JPS6157907B2 - - Google Patents
Info
- Publication number
- JPS6157907B2 JPS6157907B2 JP13990682A JP13990682A JPS6157907B2 JP S6157907 B2 JPS6157907 B2 JP S6157907B2 JP 13990682 A JP13990682 A JP 13990682A JP 13990682 A JP13990682 A JP 13990682A JP S6157907 B2 JPS6157907 B2 JP S6157907B2
- Authority
- JP
- Japan
- Prior art keywords
- evaporation source
- crucible
- capsule
- evaporated
- evaporation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008020 evaporation Effects 0.000 claims description 46
- 238000001704 evaporation Methods 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 10
- 239000013307 optical fiber Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000002775 capsule Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241001071861 Lethrinus genivittatus Species 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明は新規な蒸発源、特に定量の蒸発物質を
収容したカプセル型蒸発源に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel evaporation source, particularly a capsule-type evaporation source containing a fixed amount of evaporation material.
従来公知の蒸発源は、被蒸発物質からなるフイ
ラメント又は被蒸発物質を収容したボートに通電
して被蒸発物質の温度を上昇させ、蒸着を行う構
造のものが多く使用されている。これら公知の蒸
発源はフイラメント部，通電部の複雑な絶縁構造
が必要であり、更にフイラメントの断線及び絶縁
不良等の不測の事故が多く、信頼性のある蒸発源
とは認められず、更に、１個の形状が大型であり
多数個の蒸発源を使用する必要がある場合には被
蒸着基板近くに配置できず、一定量の膜厚を形成
する際多量の蒸発物質を必要とする等の諸欠点が
ある。 Many conventionally known evaporation sources have a structure in which a filament made of a substance to be evaporated or a boat containing the substance to be evaporated is energized to raise the temperature of the substance to be evaporated, thereby performing evaporation. These known evaporation sources require a complicated insulation structure for the filament part and the current-carrying part, and there are many unexpected accidents such as filament breakage and poor insulation, so they are not recognized as reliable evaporation sources. If the shape of one evaporation source is large and it is necessary to use multiple evaporation sources, it may not be possible to place them near the substrate to be evaporated, and a large amount of evaporation material may be required to form a certain amount of film thickness. There are various drawbacks.
公知の蒸発源の前述の如き諸欠点を改良すべく
種々検討の結果、光フアイバー機構によるレーザ
ー光を利用する新規な構成のカプセル型蒸発源の
開発に成功したものであり、本発明は前記特許請
求の範囲各項に明記した如き構成からなるカプセ
ル型蒸発源を提供するものである。 As a result of various studies aimed at improving the above-mentioned drawbacks of known evaporation sources, we have succeeded in developing a capsule-type evaporation source with a new configuration that utilizes laser light with an optical fiber mechanism, and the present invention is disclosed in the above-mentioned patent. The object of the present invention is to provide a capsule-type evaporation source having the structure specified in each claim.
本発明の実施態様の数例を示す添付図面に基い
て更に詳細に説明する。 The invention will now be described in more detail with reference to the accompanying drawings, which show some examples of embodiments of the invention.
第１図は本発明カプセル型蒸発源の例を示す断
面図であり、１はレーザー光を吸収し又は透過し
得る材料からなるルツボである。尚、レーザー光
を吸収し得る材料としては炭素又黒鉛、透過し得
る材料としては石英等である。第１図Ａは黒鉛ル
ツボであり、例えばランサー（Lancer）レーザ
ー等の加熱により容易に破壊し得る材料からなる
トツプシール２により被蒸発物質３を封止してあ
る。第１図Ｂは石英ルツボであり、ルツボ頂部は
加熱又はルツボ加熱時に発生する内圧により容易
に破壊し得るように石英薄膜からなるトツプシー
ル１′として封止した態様を示す。 FIG. 1 is a sectional view showing an example of the capsule type evaporation source of the present invention, and 1 is a crucible made of a material that can absorb or transmit laser light. Note that materials that can absorb laser light include carbon or graphite, and materials that can transmit laser light include quartz. FIG. 1A shows a graphite crucible in which a substance to be evaporated 3 is sealed with a top seal 2 made of a material that can be easily destroyed by heating with a Lancer laser or the like. FIG. 1B shows a quartz crucible in which the top of the crucible is sealed as a top seal 1' made of a thin quartz film so that it can be easily destroyed by heating or internal pressure generated during heating of the crucible.
前記トツプシールは蒸発物を大気に触れさせな
いで清浄に保つため使用する。トツプシールによ
つて蒸発物は真空に保持されるかもしくは不活性
なNe，Arガス中に保持される。蒸発物を大気に
触れさせると、蒸発物の加熱蒸着中に放出ガスが
多くて蒸着した薄膜中に不純物が入り込む場合、
あるいは蒸発物が活性で容易に酸素と反応する場
合に有効である。このトツプシールは石英ルツボ
の場合には溶融して真空に封じ切る形で形成する
ことができる（第１図Ｂに図示）。黒鉛ルツボで
はトツプシールを不活性ガス中でルツボにネジ込
む蓋状とし、蓋の中央部を容易に破壊しうる薄膜
状とすることが有利である。更にこれらシールし
たルツボ全体を不活性ガス雰囲気の容器内に装
入、保管し、大気からの蒸発物質の汚染を更に低
減することが好ましい。これらトツプシールの材
質としては使用するルツボに用いられる材料と同
質であることが好ましい。 The top seal is used to keep the evaporated matter clean by preventing it from coming into contact with the atmosphere. The top seal keeps the evaporated material in a vacuum or in an inert Ne, Ar gas. When the evaporated material is exposed to the atmosphere, a large amount of gas is released during the heated vapor deposition of the evaporated material and impurities enter the deposited thin film.
Alternatively, it is effective when the vapor is active and easily reacts with oxygen. In the case of a quartz crucible, this top seal can be formed by melting it and sealing it in a vacuum (as shown in FIG. 1B). For graphite crucibles, it is advantageous for the top seal to be in the form of a lid that is screwed onto the crucible in an inert gas, with the central part of the lid being in the form of a thin film that can be easily broken. Furthermore, it is preferable that the entire sealed crucible be placed and stored in a container with an inert gas atmosphere to further reduce contamination by evaporated substances from the atmosphere. The material of these top seals is preferably the same as the material used for the crucible used.
本発明のカプセル型蒸発源は上記の如き構成か
らなつており、レーザー光による蒸発源としての
使用態様を第２図〜第６図に基いて説明する。 The capsule type evaporation source of the present invention has the above-mentioned configuration, and its usage as an evaporation source using laser light will be explained with reference to FIGS. 2 to 6.
第２図はレーザー光をルツボ１の側面から照射
する場合の断面略図である。被蒸発物質３を装入
し、トツプシール２で封止したルツボ１を、水冷
シユラウド４内に熱シールド５を介して保持す
る。水冷シユラウド４及び熱シールド５を貫通し
たレーザー光照射窓６を設け、光フアイバー７よ
り照射されるレーザー光８を集束レンズ９等によ
り集束して、前記ルツボ１の側壁に照射し、ルツ
ボ１壁を加熱するか又はルツボ壁を透過して被蒸
発物質を加熱して蒸発させる構成としてある。 FIG. 2 is a schematic cross-sectional view when laser light is irradiated from the side of the crucible 1. A crucible 1 charged with a substance to be evaporated 3 and sealed with a top seal 2 is held in a water-cooled shroud 4 via a heat shield 5. A laser light irradiation window 6 is provided which penetrates the water cooling shroud 4 and the heat shield 5, and the laser light 8 emitted from the optical fiber 7 is focused by a focusing lens 9 or the like and irradiated onto the side wall of the crucible 1. The structure is such that the material to be evaporated is heated and evaporated by passing through the crucible wall.
第３図は第２図と同様であるが、レーザー光８
をルツボ底部より照射する構成としたものであ
り、同一符号は同一部材を示している。尚、第３
図において１０は断熱セラミツクスである。 Figure 3 is the same as Figure 2, but the laser beam 8
The structure is such that the light is irradiated from the bottom of the crucible, and the same reference numerals indicate the same members. Furthermore, the third
In the figure, 10 is a heat insulating ceramic.
第４図〜第６図は本発明蒸発源の使用態様の数
例を示す略図であり、第４図は本発明蒸発源１１
３個を被蒸着基板１２に対して求心状に配設した
例であり、前述した如く本発明蒸発源は極めて小
型化し得るので、蒸発源群１１と基板１２との距
離Ｌを例えば60mmと小さくすることができ、更に
蒸発源群の設置幅を約100mmのスペースにするこ
とができ、従つて、蒸発物質の無駄を少なくし、
効率よく基板面に蒸着膜を生成することができ
る。第４図において１３は過冷却コンデンサーで
あり、各蒸発源１１間に配設することにより蒸発
源間相互の汚染防止の作用をなすものである。 FIG. 4 to FIG. 6 are schematic diagrams showing several examples of usage of the evaporation source of the present invention, and FIG.
This is an example in which three evaporation sources are arranged centripetally with respect to the substrate 12 to be evaporated, and as mentioned above, the evaporation source of the present invention can be extremely miniaturized, so the distance L between the evaporation source group 11 and the substrate 12 is as small as, for example, 60 mm. Furthermore, the installation width of the evaporation source group can be reduced to approximately 100 mm, thus reducing the waste of evaporation material.
A deposited film can be efficiently produced on the substrate surface. In FIG. 4, reference numeral 13 denotes a subcooling condenser, which is arranged between each evaporation source 11 to prevent mutual contamination between the evaporation sources.
第５図は本発明蒸発源１１を過冷却コンデンサ
ー１３を介して併設した例を示し、第４図図示の
例と同様に蒸発源１１と基板１２間の距離を小と
し、かつ各蒸発源１１を設置幅を小さくすること
ができ、更に基板１２又は蒸発源１１の何れかを
移動することにより基板１２上に異種の金属膜又
は合金膜を蒸着させることもできる。 FIG. 5 shows an example in which the evaporation sources 11 of the present invention are installed together via a supercooling condenser 13, in which the distance between the evaporation sources 11 and the substrate 12 is shortened similarly to the example shown in FIG. Furthermore, by moving either the substrate 12 or the evaporation source 11, a different type of metal film or alloy film can be deposited on the substrate 12.
第６図は本発明の小型蒸発源１１をマニピユレ
ータ１４の先端部に保持し、マスク１５との併用
によつて基板１２の特定の位置に蒸発源１１を移
動させながら蒸着膜を成長させ得る例を示す略図
である。 FIG. 6 shows an example in which the small-sized evaporation source 11 of the present invention is held at the tip of the manipulator 14, and a deposited film can be grown while moving the evaporation source 11 to a specific position on the substrate 12 by using it together with a mask 15. FIG.
第２図図示の直径10mmφのグラフアイトルツボ
に0.5ｇの砒素（As）を装入し、２×10-10トール
にルツボ内を減圧したのち、50Wのヤグ
（YAG）レーザーを照射してルツボ全体を加熱し
た。この時ルツボ全体の最高温度は630℃であつ
た。ルツボ温度が300℃の時にルツボの上方150mm
の位置でAsの蒸気分圧は１×10-6トールであ
り、基板（GaAs）にGaとともにAsが蒸着され、
光IC用として適したGaAs膜の成長に充分な蒸気
分圧が得られた。 0.5 g of arsenic (As) was charged into a graphite crucible with a diameter of 10 mmφ as shown in Figure 2, and the pressure inside the crucible was reduced to 2 × 10 -10 Torr.The crucible was then irradiated with a 50 W YAG laser. The whole thing was heated. At this time, the maximum temperature of the entire crucible was 630°C. 150mm above the crucible when the crucible temperature is 300℃
The vapor partial pressure of As at the position is 1 × 10 -6 Torr, and As is evaporated together with Ga on the substrate (GaAs),
A sufficient vapor partial pressure was obtained to grow a GaAs film suitable for optical ICs.
第７図は本発明蒸発源のトツプシール部の溶融
除去用としての集光機構の一例を示す略図であ
る。前後進しうるマニピユレータ２０の先端にレ
ンズホルダ２２とそれに連結した光フアイバー２
１を具備し、レンズホルダ２２を図示の如くルツ
ボ１に接近させ、光フアイバー２１からのレーザ
ー光をレンズ２３で集束させることによりトツプ
シール部を溶融させて除去するものである。蒸発
操作開始前にこの集光機構は待機位置に復帰させ
る機構としてある。 FIG. 7 is a schematic diagram showing an example of a light condensing mechanism for melting and removing the top seal portion of the evaporation source of the present invention. A lens holder 22 and an optical fiber 2 connected to the lens holder 22 are attached to the tip of a manipulator 20 that can move forward and backward.
1, a lens holder 22 is brought close to the crucible 1 as shown in the figure, and the laser beam from the optical fiber 21 is focused by the lens 23 to melt and remove the top seal portion. This light collecting mechanism is designed to return to the standby position before starting the evaporation operation.
以上詳述した通り、本発明蒸発源は構造が簡単
であつて、小型の蒸発源とすることができ、従つ
て蒸発源と基板間の距離を小さくし得、蒸発源群
を小さいスペースに併設することもできるので、
蒸発物質を無駄なく利用することができる。又、
狭いスペースに蒸発源を配列できるので異種の蒸
発物質を同時に使用して複合薄膜層又は合金膜を
容易に成長させることができる等、従来品にみら
れない作用効果を奏し得るものである。 As detailed above, the evaporation source of the present invention has a simple structure and can be made into a small evaporation source. Therefore, the distance between the evaporation source and the substrate can be shortened, and a group of evaporation sources can be installed in a small space. You can also do
Evaporated substances can be used without waste. or,
Since evaporation sources can be arranged in a narrow space, different types of evaporation substances can be used simultaneously to easily grow a composite thin film layer or an alloy film, and other effects not seen in conventional products can be achieved.
第１図は本発明のカプセル型蒸発源の例を示す
断面略図、第２図，第３図は本発明カプセル型蒸
発源にレーザー光を照射する態様を示す図、第４
図〜第６図は本発明カプセル型蒸発源の使用例を
示す配置略図、第７図は本発明蒸発源用の集光機
構の略図であり、図中、１はルツボ、２はトツプ
シール、３は被蒸発物質、４は水冷シユラウド、
５は熱シールド、６は照射窓、７は光フアイバ
ー、８はレーザー光、９は集光レンズ、１０は断
熱セラミツクス、１１は蒸発源群、１２は基板、
１３は過冷却コンデンサー、１４はマニピユレー
タ、１５はマスクをそれぞれ示す。
FIG. 1 is a schematic cross-sectional view showing an example of the capsule-type evaporation source of the present invention, FIGS.
6 to 6 are schematic layout diagrams showing usage examples of the capsule-type evaporation source of the present invention, and FIG. 7 is a schematic diagram of the condensing mechanism for the evaporation source of the present invention. In the figures, 1 is a crucible, 2 is a top seal, 3 is the evaporable substance, 4 is the water cooling shroud,
5 is a heat shield, 6 is an irradiation window, 7 is an optical fiber, 8 is a laser beam, 9 is a condensing lens, 10 is a heat insulating ceramic, 11 is an evaporation source group, 12 is a substrate,
13 is a supercooled condenser, 14 is a manipulator, and 15 is a mask.
Claims (1)
からなり被蒸発物質を装入したルツボに、加熱又
は内圧により容易に破壊し得るトツプシールを設
けたことを特徴とするカプセル型蒸発源。 ２ ルツボへのレーザー光照射用光フアイバー機
構を付設した特許請求の範囲第１項記載のカプセ
ル型蒸発源。 ３ 前記蒸発源のトツプシール部への集光機構を
併設した特許請求の範囲第１項記載のカプセル型
蒸発源。 ４ 前記トツプシール材料は前記ルツボに用いら
れる材料の何れかと同一材質である特許請求の範
囲第１項記載のカプセル型蒸発源。[Claims] 1. A capsule type characterized in that a crucible made of a material capable of absorbing or transmitting most of laser light and charged with a substance to be evaporated is provided with a top seal that can be easily destroyed by heating or internal pressure. Evaporation source. 2. The capsule-type evaporation source according to claim 1, which is provided with an optical fiber mechanism for irradiating the crucible with laser light. 3. The capsule-type evaporation source according to claim 1, further comprising a light condensing mechanism for the top seal portion of the evaporation source. 4. The capsule-type evaporation source according to claim 1, wherein the top seal material is the same material as any of the materials used for the crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13990682A JPS5931865A (en) | 1982-08-13 | 1982-08-13 | Capsule type evaporating source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13990682A JPS5931865A (en) | 1982-08-13 | 1982-08-13 | Capsule type evaporating source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5931865A JPS5931865A (en) | 1984-02-21 |
| JPS6157907B2 true JPS6157907B2 (en) | 1986-12-09 |
Family
ID=15256377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13990682A Granted JPS5931865A (en) | 1982-08-13 | 1982-08-13 | Capsule type evaporating source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5931865A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6396809U (en) * | 1986-12-12 | 1988-06-22 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63137162A (en) * | 1986-11-28 | 1988-06-09 | Mitsubishi Electric Corp | Apparatus for forming multilayered film by vapor deposition with laser |
| CN101106901B (en) * | 2004-12-24 | 2011-05-11 | 代表Hj家族的胡纳私人控股有限公司 | Reducing by-catch of seabirds |
| EP1939320B1 (en) * | 2005-12-07 | 2013-08-21 | Novaled AG | Method of vapour deposition |
-
1982
- 1982-08-13 JP JP13990682A patent/JPS5931865A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6396809U (en) * | 1986-12-12 | 1988-06-22 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5931865A (en) | 1984-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5085166A (en) | Laser vapor deposition apparatus | |
| US4101781A (en) | Stable fiber optic scintillative x-ray screen and method of production | |
| JPH01785A (en) | Mask semiconductor laser manufacturing method | |
| JPS6157907B2 (en) | ||
| JPH09298032A (en) | Electron beam generating device | |
| JPH0629160U (en) | Excimer laser window | |
| JPS6065792A (en) | Molecular beam crystal growth apparatus | |
| JPS5469953A (en) | Electron emission device | |
| JPS6236546A (en) | Analysis equipment | |
| TWI877377B (en) | Extreme ultraviolet light source device | |
| JP2004225066A (en) | Molecular beam cell | |
| US3124686A (en) | Goorissen | |
| JPS6120032Y2 (en) | ||
| JPS6247114A (en) | Manufacture of semiconductor single crystal film | |
| US3544307A (en) | Purification of polonium | |
| JPS59172715A (en) | Molecular beam generating equipment | |
| JPH02179868A (en) | Vapor deposition equipment | |
| SU964377A1 (en) | Solar energy collector | |
| JPS63102310A (en) | Formation of single crystal thin film | |
| JPH0387360A (en) | Vacuum depositing device | |
| JP5653128B2 (en) | Laser ablation equipment | |
| JPS6266620A (en) | Electron beam vapor deposition apparatus | |
| JPS63239180A (en) | Semiconductor single crystal manufacturing method and device | |
| JPH0817070B2 (en) | Method for forming blackened aluminum thin film of color picture tube | |
| JPS6378429A (en) | Impregnated cathode structure |