating a substance in which is in the above-mentioned excited state, it will be referred to as [excited species (A) or compound (B)] hereinafter.

In the present invention, when compound (A) or compound (B) is excited in advance as necessary to generate excited state compound (A) or excited state compound (B), the The excited-state compound (A) or the excited-state compound (B) from the transport space (B) is preferably such that its lifetime is 0.
It is desirable to have a long life, preferably 0.1 seconds or more, optimally 1 second per second, but in any case, it is selected and used as desired, and this compound ( The constituent elements of A) and compound (B) constitute the main components constituting the deposited film formed in the film forming space, respectively.

When forming a deposited film in the film-forming space, the active species are simultaneously introduced into the film-forming space from the transport space (B), and the compound (A) and the compound containing the constituent elements that will be the main constituents of the deposited film to be formed are introduced into the film-forming space. It chemically interacts with at least one of (B) in phase V. As a result, a desired deposited film can be easily formed on a desired substrate. According to the method of the present invention, the deposited film that is formed without generating plasma in the film-forming space is not adversely affected by etching action or other effects such as abnormal discharge action. Further, according to the present invention, the atmospheric temperature in the film forming space and the substrate temperature are arbitrarily controlled as desired.

A more stable CVD method can be achieved.

One of the differences between the method of the present invention and the conventional CVD method is that active species activated in advance in an "activation space (C)" different from the film forming space are used. This makes it possible to dramatically increase the deposition rate compared to conventional CVD methods, and at the same time to obtain a high-quality film.In addition, the substrate temperature during deposition film formation can be further reduced. This makes it possible to provide deposited films with stable film quality in large quantities industrially and at low cost.

In the present invention, the active species generated in the activation space (A) are not only generated by energy such as electric discharge, light, heat, etc., or by a combination thereof, but also by contact with or addition of a catalyst, etc. may be done.

In the present invention, the compound represented by the general formula (A) (
A) The following compounds can be mentioned as compounds that can be effectively used as RnMm.

In the present invention, compound (A) RnMm and (B) compound (
B) The following compounds can be mentioned as compounds that can be effectively used as AaBb.

That is, as M, an element belonging to Group Ⅰ of the periodic table, specifically, an element belonging to Group Ⅲ B of B, Au, Ga, In, and Tfl, rAJ, an element belonging to Group V of the periodic table, specifically. Specifically, N, P.

Compounds containing elements belonging to Group V B, such as As, Sb, and Bi, can be cited as Compound (A) and Compound (B), respectively.

rRJ and rBJ include monovalent, divalent and trivalent hydrocarbon groups derived from linear and side chain saturated hydrocarbons and unsaturated hydrocarbons, or saturated or unsaturated monocyclic hydrocarbon groups. and compounds having monovalent, divalent, and trivalent hydrocarbon groups derived from polycyclic hydrocarbons.

As an unsaturated hydrocarbon group, the carbon-carbon bond is not only a single type of bond, but also a double bond.

Those having at least two types of double bonds and triple bonds can also be effectively adopted as long as they are different from each other in achieving the object of the present invention.

Further, in the case of an unsaturated hydrocarbon group having a plurality of double bonds, it does not matter whether the double bonds are non-integrated double bonds or integrated double bonds.

Examples of acyclic hydrocarbon groups include alkyl groups, alkenyl groups,
Alkynyl group, alkylidene group.

Preferred examples include an alkenylidene group, an alkynylidene group, an alkylidine group, an alkenylidine group, an alkynylidine group, etc. In particular, the number of carbon atoms is preferably 1 to 10, more preferably 1 to 7 carbon atoms, and most preferably carbon number 1 to 5 is desirable.

In the present invention, as the compound (A) and compound (B) to be effectively used, compounds that are gaseous in a standard state or that can be easily vaporized in the usage environment are selected. rRJ and “M” and rAJ and rBJ listed in 1.
In the selection of r R, J and r
A combination of MJ and rAJ and "B" is selected.

