JPS61222978A - Composition for metallization - Google Patents
Composition for metallizationInfo
- Publication number
- JPS61222978A JPS61222978A JP6588585A JP6588585A JPS61222978A JP S61222978 A JPS61222978 A JP S61222978A JP 6588585 A JP6588585 A JP 6588585A JP 6588585 A JP6588585 A JP 6588585A JP S61222978 A JPS61222978 A JP S61222978A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- metal layer
- silver
- zirconium
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims description 18
- 238000001465 metallisation Methods 0.000 title claims 2
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000000919 ceramic Substances 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 11
- 150000004678 hydrides Chemical class 0.000 claims description 11
- 229910052726 zirconium Inorganic materials 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000000843 powder Substances 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- PCEXQRKSUSSDFT-UHFFFAOYSA-N [Mn].[Mo] Chemical compound [Mn].[Mo] PCEXQRKSUSSDFT-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はセラミック体にメタライズ金属層を形成するた
めのメタライズ用組成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a metallizing composition for forming a metallized metal layer on a ceramic body.
（従来の技術）
従来、セラミック体と金属の接合は生もしくは焼結セラ
ミック体表面に、モリブデン−マンガン（ＭＯ−Ｍｎ）
、タングステン（Ｗ）等の高融点金属粉末に有機バイ
ンダー及び溶剤を添加し、ペースト状と成したものをス
クリーン印刷によシ塗布し、これを還元雰囲気中で焼成
して高融点金属とセラミック体とを焼結一体化させメタ
ライズ金属層を被着させるとともに該メタライズ金属層
上に金属をロウ材を介しロウ付けすることによって行な
われている。(Prior art) Conventionally, bonding between a ceramic body and a metal was performed using molybdenum-manganese (MO-Mn) on the surface of the raw or sintered ceramic body.
, an organic binder and a solvent are added to high melting point metal powder such as tungsten (W) to form a paste, which is applied by screen printing, and then fired in a reducing atmosphere to form a high melting point metal and a ceramic body. This is accomplished by sintering and integrating the two, depositing a metallized metal layer, and brazing the metal onto the metallized metal layer via a brazing material.
（発明が解決しようとする問題点）
しかし乍ら、この従来のモリブデン−マンガン等を使用
したメタライズ金属層はアルミナ（ＡＩｌｚＯｍ）に代
表される酸化物系セラミックにしか被着せず、法化珪素
（Ｓｉ、Ｃ） 、窒化珪素（Ｓｉ、５Ｎｎ）には被着し
ないことから被着されるセラミック体の材料に大きな制
約を受けるという欠点を有していた。(Problems to be Solved by the Invention) However, this conventional metallized metal layer using molybdenum-manganese or the like can only be adhered to oxide-based ceramics such as alumina (AIlzOm); Since it does not adhere to silicon nitride (Si, C) or silicon nitride (Si, 5Nn), it has the disadvantage that there are significant restrictions on the material of the ceramic body to which it is applied.
（発明の目的）
本発明者等は上記欠点に鑑み種々の実験の結果、ジルコ
ニウムもしくはその水素化物と、銀もしくはその合金の
少なくとも一種との共晶物はセラミックに対して活性が
あり、５ｋｇ／＊ｍ 以上の強度で強固に接合するこ
とを知見した。(Objective of the Invention) In view of the above-mentioned drawbacks, the present inventors have conducted various experiments and found that a eutectic of zirconium or its hydride and at least one of silver or its alloys is active against ceramics, and that *It was found that the bonding was strong with a strength of more than m.
本発明は上記知見に基づき、酸化物系、炭化物系及び窒
化物系のすべてのセラミックにメタツイズ金属層を被着
することができるメグライズ用組成物を提供することを
その目的とするものである。Based on the above-mentioned findings, the present invention aims to provide a meglyzing composition capable of depositing a metal layer on all oxide-based, carbide-based, and nitride-based ceramics.
本発明のメグライズ用組成物はセラミック体に金属を接
合して成る部品、具体的には外部リード端子が多数ロウ
付けされてなる半導体パッケージや電気回路配線基板等
において、外部リード端子をロウ付けするためのメタラ
イズ金属層の形成に好適に使用される。The meglyzing composition of the present invention is used for brazing external lead terminals in parts made by bonding metal to a ceramic body, specifically semiconductor packages, electric circuit wiring boards, etc. in which a large number of external lead terminals are brazed. It is suitably used for forming a metallized metal layer for.
Ｃ問題点を解決するための手段）
本発明のメグライズ用組成物はジルコニウムもしくはそ
の水素化物３乃至５０重量％と銀もしくはその合金の少
なくとも一種５０乃至９７重量％とから成シ、メタライ
ズ金属層をセラミックに５ｋｇ／屑屑 以上の接合強度
で接合することができることを特徴とするものである。Means for Solving Problem C) The meglyzing composition of the present invention is composed of 3 to 50% by weight of zirconium or its hydride and 50 to 97% by weight of at least one of silver or its alloy, and has a metallized metal layer. It is characterized in that it can be bonded to ceramic with a bonding strength of 5 kg/waste or more.
本発明のメグライズ用組成物においてはジルコニウムも
しくはその水素化物の量が３重量％未満あるいは５０重
量％以上、銀もしくはその合金の量が５０重量％未満あ
るいは９７重量％以上であるとジルコニウムもしくはそ
の水素化物と銀もしくはその合金とで形成される共晶物
の絶対量が不足し、メタライズ金属層とセラミックとの
接合強度が低下する。In the meglyzing composition of the present invention, when the amount of zirconium or its hydride is less than 3% by weight or more than 50% by weight, and the amount of silver or its alloy is less than 50% by weight or more than 97% by weight, zirconium or its hydrogen The absolute amount of the eutectic formed by the compound and silver or its alloy becomes insufficient, and the bonding strength between the metallized metal layer and the ceramic decreases.
よって、本発明のメグライズ用組成物においてはジルコ
ニウムもしくはその水素化物は３乃至５０重量％の範囲
に、また銀もしくはその合金は５゜乃至９７重量％の範
囲に特定される。Therefore, in the meglyzing composition of the present invention, the content of zirconium or its hydride is specified in the range of 3 to 50% by weight, and the content of silver or its alloy is specified in the range of 5% to 97% by weight.
本発明のメグライズ用組成物はジルコニウムもしくはそ
の水素化物の粉末と、銀もしくはその合金の粉末とを混
合し混合粉末状となすか、ジルコニウムもしくはその水
素化物の箔と、銀もしくはその合金の箔とを重ね合せ二
層構造となすか、粉末状のジルコニウムもしくはその水
素化物と箔状の銀もしくはその合金とを組合せるか、あ
るいはその逆の組合せによってメグライズ用組成物とし
て使用される。The meglyzing composition of the present invention is prepared by mixing powder of zirconium or its hydride and powder of silver or its alloy to form a mixed powder, or by combining a foil of zirconium or its hydride and a foil of silver or its alloy. It is used as a meglyzing composition by stacking them to form a two-layer structure, or by combining powdered zirconium or its hydride with foiled silver or its alloy, or vice versa.
（実施例） 次に本発明を実施例に基づき説明する。(Example) Next, the present invention will be explained based on examples.
まず、ジルコニウム（Ｚｒ）もしくはその水素化物（Ｚ
ｒＨｔ）及び銀（Ａｇ）もしくはその合金（例えばＡｇ
−Ｃｕ ）の粉末及び箔を準備し、これを下表に示す
ようだ組み合せ、厚みでメタライズ金属層を得た。次に
これをアルミナ（ＡＩ！２０ｓ） 、炭化珪素（ＳＩＣ
）、窒化珪素（ＳｉｓＮ４）から成るセラミック体表面
に直径５ ｗｔｍの円形状に取着するとともに真空炉中
、約１０００℃の温度で焼成し、セラミック体表面にメ
タライズ金属層を被着させる。そして次に直径５ｎ＊ｍ
、長さ２０ ｍｍのコバーｔｖ （Ｆｅ −Ｎｉ。First, zirconium (Zr) or its hydride (Z
rHt) and silver (Ag) or its alloys (e.g. Ag
-Cu) powder and foil were prepared, and metallized metal layers were obtained using the combinations and thicknesses shown in the table below. Next, this is mixed with alumina (AI!20s) and silicon carbide (SIC).
) is attached to the surface of a ceramic body made of silicon nitride (SisN4) in a circular shape with a diameter of 5 wtm and fired in a vacuum furnace at a temperature of about 1000° C. to deposit a metallized metal layer on the surface of the ceramic body. And then the diameter is 5n*m
, 20 mm long cover tv (Fe-Ni.
−Ｃｏ合金）から成る円柱体を銀ロウ材を介してロウ付
けし、しかる后、コパール円柱体を垂直力６ 向に引
っ張り、単位面積当シの接合強度を調べた。-Co alloy) were brazed together via a silver solder, and then the copper cylinders were pulled in a vertical direction to examine the bonding strength per unit area.
尚、前記ジルコニウムもしくはその水素化物及び銀もし
くはその合金は粉末状のものを使用する場合、その粒径
を１〜５μｍに調整し、これに有機バインダー及び溶剤
を添加するとともに混線機で１０時間混混線、ペースト
状と々してセフミック体表面に取着した。When using powdered zirconium or its hydride and silver or its alloy, the particle size is adjusted to 1 to 5 μm, an organic binder and a solvent are added thereto, and the mixture is mixed in a mixer for 10 hours. It was attached to the surface of cefmic bodies in the form of wires or pastes.
また試料番号２４〜２６は本発明品と比較するための比
較試料であシ、従来一般に使用されているモリブデン−
マンガン（Ｍｏ −Ｍｎ）から成るメグライズ用組成物
である。In addition, sample numbers 24 to 26 are comparative samples for comparing with the products of the present invention.
This is a meglyzing composition made of manganese (Mo-Mn).
上記の結果を下表に示す。The above results are shown in the table below.
（発明の効果）
上記実験結果からも判るように従来のメタライズ用組成
物（Ｍｏ −Ｍｎ ）を使用したメタライズ金属層はア
μミナ（ＡＩ２０ｓ）には被着されるものの炭化珪素（
Ｓ１Ｃ）、窒化珪素（ＳｉｌＮ４）には−切被着されな
いのに対し、本発明のメタライズ用組成物を使用したメ
タライズ金属層はアμミナ（ＡＪ＊（ｈ）炭化珪素（Ｓ
ｉＣ）及び窒化珪素（Ｓｉ−３Ｎ ４ ）のいずれのセ
フミック体にも接合強度５ ｋｇ ／ ｔｎｍ 以上の
強度で被着させることができる。特にジルコニウムもし
くはその水素化物１０乃至３０重量％、銀もしくはその
合金７０乃至９０重量％から成るメタライズ用組成物を
使用したメタライズ金属層はその接合強度が１０に９／
ｊｌｌｌｌｌ 以上と極めて強く、外部リード端子等を
ロウ付けするメタライズ金属層を形成するメタライズ用
組成物として好適である。(Effects of the Invention) As can be seen from the above experimental results, the metallized metal layer using the conventional metallizing composition (Mo-Mn) was deposited on Aμmina (AI20s) but not on silicon carbide (Al20s).
S1C), silicon nitride (SilN4) is not deposited by cutting, whereas the metallized metal layer using the metallizing composition of the present invention is coated with ammina (AJ*(h) silicon carbide (SilN4)).
It can be adhered to both cefmic materials such as iC) and silicon nitride (Si-3N 4 ) with a bonding strength of 5 kg/tnm or more. In particular, a metallized metal layer using a metallizing composition consisting of 10 to 30% by weight of zirconium or its hydride and 70 to 90% by weight of silver or its alloy has a bonding strength of 9/10.
The composition is extremely strong, and is suitable as a metallizing composition for forming a metallized metal layer to which external lead terminals and the like are brazed.
したがって、本発明のメタライズ用組成物は外部リード
端子が多数ロウ付けされてなる電子部品において、該端
子等がロウ付けされるメタライズ金属層の形成に極めて
有用である。Therefore, the metallizing composition of the present invention is extremely useful for forming a metallized metal layer to which a large number of external lead terminals are brazed, in electronic components to which these terminals are brazed.
Claims (1)
銀もしくはその合金の少なくとも一種５０乃至９７重量
％とから成り、メタライズ金属層をセラミックに５ｋｇ
／ｍｍ＾２以上の接合強度で接合することができるメタ
ライズ用組成物。A metallized metal layer of 3 to 50% by weight of zirconium or its hydride and 50 to 97% by weight of at least one type of silver or its alloy is applied to the ceramic.
A composition for metallization that can be bonded with a bonding strength of /mm^2 or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60065885A JPH0678196B2 (en) | 1985-03-28 | 1985-03-28 | Metallizing composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60065885A JPH0678196B2 (en) | 1985-03-28 | 1985-03-28 | Metallizing composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61222978A true JPS61222978A (en) | 1986-10-03 |
| JPH0678196B2 JPH0678196B2 (en) | 1994-10-05 |
Family
ID=13299874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60065885A Expired - Fee Related JPH0678196B2 (en) | 1985-03-28 | 1985-03-28 | Metallizing composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0678196B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6867108B2 (en) * | 2001-04-13 | 2005-03-15 | Samsung Electronics Co., Ltd. | Wiring line assembly and method for manufacturing the same, and thin film transistor array substrate having the wiring line assembly and method for manufacturing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6032648A (en) * | 1983-08-02 | 1985-02-19 | 株式会社東芝 | Method of metallizing ceramics and alloy foil for metallizing ceramics |
| JPS6033280A (en) * | 1983-07-27 | 1985-02-20 | 株式会社日立製作所 | Metallized pastes and ceramic products |
-
1985
- 1985-03-28 JP JP60065885A patent/JPH0678196B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6033280A (en) * | 1983-07-27 | 1985-02-20 | 株式会社日立製作所 | Metallized pastes and ceramic products |
| JPS6032648A (en) * | 1983-08-02 | 1985-02-19 | 株式会社東芝 | Method of metallizing ceramics and alloy foil for metallizing ceramics |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6867108B2 (en) * | 2001-04-13 | 2005-03-15 | Samsung Electronics Co., Ltd. | Wiring line assembly and method for manufacturing the same, and thin film transistor array substrate having the wiring line assembly and method for manufacturing the same |
| US7276731B2 (en) | 2001-04-13 | 2007-10-02 | Samsung Electronics Co., Ltd. | Wiring line assembly and method for manufacturing the same, and thin film transistor array substrate having the wiring line assembly and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0678196B2 (en) | 1994-10-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |