JPS61123814A - optical isolator - Google Patents
optical isolatorInfo
- Publication number
- JPS61123814A JPS61123814A JP24444384A JP24444384A JPS61123814A JP S61123814 A JPS61123814 A JP S61123814A JP 24444384 A JP24444384 A JP 24444384A JP 24444384 A JP24444384 A JP 24444384A JP S61123814 A JPS61123814 A JP S61123814A
- Authority
- JP
- Japan
- Prior art keywords
- optical isolator
- hgte
- optical
- cdte
- mnte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims description 50
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000013078 crystal Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 13
- 229910004613 CdTe Inorganic materials 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 238000010587 phase diagram Methods 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims 4
- 229910045601 alloy Inorganic materials 0.000 claims 4
- 238000010586 diagram Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910017231 MnTe Inorganic materials 0.000 description 2
- 239000003708 ampul Substances 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は光通信に用いられる光アイソレータおよび、光
アイソレータ、半導体レーザ、半導波路を複合化した薄
［ｉ４子の構造とその構造に有用な磁性半導体材料に関
する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to an optical isolator used in optical communication, a structure of a thin quadrupole which is a composite of an optical isolator, a semiconductor laser, and a semi-waveguide, and a structure useful for the structure. Concerning magnetic semiconductor materials.
進んでおり、光部品の小型化、高信頼化に対する要求が
増している６光通信システムの中で光アイソレータはレ
ーザ光源の安定化を図る上で重要な役割を担っている。Optical isolators play an important role in stabilizing laser light sources in six-optical communication systems, where there is an increasing demand for smaller optical components and higher reliability.
光アイソレータは、第１図の基本構成図に示したように
、ファラデー回転効果を有する光磁気材料が使用される
。偏光子２により、直線偏光になつたレーザ光３は、直
流磁界下に置かれた光アイソレータ１を通過する間に４
５°偏光面が回転する。検光子４の偏光面を４５＠にす
れば、レーザ５から出た光は検光子４を通過することが
できる。As shown in the basic configuration diagram of FIG. 1, the optical isolator uses a magneto-optical material having a Faraday rotation effect. The laser beam 3, which has become linearly polarized by the polarizer 2, is polarized while passing through the optical isolator 1 placed under a DC magnetic field.
The plane of polarization rotates by 5°. If the polarization plane of the analyzer 4 is set to 45@, the light emitted from the laser 5 can pass through the analyzer 4.
しかし、光ファイバなどの端面で反射した。逆方向のレ
ーザ光６は、光アイソレータ１により。However, it was reflected by the end face of the optical fiber. The laser beam 6 in the opposite direction is transmitted by the optical isolator 1.
９０”に偏光面が回転し、偏光子２を通過することはで
きず、レーザ５には戻らない、そのため、レーザ５の安
定が保た九る。これまで、光アイソ、 レータにはバ
ルクのイツトリウム・鉄、ガーネット（Ｙ、 Ｆ ａ、
ｏｌ、 ： Ｙ Ｉ Ｇ）単結晶が使われてきたが、装
置の小型化、高信頼化のために薄膜型光アイソレータの
開発［たとえば、滝、宮崎、赤尾。The plane of polarization rotates to 90", cannot pass through the polarizer 2, and does not return to the laser 5. Therefore, the stability of the laser 5 is maintained. Until now, optical isolators and Yztrium/iron, garnet (Y, F a,
ol, : Y I G) single crystals have been used, but in order to make the device smaller and more reliable, thin film type optical isolators have been developed [e.g. Taki, Miyazaki, Akao et al.
信学技報Ｍ Ｗ２Ｏ−９５（１９８１） ］が行われて
いる。さらに、■−■族化合物半導体との一体化も考え
られている。IEICE Technical Report M W2O-95 (1981)]. Furthermore, integration with ■-■ group compound semiconductors is also being considered.