In the present invention, specific examples of compounds that can be effectively used as the compound (A) include BeMe3°AM? Me6. G
aMe3. InMe3゜TiMe3, BEt3, A
, uEt6°GaEt3. InEt3. T, 1LEt3
．． BX3゜B2H6, Ga2H6, etc. are effectively used as compounds (B), such as Me3
N, Me3P, Me3As, Me3S.

Me3Bi, Et3N, Et3P, Et3As.

Et3Sb, Et3Bi, NX3. PX3゜Asx3
, NH3, PH3, AsH3.

Examples include SbH3.

In the above, X is halogen (F, CI).

Br, I), Me represent a methyl group, and Et represents an ethyl group.

The lifetime of the active species used in the present invention is preferably short in consideration of reactivity with compound (A) and/or CB), and ease of handling during film formation and transport to the film formation space. Considering this, the longer the better. Furthermore, the lifetime of the active species also depends on the internal pressure of the film forming space.

Therefore, the active species to be used are selected and determined in such a way that a functional film having the desired properties can be effectively obtained, taking production efficiency into account. Active species having a long lifespan are appropriately selected and used.

The active species used in the present invention has a lifespan of:
The active species having a lifespan appropriately selected in view of the above points is appropriately selected as desired from within the compatible range of chemical affinity with the compound (A) specifically used, but preferably, Its lifespan is IXI O-4 seconds or more, more preferably t, in an environment within the scope of the present invention.
xto-: 1 second or more, most preferably lXlO-2 seconds or more.

The active species used in the present invention should minimize its function as a so-called initiator when the chemical reaction with compound (A) or/and (B) occurs in a chain reaction. From a good point of view, the amount introduced into the film forming space should be sufficient to ensure that the chemical reaction occurs efficiently in a chain reaction.

The active species used in the present invention are introduced into the film forming space (A) at the same time as forming the deposited film in the film forming space (A),
The compound (A) and compound (B) or/and the compound (
Chemically interacts with the excited species (A) of A) or/and the excited species of compound (B). As a result, an m-v group compound deposited film having desired functionality can be easily formed on a desired substrate.

According to the present invention, a more stable CVD method can be achieved by arbitrarily controlling the atmospheric temperature and substrate temperature of the film forming space (A) as desired.

In the present invention, the raw material introduced into the activation space (C) to generate active species is preferably a gaseous or easily vaporizable substance, which can generate hydrogen radicals. , specifically H2, D2. Examples include HD, and rare gases such as He and Ar may also be used.

] - Activated species are generated by adding activation energy such as heat, light, or electric discharge to the above-mentioned material in the activation space (C). This active species is introduced into the film forming space (A). At this time, the lifespan of the active species is desirably IX], O-4
The compound (A) and compound (B) introduced into the film forming space (A) are increases the efficiency of chemical reactions with

Activation energy that causes an activation effect on the active species generating substance in the activation space (C) includes thermal energy such as resistance heating, infrared heating, laser light, and mercury lamp light.

Light energy such as halogen light, microwave.

Examples include electric energy using discharge such as RF, low frequency, and DC, and these activation energies may act alone on the active species generating substance in the active space (C).

Further, two or more types may be used in combination.

Compound (A) and compound (B) introduced into the film forming space (A)
) and active species, those listed above should be selected from those listed above, which can cause a chemical reaction by mutual collision at the molecular level and deposit a functional film on the desired substrate. However, compound (A)
.

Depending on the selection of the compound (B) and the active species,
When the chemical reactivity is poor, or when a chemical reaction is to be carried out more effectively to efficiently form a deposited film on the substrate, the compound (A) is added in the film forming space (A). ,
There is no problem in using the reaction promoting energy that acts on the compound (B) and/or the active species, such as the activation energy used in the above-mentioned activation space (C). Or, before introducing the compound (A) or compound (B) into the film forming space (A), bring the compound (A) or compound (B) into the above-mentioned excited state in another activation space (D). Therefore, excitation energy may be applied.

Compound (A) introduced into the film forming space (A) in the present invention
The ratio of the total amount of compound (B) and the amount of active species introduced from the activation space (C) depends on the deposition conditions, the types of compound (A), compound (B), and active species, and the desired functional film formation. Although it can be determined as desired depending on the characteristics of
0:1 to 1:10 (introduction flow rate ratio) is appropriate;
More preferably, the ratio is 500:1 to 1:5.

