CN109324473B - Photoetching mask plate and preparation method thereof - Google Patents
Photoetching mask plate and preparation method thereof Download PDFInfo
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- CN109324473B CN109324473B CN201811121061.8A CN201811121061A CN109324473B CN 109324473 B CN109324473 B CN 109324473B CN 201811121061 A CN201811121061 A CN 201811121061A CN 109324473 B CN109324473 B CN 109324473B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
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- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
The invention discloses a photoetching mask plate, which comprises a transparent substrate, wherein the transparent substrate comprises a first surface and a second surface, a chromium layer is formed on the first surface, a passivation layer is arranged on the chromium layer, and an ultraviolet light anti-reflection layer is formed on the second surface. The photoetching mask plate has large size and ultra-thin type, and the photon crystal structure is arranged on the exposure surface, so that the anti-reflection property of ultraviolet light can be improved, the exposure time is reduced in the photoetching process, the productivity is improved, and the service life of the ultraviolet lamp component is prolonged. In addition, the high-density high-hardness alumina passivation layer is adopted for protection on the photoresist contact surface, so that the scratch resistance of the photomask can be improved, the service life of the photomask is greatly prolonged, and the production cost is reduced.
Description
Technical Field
The invention relates to a photoetching mask plate, in particular to a photoetching mask plate and a preparation method thereof.
Background
The photoetching mask is a key link of the whole semiconductor industry, and the semiconductor industry can keep 20% -30% growth in the next years according to the predicted data of CSIA, saidi intelligent library, SEMI and other authoritative institutions along with the increase of the investment of the semiconductor industry in China. With the great development of the semiconductor industry, the demand for semiconductor masks has also exploded.
With the development of semiconductor technology, the size of semiconductor wafer manufacture is also larger and larger, the size of the required photoetching mask is also larger and larger, and the requirement on products is also higher and higher. In the existing semiconductor photoetching technology field, as the mask plate is used repeatedly for quite a few times, the photoresist contact surface is not subjected to special surface scratch resistance treatment, the probability of surface scratch is higher, and the service life of the mask plate is greatly shortened. In addition, in the existing photoetching technology, the reflection of the mask plate causes non-uniformity of an ultraviolet light path on one hand, and causes low ultraviolet light utilization rate on the other hand, and secondly, the substrate is too thick, so that the ultraviolet light path is too long, the ultraviolet light penetration is not facilitated, and the ultraviolet light utilization rate is also low. This series of problems has plagued further developments throughout the industry.
Disclosure of Invention
Aiming at the technical problems existing in the prior art, the invention aims at: the photoetching mask plate has large size, is ultrathin, has a photonic crystal structure on an exposure surface, and can improve the anti-reflection property of ultraviolet light, so that the exposure time is reduced in a photoetching process, the productivity is improved, and the service life of an ultraviolet lamp part is prolonged. In addition, the high-density high-hardness alumina passivation layer is adopted for protection on the photoresist contact surface, so that the scratch resistance of the photomask can be improved, the service life of the photomask is greatly prolonged, and the production cost is reduced.
The technical scheme of the invention is as follows:
the utility model provides a photoetching mask plate, includes transparent substrate, transparent substrate includes first surface and second surface, first surface is formed with the chromium layer, be provided with the passivation layer on the chromium layer, the second surface is formed with the ultraviolet ray anti-reflection layer.
In a preferred technical scheme, the thickness of the transparent substrate is 50-200um, and the thickness of the chromium layer is 100-200nm.
In a preferred technical scheme, the transparent substrate is made of transparent sapphire single crystal material.
In a preferred technical scheme, the thickness of the passivation layer is odd times of lambda/4 wavelength of incident ultraviolet light.
In a preferred technical scheme, the thickness of the ultraviolet light anti-reflection layer is odd times of lambda/4 wavelength of incident ultraviolet light.
In a preferred technical scheme, the ultraviolet light anti-reflection layer is magnesium fluoride.
In the preferred technical scheme, a photonic crystal structure layer is arranged on the surface of the ultraviolet light anti-reflection layer.