しかしながら、ガーネットと■−■族化合物は結晶構造
、熱膨張係数が違っており、ガーネットと■−ｖ族化合
物の一体化は薄膜中にひずみを発生させる原因になり易
い、光アイソレータ中にひずみがあると光は楕円偏光し
、アイソレーションが困難になる場合がある。他方、■
−ｖ族化合物と同じＺｎＳ型結晶構造をもつＣｄＴｅの
Ｃｄの一部をＭｎに置換したＣ ｄ Ｌ−ＸＭ ｎ ｚ
Ｔ ｅは大きなベルデ定数を持つ材料で、可視光波長〜
０．６μｍに対する光アイソレータとして有望な材料で
ある（Ａ、Ｅ、Ｔｕｒｎａｒ ｅｔ、ａｌ、Ａｐｐｌｉ
ａｄ ０ｐｔｉｃｓ ２２（１９８３）３１５２） 。However, garnet and ■-■ group compounds have different crystal structures and coefficients of thermal expansion, and the integration of garnet and ■-v group compounds tends to cause strain in the thin film, and strain in the optical isolator. If so, the light becomes elliptically polarized, making isolation difficult. On the other hand,■
- C d L-XM n z in which part of the Cd of CdTe which has the same ZnS type crystal structure as the V group compound is replaced with Mn
Te is a material with a large Verdet constant, visible light wavelength ~
It is a promising material as an optical isolator for 0.6 μm (A, E, Turnar et al, Appli
ad Optics 22 (1983) 3152).
現在、光ファイバを通しての光通信は石英系光ファイバ
の透過率が高い、波長範囲が０．８〜１．５ μｍの光
によって行われている。長波長の光をＣｄｔ−ｘＭｎ、
Ｔｅに適用した場合、ベルデ定数は１０−” ” ／ｌ
：５−ＣＪ以下に小さくなり、光アイソレータとして有
用でなくなる。そのため、ＺｎＳ型結晶構造を有し、波
長０．８〜１．５μｍの光に対して高いベルデ定数を有
する光アイソレータ用材料が必要であった。Currently, optical communications through optical fibers are performed using light in the wavelength range of 0.8 to 1.5 μm, which has high transmittance through silica-based optical fibers. Long wavelength light is Cdt-xMn,
When applied to Te, the Verdet constant is 10−” ”/l
:5-CJ or less, and is no longer useful as an optical isolator. Therefore, there was a need for an optical isolator material that has a ZnS type crystal structure and a high Verdet constant for light with a wavelength of 0.8 to 1.5 μm.
本発明の目的は波長０．８〜１．５μｍの光に対する光
アイソレータとして用いるに特に有用なファラデー効果
を有する磁性半導体材料を提供するものである０本発明
になる磁性半導体材料を用いることによって、バルクの
単結晶を用いた光アイソレータに加えて、半導体レーザ
等の光部品との一体化を目的とする複合ｗ１１１１１構
造をも実視することが出来る。An object of the present invention is to provide a magnetic semiconductor material having a Faraday effect that is particularly useful for use as an optical isolator for light with a wavelength of 0.8 to 1.5 μm.By using the magnetic semiconductor material of the present invention, In addition to optical isolators using bulk single crystals, you can also see composite w11111 structures intended for integration with optical components such as semiconductor lasers.
ベルデ定数は光の吸収端近傍で大きくなるため、波長０
．８〜１．５μｍの光に適合する光アイソレータ材料を
提供するには、材料のバンドギャップエネルギは０．９
〜０．６ｅＶであることが望ましい１本発明ではＣｄ
ｘ−ＸＭ ｎ ｘ Ｔ ｅにＨｇ Ｔ ｅを合金化させ
ることにより、バンドギャップエネルギのｌ［１１を図
るとともに、ベルデ定数が大きくなる組成を見い出した
実験結果に基づいている。The Verdet constant becomes large near the absorption edge of light, so at wavelength 0
．． To provide an optical isolator material compatible with light between 8 and 1.5 μm, the bandgap energy of the material should be 0.9
In the present invention, Cd
This is based on the experimental results of finding a composition in which the bandgap energy is increased to 11 by alloying x-XM n x Te with Hg Te, and the Verdet constant is increased.
また、他の光部品との一体化のために、■−■族化合物
半導体単結晶基板上へのエピタキシャル成長を行い、薄
膜型光アイソレータを作製した。In addition, for integration with other optical components, epitaxial growth was performed on a single crystal substrate of a compound semiconductor of the ■-■ group, and a thin-film optical isolator was fabricated.
■−ｖ族化合物半導体結晶としては、ＩｎＰ。(2) InP is an example of the V-group compound semiconductor crystal.
ＧａＡｓ等が代表的なものである。A typical example is GaAs.
マス、組成の選択について述べる。The selection of mass and composition will be described.
第２図の３元系の相図中の丸印で示した組成の結晶をブ
リッジマン法で作製した。ｃｄＴａ＊ＭｎＴｅ、ＨｇＴ
ｅをそれぞれの組成比で石英アンプル中に配合し、真空
封入した。加熱時に蒸気圧が高くなるため、石英アンプ
ルは３重にした。Crystals having the compositions indicated by circles in the ternary phase diagram of FIG. 2 were produced by the Bridgman method. cdTa*MnTe, HgT
e were blended into quartz ampoules at their respective composition ratios and vacuum sealed. Since the vapor pressure increases during heating, the quartz ampoule was made in three layers.
この石英アンプルをたて型電気炉中に入れ、加熱溶融後
、約３時間保持したのち、石英アンプルを徐々に降下さ
せ′、石英アンプルの低温部の一端から結晶化させた０
作製した結晶（直径１０■、長さ３０■）は多くの場合
、多結晶であったが、結晶粒径は数Ｉで光学測定に使用
することができた。This quartz ampoule was placed in a vertical electric furnace, heated and melted, and held for approximately 3 hours.
The produced crystals (diameter 10 cm, length 30 cm) were often polycrystalline, but the crystal grain size was several I and could be used for optical measurements.
結晶の長さ方向の中央部から厚さ１ｍの試料を切り出し
、光の透過率を測定した。A sample with a thickness of 1 m was cut out from the center in the longitudinal direction of the crystal, and the light transmittance was measured.
第２図の記号７の組成はＭ ｎ Ｔ ｅが析出し、２相
になったが、他の組成の結晶はＨｇＣｄＭｎｘＴｅと同
じＺｎＳ型結晶構造の単−相であった。記号７の組成を
除く組成の試料について測定したバンドギャップエネル
ギの値を第３図に示す。次に各試料のベルデ定数を波長
０．８．１．３，１．５ μｍの光で測定した。波長
０．８ μｍ、１．３ μｍの光に対する室温での
ベルデ定数の値をそれぞれ、第４図および第５図に示す
、単位は＠／ａｌｌ−Ｇである。ベルデ定数の値はＭｎ
の量にはあまり依存せず、バンドギャップエネルギの大
きさに強く依存した。ベルデ定数が０．１″／ａｌ−Ｇ
より小さい場合、光アイソレータを作るために必要な厚
さは１ｋＧの磁界の下で４．５ ｍになる。これは光吸
収損失を大きくする原因となり実用的ではない。In the composition indicated by symbol 7 in FIG. 2, MnTe precipitated and became a two-phase crystal, but the crystals with other compositions were single-phase with the same ZnS type crystal structure as HgCdMnxTe. FIG. 3 shows the band gap energy values measured for samples with compositions other than the composition of symbol 7. Next, the Verdet constant of each sample was measured using light with wavelengths of 0.8, 1.3, and 1.5 μm. The values of the Verdet constant at room temperature for light with wavelengths of 0.8 μm and 1.3 μm are shown in FIGS. 4 and 5, respectively, and the unit is @/all-G. The value of Verdet constant is Mn
It did not depend much on the amount of , but strongly depended on the size of the band gap energy. Verdet constant is 0.1″/al-G
In the smaller case, the thickness required to make an optical isolator would be 4.5 m under a 1 kG magnetic field. This causes increased light absorption loss and is not practical.
そのため、実用に供する波長１．３ μｍの光アイソレ
ータ材料は第４および５図の白丸で示したものである。Therefore, optical isolator materials with a wavelength of 1.3 .mu.m for practical use are those shown by white circles in FIGS. 4 and 5.
一方、光が透過しない試料は黒丸で示しである。On the other hand, samples through which no light passes are indicated by black circles.
次に波長１．５ μｍの光に対するベルデ定数の値を第
６図に示す。０．１°／ａｌ−０以上の値を有する組成
を白丸で示した。Next, FIG. 6 shows the value of the Verdet constant for light with a wavelength of 1.5 μm. Compositions having values of 0.1°/al-0 or more are indicated by white circles.
第４図〜第６図に示した結果から、０．８〜もつ単結晶
が適していることが分る。From the results shown in FIGS. 4 to 6, it can be seen that single crystals with a diameter of 0.8 or more are suitable.
以下１本発明の実施例を示す。 An example of the present invention will be shown below.
実施例 Ｉ
Ｈｇａ、４ｃ ｄｎ、４Ｍ ｎｏ、、Ｔ ｅ の組成
をもつ単結晶をブリッジマン法によって育成した。育成
法は発明の概要に述べた通りである。育成した単結晶（
直径／ Ｏｍ、長さ３０厘）より（１１０）ｉｌｉが端
面になるように直径５ｍ、厚さ２．４ ｍの円板状の
試料を作製した。第１図に示した構造の光アイソレータ
を作製し、磁場を７００Ｇ印加したところ、波長１．３
μｍのレーザ光に対して、４５６のファラデー回転が得
られ、アイソレーション２０ｄＢが達成された。光の吸
収による挿入損失は１ｄＢで光アイソレータとして十分
に使えることが明らかになった。Example I A single crystal having a composition of Hga, 4c dn, 4M no, T e was grown by the Bridgman method. The breeding method is as described in the summary of the invention. The grown single crystal (
A disk-shaped sample with a diameter of 5 m and a thickness of 2.4 m was prepared so that (110) ili was the end face. When an optical isolator with the structure shown in Figure 1 was fabricated and a magnetic field of 700 G was applied, the wavelength was 1.3.
A Faraday rotation of 456 was obtained for a μm laser beam, and an isolation of 20 dB was achieved. It has been revealed that the insertion loss due to light absorption is 1 dB, which is sufficient for use as an optical isolator.
実施例 ２
Ｈｇ、、、ｃ ｄ、、ｓＭ ｎ、、、、Ｔ ｅ の組
成をもつ単結晶を実施例１と同様にブリッジマを法によ
って育成した。これより、（１１０）面を端面とする直
径５ｍ、厚さ１．２５ ｍの円板を作製した６波長１．
３ μｍのレーザ光を４５＠回転させるためには１．５
ｋＧの磁場を必要としたが、光の透過率は高く、挿
入損失は１．２ ｄＢで抑えられた。その結果、光ア
イソレータとして十分に使えることが確認できた。Example 2 A single crystal having a composition of Hg, c d, sM n, . From this, a disk with a diameter of 5 m and a thickness of 1.25 m with (110) plane as the end face was fabricated with 6 wavelengths 1.
1.5 to rotate a 3 μm laser beam by 45
Although a kG magnetic field was required, the optical transmittance was high and the insertion loss was suppressed to 1.2 dB. As a result, it was confirmed that it could be used satisfactorily as an optical isolator.
に示すようにＩｎＰ基板９上に形成し、当該半導体レー
ザ８をホトレジストで覆った。その後。The semiconductor laser 8 was formed on an InP substrate 9 as shown in FIG. 2, and the semiconductor laser 8 was covered with photoresist. after that.
ＭＢＥ（分子線エピタキシィ）法でＨｇ＋Ｃｄ、Ｍｎ。Hg+Cd, Mn using MBE (molecular beam epitaxy) method.
Ｔｅを同時蒸着した。各元素はクヌーセンセル（Ｈｇ、
Ｃｄ、Ｔｅ）および電子ビームハース（Ｍｎ）から同時
に蒸着した。その際蒸着速度を予め測定し、膜組成がＨ
ｇｏ、４ｃ ｄ、、４Ｍ ｎｏ、、Ｔ ｅ になるよ
うにクヌーセンセルの温度と電子ビームの電流値を保持
した。基板温度は２００℃、成長速度は０．３重ｍ／ｓ
であった。ＩｎＰと（ＨｇＣｄＭｎ）Ｔｅでは格子定数
に違いがあるが、（１００）ＩｎＰ基板上に膜はエピタ
キシャル成長し、膜厚５．５ μｍの単結晶膜になった
。ホトリソグラフィとアルゴンイオンミリングにより幅
５０μｍ、長さ１．６悶の薄膜型の光アイソレータ１０
を作製した。さらに金属膜を用いた偏光子を形成した半
導体レーザと光アイソレータを同一基板上にモノリシッ
ク化したものを磁場中に入れ、レーザ発振を行わせた。Te was co-evaporated. Each element is a Knudsen cell (Hg,
Cd, Te) and electron beam hearth (Mn) were deposited simultaneously. At that time, the deposition rate was measured in advance, and the film composition was determined to be H.
The temperature of the Knudsen cell and the current value of the electron beam were maintained so that go, 4c d, 4M no, , T e . Substrate temperature is 200℃, growth rate is 0.3 m/s
Met. Although there is a difference in lattice constant between InP and (HgCdMn)Te, the film was epitaxially grown on the (100) InP substrate, resulting in a single crystal film with a thickness of 5.5 μm. A thin-film optical isolator 10 with a width of 50 μm and a length of 1.6 μm was created by photolithography and argon ion milling.
was created. Furthermore, a monolithic semiconductor laser with a metal film polarizer and an optical isolator on the same substrate was placed in a magnetic field to cause laser oscillation.
その結果、導波路を形成しないにもかかわらず、レーザ
光の入出射端面および、アイソレータ中での散乱損失は
少なく、挿入損失は２ｄＢであった。As a result, even though no waveguide was formed, the scattering loss at the input/output end face of the laser beam and in the isolator was small, and the insertion loss was 2 dB.
実施例 ４
実施例３と同じプロセスに従い、Ｇ ａ Ａ ｓ基板上
に波長０．８３ μｍの半導体レーザを作製したのち、
Ｈｇａ、ｘｃ ｄｏ、ｓＭ ｎａ、３Ｔ ｅ の組成
をもつ薄膜を同一基板上に形成した。幅５０μｍ、長さ
１．６ 閣の島状光アイソレータを加工形成した結果、
０．８８ ｋＧの磁場のもとて１５ｄＢのアイソレー
ションが達成された。その際の挿入損失は２．５ｄＢで
あった。Example 4 Following the same process as Example 3, a semiconductor laser with a wavelength of 0.83 μm was fabricated on a GaAs substrate.
Thin films having compositions of Hga, xc do, sM na, and 3T e were formed on the same substrate. As a result of processing and forming an island-shaped optical isolator with a width of 50 μm and a length of 1.6 mm,
An isolation of 15 dB was achieved under a magnetic field of 0.88 kG. The insertion loss at that time was 2.5 dB.
本発明によれば実用上有用な波長０．８〜１．５μｍの
レーザ光に対する挿入損失が小さく、かっアイソレーシ
ョンの優れた光アイソレータが作製できる。また、ｍ−
ｖ族化合物半導体上にエピタキシャル成長させ、半導体
レーザと光アイソレータを一体化することができるため
、光部品としての信頼性が高くなる。すなわち、半導体
レーザと光アイソレータの個別部品を１つの基板上に接
着した場合には、温度変動によって各部分の距離が変化
するなどの現象が生じる。これに対して、モノリシック
化することによって、これらの変動要因が除去できる。According to the present invention, an optical isolator with low insertion loss and excellent isolation for a practically useful laser beam having a wavelength of 0.8 to 1.5 μm can be manufactured. Also, m-
Since the semiconductor laser and the optical isolator can be integrated by epitaxial growth on a V group compound semiconductor, the reliability as an optical component is increased. That is, when separate parts such as a semiconductor laser and an optical isolator are bonded onto one substrate, phenomena such as the distance between the parts change due to temperature fluctuations occur. On the other hand, by making it monolithic, these fluctuation factors can be removed.
第１図はレーザと光アイソレータからなる光部品の構成
を示す図、第２図はＨｇ Ｔ ｅ −Ｍ ｎ Ｔ ｅＣ
ａ Ｔ ｅの３元系相図、第３図は（Ｈｇ−Ｍｎ・Ｃｄ
）Ｔｅの各試料のバンドギャップエネルギを示す図、第
４Ｗ１は（Ｈｇ ＝Ｍｎ−Ｃｄ）Ｔｅの各科の波長１゜
３ μｍの光に対するベルデ定数を示す図、第６図は（
Ｈｇ−Ｍｎ−Ｃｄ）Ｔｓの各試料の波長１．５ μｍの
光に対するベルデ定数を示？
を示す図、第１図は半導体レーザと光アイソレータをモ
ノリシック化した光部品の構造を示す図である。
１・・・光アイソレータ、２・・・偏光子、３・・・レ
ーザ光、４・・・検光子、５・・・レーザ、６・・・レ
ーザ光、７・・・２相になった組成、８・・・半導体レ
ーザ、９・・・ＩｎＰ不１図
１図Ｚ 図
トＬｈＴｅ （Ａｔｏｍ（、％〕
第 ３ 図
ｎｏｔｅ ｕＬＩｍｒｃ ％ノ
冨 ５ 図Figure 1 is a diagram showing the configuration of an optical component consisting of a laser and an optical isolator, and Figure 2 is a diagram showing the configuration of an optical component consisting of a laser and an optical isolator.
The ternary system phase diagram of a T e, Figure 3 is (Hg-Mn・Cd
) A diagram showing the bandgap energy of each sample of Te, 4th W1 is a diagram showing the Verdet constant for each family of (Hg = Mn-Cd)Te for light with a wavelength of 1°3 μm, and Figure 6 is (
Show the Verdet constant for light with a wavelength of 1.5 μm for each sample of Hg-Mn-Cd)Ts? FIG. 1 is a diagram showing the structure of an optical component in which a semiconductor laser and an optical isolator are made monolithic. 1... Optical isolator, 2... Polarizer, 3... Laser light, 4... Analyzer, 5... Laser, 6... Laser light, 7... Two phases now Composition, 8...Semiconductor laser, 9...InP
Claims (1)
を特徴とするファラデー効果を有する磁性半導体材料。 ２、前記ＭｎＴｅ−ＨｇＴｅ−ＣｄＴｅ系合金は、Ｍｎ
Ｔｅ−ＨｇＴｅ−ＣｄＴｅ３元系相図において、Ｍｎ＿
０＿．＿１Ｈｇ＿０＿．＿２Ｃｄ＿０＿．＿７Ｔｅ、Ｍ
ｎ＿０＿．＿１Ｈｇ＿０＿．＿４Ｃｄ＿０＿．＿５Ｔｅ
、Ｍｎ＿０＿．＿３、Ｈｇ＿０＿．＿４Ｃｄ＿０＿．＿
３Ｔｅ、Ｍｎ＿０＿．＿４Ｈｇ＿０＿．＿２Ｃｄ＿０＿
．＿４Ｔｅ、Ｍｎ＿０＿．＿４Ｈｇ＿０＿．＿１Ｃｄ＿
０＿．＿５Ｔｅ、Ｍｎ＿０＿．＿２、Ｈｇ＿０＿．＿１
Ｃｄ＿０＿．＿７Ｔｅの６点に囲まれる範囲に組成にも
つことを特徴とする特許請求の範囲第１項記載の磁性半
導体材料。 ３、前記ＭｎＴｅ−ＨｇＴｅ−ＣｄＴｅ磁性半導体層は
III−Ｖ族化合物半導体基板上にエピタキシャル成長に
て形成されたことを特徴とする特許請求の範囲第１項又
は第２項記載の磁性半導体材料。 ４、前記III−Ｖ族化合物半導体基板がＩｎＰ結晶より
成ることを特徴とする特許請求の範囲第３項記載の磁性
半導体材料。 ５、前記III−Ｖ族化合物半導体基板がＧａＡｓ結晶よ
り成ることを特徴とする特許請求の範囲第３項記載の磁
性半導体材料。 ６、ＭｎＴｅ−ＨｇＴｅ−ＣｄＴｅ系合金を用いて構成
されたことを特徴とする光アイソレータ。 ７、前記ＭｎＴｅ−ＨｇＴｅ−ＣｄＴｅ系合金は、Ｍｎ
Ｔｅ−ＨｇＴｅ−ＣｄＴｅ３元系相図において、Ｍｎ＿
０＿．＿１Ｈｇ＿０＿．＿２Ｃｄ＿０＿．＿７Ｔｅ、Ｍ
ｎ＿０＿．＿１Ｈｇ＿０＿．＿４Ｃｄ＿０＿．＿５Ｔｅ
、Ｍｎ＿０＿．＿３Ｈｇ＿０＿．＿４Ｃｄ＿０＿．＿３
Ｔｅ、Ｍｎ＿０＿．＿４Ｈｇ＿０＿．＿２Ｃｄ＿０＿．
＿４Ｔｅ、Ｍｎ＿０＿．＿４Ｈｇ＿０＿．＿１Ｃｄ＿０
＿．＿５Ｔｅ、Ｍｎ＿０＿．＿２Ｈｇ＿０＿．＿１Ｃｄ
＿０＿．＿７Ｔｅの６点に囲まれた範囲に組成をもつこ
とを特徴とする特許請求の範囲第６項記載の光アイソレ
ータ。 ８、前記ＭｎＴｅ−ＨｇＴｅ−ＣｄＴｅ磁性半導体層は
III−Ｖ族化合物半導体基板上にエピタキシャル成長に
て形成されたことを特徴とする特許請求の範囲第７項記
載の光アイソレータ。 ９、前記III−Ｖ族化合物半導体基板がＩｎＰ結晶より
成ることを特徴とする特許請求の範囲第８項記載の光ア
イソレータ。 １０、前記III−Ｖ族化合物半導体基板がＧａＡｓ結晶
より成ることを特徴とする特許請求の範囲第８項記載の
光アイソレータ。[Claims] 1. A magnetic semiconductor material having a Faraday effect, characterized by being made of a MnTe-HgTe-CdTe alloy. 2. The MnTe-HgTe-CdTe alloy has Mn
In the Te-HgTe-CdTe ternary system phase diagram, Mn_
0__. _1Hg_0_. _2Cd_0_. ＿7Te, M
n_0_. _1Hg_0_. _4Cd_0_. _5Te
, Mn_0_. _3, Hg_0_. _4Cd_0_. ＿
3Te, Mn_0_. _4Hg_0_. _2Cd_0_
．． _4Te, Mn_0_. _4Hg_0_. _1Cd_
0__. _5Te, Mn_0_. _2, Hg_0_. ＿１
Cd_0_. The magnetic semiconductor material according to claim 1, characterized in that the magnetic semiconductor material has a composition within a range surrounded by six points of _7Te. 3. The MnTe-HgTe-CdTe magnetic semiconductor layer is
The magnetic semiconductor material according to claim 1 or 2, characterized in that it is formed by epitaxial growth on a III-V group compound semiconductor substrate. 4. The magnetic semiconductor material according to claim 3, wherein the III-V group compound semiconductor substrate is made of InP crystal. 5. The magnetic semiconductor material according to claim 3, wherein the III-V compound semiconductor substrate is made of GaAs crystal. 6. An optical isolator characterized by being constructed using a MnTe-HgTe-CdTe alloy. 7. The MnTe-HgTe-CdTe alloy has Mn
In the Te-HgTe-CdTe ternary system phase diagram, Mn_
0__. _1Hg_0_. _2Cd_0_. ＿7Te, M
n_0_. _1Hg_0_. _4Cd_0_. _5Te
, Mn_0_. _3Hg_0_. _4Cd_0_. ＿３
Te, Mn_0_. _4Hg_0_. _2Cd_0_.
_4Te, Mn_0_. _4Hg_0_. _1Cd_0
＿． _5Te, Mn_0_. _2Hg_0_. _1Cd
＿0＿． The optical isolator according to claim 6, characterized in that the optical isolator has a composition within a range surrounded by six points of _7Te. 8. The MnTe-HgTe-CdTe magnetic semiconductor layer is
8. The optical isolator according to claim 7, wherein the optical isolator is formed by epitaxial growth on a III-V group compound semiconductor substrate. 9. The optical isolator according to claim 8, wherein the III-V group compound semiconductor substrate is made of InP crystal. 10. The optical isolator according to claim 8, wherein the III-V compound semiconductor substrate is made of GaAs crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24444384A JPS61123814A (en) | 1984-11-21 | 1984-11-21 | optical isolator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24444384A JPS61123814A (en) | 1984-11-21 | 1984-11-21 | optical isolator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61123814A true JPS61123814A (en) | 1986-06-11 |
| JPH0576611B2 JPH0576611B2 (en) | 1993-10-25 |
Family
ID=17118726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24444384A Granted JPS61123814A (en) | 1984-11-21 | 1984-11-21 | optical isolator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61123814A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4932760A (en) * | 1988-02-26 | 1990-06-12 | Mitsubishi Gas Chemical Company, Inc. | Magneto-optic garnet |
| US5245465A (en) * | 1990-08-04 | 1993-09-14 | Canon Kabushiki Kaisha | Optical polarization-state converting apparatus for use as isolator, modulator and the like |
| WO1994017437A1 (en) * | 1993-01-25 | 1994-08-04 | Tokin Corporation | Magneto-optical element |
| JPH06222310A (en) * | 1993-01-25 | 1994-08-12 | Tokin Corp | Magneto-optical element |
| JPH06222309A (en) * | 1993-01-25 | 1994-08-12 | Tokin Corp | Magneto-optical element |
| WO1995017538A1 (en) * | 1993-12-22 | 1995-06-29 | Tokin Corporation | Magneto-optical device and method for production thereof |
| US5790299A (en) * | 1995-12-15 | 1998-08-04 | Optics For Research | Optical isolator employing a cadmium-zinc-tellurium composition |
-
1984
- 1984-11-21 JP JP24444384A patent/JPS61123814A/en active Granted
Non-Patent Citations (2)
| Title |
|---|
| APPLIED OPTICS=1983 * |
| PHYS.STAT.SOL.64707=1981 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4932760A (en) * | 1988-02-26 | 1990-06-12 | Mitsubishi Gas Chemical Company, Inc. | Magneto-optic garnet |
| US5245465A (en) * | 1990-08-04 | 1993-09-14 | Canon Kabushiki Kaisha | Optical polarization-state converting apparatus for use as isolator, modulator and the like |
| WO1994017437A1 (en) * | 1993-01-25 | 1994-08-04 | Tokin Corporation | Magneto-optical element |
| JPH06222310A (en) * | 1993-01-25 | 1994-08-12 | Tokin Corp | Magneto-optical element |
| JPH06222309A (en) * | 1993-01-25 | 1994-08-12 | Tokin Corp | Magneto-optical element |
| US5596447A (en) * | 1993-01-25 | 1997-01-21 | Tokin Corporation | Magnetooptical element |
| WO1995017538A1 (en) * | 1993-12-22 | 1995-06-29 | Tokin Corporation | Magneto-optical device and method for production thereof |
| US5790299A (en) * | 1995-12-15 | 1998-08-04 | Optics For Research | Optical isolator employing a cadmium-zinc-tellurium composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0576611B2 (en) | 1993-10-25 |
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