When the active species does not cause a chain chemical reaction with compound (A) and/or compound (B), the above introduction amount ratio is preferably lO:1 to 1:10, more preferably 4
:1 to 2:3 is desirable.

The internal pressure of the film-forming space (A) during film-forming is as follows:
A), the compound (B) and the active species are selected as appropriate depending on the type and deposition conditions, but preferably lX1
0-2~5X103Pa.

More preferably 5Xl (12 to 1X103Pa).

Optimally, it is desirable that txto-t ~5X102Pa. In addition, if it is necessary to heat the substrate during formation, the substrate temperature is preferably 50 to 1000.
The temperature is preferably 100-900'0, most preferably 100-750°C.

In the present invention, the substrate used for film formation is:
It may be electrically conductive or electrically insulating. As the conductive substrate, for example, NiCr.

Stainless steel, AJlj, Cr, Mo, Au, Ir.

N b , T a , V , T i , P t
, Pd, or alloys thereof.

Examples of the electrically insulating substrate include films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, heptarose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, and polyamide;
glass.

Ceramic, paper, etc. are commonly used. Preferably, at least one surface of these electrically insulating substrates is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, its surface is NiCr.

Afl, Cr, Mo, Au, Ir, Nb, Ta.

V, Ti, Pt, Pd, In2O3, 5n02゜ITO
(I n203 + 5n02), etc., or if it is a synthetic resin film such as polyester film, NiCr, Ajl, Ag, Pd
, Zn, Ni.

Au, Cr, Mo, Ir, Nb, Ta, V.

The surface is treated with a metal such as Ti or Pt by vacuum evaporation, electron beam evaporation, sputtering, etc., or laminated with the metal to make the surface conductive. The shape of the base body can be any shape such as cylindrical, belt-like, plate-like, etc.
Its shape is determined as desired.

In addition to these, semiconductor substrates such as Si, Ge, GaAs, SO3, or the above-mentioned substrates on which other functional films are already formed can also be used.

The compound (A), the compound (B), and the active species may be introduced into the film forming space (A) through a transport pipe connected to the film forming space (A); Alternatively, the transport pipe may be installed in the film forming space (A) and extended to near the film forming surface of the substrate, and the tip may be introduced with a nozzle shape, or the transport pipe may be doubled. one side with the inner tube,
The other may be transported into the film forming space (A) using the outer pipe, for example, the active species may be transported using the inner pipe, and the compound (A) and the compound (B) may be transported using the outer pipe.

In addition, two nozzles connected to the transport pipe are prepared, and the tips of the two nozzles are placed near the surface of the substrate already installed in the film forming space (A). Compound (A) and compound (B) are discharged from the respective nozzles.
) and the active species may be introduced in a mixed manner. In this case, it is possible to selectively form a functional film on the substrate, which is convenient because patterning can be performed simultaneously with film formation.

In the present invention, the transport space (B) into the transport space (A)
The position of the opening of the transport space (A) is preferably 0.1 mm to 200 mm from the position of the opening of the transport space (A) to the film forming space.
is suitable, more preferably 1 mm - 100 m
It is desirable to set it to m.

Next, the present invention will be explained by citing typical examples of semiconductor members formed by the deposited film manufacturing method of the present invention.

FIG. 1 is a diagram for explaining an example of the configuration of a typical semiconductor member obtained by the present invention.

A semiconductor member 100 shown in FIG. 1 has a layered structure consisting of a semiconductor layer 102 and a gap-type electrode 103 on a support lot for a semiconductor member. In the following description, a case will be described in which the semiconductor layer 102 is formed by the method of the present invention.

The support 101 needs to be electrically insulating. The semiconductor layer 102 is formed by the method of the present invention so as to have semiconductor characteristics that allow it to fully function as a semiconductor member.

That is, the formation of the semiconductor layer 102 first begins with the activation space (A).
Then, a raw material gas for generating active species such as H2 is introduced, and activated species such as hydrogen radicals are generated by the action of a predetermined activation energy, and introduced into the film forming space via the transport space (A).

