JPS62145724A - Functional deposited film and manufacture of the same - Google Patents

Abstract

PURPOSE:To eliminate influence of contaminants from the inner wall of a film forming space and residual gas remaining in the film forming space and improve the film quality and make the film properties uniform by separating a film forming space and an activation space. CONSTITUTION:Material gas for producing activation species, such as H2 gas, is introduced into an activation shape 202 and the activation species are pro duced by the application of a predetermined activation energy and introduced into a film forming space 201. On the other hand, a compound A which is to be row material of electrodes is supplied through a transfer space 205 and mixed with the above mentioned activation species in the downstream side of the open outlet of the transfer space 205 and creates mutual chemical reac tion. The mixed gas composed of the compound A and the activation species is introduced into the film forming space 201 and electrodes 103 are formed on the photoconductive layer 102 of a substrate 207 provided in the film forming space 201 beforehand. The compound A is expressed by a general formula RnMm (wherein M denotes an element belonging to II group, III group, V group, VI group or IV group and R denotes a hydrocarbon radical) for instance BeMe2, MgMe2, Al2Me6, BeEt2, MgEt2, Al2Et6 and so forth.

Description

[Detailed Description of the Invention] <Field of Industrial Application> The present invention relates to a functional film, particularly a so-called non-single crystalline functional deposited film that is amorphous to polycrystalline and is useful for applications such as semiconductor devices. and its manufacturing method.

<Prior art> For forming the deposit Ill, vacuum evaporation method, plasma CVD method, thermal CVD method, photo CVD method 1 reactive sputtering method,
Ion blating methods and the like have been attempted, and generally, plasma CVD methods are widely used and commercialized.

Since the deposited films obtained by these deposited film formation methods are required to be applied to electronic devices that require higher functionality, Hyakunen et al. In terms of usage environment characteristics, productivity and mass production including uniformity and reproducibility, the overall reaction process in forming the deposited film is considerably more complex than the conventional so-called thermal CVD method. However, the reaction mechanism is still largely unknown. In addition, there are many formation parameters for the deposited film (for example, substrate temperature, flow M and ratio of introduced gas, pressure during formation, high frequency power, structure of electrode structure 1 reaction vessel, pumping speed, plasma generation method, etc.). Due to the combination of many parameters, the plasma sometimes becomes unstable, which often has a significant negative effect on the deposited film. Moreover,
The reality is that parameters unique to each device must be selected for each device, making it difficult to generalize manufacturing conditions.

Among these, the plasma CVD method is currently considered to be the best method to form an amorphous silicon film, since it can produce electrical and optical properties that fully satisfy various uses. .

According to Hyakunen et al., depending on the application of the deposited film, it is necessary to fully satisfy the requirements of large area, uniformity of film thickness, and uniformity of film quality, and mass production with reproducibility.
Forming a deposited film by the method requires a large amount of equipment investment for mass production equipment, the control items for mass production are complicated, the control tolerance is narrow, and the adjustment of the equipment is delicate. These have been pointed out as problems that should be improved in the future.

Furthermore, depending on the type of deposited film, the plasma CVD method is not necessarily suitable, and in addition, the effect of plasma damage on the film, which is a drawback of the plasma CVD method, may affect the required film properties and prevent it from fulfilling the desired function. Examples include becoming. Particularly in the production of deposited films for highly functional electronic devices, the effects of plasma damage mentioned above directly appear on the film properties and must be avoided as much as possible.

On the other hand, the conventional technique using the normal CVD method requires high temperatures and has not been able to provide a deposited film with characteristics that are necessarily satisfactory at a commercial level.

This is a concern when creating functional deposited films.

(-As mentioned above, in the formation of functional films, it is desirable to develop a formation method that can produce T-products with a device that has practical characteristics such as uniformity, maleness, and low cost.) has been done.

Purpose of the Invention The present invention aims to eliminate the deficiencies of the above-mentioned conventional deposited film forming methods, particularly the plasma CVD method, and at the same time provide a novel method for forming 11 layers of deposits that does not rely on conventional forming methods. be.

The purpose of the present invention is to be able to easily control the characteristics of a functional membrane;
A deposited film and its formation that can simplify the management of film formation conditions and easily mass-produce films while maintaining at least the characteristics of a high-quality film obtained by conventional methods and improving the deposition rate. It is to offer 1M of the law.

Structure> The functional deposited film of the present invention comprises a compound (A) represented by the following general formula (A), which is a raw material for forming the functional deposited film, and an active species that chemically reacts with the compound (A). When introducing the compound (A) into the film forming space, the active species passes through a transport space (A) communicating with the film forming space, and the compound (A) is provided in the transport space (A) and communicating with the film forming space. A compound (A) represented by the following general formula (A), which becomes a raw material used for forming a laminated layer, is introduced into the film-forming space through the transport space (B) and chemically reacted. )
and an active species that chemically reacts with the compound (A) are introduced into a film-forming space to form a functional deposited film on a substrate disposed within the film-forming space. In this case, the active species is transported to a transport space (
A), the compound (A) is transferred to the transport space (A)
They are each introduced into the film forming space through a transport space (B) provided therein and communicating with the film forming space.

RnMm---------(A) However, m is a positive integer equal to the valence of R or an integral multiple thereof, n is a positive integer equal to the valence of M or an integral multiple thereof, M
indicates an element belonging to Group II from the second period onwards, an element belonging to Groups ■, V, and Group ■ from the third period onwards, or an element belonging to Group ■ from the fourth period of the periodic table. . R represents a hydrocarbon group.

<Specific description of the invention> In the present invention, active species are transported through the transport space (A),
Further, the compound (A) is introduced into each film forming space through the transport space (B'), but the transport space (A) of the transport space (B) is
) The residence time of the compound (A) in the transport space (A) can be set appropriately by varying the opening position within the transport space (A). In this case, the transport space for compound (A) (
The transport speed in B) can also be selected as one of the control parameters for controlling the residence time.

In the present invention, the transportation space (A) and the transportation space (B
) is open to the film forming space, where active species or compounds (
When A) is to be excited as necessary, the method is determined as appropriate depending on the lifetime of the compound (A) in the excited state.

In the case of the present invention, while the compound (A) is generally transported in its ground state to the film forming space, the active species used are often relatively short-lived.
) is preferably closer to the film forming space.

The opening of the transport space (A) to the film forming space and the transport space (
It is desirable that the opening of B) into the transport space (A) is shaped like a nozzle or an orifice. In particular, in the case of a nozzle-shaped nozzle, by positioning it near the film-forming surface of the substrate arranged in the film-forming space of the nozzle opening, the film-forming efficiency and effective raw material consumption efficiency can be significantly increased. I can do it.

In the present invention, active species are generated in an activation space that communicates with the transport space (A) upstream thereof, and compounds (A) are generated in an activated space that communicates with the transport space (B) upstream thereof, as necessary. Although excited in these spaces, the present invention is not limited to these. For example, the transport space (A) can also be used as an activation space, and the transport space (B) can also be used as an excitation space.

In particular, when both transport spaces are used as activation space and excitation space, respectively, the same means can be used as activation means and excitation means without providing them separately.

For example, by making the transport space (A) and the transport space (B) have a double glass tube structure, and providing an RF plasma device or a microwave plasma device around the outer glass tube, the transport space (A) and the transport space (B) can be placed at the same position in the transport direction. Active species and excited state compounds (
A) can be generated simultaneously.

In the present invention, transportation space (A) and transportation space (B) =
It is preferable that the opening portion 1 is located inside the film forming space.

In the present invention, a transportation space (A);
By providing not only one but a plurality of double space structures in the film forming apparatus, each double space structure is configured to transport active species and compounds ( By changing the type of A), deposited films having different characteristics can be formed on each of the substrates disposed in the film forming space.

Furthermore, according to the method of the present invention, conventional plasma CVD
Unlike the conventional method, the deposition space, the activation space, and the excitation space provided as necessary are separated, so the influence of contaminants from the inner walls of the deposition space and residual gas remaining in the deposition space is reduced. It has the characteristic of being able to virtually eliminate the

In addition, the "active species" in the invention refers to species that chemically interact with the compound (A) to give energy to the compound (A), or chemically react with the compound (A). , refers to a substance that plays the role of bringing the compound (A) into a state where it can form a deposited film. Therefore, the active species may include constituent elements constituting the deposited film to be formed, or may not include such constituent elements.

