JPS6115761U

JPS6115761U - Semiconductor integrated circuit device

Info

Publication number: JPS6115761U
Application number: JP10090784U
Authority: JP
Inventors: 輝夫田端
Original assignee: 三洋電機株式会社
Priority date: 1984-07-04
Filing date: 1984-07-04
Publication date: 1986-01-29
Also published as: JPH0440273Y2

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of drawings]

第１図および第２図は本考案の一実施例を示し、第１図
は上面図、第２図は第１図の■一■線断面図である。第３図はコレクタベースショート型ダイオードの使用例
の一例を示す回路図てある。第４図および第５図は従来例を示し、第４図は上面図、
第５図は第４図の■一■線断面図である。１・．・・半導体基板、２・・・エビタキシャル層、３
」・・島領域、４・・・分離領域、６・・・ベース領域
、７・・・エミツタ領域、８・・・コレクタコンタクト
領域、９・・・カソード電極、１０・・・アノード電極
。FIGS. 1 and 2 show an embodiment of the present invention, with FIG. 1 being a top view and FIG. 2 being a sectional view taken along the line 1-2 in FIG. FIG. 3 is a circuit diagram showing an example of the use of a collector-base short type diode. 4 and 5 show a conventional example, and FIG. 4 is a top view;
FIG. 5 is a cross-sectional view taken along line 1--2 in FIG. 4. 1.. ...Semiconductor substrate, 2...Ebitaxial layer, 3
"... Island region, 4... Separation region, 6... Base region, 7... Emitter region, 8... Collector contact region, 9... Cathode electrode, 10... Anode electrode.

Claims

[Scope of utility model registration request]

A semiconductor substrate of one conductivity type, an epitaxial layer of an opposite conductivity type provided on this substrate and serving as a collector region, and an island region formed by separating this epitaxial layer into islands by a separation region of one conductivity type. a base region of one conductivity type formed on the surface of the island region, an emitter region of the opposite conductivity type formed on the surface of the base region, and a collector contact region of the opposite conductivity type formed on the surface of the island region. , a collector base short type Zener diode comprising a cathode electrode in ohmic contact with the emitter region, and an anode electrode in ohmic contact with the base region and the collector contact region, wherein the front cathode electrode is expanded to form the island. 1. A semiconductor integrated circuit device, characterized in that the surface of the island region is coated to prevent the surface of the island region from being inverted.