JPS61292988A - Copper metalized ceramic substrate - Google Patents
Copper metalized ceramic substrateInfo
- Publication number
- JPS61292988A JPS61292988A JP13404785A JP13404785A JPS61292988A JP S61292988 A JPS61292988 A JP S61292988A JP 13404785 A JP13404785 A JP 13404785A JP 13404785 A JP13404785 A JP 13404785A JP S61292988 A JPS61292988 A JP S61292988A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- copper
- tungsten
- substrate
- alumina
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 26
- 229910052802 copper Inorganic materials 0.000 title claims description 26
- 239000010949 copper Substances 0.000 title claims description 26
- 239000000919 ceramic Substances 0.000 title claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 38
- 238000007747 plating Methods 0.000 claims description 37
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 21
- 229910052721 tungsten Inorganic materials 0.000 claims description 20
- 239000010937 tungsten Substances 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 6
- 229910000831 Steel Inorganic materials 0.000 description 13
- 239000010959 steel Substances 0.000 description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 230000004913 activation Effects 0.000 description 7
- 229910052763 palladium Inorganic materials 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 101100522123 Caenorhabditis elegans ptc-1 gene Proteins 0.000 description 1
- 241000218645 Cedrus Species 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- -1 palladium ions Chemical class 0.000 description 1
- NXJCBFBQEVOTOW-UHFFFAOYSA-L palladium(2+);dihydroxide Chemical compound O[Pd]O NXJCBFBQEVOTOW-UHFFFAOYSA-L 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は銅メタライズアルミナ基板に係り特にめっき法
メタライズに好適な高信頼性のアルミナ基板に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a copper metallized alumina substrate, and particularly to a highly reliable alumina substrate suitable for metallization by plating.
従来のセラミック基板では特開昭59−36948号公
報に記載のようにタングステン導体上にニッケルめっき
を施した後金めつきを施して電極を形成したり、さらに
は、銀・パラジウム電極を形成した後、部品等のはんだ
付けを行なっている0この場合、導体は、タングステン
かまたは1銀・バラジクム等の厚膜導体となる。こl1
7.)ため導体抵抗が高く、高周波回路等で要求される
低抵抗な導体としては不向きであった。次に低抵抗化の
一例として特開昭58−104079号公報に記載のよ
うにアルミナをアルカリ金属水酸化物溶液で処理後熱処
理を行なって、アルミナ表面を粗化する。しかる後に、
無電解銅めっきを行なって、メタライズする方法が公知
となっている。この場合アルミナ上の鋼メタライズは可
能であるが、タングステン上に同時に信頼度良く形成す
ることが困難である。すなわちタングステンと銅との間
では、局部電池を形成しやすく耐蝕性において不利な条
件となる。ことに無電解銅めっきにおいてはピンホール
が無電解ニッケルめっきに比べて多いため、めっき膜厚
を厚くする必要かある。このため、コスト的に不利なは
かりでなく、高周波回路で必要なマイクロストリップ線
路を形成する際にめつき膜厚が厚いためにエツチング楕
就かはらついて、回路特性が得られない等の欠点力(あ
る。In conventional ceramic substrates, as described in JP-A-59-36948, electrodes are formed by nickel plating on a tungsten conductor and then gold plating, or silver/palladium electrodes are formed. After that, parts are soldered. In this case, the conductor is tungsten or a thick film conductor such as silver or baladicum. This 1
7. ), the conductor resistance was high, making it unsuitable as a low-resistance conductor required for high-frequency circuits, etc. Next, as an example of lowering the resistance, alumina is treated with an alkali metal hydroxide solution and then heat-treated to roughen the surface of the alumina, as described in JP-A-58-104079. After that,
A method of metallizing by performing electroless copper plating is known. In this case, steel metallization on alumina is possible, but it is difficult to simultaneously form it reliably on tungsten. That is, between tungsten and copper, local batteries are likely to form, which is a disadvantage in terms of corrosion resistance. In particular, electroless copper plating has more pinholes than electroless nickel plating, so it is necessary to increase the thickness of the plating film. For this reason, it is not disadvantageous in terms of cost, but also has drawbacks such as the inability to obtain circuit characteristics due to thick plating film thickness that causes etching ellipse or unevenness when forming microstrip lines required for high-frequency circuits. (be.
本発明の目的は、アルミナ生シートを利用してタングス
テン導体を印刷した湿式基板の焼結体にめっき方法によ
ってタングステン部分にニッケルめっさを施した後、鋼
めつきをニッケル上とアルミナ基板上に同時に形成して
後、エツチング法でパターン形成を行なった銅メタライ
ズアルミナ基板を提供することにある。The object of the present invention is to apply nickel plating to the tungsten part using a plating method on a sintered body of a wet substrate printed with a tungsten conductor using a raw alumina sheet, and then apply steel plating to the nickel and alumina substrates. It is an object of the present invention to provide a copper metallized alumina substrate on which a copper metallized alumina substrate is simultaneously formed and patterned using an etching method.