On the other hand, for example, (CH3)2. Ga.

Compound (A) that is a raw material for semiconductor forming materials such as AsH3
and compound (B) are mixed with the active species through the transport space (B) downstream of the opening position to cause chemical interaction.

A mixed gas consisting of the compound (A), the compound (B), and the active species is introduced into the film forming space and is formed on the substrate 101 disposed in the film forming space.

Example 1 Using the apparatus shown in FIG. 2, a semiconductor layer was fabricated on a flat substrate by the following operations.

In Fig. 2, 201 is a film forming chamber (A), 202 is an activation chamber (B), 203 and 204 are walls for introducing activation energy and releasing raw material gas for active species lfj, and 205 is a deposited film forming wall. 206 is a microwave power source as an activation energy source; 207 is a glass substrate for forming a deposited film; 208 is a heater for heating the glass substrate;
209 is the electric wire for the heater, 210 is the substrate holder, 2
11 is a gas introduction pipe for compound (A) and compound (B), 212 is a pipe for introduction of raw material 1 gas which becomes active species, and 213 is a pipe for introducing gas from the activation chamber (B) 202 to the film forming chamber (A).
This is a nozzle for introducing a mixed gas of active species, compound (A), and compound (B) into 201.

In this embodiment, the tip of the raw material gas introduction pipe 205 was set at a distance of about 5 cm from the nozzle 213.

A glass substrate 207 is placed in the film forming chamber (A) 201, an antagonism valve (not shown) is opened, and the film forming chamber (A) and the activation chamber (B) are opened.
) was brought to a vacuum of about 1 O-5 torr. Next, the temperature of the glass substrate was maintained at about 300° C. using a heater 208. Next, 50 SCCM of H2 gas is introduced into the activation chamber (B) 202 through the gas introduction pipe 202 as a raw material gas for generating active species.
It was introduced through 2. Separately, in the activation chamber (B) 202, 1Om mol/mi of (c H3)'2Ga bubbled with He gas was used as a raw material gas for forming a semiconductor layer.
In addition, AsH3 gas was added at a ratio of 10 mmol/m
Each was introduced at a rate of in. After the flow rate stabilizes, adjust the exhaust valve to reduce the internal pressure of the film forming chamber (A) to 0.002 Too.
It was set as r. After the internal pressure becomes constant, turn on the microwave power supply 20
6 was operated, and 280 W of discharge energy was input into the activation chamber (B) 202.

This state was maintained for 1.5 hours, and a GaAs film having a thickness of about 1.2 mm was deposited on the glass substrate 207 in the film forming chamber (A) 201. A comb-shaped AM with a gap length of 2.5 cm and a cap spacing of 0.2 mm was used in the GaAs film prepared in this way.
An electrode was formed.

When the film properties of the GaAs film of the above sample were evaluated, it was confirmed that the film had no unevenness in film thickness and was of good quality with almost no dependence on semiconductor properties depending on location.

Example 2 In Example 1, the raw material gases shown in Table 1 were used instead of (CH3)2Ga and AsH3 for compound (A) and compound (B).
), and the introduced amount was 1 mm/m t.
Example 1 except that n was set and the conditions listed in Table 1 were used.
When the film was formed in substantially the same manner as above, the thin film shown in Table 1 was formed. When these thin films were evaluated for electrical and optical film characteristics, it was confirmed that they were all films with uniform thickness, high quality, and excellent film characteristics.

Table 1 Example 3 In Example 1, R installed around the nozzle 213
F discharge device (not shown) 3W at a high frequency of 13.56MHz
A plasma atmosphere was created in the nozzle 213 by applying electric power. In this case, the base 207 was placed at a position 1 cm downstream of the plasma atmosphere so as not to come into direct contact with the plasma atmosphere. G of about i, aJL pressure 1.5 hours after the start of film formation
An aAs film was formed. The substrate temperature at this time was maintained at 250°C. Except for the above, the same procedure as in Example 1 was carried out.