The invention also discloses a preparation method of the photoetching mask plate, which comprises the following steps:
s01: plating a chromium layer on the first surface of the transparent substrate by utilizing one of sputtering, electron beam evaporation or thermal evaporation process, wherein the thickness of the chromium layer is 100-200nm;
s02: patterning the surface of the chromium layer;
s03: manufacturing a passivation layer on the surface of the chromium layer;
S04: and plating an ultraviolet light anti-reflection layer on the second surface of the transparent substrate by utilizing one of sputtering or electron beam evaporation.
In the preferred technical scheme, the passivation layer is used for manufacturing a layer of aluminum film by sputtering or electron beam evaporation or thermal evaporation, and then the aluminum oxide film is manufactured by a chemical anodic oxidation process.
In the preferred technical scheme, a photonic crystal structure layer is manufactured on the surface of the ultraviolet light anti-reflection layer.
Compared with the prior art, the invention has the advantages that:
The sapphire single crystal material is used as a substrate to prepare a large-size ultrathin substrate, and the ultrathin substrate has the advantages of shortening an ultraviolet light path and improving the ultraviolet light penetrating capacity. And secondly, a photonic crystal structure is arranged on the exposure surface, so that the anti-reflection property of ultraviolet light can be improved, the exposure time is reduced in the photoetching process, the productivity is improved, the service life of an ultraviolet lamp part is prolonged, the reflection of ultraviolet light is reduced, and certain help is provided for the light path uniformity of incident ultraviolet light. In addition, the contact surface or the approaching surface of the photoresist is protected by adopting the alumina passivation layer with high compactness and high hardness, so that the scratch resistance of the photomask can be improved, the service life of the photomask is greatly prolonged, and the production cost is reduced.
The method has simple process and is suitable for large-scale batch production, and can be widely applied to the field of semiconductor chip photoetching process processing and other optical mask fields.
Drawings
The invention is further described below with reference to the accompanying drawings and examples:
FIG. 1 is a schematic view of a transparent substrate structure according to the present invention;
FIG. 2 is a schematic diagram of a lithographic reticle of the present invention;
FIG. 3 is a flow chart of a method of making a lithographic reticle of the present invention.
Detailed Description
The objects, technical solutions and advantages of the present invention will become more apparent by the following detailed description of the present invention with reference to the accompanying drawings. It should be understood that the description is only illustrative and is not intended to limit the scope of the invention. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the present invention.
Examples:
As shown in fig. 1 and 2, the photolithography mask comprises a transparent substrate 1, wherein the transparent substrate 1 can be made of one of transparent quartz material, transparent soda glass material and transparent sapphire single crystal material, preferably transparent sapphire single crystal material is selected, the thickness of the transparent substrate 1 is 50-200um thick, and the ultra-thin type photolithography mask has the advantages of shortening the ultraviolet light path and improving the ultraviolet light penetrating capacity.
A chromium layer 2 is formed on a first surface (upper surface) of the transparent substrate 1, and the first surface of the transparent substrate 1 is a photoresist contact surface or an approach surface. The thickness of the chromium layer 2 is between 100 and 200nm, and the chromium layer 2 acts as a mask layer; the chromium layer 2 is provided with different patterns according to different mask requirements, and the patterns of the chromium layer 2 can be prepared by a laser direct writing etching method or a photoetching developing corrosion method in a semiconductor process.
The chromium layer 2 is provided with a passivation layer 3, the thickness of the passivation layer 3 is odd times of lambda/4 wavelength of incident ultraviolet light, the thickness is more favorable for avoiding reflection of the ultraviolet light, the second surface of the transparent substrate 1 is provided with an ultraviolet light anti-reflection layer 4, the ultraviolet light anti-reflection layer 4 is made of magnesium fluoride or silicon dioxide material with low refractive index, preferably, the magnesium fluoride material is selected, the thickness of the anti-reflection layer 4 is also odd times of lambda/4 wavelength of the incident ultraviolet light, and the thickness is more favorable for avoiding reflection of the ultraviolet light.
In order to make the anti-reflection layer play a better role in anti-reflection, besides selecting a magnesium fluoride material with low refractive index, a photonic crystal structure is also required to be made on the surface of the anti-reflection layer to form a photonic crystal structure layer 5, so that the anti-reflection layer has an anti-reflection effect on ultraviolet light.
The preparation method of the photoetching mask plate is shown in fig. 3, and specifically comprises the following steps:
Firstly, a layer of chromium layer is prepared on the upper surface (namely the photoresist contact surface or the near surface) of the transparent sapphire substrate 1 by utilizing one of sputtering, electron beam evaporation or thermal evaporation technology, the thickness of the chromium layer is between 100 and 200nm, and the chromium layer acts as a mask layer. And setting the chromium layer into different patterns according to different mask requirements to form a patterned mask chromium layer 2, wherein the patterning of the patterned mask chromium layer 2 can be prepared by a laser direct writing etching method or a photoetching development corrosion method in a semiconductor process.
The patterned mask chromium layer 2 is protected by a passivation layer, the passivation layer is made of transparent aluminum oxide material with compact material and high hardness, the aluminum oxide passivation layer 3 has the effect of scratch resistance, the scratch resistance of a photoresist contact surface or a near surface of a mask can be improved, the thickness of the aluminum oxide passivation layer 3 is odd times of lambda/4 wavelength of incident ultraviolet light, the thickness is more favorable for avoiding reflection of the ultraviolet light and enhancing reflection of the ultraviolet light, the aluminum oxide passivation layer 3 is prepared by a physical and chemical combination method, a layer of aluminum film is firstly made by physical methods such as sputtering or electron beam evaporation or thermal evaporation, and then the aluminum oxide passivation layer 3 is prepared by a chemical anodic oxidation process.
Then, one of sputtering or electron beam evaporation is used to perform film plating on the lower surface (i.e. the ultraviolet exposure surface) of the transparent sapphire substrate 1 to manufacture an ultraviolet light anti-reflection layer 4, wherein the ultraviolet light anti-reflection layer 4 is made of magnesium fluoride or silicon dioxide with low refractive index, preferably magnesium fluoride, and the thickness of the magnesium fluoride anti-reflection layer 4 is also odd multiple of lambda/4 wavelength of incident ultraviolet light, which is more beneficial to avoiding reflection of ultraviolet light.
In order to make the magnesium fluoride anti-reflection layer 4 play a better role in anti-reflection, besides selecting a magnesium fluoride material with low refractive index, a photonic crystal structure layer 5 is also required to be made on the surface of the anti-reflection layer, so that the anti-reflection effect on ultraviolet light is achieved. Finally, the required large-size ultra-thin anti-reflection scratch-resistant photoetching mask plate is manufactured.
The photoetching mask plate prepared by the method of the invention is easier to prepare a large-size ultrathin substrate due to the characteristics of high hardness, difficult deformation and the like of the sapphire by adopting the sapphire single crystal material as the substrate, and the ultrathin substrate has the advantage of shortening the ultraviolet light path and improves the ultraviolet light penetrating capacity. And secondly, a photonic crystal structure is arranged on the exposure surface, so that the anti-reflection property of ultraviolet light can be improved, the exposure time is reduced in the photoetching process, the productivity is improved, the service life of an ultraviolet lamp part is prolonged, the reflection of ultraviolet light is reduced, and certain help is provided for the light path uniformity of incident ultraviolet light. In addition, the contact surface or the approaching surface of the photoresist is protected by adopting the alumina passivation layer with high compactness and high hardness, so that the scratch resistance of the photomask can be improved, the service life of the photomask is greatly prolonged, and the production cost is reduced. The method has simple process and is suitable for large-scale batch production, and can be widely applied to the field of semiconductor chip photoetching process processing and other optical mask fields.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explanation of the principles of the present invention and are in no way limiting of the invention. Accordingly, any modification, equivalent replacement, improvement, etc. made without departing from the spirit and scope of the present invention should be included in the scope of the present invention. Furthermore, the appended claims are intended to cover all such changes and modifications that fall within the scope and boundary of the appended claims, or equivalents of such scope and boundary.
Claims (4)
1. The photoetching mask plate comprises a transparent substrate, wherein the transparent substrate comprises a first surface and a second surface, and is characterized in that a chromium layer is formed on the first surface, an aluminum oxide passivation layer is arranged on the chromium layer, and an ultraviolet light anti-reflection layer is formed on the second surface;
the thickness of the passivation layer is odd times of lambda/4 wavelength of incident ultraviolet light;
The surface of the ultraviolet light anti-reflection layer is provided with a photonic crystal structure layer, the ultraviolet light anti-reflection layer is magnesium fluoride, and the thickness of the ultraviolet light anti-reflection layer is odd times of lambda/4 wavelength of incident ultraviolet light.
2. The lithographic reticle of claim 1, wherein the transparent substrate has a thickness of 50-200um and the chromium layer has a thickness of 100-200nm.
3. The lithographic reticle of claim 1, wherein the transparent substrate is a transparent sapphire single crystal material.
4. The preparation method of the photoetching mask plate is characterized by comprising the following steps of:
s01: plating a chromium layer on the first surface of the transparent substrate by utilizing one of sputtering, electron beam evaporation or thermal evaporation process, wherein the thickness of the chromium layer is 100-200nm;
s02: patterning the surface of the chromium layer;
s03: manufacturing a passivation layer on the surface of the chromium layer;
s04: plating an ultraviolet light anti-reflection layer on the second surface of the transparent substrate by utilizing one of sputtering or electron beam evaporation;
the thickness of the passivation layer is odd times of lambda/4 wavelength of incident ultraviolet light;
manufacturing a photonic crystal structure layer on the surface of the ultraviolet light anti-reflection layer;
The passivation layer is used for manufacturing a layer of aluminum film by sputtering or electron beam evaporation or thermal evaporation, and then the aluminum oxide film is manufactured by a chemical anodic oxidation process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811121061.8A CN109324473B (en) | 2018-09-26 | 2018-09-26 | Photoetching mask plate and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811121061.8A CN109324473B (en) | 2018-09-26 | 2018-09-26 | Photoetching mask plate and preparation method thereof |
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| CN109324473A CN109324473A (en) | 2019-02-12 |
| CN109324473B true CN109324473B (en) | 2024-09-13 |
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| CN201811121061.8A Active CN109324473B (en) | 2018-09-26 | 2018-09-26 | Photoetching mask plate and preparation method thereof |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112346295A (en) * | 2020-11-30 | 2021-02-09 | 苏州瑞而美光电科技有限公司 | Photoetching mask plate with nano-scale patterning size and preparation method thereof |
| CN112698544A (en) * | 2020-12-29 | 2021-04-23 | 苏州莱科光学科技有限公司 | Preparation method of light control film |
Citations (5)
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| CN104267574A (en) * | 2014-09-03 | 2015-01-07 | 京东方科技集团股份有限公司 | Mask |
| CN106410008A (en) * | 2016-10-25 | 2017-02-15 | 华灿光电（浙江）有限公司 | High-brightness light-emitting diode chip and preparation method thereof |
| CN106409992A (en) * | 2016-10-25 | 2017-02-15 | 华灿光电（浙江）有限公司 | Preparation method of high-reliability light-emitting diode |
| CN108051982A (en) * | 2018-01-03 | 2018-05-18 | 京东方科技集团股份有限公司 | A kind of mask plate and preparation method thereof, photolithography method |
| CN208737213U (en) * | 2018-09-26 | 2019-04-12 | 苏州瑞而美光电科技有限公司 | A kind of lithography mask version |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU4291099A (en) * | 1998-09-30 | 2000-04-17 | Nikon Corporation | Photomask and exposure method |
| KR101557800B1 (en) * | 2008-10-10 | 2015-10-07 | 삼성전자주식회사 | Photonic crystal optical filter, reflection type color filter using the same, and display device |
| CN105511220B (en) * | 2016-02-04 | 2019-12-27 | 京东方科技集团股份有限公司 | Mask plate |
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- 2018-09-26 CN CN201811121061.8A patent/CN109324473B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104267574A (en) * | 2014-09-03 | 2015-01-07 | 京东方科技集团股份有限公司 | Mask |
| CN106410008A (en) * | 2016-10-25 | 2017-02-15 | 华灿光电（浙江）有限公司 | High-brightness light-emitting diode chip and preparation method thereof |
| CN106409992A (en) * | 2016-10-25 | 2017-02-15 | 华灿光电（浙江）有限公司 | Preparation method of high-reliability light-emitting diode |
| CN108051982A (en) * | 2018-01-03 | 2018-05-18 | 京东方科技集团股份有限公司 | A kind of mask plate and preparation method thereof, photolithography method |
| CN208737213U (en) * | 2018-09-26 | 2019-04-12 | 苏州瑞而美光电科技有限公司 | A kind of lithography mask version |
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