〔発明の4!を要〕
本発明で対象のアルミナ基板はタングステンを配したも
のであればよい。このアルミナ基板は、一般にアルミナ
生シート上にタングステン等の高温焼結導体を印刷後、
1600°C位の高温の還元炉で焼結したものである。[Invention 4! [Required] The alumina substrate to be used in the present invention may be one on which tungsten is arranged. This alumina substrate is generally made by printing a high-temperature sintered conductor such as tungsten on a raw alumina sheet.
It is sintered in a reduction furnace at a high temperature of about 1600°C.
この基板を、アルカリ金属水酸化物等でアルミナを粗化
すると共に、タングステン表面の酸化物をあわせて除去
する。しかる後に、パラジウムイオンとアルカリ溶解性
の錯化剤からなる活性化液中に浸漬して、タングステン
とパラジウムを置換してパラジウム金属核をタングステ
ン上にめっきする。その後、5〜30%の希硫酸か5〜
15%の希塩酸中で、アルカリ分の中和を行なうと同時
にコロイド状残渣となったパラジウム水酸化物を洗い落
す。次に、無電解ニッケルめっきを施すと活性化したタ
ングステン上にニッケルめっきが選択的に析出する。ニ
ッケルめっきの膜厚は3μm以上が望ましく、より信頼
度を高めるには5μm位がよい。次に塩化パラジ2ムが
0.01t’/J〜0.05f/7(含まれる塩酸溶液
(200〜300 mlA )に浸漬して、ニッケル面
上にパラジウムによる活性化を行なう。その後、塩酸5
〜10%の水溶液で密着促進処理後無電解銅めっきを施
す。銅めっき厚は、1〜5μm程度のめつき厚でよい。The alumina of this substrate is roughened using an alkali metal hydroxide or the like, and the oxide on the tungsten surface is also removed. Thereafter, it is immersed in an activating solution consisting of palladium ions and an alkali-soluble complexing agent to replace tungsten and palladium, thereby plating palladium metal nuclei on the tungsten. After that, 5-30% dilute sulfuric acid or 5-30%
In 15% dilute hydrochloric acid, alkaline content is neutralized and at the same time, palladium hydroxide which has become a colloidal residue is washed away. Next, when electroless nickel plating is applied, nickel plating is selectively deposited on the activated tungsten. The thickness of the nickel plating is preferably 3 μm or more, and to further improve reliability, the thickness is preferably about 5 μm. Next, activation with palladium is performed on the nickel surface by immersing it in a hydrochloric acid solution (200-300 mlA) containing 0.01 t'/J to 0.05 f/7 palladium chloride.
Electroless copper plating is applied after adhesion promotion treatment with ~10% aqueous solution. The copper plating thickness may be approximately 1 to 5 μm.
さらにパラジウムと錫イオンを混合した活性化液で、銅
めつきを活性化すると同時にアルミナ部分についても活
性化を行なう。この活性化液はたとえば日立化成工業の
シーダーシステムや8HI PLEソ社のシタリスト6
F、アクセレータ19等のシステムで活性すればよい。Furthermore, an activation liquid containing palladium and tin ions is used to activate the copper plating and at the same time activate the alumina part. This activation liquid can be used, for example, in Hitachi Chemical's Cedar System or 8HI PLE's Sitalist 6.
It can be activated by a system such as F or accelerator 19.
活性化の後に無電解銅めっきによって1基板全体に鋼め
っきを厚付けする。この段階でのめつき厚さは、使用す
る基板の目的に応じて、決定すればよい。次にホトレジ
スト法や印刷法によっテマスキング後エツチングを行な
って所望の回路パターンを形成する。本発明によれば、
タングステンを配した基板に銅めっき法でメタライズで
き、さらに、タングステン上では、ニラ’ytv)6つ
@を介して後に銅メタライズを行なうため、ピンホール
が少なく局部電池作用等による腐蝕が発生しにくい。さ
らに、鋼メタライズパターンの膜厚を薄くしたい場合に
、銅めっきのみでタングステン上をめっきするとピンホ
ールが発生しやすいだけでなく、この上にはんだ付けを
行なった時に銅めっき膜がはんだ中に拡散して著しく接
続性を損うことかある。本発明では、はんだに拡散しに
くいニッケルを介するため、接続信頼性も高い。After activation, a thick steel plating is applied to the entire substrate by electroless copper plating. The plating thickness at this stage may be determined depending on the purpose of the substrate used. Next, a desired circuit pattern is formed by masking and etching using a photoresist method or a printing method. According to the invention,
The substrate on which tungsten is placed can be metallized using the copper plating method, and since the copper metallization is performed later on the tungsten via the tungsten, there are fewer pinholes and corrosion due to local battery action is less likely to occur. . Furthermore, if you want to reduce the film thickness of the steel metallized pattern, plating only copper on tungsten will not only cause pinholes to occur, but when soldering is done on top of this, the copper plating film will diffuse into the solder. This may significantly impair connectivity. In the present invention, since nickel, which is difficult to diffuse into solder, is used, the connection reliability is also high.