When the sample provided with this GaAs film was evaluated in the same manner as in Example 1, it was confirmed that it exhibited good device characteristics.

Furthermore, the A-patterned film did not peel off from the substrate and was mechanically excellent.

〔Effect of the invention〕

According to the deposited film forming method of the present invention, the desired electrical, optical, photoconductive, and mechanical properties of the formed film are improved, and the reproducibility in film formation is improved, resulting in improved film formation. It is possible to improve the quality and make the film quality uniform, and it is also advantageous for increasing the area of the film, and it is possible to easily achieve improvements in the productivity of the film and mass production.

Further, since it is possible to form a film at a low temperature, the film can be formed even on a substrate with poor heat resistance, and the process can be shortened by low-temperature treatment.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram showing a layered structure for explaining one embodiment of a semiconductor member produced using the method of the present invention. FIG. 2 is a schematic explanatory diagram showing an example of an apparatus for implementing the manufacturing method of the present invention. 201---1 film formation chamber (A), 202---1 activation chamber (B), 203.204---1 activation energy introduction wall and activated species raw material gas discharge wall, 205---- Gas release pipe, 206---Microwave power source, 207---Glass substrate, 208----1 heating heater, 209-1--heater electric wire, 210----1 substrate holder, 2 t t -----Gas introduction pipe, 212---Gas introduction pipe, 213---Nozzle.

Claims (7)

[Claims] (1) Compound (A) and compound (B) represented by the following general formulas (A) and (B), respectively, which serve as raw materials for forming a functional deposited film, and these compounds (A) and compounds (B
) When introducing an active species that chemically reacts with at least one of , a function characterized in that the film is introduced into the film-forming space through a transport space (B) provided in the transport space (A) and communicating with the film-forming space, and is formed by chemically reacting them. Deposited film. R_nM_m------------(A)A_
aB_b---------------(B) However, m
is a positive integer equal to or an integral multiple of the valence of R, n is a positive integer equal to or an integral multiple of the valence of M, M is an element belonging to Group III of the periodic table, R is hydrogen (H ), halogen (X), and hydrocarbon group, respectively. a is a positive integer equal to or an integral multiple of the valence of B, b is a positive integer equal to or an integral multiple of the valence of A, A is an element belonging to Group V of the periodic table, B is hydrogen ( H
), halogen (X), and hydrocarbon group, respectively. (2) Compound (A) and compound (B) represented by the following general formulas (A) and (B), respectively, which serve as raw materials used for forming a functional deposited film, and these compounds (A ) and compound (B) and an active species that chemically reacts with at least one of them is introduced into a film forming space to form a functional deposited film on a substrate disposed in the film forming space. In the production method, the active species is transported to the compound (A) and the compound (B) through a transport space (A) that communicates downstream with the film forming space.
) is a method for producing a functional deposited film, characterized in that the films are introduced into the film forming spaces through transport spaces (B) provided in the transport spaces (A) and communicating with the film forming spaces. R_nM_m------------(A)A_
aB_b---------------(B) However, m
is a positive integer equal to or an integral multiple of the valence of R, n is a positive integer equal to or an integral multiple of the valence of M, M is an element belonging to Group III of the periodic table, R is hydrogen (H) , halogen (X), and a hydrocarbon group, respectively. a is a positive integer equal to or an integral multiple of the valence of B, b is a positive integer equal to or an integral multiple of the valence of A, A is an element belonging to Group V of the periodic table,
B represents hydrogen (H), halogen (X), or a hydrocarbon group, respectively. (3) The method for producing a functional deposited film according to claim 2, wherein the activated species are generated in an activation space provided upstream of the transport space (A). (4) The method for producing a functional deposited film according to claim 2, wherein the transport space (A) also serves as an activation space. (5) The functional deposited film according to claim 2, wherein at least one of the compound (A) and the compound (B) is excited in advance in an excitation space provided upstream of the transport space (B). manufacturing method. (6) The method for producing a functional deposited film according to claim 2, wherein the transport space (B) also serves as an excitation space. (7) The transport space (B) contains the compound (A) and the compound (
B) A method for producing a functional deposited film according to claim 2, which is divided into: