JPS61270761A - Mask for forming pattern - Google Patents
Mask for forming patternInfo
- Publication number
- JPS61270761A JPS61270761A JP60113490A JP11349085A JPS61270761A JP S61270761 A JPS61270761 A JP S61270761A JP 60113490 A JP60113490 A JP 60113490A JP 11349085 A JP11349085 A JP 11349085A JP S61270761 A JPS61270761 A JP S61270761A
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- carbon film
- mask
- diamond
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、たとえば高純度合成石英などのようKSiO
!を主成分とする透明ガラス基゛板7.上などに薄膜パ
ターンを形成するいわゆるフォトマスク等に関するもの
であ、る。[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of KSiO, such as high-purity synthetic quartz.
! 7. Transparent glass substrate having as main component It relates to so-called photomasks and the like on which a thin film pattern is formed.
従来この種7オトマスク等としてはやは)同様に透明な
ガラス基する上に、主として純0材を薄膜パターンとし
て使用したフォトマスクが使用されていた。Conventionally, photomasks of this kind have been used which have a transparent glass base and mainly use pure zero material as a thin film pattern.
ところが、最近の状況にみるとと<、LSIの高集積化
に伴い、高解像力をもち、高精度で欠陥の少ないフォト
マスク等がますます要求されるようになって来ているが
、従来タイプのマスクでは技術的に十分対応できていな
いのが実情である〇すなわち、従来フォトマスク用基板
としては510x 、 At雪Qsを主成分として、R
OおよびRhoで表わされる2価金属鹸化物(CaO,
MgOなど)と1価の金属酸化物(Nag O# Ks
Oなど)を多量に含む、いわゆる青板、白板あるいは
Si Ox 、IhOsおよびAL雪Q@を主成分とし
、ROを多く含むいわゆる低膨張ガラス、さらに最近の
超LSIについてみると熱膨張 係数がさらに小さい高
純度の合成石英基板が用いられている。However, looking at the recent situation, with the increasing integration of LSIs, there is an increasing demand for photomasks with high resolution, high precision, and fewer defects. The reality is that the mask is not technically compatible with this. In other words, the conventional photomask substrate is 510x, with At snow Qs as the main component, and R
Saponified divalent metals represented by O and Rho (CaO,
MgO, etc.) and monovalent metal oxides (Nag O# Ks
The so-called blue plate, white plate, or so-called low-expansion glass containing a large amount of RO (O, etc.), or the so-called low-expansion glass containing a large amount of RO, and the thermal expansion coefficient further increases. A small high-purity synthetic quartz substrate is used.
また一方露光装置についてみると、従来は、主として、
加工線巾の広い低集積度のICが主流であったため、1
:1のコンタクト露光や、1:1のプ四シェクション露
光が中心でありたため、マスターレチクルとした成分、
多数のワーキングマスクを複製して、実作業を行なうと
いう方式をとっていた□しかるに、5:1又は10:1
の値の機影が主流になって、しかも、1枚のマスクの加
工精度も著しく高度のものが要求されるように7Thり
てからは、レチクルをつくり、場合によっては直に生産
ラインで使用するケースが多くなり、また、複製するK
しても歩留りの関係から、との数は従来に比べ、著しく
少ないものとなって来ているO
したがって、たとえばフォトマスクについてみるならば
、高精度で高価なフォトマスクを傷つけずに長期間使用
することが、重要課題となりて来ている。On the other hand, when looking at exposure equipment, conventionally, mainly
Since low-integration ICs with wide processing line widths were the mainstream, 1
:1 contact exposure and 1:1 four-section exposure were mainly used, so the components used as the master reticle,
The method used was to duplicate a large number of working masks and perform actual work.
After 7th, reticules with a value of There are many cases where K
For example, if we look at photomasks, for example, the number of high-precision and expensive photomasks that can be used for long periods of time without damaging them is becoming much smaller due to yield issues. It has become an important issue to do so.
しかるに前述のごとく、従来のフォトマスク基板は、白
板、青板、低膨張ガラスあるいは合成石英基板が主流で
あシ、これら基板は、硬さについてみると青板、白板で
約530〜540 kg/wJ 、低膨張ガラスで65
0 kVi位2合成石英では620〜と必ずしも十分で
なく、かつ、この表面に形成されたGなどのパターン膜
は硬さ、および基板との密着性に問題があシ、外的な要
因および電気的要因により著しくキズつきやすいという
大きな欠点をもっている。However, as mentioned above, conventional photomask substrates are mainly white plates, blue plates, low expansion glass, or synthetic quartz substrates, and these substrates have a hardness of about 530 to 540 kg/kg for blue plates and white plates. wJ, 65 with low expansion glass
0 kVi level 2 synthetic quartz has a value of 620~, which is not necessarily sufficient, and the patterned film such as G formed on this surface has problems with hardness and adhesion with the substrate, and is susceptible to external factors and electricity. It has the major drawback of being extremely susceptible to scratches due to various factors.
したがって、それを保護する極薄の膜体が形成できれば
、そのフォトマスクの寿命は大巾に伸ばすことが出来る
。しかし、よく知られているように、フォトマスク基板
は、ICの集積度を上げていく上で、より波長の短い光
、すなわち、紫外光などを効率よく透過させる必要もあ
り、これに適した保護膜は従来うまく形成できていない
のが実情であった。Therefore, if an extremely thin film can be formed to protect the photomask, the life of the photomask can be greatly extended. However, as is well known, photomask substrates need to efficiently transmit light with shorter wavelengths, such as ultraviolet light, in order to increase the degree of integration of ICs. The reality is that protective films have traditionally not been formed well.
またフォトマスクとは別に更に著しく波長の短い電磁波
であるX線を使用する露光方式の検討が現在進められて
いるが、これに用いるマスクは、基板が薄い膜体であり
、これに形成されるパターンも通常はAu * Tuな
どの重金属であって、外的要因あるいは電気的要因によ
シバターンが傷つくケースは非常に大きい0なおかつ、
X線マスクの場合、一般的には1:1プロキルミテイ露
光を用いておシ、マスク自体のパターン精度も著しく高
度1・゛″′′傷9率も大巾に高くな°′C″″ 1
て、問題は深刻である。In addition to photomasks, an exposure method that uses X-rays, which are electromagnetic waves with significantly shorter wavelengths, is currently being considered. The pattern is usually made of heavy metal such as Au*Tu, and there are very large cases where the pattern is damaged by external or electrical factors.
In the case of an X-ray mask, 1:1 pro-chip exposure is generally used, and the pattern accuracy of the mask itself is extremely high.
The problem is serious.
本発明は従来技術のこのような欠点を解決するために新
しい方法を提供するものである。The present invention provides a new method to overcome these shortcomings of the prior art.
すなわち、本発明は、露光光あるいは露光用X線の透過
率が高く、かつ、硬度等の保護機能にすぐれたダイヤモ
ンド様カーボン膜をその表面等に形成し、保護膜゛とし
九ことを特長とするパターン形成用マスクを提供する。That is, the present invention is characterized by forming a diamond-like carbon film on its surface, which has high transmittance to exposure light or exposure X-rays and has excellent protective functions such as hardness, and serves as a protective film. A pattern forming mask is provided.
ダイヤモンド様カーボン膜は硬度が高く、通常1001
0001q以上あり、最大では10 、000 key
−をこえるようにすることも出来、機械的強度的には保
護膜として最適である。また化学的にもその安定性は著
しくすぐれており、熱伝導特性および電気的特性も良好
である0また密度は比較的低く、X線に対す吸収も問題
なく、かつ、通常の光はもちろん、紫外光に対する透光
性もすぐれており、フォトマスクおよびX線用マスクの
保護膜としては最適である。Diamond-like carbon film has high hardness, usually 1001
There are more than 0001q, and the maximum is 10,000 keys
It can also be made to exceed -, making it ideal as a protective film in terms of mechanical strength. In addition, it has excellent chemical stability, good thermal conductivity and electrical properties, and has a relatively low density. It also has excellent transparency to ultraviolet light, making it ideal as a protective film for photomasks and X-ray masks.
本発明の実施に当っては従来通シの方法で、フォトマス
クあるいはX線マスクを作成したのち、その表面にいわ
ゆるプラズマ法、プラズマインシェフシラン法などを含
むc?、D方式によって作成するか、あるいはイオン化
蒸着法、又は反応性スパッタリング等のスパッタ一方式
でつけるなど、それぞれ基板材質と、パタニング材質に
合りた方式を採用することが出来、保護膜としての厚さ
は、基板によって異るが、たとえば石英基板などの場合
には、μにオーダーまで比較的厚くすることも可能であ
るが、通常はこれよシ薄いもので十分である。In carrying out the present invention, a photomask or an X-ray mask is created by a conventional method, and then the surface of the mask is coated with a c? It is possible to adopt a method that suits the substrate material and patterning material, such as by using the D method, or by applying a sputtering method such as ionized vapor deposition or reactive sputtering, and the thickness of the protective film can be adjusted. Although the thickness varies depending on the substrate, for example, in the case of a quartz substrate, it is possible to make it relatively thick to the order of μ, but normally a thinner one is sufficient.
また場合によってはいく分導電性を附与して、保護層と
してもいい。この場合には機械的な損傷に対するほど機
能の他に、静電気的損傷に対しても著しく有効となる。Further, depending on the case, some conductivity may be imparted to the layer to serve as a protective layer. In this case, it is not only effective against mechanical damage, but also extremely effective against electrostatic damage.
なお保護層は必ずしも、最表面に存在する必要はなく、
場合によっては基板の上に形成し、その上にパターン層
を形成しても、大きな効果が得られる。Note that the protective layer does not necessarily have to be on the outermost surface;
In some cases, even if it is formed on a substrate and a pattern layer is formed thereon, a great effect can be obtained.
以下本発明と実施例について説明する。 The present invention and examples will be described below.
青板、白板、低膨張ガラスおよび合成石英ガラスについ
て通常の方法でフォトマスクを作成したのち、CvO方
弐によりダイヤモンド様カーボンを書面IC0,2μの
厚さで形成し保護膜として、マスクの寿命を比較した。After making a photomask using a conventional method using blue plate, white plate, low expansion glass, and synthetic silica glass, diamond-like carbon is formed using a CvO method to a thickness of 0.2 μm as a protective film to prolong the life of the mask. compared.
すなわち、1:1のコンタクト露光として、その寿命を
比較した。保護層なしの白板を1としたときの相対寿命
でみると、青板、白板、低膨張ガラスおよび合成石英ガ
ラスともに現在5以上の寿命となりているが、全く問題
なく使用されている。That is, the lifespan was compared under the assumption of 1:1 contact exposure. Considering the relative lifespan of a white plate without a protective layer as 1, both blue plate, white plate, low expansion glass, and synthetic quartz glass currently have a life of 5 or more, and they are used without any problems.
以上述べたごとく、本発明はその工業上の効果手続祁1
正書(@t)
昭和 6噂 8月 14EIAs stated above, the present invention has an industrial effect through the procedure 1.
Seisho (@t) Showa 6 Rumor August 14EI
Claims (1)
ことを特徴とするパターン形成用マスク。A pattern forming mask characterized by forming a diamond-like carbon film as a surface protective layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60113490A JPS61270761A (en) | 1985-05-27 | 1985-05-27 | Mask for forming pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60113490A JPS61270761A (en) | 1985-05-27 | 1985-05-27 | Mask for forming pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61270761A true JPS61270761A (en) | 1986-12-01 |
Family
ID=14613619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60113490A Pending JPS61270761A (en) | 1985-05-27 | 1985-05-27 | Mask for forming pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61270761A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62194282U (en) * | 1986-05-29 | 1987-12-10 | ||
WO2005067010A3 (en) * | 2003-12-31 | 2005-11-17 | Intel Corp | Extreme ultraviolet mask with molybdenum phase shifter |
JP2015025894A (en) * | 2013-07-25 | 2015-02-05 | 株式会社エスケーエレクトロニクス | Photomask and manufacturing method of photomask |
-
1985
- 1985-05-27 JP JP60113490A patent/JPS61270761A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62194282U (en) * | 1986-05-29 | 1987-12-10 | ||
WO2005067010A3 (en) * | 2003-12-31 | 2005-11-17 | Intel Corp | Extreme ultraviolet mask with molybdenum phase shifter |
US7169514B2 (en) | 2003-12-31 | 2007-01-30 | Intel Corporation | Extreme ultraviolet mask with molybdenum phase shifter |
US7384715B2 (en) | 2003-12-31 | 2008-06-10 | Intel Corporation | Forming an EUV mask with a phase-shifter layer and an intensity balancer layer |
JP2015025894A (en) * | 2013-07-25 | 2015-02-05 | 株式会社エスケーエレクトロニクス | Photomask and manufacturing method of photomask |
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