JPS6174368A - semiconductor equipment - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device having a special configuration that allows bipolar transistor operation, and particularly to a semiconductor device suitable for high-output operation.

[Conventional technology]

A bipolar transistor as a circuit element of a semiconductor integrated circuit has a so-called lateral structure in which the emitter, base, and collector regions are arranged in a planar manner for the purpose of simplifying manufacturing and wiring patterns. However, this lateral structure bipolar transistor generally has a small current amplification factor β.

[Problem that the invention seeks to solve]

On the other hand, the present applicant previously proposed in Japanese Patent Application No. 58-224841 a semiconductor device which has a lateral structure and operates as a bipolar transistor with a large current amplification factor. As shown in FIGS. 4 and 5, this semiconductor device has, for example, a first region (2) serving as an n-type emitter region and a second region serving as a collector region on the main surface of a semi-insulating semiconductor substrate (1). A second region (3) and a p-type third region (4) are provided, and an emitter electrode (5), a collector electrode (6) and a base electrode ( 7). And the first and third areas (2)
and (4) by applying a forward bias voltage between
The genuine tag from the third region (4) is injected into the semi-insulating semiconductor (1) between the first and third regions (2) and (4) to form a virtual base region (8), and the 1 area □ (2)
The electrons injected from the virtual base region (8) reach the positively biased second region (3), and the n-p-
An n-type bipolar transistor operation is performed.

By the way, in such a semiconductor device, the first and second
In a configuration in which the and third regions 12), +31, and (4) are arranged in parallel to each other, a virtual space formed between the first region (2) and the third region (4) as shown in FIG. The base region (8) has the property of expanding outward from the edge of the planar pattern. As a result, the ineffective base current increases (the current tends to concentrate at the ends), which prevents it from passing through the west output operation, and when devices are miniaturized, the isolation between adjacent devices becomes incomplete. It had some problems, such as:

The present invention provides a semiconductor device having a special structure that allows such a bipolar transistor operation to be performed, and which improves the above-mentioned points.

[Means for solving problems]

The present invention provides a semi-insulating semiconductor (11) in which a first region (12) serving as an emitter region of one conductivity type and a second region (13) serving as a collector region are kept at a required distance. At the same time, these first and second territorial guns (12) and (13)
) is provided with a third region (14) of another conductivity type. Then, by applying a forward bias voltage between the third region (14) and the first region (12), the majority carriers are transferred from the third region (14) between the third region (14) and the first region (12). is implanted into a semi-insulating semiconductor region (18) to form a virtual base region (19) in this region (18) to operate as a bipolar transistor. In particular, in the present invention, the first region (12), the second region (13), and the third region (I4) are arranged and formed so as to concentrically surround them in a plan view.

[Effect]

By forming a virtual base region (19) in the semi-insulating semiconductor (11), majority carriers injected from the first region (12) are transferred to the second region through the virtual base region (19).
The region (13) is reached and bipolar transistor operation is performed.

At this time, the first, second and third areas (12),
Since (13) and (14) are formed so as to concentrically surround each other, the virtual base region (19) is confined within the element, and the base current and collector current flow uniformly.

For this reason, dli output operation can be obtained, and even if minute elements are configured, isolation between elements is perfect.

〔Example〕

An example of a semiconductor device according to the present invention will be described with reference to FIGS. 1 and 2. I that is semi-insulating, that is, has a substantially low current carrier concentration and exhibits a high resistance, e.g., 106 Ω or more.
A II-V compound semiconductor substrate, for example, GaAs, or a semiconductor 5 (11) is provided, and facing one plane (lla) of the substrate is a first layer with a high impurity concentration, which will become, for example, an n-type emitter region.
A second region (12) with a high impurity concentration that becomes an n-type collector region is formed surrounding the region (12) at a required distance.
3) is formed by, for example, an ion implantation method, a diffusion method, or the like. Then, these first and second areas (12) and (
I3) so as to surround the first area (12) between the two surfaces (
For example, a p-type third region (14) having a high impurity concentration is formed by ion implantation, diffusion, or the like, facing the region lla). namely, these first, second and third regions (12).

(13) and (I4) are formed in a so-called concentric circle shape centered on the first region (12). The third region @ (14) is formed at a shallower depth than the first and second regions (12) and (13). first, second and third regions (12);

(13) and (14) are respectively ohmically coated with emitter, collector and base electrodes (15, (I6) and (17). E, C and B are emitter, collector and base electrodes, respectively. Indicates terminal.

Then, a forward bias voltage is applied between the first and third regions (12) and (14), and the third and second regions (14) and (12
) Apply a reverse bias voltage between the In this way, the holes of majority carriers are transferred from the third region (14) to the first region (14).
2) and a high resistance region (lli) made of semi-insulating semiconductor Pi (11) between and under the third region (14)
to generate a virtual base area (19) here,
This promotes the injection of majority carrier electrons in the first region (12), which reach the second region (13) through the virtual base region (19), forming the n-p-n structure of the lateral structure.
This type of bipolar transistor operates.

In addition, in FIG. 2, the 11th third and second regions (12) face the -main surface of the semi-insulating semiconductor (11).

(14) and (13) were formed concentrically with each other,
As shown in FIG. Third and second areas (12)
.

(14) and (13) may be formed in a square or rectangular shape so as to surround each other concentrically.

Also, on the upper side are first, second and third regions (12).

(13) and (14) are used as the first region (
Although they are arranged concentrically so that the second region (12) is at the center, they can also be arranged concentrically so that the second region (13) serving as the collector region is at the center.

〔Effect of the invention〕

Although the semiconductor device according to the present invention described above has a lateral structure, it nevertheless has the advantage that its current amplification factor β can be increased. That is, since the base region, that is, the current path by the LIE carriers is substantially formed in the semi-insulating region (11) outside the third region (14) having a commercial impurity concentration, the injected carriers are The diffusion length is extremely long, and it is not easily affected by the high recombination rate of the semiconductor surface.Furthermore, the potential barrier of the semi-insulating region (11) is low and flat without flowing into the third region (14). When the current flows through a portion that is not easily affected by the collector voltage, it is possible to construct a semiconductor device that operates as a bipolar transistor with a high current amplification factor.

Further, especially when constructed from a compound semiconductor, it is possible to obtain a semiconductor device with even better high-speed operation.

Furthermore, since the substantial base region is formed in a semi-insulating semiconductor, this characteristic is less affected by variations in the depth, characteristics, etc. of the third region i&(14).
Therefore, a semiconductor device with stable and uniform characteristics can be easily manufactured.

Further, since it has a lateral structure, electrode extraction and wiring are easy, which is advantageous when constructing an integrated circuit.

Furthermore, since it is constructed as a semi-insulating semiconductor, there is the advantage that isolation between elements can be simplified when used in integrated circuits.

In the semiconductor device of the present invention, especially the first and second
and the third region (12), (13), and (14) are arranged concentrically and sequentially surrounding the base current, the collector current, and the virtual base region (19), for example, inside the second region (13). is confined within the element and becomes uniform within the element. Therefore, since the current flows uniformly, the element may be destroyed when operating at high current and high output.
A semiconductor device suitable for the ρ1 frequency can be obtained. Furthermore, even if the elements are miniaturized, the elements can be completely isolated, making it suitable for high-density integrated circuits.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of an example of the semiconductor device according to the present invention, FIG. 2 is a plan view of the same, and FIG. 3 is a plan view of another example of the semiconductor device of the present invention. FIG. 4 is a cross-sectional view of a semiconductor device used for explaining the present invention, and FIG. 5 is a plan view thereof. (1) is a semi-insulating semiconductor, (12), (13) and (14) are the eleventh second and third regions, and (19) is a virtual base region. Figure 1 Figure 2 113.1

Claims (1)

[Claims] A first region serving as an emitter region of one conductivity type and a second region serving as a collector region are arranged in a semi-insulating semiconductor with a required distance between them, and a conductivity type of another conductivity type is disposed between the first and second regions. Third
A forward bias voltage is applied between the third region and the first region to create a virtual base region between the third region and the first region by injecting majority carriers from the third region. A semiconductor device formed on the semi-insulating semiconductor to perform bipolar transistor operation, and comprising the first region, second region, and third region concentrically surrounding each other in sequence.