以下、本発明の実施例を図により説明する。 Embodiments of the present invention will be described below with reference to the drawings.
多層構造でもよいか、例として、一層構造のタングステ
ン配線とした。第1図に示したようにアルミナグリーン
シート1にスクリーン印刷法でタングステン導体2を印
刷後、1600℃の水素雰囲気炉で焼成を行なった。第
2図は焼結後の基板に第4図で示す工程で、ニッケルめ
っさ6を5μm1部分銅めつき4を3μmめっき後、全
体鋼めっき5を15μm施した時の断面構造を示す。第
5図は、第2図の基板にホトレジストを塗布してネガマ
スクを用いて露光現像を行ない所望部分にのみホトレジ
ストを残して、塩化第二銅エツチング液でエツチングを
行なった後にホトレジストを剥離したようすを示す。こ
のようにして完成した基板について接続強度耐腐蝕性に
ついて試験を行なったところ従来の厚膜法基板差の信頼
性を示し、かつ第5図に示したように基板の針面に直接
鋼メタライズが形成できる高信頼性の鋼メタライズ基板
を得た。As an example, a single layer structure of tungsten wiring was used. As shown in FIG. 1, a tungsten conductor 2 was printed on an alumina green sheet 1 by screen printing, and then fired in a hydrogen atmosphere furnace at 1600°C. FIG. 2 shows a cross-sectional structure when the sintered substrate is plated with nickel plating 6 of 5 μm, partial copper plating 4 of 3 μm, and then overall steel plating 5 of 15 μm. Figure 5 shows the state in which photoresist is applied to the substrate in Figure 2, exposed and developed using a negative mask, the photoresist is left only in desired areas, and the photoresist is peeled off after etching with cupric chloride etching solution. shows. Tests were conducted on the connection strength and corrosion resistance of the boards completed in this way, and they showed that they were more reliable than conventional thick film method boards, and as shown in Figure 5, the steel metallization was applied directly to the needle surface of the board. A highly reliable steel metallized substrate that can be formed was obtained.
この基板を製造するめっき工程は、第4図に示した造り
である。すなわち基板を予備加熱するプリヒート工程6
で基板を温風により約250℃まで、加温した後・苛性
ソーダを3oo℃テ溶融した中に浸漬して約10分間ア
ルミナ表面粗化7を行なった。この時にタングステン部
(ター。The plating process for manufacturing this substrate is shown in FIG. That is, preheating step 6 for preheating the substrate.
After the substrate was heated to about 250° C. with hot air, it was immersed in molten caustic soda at 30° C. for about 10 minutes to roughen the alumina surface 7. At this time, the tungsten part (tar).
の表面酸化が同時に脱錆されて金属光沢が強くなZのが
観察できた。次に放冷8を行なった後10チ硫酸で中和
9を行なった。水洗後、EDTA −2Nα1oy/l
、 NaOH−too y/l 、 PtC1*o、
12μ からなる活性液中で第1活性化処理1゜を行な
って次に密着促進処理11を5%HClで行なった。続
いて無電解ニッケルめっき12を行なった。次に、Pt
C1*oa、o1t/l 、 HCl2300 ml/
lからなる第2活性化処理13と5%HClによる密着
促進処理14を行なった後無電解銅めっき15を行ない
ニッケル上にのみ鋼めっきを行なった。The surface oxidation of Z was simultaneously removed and a strong metallic luster was observed. Next, after cooling 8 was carried out, neutralization 9 was carried out with 10 sulfuric acid. After washing with water, EDTA -2Nα1oy/l
, NaOH-too y/l, PtC1*o,
A first activation treatment of 1° was performed in an activating solution of 12 μm, and then an adhesion promotion treatment 11 was performed with 5% HCl. Subsequently, electroless nickel plating 12 was performed. Next, Pt
C1*oa, o1t/l, HCl2300ml/
After a second activation treatment 13 consisting of nickel and an adhesion promotion treatment 14 using 5% HCl, electroless copper plating 15 was conducted to plate steel only on the nickel.
次いで第3活性処理16を行なうが、使用した液は、5
HIPLHソ社のカタリスト6Fを用いた。さらに密着
促進処理17には同アクセレーター19を用いた。次に
無電解銅めつ@20を行ない基板全体な鋼メタライズし
て、膜厚を得るためKmm銅鋼っき21を行なった。次
に・ホトエツチング工程22で所望のパターンをエツチ
ングして基板を第3図の形に完成した。Next, the third activation treatment 16 is carried out, but the liquid used is
Catalyst 6F manufactured by HIPLH Corporation was used. Furthermore, the same accelerator 19 was used in the adhesion promotion treatment 17. Next, electroless copper plating@20 was performed to metallize the entire board with steel, and Kmm copper steel plating 21 was performed to obtain a film thickness. Next, in a photo-etching step 22, a desired pattern is etched to complete the substrate in the shape shown in FIG.
本発明によれば、アルミナ基板上に配したタングステン
導体と同時にアルミナ基板自身も鋼メタライズできるた
め特に、導体抵抗の低い配線が要求されるチューナ等の
高周波回路に効果がある。またタングステンと銅メタラ
イズの間には、耐蝕性が高くピンホールの少ない無電解
ニッケルめっきを施すため局部電池作用等による腐蝕は
発生しにくい。さらにタングステン部のみニッケルな介
した銅めっき接合のため、はんだ何時のはんだへの銅拡
散がニッケル層で停止するため信頼度が高い。当然では
あるが、Av・Pd厚膜やニッケルめっき導体に比べは
んだ濡れ広がりもプリント基板兼の効果がある。According to the present invention, since the alumina substrate itself can be metallized with steel at the same time as the tungsten conductor disposed on the alumina substrate, it is particularly effective for high frequency circuits such as tuners that require wiring with low conductor resistance. Moreover, since electroless nickel plating is applied between the tungsten and the copper metallization, which has high corrosion resistance and fewer pinholes, corrosion due to local battery action is less likely to occur. Furthermore, since only the tungsten part is bonded with copper via nickel, the diffusion of copper into the solder during soldering stops at the nickel layer, resulting in high reliability. Of course, compared to Av/Pd thick film or nickel plated conductors, the solder wetting spread is also effective as a printed circuit board.
第1図、第2図、第5図は、本発明の銅メタライズアル
ミナ基板の工根別の前面を示した図テアル。第4図は、
第1図の基板な第5図まで処理を行なう工程、を示した
図である。
1・・アルミナグリーンシートおよびその焼結体、2・
・・タングステンペーストおよびその焼結体、6・・・
ニッケルめっき、
4・・・部分鋼めっき、
5・・・全体鋼めっき。
代理人弁理士 小 川 勝 男 ゛−゛第1図
?
第2図
笑3 図FIGS. 1, 2, and 5 are diagrams showing the front side of the copper metallized alumina substrate according to the present invention. Figure 4 shows
FIG. 5 is a diagram showing the process of processing the substrate of FIG. 1 up to FIG. 5; 1. Alumina green sheet and its sintered body, 2.
...Tungsten paste and its sintered body, 6...
Nickel plating, 4... Partial steel plating, 5... Whole steel plating. Representative Patent Attorney Katsutoshi Ogawa ゛-゛Figure 1? Figure 2 lol Figure 3
Claims (1)
み無電解ニッケルめっきを選択的にめつきした後に、基
板全体にわたって無電解銅めっきを施して、その後エッ
チング法にて銅パターンを形成したことを特徴とする銅
メタライズセラミック基板。Copper characterized by selectively plating electroless nickel only on the tungsten conductor on an alumina ceramic substrate, then applying electroless copper plating to the entire substrate, and then forming a copper pattern by etching. Metallized ceramic substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13404785A JPS61292988A (en) | 1985-06-21 | 1985-06-21 | Copper metalized ceramic substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13404785A JPS61292988A (en) | 1985-06-21 | 1985-06-21 | Copper metalized ceramic substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61292988A true JPS61292988A (en) | 1986-12-23 |
Family
ID=15119118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13404785A Pending JPS61292988A (en) | 1985-06-21 | 1985-06-21 | Copper metalized ceramic substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61292988A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6970042B2 (en) | 2002-10-29 | 2005-11-29 | Huettinger Elektronik Gmbh & Co. Kg | Power control for high frequency amplifiers |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4968265A (en) * | 1972-11-06 | 1974-07-02 |
-
1985
- 1985-06-21 JP JP13404785A patent/JPS61292988A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4968265A (en) * | 1972-11-06 | 1974-07-02 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6970042B2 (en) | 2002-10-29 | 2005-11-29 | Huettinger Elektronik Gmbh & Co. Kg | Power control for high frequency amplifiers |
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