JPS61147530A - Reactive ion etching method - Google Patents
Reactive ion etching methodInfo
- Publication number
- JPS61147530A JPS61147530A JP26998284A JP26998284A JPS61147530A JP S61147530 A JPS61147530 A JP S61147530A JP 26998284 A JP26998284 A JP 26998284A JP 26998284 A JP26998284 A JP 26998284A JP S61147530 A JPS61147530 A JP S61147530A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- etching
- gas
- shutter
- reactive ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001020 plasma etching Methods 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 15
- 238000005530 etching Methods 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 20
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 229910000838 Al alloy Inorganic materials 0.000 abstract 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 11
- 239000007795 chemical reaction product Substances 0.000 description 10
- 239000000460 chlorine Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- -1 HCfl Chemical class 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、反応性イオンエツチング方法に関し、特に表
面りＡＱＲ又はＡ２と３ｉ、Ｑｕ等との合金膜をエツチ
ングする反応性イオンエツチング方法に係わる。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a reactive ion etching method, and particularly to a reactive ion etching method for etching a surface-grained AQR or an alloy film of A2, 3i, Qu, etc.
発明の技術的背景とその問題点）
集積回路等の配線材料としては、Ａ２又はＡ２−５ｒ、
Ａｇ−ｃｕ金合金汎用されている。こうした配線は、従
来よりＡＱｍ又はＡｇ合金膜を反応性ガスを用いた反応
性イオンエツチング法による選択エツチングによって形
成されている。この反応性ガスとしては、ＣＣＪ２４
、ＢＣｆｆｉｓ、ＣＮ３等の０２系ガスが使用されてい
る。しかしながら、かかる方法では反応生成物として潮
解性を有するＡ２と塩素の化合物（ＡｆｆｉＣｆｆｉｉ
等）が被エツチング材上に残留する。その結果、エツチ
ング後に空気中に含まれる水分と反応してＨＣｆｌ等の
酸を生じるため、被エツチング材表面のＡ２配線の再腐
蝕が進行するという問題があった。Technical background of the invention and its problems) Wiring materials for integrated circuits, etc. include A2 or A2-5r,
Ag-cu gold alloy is widely used. Such wiring has conventionally been formed by selectively etching an AQm or Ag alloy film using a reactive ion etching method using a reactive gas. This reactive gas is CCJ24
, BCffis, CN3, etc. are used. However, in this method, a deliquescent compound of A2 and chlorine (AffiCffii) is used as a reaction product.
etc.) remain on the material to be etched. As a result, after etching, the etching reacts with moisture contained in the air to produce acids such as HCfl, resulting in the problem that re-corrosion of the A2 wiring on the surface of the material to be etched progresses.
このようなことから、Ｃｌ系ガスでの反応性イオンエツ
チングを行なうエツチング室と０２プラズマを発生する
反応室とを備えた反応性イオンエツチング装置を用い、
被エツチング材表面のＡ２膜等をエツチング室で反応性
イオンエツチングを行なった後、該被エツチング材を反
応室に導入し、゛ ここでＡ２配線上に残留したＡＱ、
Ｃａ３等の反応生成物を０２プラズマにより除去するこ
とが行われている。For this reason, we used a reactive ion etching apparatus equipped with an etching chamber that performs reactive ion etching using Cl-based gas and a reaction chamber that generates 02 plasma.
After performing reactive ion etching on the A2 film etc. on the surface of the material to be etched in the etching chamber, the material to be etched is introduced into the reaction chamber.
Removal of reaction products such as Ca3 and the like is performed using 02 plasma.
しかしながら、０２プラズマで処理する方法ではＡｌＣ
ｌ２の除去が充分に行なわれず、一部残留して再腐蝕が
進行するという可能性があった。However, in the method using 02 plasma, AlC
There was a possibility that 12 was not removed sufficiently and a portion remained and re-corrosion progressed.
また、ｏ２プラズマによる処理ではＡ２膜等のエツチン
グ時のマスクとして使用されるレジストパターン等の高
分子物質も同時に除去されるため、被エツチング材の追
加エツチングが不可能となる。Furthermore, in the O2 plasma treatment, polymeric materials such as resist patterns used as masks during etching of A2 films and the like are also removed at the same time, making additional etching of the material to be etched impossible.
更に、０２プラズマを行なうための別の反応系が必要と
なるので、装置が高価となり、生産コストも当然のよう
に高騰化するという問題があった。Furthermore, since a separate reaction system is required for performing the 02 plasma, there is a problem that the equipment becomes expensive and the production cost naturally rises.
本発明は、０２プラズマを使用せずに安価な装置で被エ
ツチング材上に残留するＡｌＣｌ３等の潮解性を有する
反応生成物を昇華除去し得る反応性イオンエツチング方
法を提供しようとするものである。The present invention aims to provide a reactive ion etching method capable of sublimating and removing deliquescent reaction products such as AlCl3 remaining on a material to be etched using an inexpensive device without using 02 plasma. .
本発明は、真空チャンバ内でＣｌ系ガスのプラズマによ
り表面にＡｎｌ又はＡｆｆｉを主成分とする合金膜が被
覆された被エツチング材をエツチングした後、該チャン
バから被エツチング材を取出し、１６０℃以上の温度で
熱処理することを特徴とするものである。かかる本発明
によれば、反応性イオンエツチング後に被エツチング材
上に残留した反応生成物を１６０℃以上の温度で加熱処
理することによって、昇華除去できるため、安価な装置
で前記反応生成物によるＡＲ又はＡ２合金の配線の再腐
蝕を防止でき、ひいては高精度の配線を形成できる等の
効果を有する。In the present invention, a material to be etched whose surface is coated with an alloy film containing Anl or Affi as a main component is etched in a vacuum chamber by Cl-based gas plasma, and then the material to be etched is removed from the chamber and etched at a temperature of 160° C. or higher. It is characterized by heat treatment at a temperature of . According to the present invention, the reaction products remaining on the material to be etched after reactive ion etching can be removed by sublimation by heat treatment at a temperature of 160° C. or higher, so that AR caused by the reaction products can be removed using an inexpensive device. Alternatively, it is possible to prevent re-corrosion of the A2 alloy wiring, and as a result, it is possible to form highly accurate wiring.
上記Ｃｌ系ガスとしては、例えばＣＣｆｆ１＋ 、ＢＣ
Ｑｓ 、 Ｃｆｆ１２等を挙げることができる。特に、
良好なエツチング特性を得る観点から、前記ガスを単独
で使用せずに、それらガスの混合ガス（例えばＢＣｆｆ
ｉｉ ＋Ｃｆｆ１２）が使用されることが望ましい。Examples of the Cl-based gas include CCff1+, BC
Examples include Qs and Cff12. especially,
From the viewpoint of obtaining good etching characteristics, instead of using the above gases alone, a mixed gas of these gases (for example, BCff
ii +Cff12) is preferably used.
上記Ａ℃を主成分とする合金膜としては、例えばＡｆｆ
ｉ−８ｉ合金膜、Ａｆｉ−ＣＬＪ合金膜、ＡＱ−３ｉ−
Ｃｕ合金膜等を挙げることができる。As the alloy film whose main component is A ℃, for example, Aff
i-8i alloy film, Afi-CLJ alloy film, AQ-3i-
Examples include a Cu alloy film.
上記真空チャンバから取出した被エツチング材の熱処理
温度を限定した理由は、その温度を１６０℃未満にする
と、ＡＱＧＱｓ等の反応生成物の昇華除去を充分に行な
うことができなくなる。なお、加熱処理は、真空チャン
バでのエツチング後、反応生成物による再腐蝕が進行し
ない時間以内に行なうことが必要である。通常は、エツ
チング後、５分間以内に前記温度で加熱処理を施すこと
が望ましい。The reason why the heat treatment temperature of the material to be etched taken out from the vacuum chamber is limited is that if the temperature is lower than 160° C., reaction products such as AQGQs cannot be sufficiently removed by sublimation. Note that the heat treatment must be performed within a time after etching in the vacuum chamber so that re-corrosion by reaction products does not proceed. Usually, it is desirable to perform the heat treatment at the above temperature within 5 minutes after etching.
以下、本発明の実施例を第１図を参照して詳細に説明す
る。Hereinafter, embodiments of the present invention will be described in detail with reference to FIG.
第１図は、本発明の実施例に用いる反応性イオンエツチ
ング装置の概略断面図である。図中の１は真空チャンバ
である。このチャンバ１内は、第１、第２の隔！２ａ、
・２ｂが設けられ、該隔壁２ａ、２ｂで分離された前予
備排気室３ａ、エツチングｖ４及び後予備排気ｉ３ｂが
形成されている。FIG. 1 is a schematic cross-sectional view of a reactive ion etching apparatus used in an embodiment of the present invention. 1 in the figure is a vacuum chamber. Inside this chamber 1, there is a first and second gap! 2a,
- 2b is provided, and a front preliminary exhaust chamber 3a, an etching v4 and a rear preliminary exhaust i3b are formed which are separated by the partition walls 2a and 2b.
また、前記チャンバ１の前予備排気室３ａ、後予備排気
室３ｂ及び前記隔壁２ａ、２ｂには、開閉自在な第１〜
第４のシャッタ５ａ〜５ｄが設けられている。また、前
記エツチング至４内には平行して対向する一対の？ｌｉ
６．７が配設されている。Further, the front preliminary exhaust chamber 3a, the rear preliminary exhaust chamber 3b, and the partition walls 2a, 2b of the chamber 1 are provided with first to second chambers that can be opened and closed.
Fourth shutters 5a to 5d are provided. Furthermore, within the etching hole 4, there are a pair of parallel etching holes facing each other. li
6.7 is installed.
この上部電極６は、箱形になっており、前記下部電極７
と対向する面にガスの噴出口（図示せず）が開孔され、
かつ該電極５はガス導入管８と連結されている。このガ
ス導入管８には、反応性ガスとしてのＢＣｆｆ３とＣｌ
１２の混合ガスが供給される。これらガスはマスフロー
により自由に流量を設定できるようにないる。前記上部
Ｎ極６はグランドに接続されている。前記下部Ｎ極７に
は、同電極７を冷却するための冷却水循環配管９が連結
されている。また、前記下部電極７はブロッキングコン
デサ１０、マツチングネットワーク１１及び高周波１ｆ
１１！１２を介してグランドに接続されている。こうし
た高周波％ｉｉｌ！１２から一対の電極６．７の間に高
周波を入力すると、イオンと電子の易動度の差から下部
筒１ｆ！７近傍に自己バイアス電圧（ＶｄＣ）が発生し
、これにより加速されたイオンが下部電極７上の被エツ
チング材に衝突する。前記前予蝿排気至３ａ、エツチン
グ至４及び後予備排気室３ｂに対応する前記真空チャン
バ１の下部には、夫々第１〜第３の排気管１３８〜１３
ｃが連結されている。更に、前記後予備排気室３ｂのシ
ャッタ５ｄ付近には、熱板１４が配設されている。この
熱板１４上方には、底面にガス噴出口１５を開孔した中
空状の容′ｓ１６が配置されており、該容器１６内には
ヒータ１７が挿着されていると共に、乾燥窒素を該容器
１６内に導入するための導入管１８が連結されている。This upper electrode 6 is box-shaped, and the lower electrode 7
A gas outlet (not shown) is opened on the surface facing the
Further, the electrode 5 is connected to a gas introduction pipe 8. This gas introduction pipe 8 contains BCff3 and Cl as reactive gases.
12 mixed gases are supplied. The flow rates of these gases can be freely set by mass flow. The upper N pole 6 is connected to ground. A cooling water circulation pipe 9 for cooling the lower N-electrode 7 is connected to the lower N-electrode 7 . Further, the lower electrode 7 is connected to a blocking capacitor 10, a matching network 11 and a high frequency signal 1f.
It is connected to ground via 11!12. These high frequencies%iil! When a high frequency is input from 12 to the pair of electrodes 6.7, the lower cylinder 1f! due to the difference in mobility between ions and electrons. A self-bias voltage (VdC) is generated near 7, and ions accelerated thereby collide with the material to be etched on the lower electrode 7. First to third exhaust pipes 138 to 13 are provided in the lower part of the vacuum chamber 1 corresponding to the front preliminary exhaust chamber 3a, the etching chamber 4, and the rear preliminary exhaust chamber 3b, respectively.
c are connected. Further, a hot plate 14 is disposed near the shutter 5d of the rear preliminary exhaust chamber 3b. Above the hot plate 14, a hollow container 's16 with a gas outlet 15 in the bottom is arranged. An introduction pipe 18 for introduction into the container 16 is connected.
次に、前述した反応性イオンエツチング装置を用いて本
発明のエツチング方法を説明する。Next, the etching method of the present invention will be explained using the above-mentioned reactive ion etching apparatus.
まず、表面にＡｆｆｉ膜が蒸着され、かつ該ＡＮＩＩＷ
上にレジストパターンが形成されたシリコンウェハ１９
を用意し、このウェハ１９を第１のシャッタ５ａから真
空チャンバ１の前予婦真空室３ａに搬送し、第１のシャ
ッタ５ａを閉じ、第１の排気管１３ａから排気を行なっ
て予備排気した後、第２のシャッタ５ｂを開いてエツチ
ング室４内の下部電極７上にセットした。つづいて、第
２のシャッタ５ｂを閉じた後、ガス導入管８からエツチ
ング室４内にＢＣｆｆｉｉとＣｊ２２（Ｄ混合ガス（１
：１）を１１００８ＣＣ供給すると共に、第２の排気管
１３ｂからエツチング室４内のガスを排気して真空度を
１０ ’ ｔｏｒｒに設定し、同時に高周波電源（１３
，５６ＭＨｚ＞１２から下部電極７に３００Ｗの高周波
電力を印加して、加速されたイオンをウェハ１９のレジ
ストパターンから露出したＡ℃躾に衝突させ、Ａ２膜の
選択エツチングを行なった。ひきつづき、第３の排気管
１３Ｃより排気を行なった状態で第３のシャッタ５Ｃを
開いてエツチング室４内のウェハ１９を後予備排気室３
ｂに搬送した後、第３のシャッタ５Ｃを閉じ、向後予備
排気ｉ３ｂを大気状態とした。この後、直ちに後予備排
気室３ｂの第４のシャッタ５ｄを開いて、向後予備排気
ｖｓｂ内のウェハ１９を取出して１８０’Ｃに加熱され
た熱板１４上に搬送し、同時に導入管１８から乾燥窒素
を中空状容器１６に供給してヒータ１７で１８０℃に加
熱された窒素を容器１６の噴出口１５から熱板１４上の
ウェハ１９に吹付けてた。こうした処理によりエツチン
グ時にウェハ１９に残留したＡｆｆＣｆｆｉｉ等の反応
生成物の蒸気圧が大気圧以上となって昇華除去した。な
お、エツチング後、熱板１４上にウェハ１９を搬送する
までに要した時間は１分間前後であった。First, an Affi film is deposited on the surface, and the ANIIW
Silicon wafer 19 on which a resist pattern is formed
was prepared, the wafer 19 was transferred from the first shutter 5a to the vacuum chamber 3a of the vacuum chamber 1, the first shutter 5a was closed, and the air was evacuated from the first exhaust pipe 13a for preliminary evacuation. Thereafter, the second shutter 5b was opened and set above the lower electrode 7 in the etching chamber 4. Subsequently, after closing the second shutter 5b, BCffii and Cj22 (D mixed gas (1
:1) is supplied at 11,008 CC, the gas in the etching chamber 4 is exhausted from the second exhaust pipe 13b, and the degree of vacuum is set to 10' torr, and at the same time, a high frequency power supply (13'
, 56 MHz>12, a high frequency power of 300 W was applied to the lower electrode 7, and the accelerated ions were made to collide with the A2 layer exposed from the resist pattern of the wafer 19, thereby performing selective etching of the A2 film. Continuing, the third shutter 5C is opened while the third exhaust pipe 13C is being evacuated, and the wafer 19 in the etching chamber 4 is removed from the pre-evacuation chamber 3.
After conveying to the air tank 1, the third shutter 5C was closed, and the preliminary exhaust gas i3b was brought into the atmospheric state. Thereafter, the fourth shutter 5d of the rear preliminary exhaust chamber 3b is immediately opened, and the wafer 19 in the rear preliminary exhaust vsb is taken out and transferred onto the hot plate 14 heated to 180'C. Dry nitrogen was supplied to a hollow container 16, and nitrogen heated to 180° C. by a heater 17 was blown onto the wafer 19 on the hot plate 14 from the jet port 15 of the container 16. Through such processing, the vapor pressure of reaction products such as AffCffii remaining on the wafer 19 during etching became higher than atmospheric pressure, and the reaction products were sublimated and removed. The time required to transfer the wafer 19 onto the hot plate 14 after etching was approximately 1 minute.
しかして、本実施例により処理されたウェハ１ｏｏｍに
ついて、レジストパターンを除去し、加湿加速試験後、
形成されたＡ２配線の断線率を測定した結果、第２図に
示す特性図を得た。また、第２図中には前記反応性イオ
ンエツチングのみを行なうことにより得たウェハ１００
個についての断線率（比較例１）、並びに前記反応性イ
オンエツチング後、ｏ２プラズマ処理を施したウェハ１
００個についてのＡｆｆｉ配線の断線率（比較例２）を
併記した。この第２図より明らかなように本実施例の方
法では、反応性イオンエツチングのみを行なう比較例１
の方法に比べてＡ２配線の断線率を著しく改善できるこ
とがわかる。また、ｏ２プラズマ処理を行なう比較例２
の方法に比べてもＡ２配線の断線率を同等乃至それ以上
改善できることがわかる。但し、本実施例の方法はＱ２
プラズマ処理を一切行なわいため、低コストの反応性イ
オンエツチング装置でＡＲ配線の断線率を改善できると
いう多大なメリットがあると共に、レジストパターンの
除去がなされないため、追加エツチングが可能となる。For 100 wafers processed according to this example, the resist pattern was removed and after an accelerated humidification test,
As a result of measuring the disconnection rate of the formed A2 wiring, a characteristic diagram shown in FIG. 2 was obtained. In addition, in FIG. 2, a wafer 100 obtained by performing only the reactive ion etching is shown.
(Comparative Example 1) and the wafer 1 subjected to O2 plasma treatment after the reactive ion etching.
The disconnection rate of Affi wiring for 00 pieces (Comparative Example 2) is also shown. As is clear from FIG. 2, in the method of this example, comparative example 1 in which only reactive ion etching was performed
It can be seen that the disconnection rate of the A2 wiring can be significantly improved compared to the method described above. In addition, Comparative Example 2 in which O2 plasma treatment is performed
It can be seen that the disconnection rate of the A2 wiring can be improved to the same level or even more than the method described above. However, the method of this example is Q2
Since no plasma processing is performed, there is a great advantage that the disconnection rate of AR wiring can be improved with a low-cost reactive ion etching device, and additional etching is possible because the resist pattern is not removed.
なお、上記実施例で説明した第１図の反応性イオンエツ
チング装置は一例に過ぎず、加熱処理については熱板の
み、又は加熱乾燥窒素のみで行なってもよい。Note that the reactive ion etching apparatus shown in FIG. 1 described in the above embodiment is merely an example, and the heat treatment may be performed using only a hot plate or only heated and dried nitrogen.
以上詳述した如く、本発明によれば０２プラズマを使用
せずに安価な装置で被エツチング材上に残留するＡＱＣ
Ｑ３等の潮解性を有する反応生成物を昇華除去でき、ひ
いては断線のない高信頼性のＡ℃又はＡ１２合金の配線
を低コストで形成し得る等顕著な効果を有する反応性イ
オンエツチング方法を提供できる。As detailed above, according to the present invention, AQC remaining on the material to be etched can be removed using an inexpensive device without using 02 plasma.
To provide a reactive ion etching method which has remarkable effects such as being able to sublimate and remove deliquescent reaction products such as Q3, and forming highly reliable A°C or A12 alloy wiring without disconnection at low cost. can.
第１図は本発明の実施例で使用した反応性イオンエツチ
ング装置の一形態を示す概略断面図、第２図は加湿加速
試験後のＡｆｆｉ配線の断線率を示す特性・図である。
１・・・真空チャンバ、３ａ、３ｂ・・・予備排気至、
４・・・エツチング至、６・・・上部Ｎ極、７・−・下
部電極、１２・・・高周波Ｎ源、１３ａ〜１３Ｃ・・・
排気管、１４・・・熱板、１６・・・中空状容器、１７
・・・ヒータ。FIG. 1 is a schematic cross-sectional view showing one form of a reactive ion etching apparatus used in an example of the present invention, and FIG. 2 is a characteristic diagram showing the disconnection rate of Affi wiring after an accelerated humidification test. 1... Vacuum chamber, 3a, 3b... Preliminary exhaust,
4... To etching, 6... Upper N pole, 7... Lower electrode, 12... High frequency N source, 13a to 13C...
Exhaust pipe, 14... Hot plate, 16... Hollow container, 17
···heater.
Claims (2)
面にＡｌ膜又はＡｌを主成分とする合金膜が被覆された
被エッチング材をエッチングした後、該チャンバから被
エッチング材を取出し、１６０℃以上の温度で熱処理す
ることを特徴とする反応性イオンエッチング方法。(1) After etching the material to be etched whose surface is coated with an Al film or an alloy film mainly composed of Al in a vacuum chamber with plasma of Cl-based gas, take out the material to be etched from the chamber and hold the material at a temperature of 160°C or higher. A reactive ion etching method characterized by heat treatment at a temperature of .
理を、１６０℃以上に加熱した熱板上で行なうことを特
徴とする特許請求の範囲第１項記載の反応性イオンエッ
チング方法。(2) The reactive ion etching method according to claim 1, wherein the material to be etched taken out from the vacuum chamber is heat-treated on a hot plate heated to 160° C. or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59269982A JPH0624190B2 (en) | 1984-12-21 | 1984-12-21 | Wiring formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59269982A JPH0624190B2 (en) | 1984-12-21 | 1984-12-21 | Wiring formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61147530A true JPS61147530A (en) | 1986-07-05 |
| JPH0624190B2 JPH0624190B2 (en) | 1994-03-30 |
Family
ID=17479921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59269982A Expired - Lifetime JPH0624190B2 (en) | 1984-12-21 | 1984-12-21 | Wiring formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0624190B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6415932A (en) * | 1987-07-09 | 1989-01-19 | Nec Corp | Manufacture of semiconductor device |
| JPS6482550A (en) * | 1987-09-25 | 1989-03-28 | Toshiba Corp | Surface treatment |
| WO1992000601A1 (en) * | 1990-06-27 | 1992-01-09 | Fujitsu Limited | Method of manufacturing semiconductor integrated circuit and equipment for the manufacture |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5544794A (en) * | 1978-09-25 | 1980-03-29 | Ibm | Method of stabilizing aluminum conductor circuit |
| JPS5562171A (en) * | 1978-10-31 | 1980-05-10 | Fujitsu Ltd | Reactive sputter-etching method |
| JPS5651580A (en) * | 1979-10-01 | 1981-05-09 | Toshiba Corp | Plasma etching method |
| JPS5753939A (en) * | 1980-09-17 | 1982-03-31 | Matsushita Electric Ind Co Ltd | Dry etching method for thin film |
-
1984
- 1984-12-21 JP JP59269982A patent/JPH0624190B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5544794A (en) * | 1978-09-25 | 1980-03-29 | Ibm | Method of stabilizing aluminum conductor circuit |
| JPS5562171A (en) * | 1978-10-31 | 1980-05-10 | Fujitsu Ltd | Reactive sputter-etching method |
| JPS5651580A (en) * | 1979-10-01 | 1981-05-09 | Toshiba Corp | Plasma etching method |
| JPS5753939A (en) * | 1980-09-17 | 1982-03-31 | Matsushita Electric Ind Co Ltd | Dry etching method for thin film |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6415932A (en) * | 1987-07-09 | 1989-01-19 | Nec Corp | Manufacture of semiconductor device |
| JPS6482550A (en) * | 1987-09-25 | 1989-03-28 | Toshiba Corp | Surface treatment |
| WO1992000601A1 (en) * | 1990-06-27 | 1992-01-09 | Fujitsu Limited | Method of manufacturing semiconductor integrated circuit and equipment for the manufacture |
| US5397432A (en) * | 1990-06-27 | 1995-03-14 | Fujitsu Limited | Method for producing semiconductor integrated circuits and apparatus used in such method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0624190B2 (en) | 1994-03-30 |
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