The compound (A) represented by the general formula (A) used in the present invention may cause chemical collisions with the active species in the space where the substrate on which the film is to be formed exists. It is more desirable to select a material that causes a reaction and spontaneously generates a chemical species that contributes to the formation of the deposited film formed on the substrate. However, in the case where the active species is inert or does not have such activity in its normal state of existence, the compound (A) has the general formula (
A) It is necessary to apply excitation energy strong enough to not completely dissociate M in the compound (A) before or during film formation to bring the compound (A) into an excited state in which it can chemically react with the active species, and , a compound that can be brought into such an excited state is employed as one type of compound (A) used in the method of the present invention.

In the present invention, when the compound (A) is in the above-mentioned excited state, the term "excited species (A)" will be used hereinafter.
)”.

In the present invention, 5, when the compound (A) is excited in advance as necessary to generate the compound (A) in the excited state, the compound in the excited state is introduced into the film forming space from the transport space (B). It is desirable that (A) has a long life, preferably 0.01 seconds or more, more preferably 0.1 seconds or more, and optimally 1 second or more, but in any case, it is selected according to desire. The constituent elements of this compound (A) constitute the main components constituting the deposited film formed in the film forming space.

When forming a deposited film in the film-forming space, the active species is simultaneously introduced into the film-forming space from the transport space (B), and is chemically combined with the compound (A) containing the constituent elements that will be the main constituents of the deposited film to be formed. interact with each other. As a result, a desired deposited film can be easily formed on a desired substrate. According to the method of the present invention, the deposited film that is formed without generating plasma in the film forming space is not adversely affected by etching action or other adverse effects such as abnormal discharge action. Further, according to the present invention, a more stable CVD method can be achieved by arbitrarily controlling the atmospheric temperature in the film forming space and the substrate temperature as desired. One of the differences between the method of the present invention and the conventional CVD method is that active species activated in advance in an "activation space (C)" different from the film forming space are used. As a result, the deposition rate can be dramatically increased compared to conventional CVD methods, and at the same time, a high-quality film can be obtained.In addition, the substrate temperature during the formation of the deposited film can also be lowered. This makes it possible to provide deposited films with stable film quality in large quantities industrially and at low cost.

In the present invention, the active species generated in the activation space (A) are not only generated by energy such as electric discharge, light, heat, etc., or by a combination thereof, but also by contact with or addition of a catalyst, etc. may be done.

In the present invention, the compound represented by the general formula (A) (
A) The following compounds can be mentioned as compounds that can be effectively used as RnMm.

That is, as M, elements belonging to Group II from the second period onwards of the periodic table, elements belonging to Groups ■, Groups ■, and Group ■ from the $3 period onwards of the periodic table, or elements belonging to Group II from the fourth period onwards. ■Elements belonging to group Specifically, Be, Mg, Ca, Sr, Ba, Zn
, Cd.

Hg, AM, Ga, In, Tu, Ge, Sn.

Compounds containing Pb, P, As, Sb, Bi, S, Se, Te, etc. can be mentioned.

Among these elements, it is desirable to select a compound having an element belonging to group (b) of each group.

R is a monovalent, divalent, or trivalent hydrocarbon group derived from a linear or side chain saturated hydrocarbon or unsaturated hydrocarbon, or a saturated or unsaturated monocyclic or polyvalent hydrocarbon group. Compounds having monovalent, divalent and trivalent hydrocarbon groups derived from cyclic hydrocarbons can be mentioned.

As an unsaturated hydrocarbon group, the carbon-carbon bond is not only a single type of bond, but also a double bond.

Those having at least two types of double bonds and triple bonds can also be effectively adopted as long as they are different from each other in achieving the object of the present invention.

Further, in the case of an unsaturated hydrocarbon group having a plurality of double bonds, it does not matter whether the double bonds are non-integrated double bonds or integrated double bonds.

Examples of acyclic hydrocarbon groups include alkyl groups, alkenyl groups,
Alkynyl group, alkylidene group.

Preferable examples include alkenylidene groups, alkynylidene groups, argyridine groups, alkenylidine groups, and 'flukynylidine groups. In particular, the number of carbon atoms is preferably 1 to 10, more preferably 1 to 7, and most preferably carbon Numbers 1 to 5 are desirable.

In the present invention, as the compound (A) to be effectively used, those listed above are selected so as to be gaseous in the standard state or easily vaporized in the usage environment. In selecting R and M, a combination of R and M is selected as desired.

In the present invention, specific compounds that can be effectively used as compound (A) include BeMe 2 , MgMe 2 , AJ12Me 6
.

GaMe 3 , InMe 3 , TIMe
3.

GeMe4, SnMe4, PbMe4
.

M e 3 P, M e 3 A
s, M e 3 S b .

M e 3 B i , M e 2 S
, M e 2 S e .

Me2Te, BeEt2. MgEt2.

AM2Et6. GeEt3. InEt3゜TuEt
3, GeEt4.5nEt4.

PbEt4, Et3P, Et3As.

Et3Sb, Et　　3Bj, Et2S.

Examples include Et 2Se and Et 2Te. In the above, Me is a methyl group, and Et is a shorter one in consideration of its reactivity with the chemical (A), but a longer one is better in terms of ease of handling during film formation and transport to the film formation space. is good. Furthermore, the lifetime of the active species also depends on the internal pressure of the film forming space.

Therefore, the active species to be used are selected and determined in such a way that a functional film having the desired properties can be effectively obtained, taking production efficiency into account. Active species having a long lifespan are appropriately selected and used.

The active species used in the present invention has a lifespan of:
The active species having a lifespan appropriately selected in view of the above points is appropriately selected as desired from within the compatible range of chemical affinity with the compound (A) specifically used, but preferably, As for its lifespan, it is desirable that the lifespan be within the environment compatible with the present invention.

The active species used in the present invention is a so-called initiator (initiator) when a chemical reaction with compound (A) occurs in a chain reaction.
Since it is sufficient to minimize the function as a teater, the amount introduced into the film-forming space should be such that a chemical reaction can occur efficiently in a chain reaction.

The active species used in the present invention are introduced into the film forming space (A) at the same time as forming the deposited film in the film forming space (A),
The compound (A) containing the constituent elements that will be the main constituents of the deposited film to be formed or/and the excited species (A) of the compound (A)
) interacts chemically with As a result, a laminated layer having desired functionality can be easily formed on a desired substrate.

According to the present invention, a more stable CVD method can be achieved by arbitrarily controlling the ambient temperature and substrate temperature of the film forming space (A) as desired.

In the present invention, the raw material introduced into the activation space (C) to generate active species is preferably a gaseous or easily vaporizable substance, and may include a substance that generates hydrogen radicals. Success, specifically H2, D2. Examples include HD, and rare gases such as He and Ar may also be used.

Activated species are generated by adding activation energy such as heat, light, discharge, etc. to the above-described energy in the activation space (C). This active species is introduced into the film forming space (A). At this time, it is necessary that the lifetime of the active species is preferably lXl0-4 seconds or more, and having such a lifetime promotes deposition efficiency and deposition rate -Fi, and introduces the active species into the film forming space (A). increases the efficiency of the chemical reaction with compound (A).

Examples of the activation energy that causes an activation effect on the active species generating substance in the activation space (C) include thermal energy such as resistance heating, infrared heating, laser light, mercury lamp light, halogen lab light, etc. Examples include light energy, microwave, RF, low frequency, electrical energy using discharge such as DC, etc., and these activation energies can be used alone to generate active species in the active space (C). They may be allowed to act, or two or more types may be used in combination. The compound (A) and active species introduced into the film forming space (A) are those that can cause a chemical reaction by mutual collision at the molecular level and deposit a functional film on the desired substrate. Each of the compounds listed above can be selected, but depending on the selection of the compound (A) and the active species, the chemical reaction may be poor, or the chemical reaction may be carried out more effectively. , in order to efficiently generate a deposited film on a substrate, the film forming space (A
), there is no problem in using the reaction promoting energy acting on the compound (A) or/and the active species, such as the activation energy used in the above-mentioned activation space (C). Alternatively, before introducing the compound (A) into the film forming space (A), the compound (A) is added to another activation space (D).
Excitation energy may be applied to bring A) into the above-mentioned excited state.

Compound (A) introduced into the film forming space (A) in the present invention
The ratio between the amount of the active species introduced from the activation space (C) can be determined as desired depending on the deposition conditions, the types of the compound (A) and the active species, the desired characteristics of functional film formation, etc. Preferably 1000:l to 1:10 (introduction flow rate ratio)
is suitable, and more preferably 500:1 to 1:5.

When the active species does not cause a chain chemical reaction with the compound (A), the ratio of the amount introduced in 1- is preferably 10:1 to 10:1.
The ratio is preferably 1:10, more preferably 4:1 to 2:3.

The internal pressure of the film forming space (A) during film formation is appropriately determined according to the selected types of compound (A) and active species, deposition conditions, etc., but is preferably 1×10 −2 to 5×
103Pa, more preferably 5XlO-2 to lX103
Pa, preferably 1X10-1 to 5X102 Pa. In addition, if it is necessary to heat the substrate during film formation, the substrate temperature is preferably 30 to 45
0°C, more preferably 50-300°C.

The optimum number is preferably 50 to 25,000.

In the present invention, the substrate used for film formation is:
It may be electrically conductive or electrically insulating. As the conductive substrate, for example, NiCr.

Stainless steel, AM, Cr, Mo, Au, Ir.

Examples include metals such as Nb, Ta, V, Ti, Pt, and Pd, and alloys thereof.

Examples of the electrically insulating substrate include films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, heptarose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, and polyamide;
glass.

Ceramic, paper, etc. are commonly used. Preferably, at least one surface of these electrically insulating substrates is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, its surface is NiCr.

AM, Cr, Mo, Au, Ir, Nb, Ta.

V, Ti, Pt, Pd, In2O3, 5n02゜ITO
(I n203+5n02), etc., or if it is a synthetic resin film such as polyester film, NiCr, AM, Ag, Pd,
Zn, Ni.

Au, Cr, Mo, Ir, Nb, Ta, V.

The surface is treated with a metal such as Tj or Pt by vacuum evaporation, electron beam evaporation, sputtering, etc., or laminated with the metal to make the surface conductive. The shape of the base body can be any shape such as cylindrical, belt-like, plate-like, etc.
Its shape is determined as desired.

In addition to these, semiconductor substrates such as Si, Ge, GaAs, SO3, or the above-mentioned substrates on which other functional films are already formed can also be used.

The compound (A) and active species may be introduced into the film forming space (A) through a transport pipe connected to the film forming space (A), or through a transport pipe connected to the film forming space (A). The transport pipe may be extended to near the film forming surface of the substrate installed in (A), and the tip may be introduced with a nozzle shape,
The transport tubes are doubled, with the inner tube carrying one side and the outer tube carrying the other side. For example, the inner tube carries the active species, and the outer tube carries the compound (A).
) may be transported and introduced into the film forming space (A).

In addition, two wooden nozzles connected to the transport pipe are prepared, and the tips of the two wooden nozzles are placed near the surface of the substrate already installed in the film forming space (A). In this step, the compound (A) discharged from each nozzle and the active species may be mixed and introduced. In this case, it is possible to selectively form a functional film on the substrate, which is convenient because patterning can be performed simultaneously with film formation.

In the present invention, the transport space (B) into the transport space (A)
The position of the opening of the transport space (A) to the film forming space is preferably 0.1 mm to 200 mm, more preferably 1 mm to 100 mm.

Next, the present invention will be explained by citing typical examples of photoconductive members formed by the deposited film manufacturing method of the present invention.

FIG. 1 is a diagram for explaining an example of the configuration of a typical photoconductive member obtained by the present invention.

A photoconductive member 100 shown in FIG. 1 has a layered structure consisting of a photoconductive layer 102 and a gap-type electrode 103 on the bottom of a support for a photoconductive member. In the following description, a case will be described in which the electrode 103 is created by the method of the present invention.

The support lot needs to be electrically insulating. The photoconductive layer 102 is made of, for example, silicon atoms, contains halogen (X), and hydrogen atoms as necessary, so as to have photoconductive properties that allow it to fully function as a photoconductive member. It is composed of amorphous silicon 5-5iX (H) containing (H).

To form the electrode 103, first, a raw material gas for generating active species such as 82 is introduced into the activation space (A), active species are generated by the action of a predetermined activation energy, and then the material gas is introduced into the transport space (A).
is introduced into the film-forming space through.

On the other hand, for example, (CH3) 3A sentence.

The compound (A), which is a raw material for the electrode material such as (C2H5)3In, is mixed with the active species through the transport space (B) on the downstream side of the open opening position to cause chemical interaction.

A mixed gas consisting of the compound (A) and active species is introduced into the film forming space, and is applied to the photoconductive layer 102 of the substrate on which the photoconductive layer 102 has been formed in advance and which is placed in the film forming space. Electrode 103 is formed.

Example 1 Using the apparatus shown in FIG. 2, the photoconductive film of a member on which a photoconductive film made of A-Si:H was previously formed on a flat plate-shaped substrate was prepared by the following operations. An electrode was made on -.

In Fig. 2, 201 is a film forming chamber (A), an exit wall, 20
5 is a gas discharge pipe for compound (A) for forming a deposited film; 2
06 is a microwave power source which is an activation energy source, 20
7 is a glass substrate for forming a deposited film [in this example, an A-3i:H photoconductive layer has already been formed (not shown)], 208 is a heater for heating the glass substrate, and 209 is for a heater. 210 is a substrate holder, 211 is a gas introduction pipe for the compound (A), and 213 is a gas introduction pipe for the active species and the compound (Nll) from the activation chamber (B) 202 to the film forming chamber (A) 201. This is an introduction nozzle.

In this embodiment, the tip of the raw material gas introduction pipe 205 was set at a distance of about 5 cm from the nozzle 213.

A glass substrate 207 on which a photoconductive layer has been formed in advance is placed in the film forming chamber (A) 201, and an exhaust valve (not shown) is opened.
The film forming chamber (A) and activation chamber (B) are heated to approximately 1O-5 torr.
The vacuum level was set to .

Next, the temperature of the glass substrate is raised to about 20°C by heating heater 208.
It was kept at 0°C. Next, 50 SCCM of H2 gas was introduced into the activation chamber (B) 202 through the gas introduction pipe 212 as a raw material gas for generating active species. Separate activation chamber (B
) 202 as a raw material gas for electrode formation, (CH3)aA statement bubbled with He gas was added at 1Ommol/m
It was introduced at a rate of in. After the flow rate became stable, the exhaust valve was adjusted to bring the internal pressure of the film forming chamber (A) to 0.002 Torr. After the internal pressure became constant, the microwave power source 206 was operated, and 200 W of discharge energy was input into the activation chamber (B) 202.

This state was maintained for 20 minutes to deposit an An film with a thickness of approximately 300 nm on the photoconductive layer of the glass substrate 207 in the film forming chamber (A) 201. The An film created in this way was patterned with a gap length of 2.5 cm and a cap spacing of 0.2 cm.
A comb-shaped Al main electrode of mm was formed. When a voltage was applied between the electrodes of the sample thus prepared and the flowing current was measured, the ratio of the current during light irradiation and during dark was not different.

Example 2 In Example 1, the raw material gases shown in Table 1 were used as compounds (A) instead of (CH3) 3AJ1, and the amount introduced was 1 mmol/min, and the amounts shown in Table 1 were The thin films shown in Table 1 were formed in substantially the same manner as in Example 1 except for using the conditions described in 1 and using a glass substrate on which no photoconductive layer was previously formed.

When these thin films were evaluated for electrical and optical film characteristics, it was confirmed that they were all films with uniform thickness, high quality, and excellent film characteristics.

Table 1 Example 3 In Example 1, an RF discharge device (not shown) installed around the nozzle 213 discharged 3.
Power of W was applied to form a plasma atmosphere inside the nozzle 213. In this case, the base 207 was placed at a position 1 cm downstream of the plasma atmosphere so as not to directly touch the plasma atmosphere. Thirty minutes after the start of film formation, an A film with a pressure of about 1,000 atmospheres was formed. The substrate temperature at this time was maintained at 100°C. Except for the above, the same procedure as in Example 1 was carried out.

When the sample provided with this AM film was evaluated in the same manner as in Example 1, it was confirmed that it exhibited good device characteristics.

Furthermore, the A pattern film was mechanically excellent without peeling from the photoconductive layer.

〔Effect of the invention〕

According to the deposited film forming method of the present invention, the desired electrical, optical, photoconductive, and mechanical properties of the formed film are improved, and the reproducibility in film formation is improved. It is possible to improve the film quality and make the film quality uniform, and it is also advantageous for increasing the area of the film, and it is possible to easily achieve improvement in film productivity and mass production.

Further, since it is possible to form a film at a low temperature, the film can be formed even on a substrate with poor heat resistance, and the process can be shortened by low-temperature treatment.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram showing a layer structure for explaining one embodiment of a photoconductive member produced using the method of the present invention. FIG. 2 is a schematic explanatory diagram showing an example of an apparatus for implementing the manufacturing method of the present invention. 201---1 film formation chamber (A), 202---1 activation chamber (B), 203.204---1 activation energy introduction wall and active species raw material gas discharge wall, 205-1--- Gas release pipe, 206---Microwave power source, 207---Glass substrate, 208----Heating heater, 209---Electric wire for heater, 210----Substrate boulder, 211- ---Gas introduction pipe, 212--m-gas introduction pipe, 213--m-nozzle.

Claims (6)

[Claims] (1) A compound (A) represented by the following general formula (A), which serves as a raw material for forming a functional deposited film, and an active species that chemically reacts with the compound (A) are introduced into the film formation space. At this time, the active species is transported through a transport space (A) communicating with the film forming space, and the compound (A) is transported through a transport space (A) provided within the transport space (A) and communicating with the film forming space.
A functional deposited film characterized in that it is formed by introducing each of the functional deposited films into the film forming space through B) and causing a chemical reaction between them. R_nM_m---(A) However, m is a positive integer equal to or an integral multiple of the valence of R, n is a positive integer equal to or an integral multiple of the valence of M, and M is the period. Indicates an element belonging to Group II from the second period onwards, an element belonging to Group III, V and VI from the third period onward, or an element belonging to Group IV from the fourth period of the Table of Laws. R represents a hydrocarbon group. (2) A compound (A) represented by the following general formula (A), which serves as a raw material used in the formation of a functional deposited film, and an active species that chemically reacts with the compound (A) are placed in the film formation space. By introducing
In the method for producing a functional deposited film, which forms a functional deposited film on a substrate disposed in the film-forming space, the active species is
Through a transport space (A) that communicates with the film forming space on the downstream side, the compound (A) is transferred to the compound (A) through a transport space (B) provided in the transport space (A) and communicating with the film forming space, respectively. A method for producing a functional deposited film characterized by introducing the film into a film forming space. R_nM_m---(A) However, m is a positive integer equal to or an integral multiple of the valence of R, n is a positive integer equal to or an integral multiple of the valence of M, and M is the period. Indicates an element belonging to Group II from the second period onwards, an element belonging to Group III, V and VI from the third period onwards, or an element belonging to Group IV from the fourth period of the Table of Laws. R represents a hydrocarbon group. (3) The method for producing a functional deposited film according to claim 2, wherein the activated species are generated in an activation space provided upstream of the transport space (A). (4) The method for producing a functional deposited film according to claim 2, wherein the transport space (A) also serves as an activation space. (5) The compound (A) is excited in advance in an excitation space provided upstream of the transport space (B).
The method for producing the functional deposited film described in Section 1. (6) The method for producing a functional deposited film according to claim 2, wherein the transport space (B) also serves as an excitation space.