JPS6047981B2 - Jig for detecting internal temperature of horizontal heat treatment furnace - Google Patents
Jig for detecting internal temperature of horizontal heat treatment furnaceInfo
- Publication number
- JPS6047981B2 JPS6047981B2 JP6233478A JP6233478A JPS6047981B2 JP S6047981 B2 JPS6047981 B2 JP S6047981B2 JP 6233478 A JP6233478 A JP 6233478A JP 6233478 A JP6233478 A JP 6233478A JP S6047981 B2 JPS6047981 B2 JP S6047981B2
- Authority
- JP
- Japan
- Prior art keywords
- wafers
- jig
- heat treatment
- temperature
- dummy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
- Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
Description
【発明の詳細な説明】
本発明は横型熱処理炉内温度検出用治具に関するものて
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a jig for detecting temperature inside a horizontal heat treatment furnace.
半導体ウエハヘの不純物の拡散処理方法として、横型熱
処理炉の内部に複数の半導体ウェハを直立させた状態て
配列設置し、その状態て不純物ガスを炉内に導入して拡
散処理する方法がある。As a method for diffusing impurities into semiconductor wafers, there is a method in which a plurality of semiconductor wafers are arranged in an upright manner inside a horizontal heat treatment furnace, and impurity gas is introduced into the furnace to perform the diffusion treatment.
ところで、このような横型熱処理炉の内部は必ずしも温
度分布が均一でない。熱処理において処理温度が品質を
決定する一つの重要な要素であり、品質管理上炉内の温
度分布状態を正確に把握することが必要である。そして
、従来における熱処理炉内の温度検出は炉の底部に熱電
対を入れた石英細管を置き、その細管又は熱電対を移動
させることにより行つていた。By the way, the temperature distribution inside such a horizontal heat treatment furnace is not necessarily uniform. In heat treatment, treatment temperature is one important factor that determines quality, and it is necessary to accurately understand the temperature distribution state in the furnace for quality control. Conventionally, temperature inside a heat treatment furnace has been detected by placing a quartz tube containing a thermocouple at the bottom of the furnace and moving the tube or thermocouple.
しかし、熱処理炉内の温度状態は、内部に被処理体であ
る半導体ウェハ及びウェハ保持治具があるときとないと
きとで異なり、品質管理において把握しなければならな
いのは炉内に半導体ウェハにウェハ及びウェハ保持治具
があるときの温度状態であるにも拘らず従来においては
炉内にウェハ等がない状態の温度分布しか行つていなか
つた。したがつて本発明は半導体ウェハ及びウェハ保持
具が横型熱処理炉内に挿入されたと同じ条件で炉内温度
を測定することのできる治具を提供する・ことを目的と
するものである。However, the temperature inside the heat treatment furnace differs depending on whether there are semiconductor wafers to be processed and a wafer holding jig inside, and it is important to know for quality control whether there are semiconductor wafers inside the furnace or not. Although this is the temperature state when there are wafers and wafer holding jigs, conventionally the temperature distribution has only been carried out when there are no wafers or the like in the furnace. Therefore, it is an object of the present invention to provide a jig that can measure the temperature inside a horizontal heat treatment furnace under the same conditions as when a semiconductor wafer and a wafer holder are inserted into the horizontal heat treatment furnace.
上記目的を達成するための本発明の一実施態様は、複数
のウェハを直立させかつそのウェハ主面と垂直方向に配
列するウェハホルダーを内部に入れた状態で熱処理する
横型熱処理する横型熱処理フ炉の内部温度検出用治具に
おいて、上記ウェハホルダーと同じ熱伝導性を有しかつ
複数のウェハを直立させそのウェハ主面と垂直方向に配
列させた状態で保持することのできるダミーホルダ、こ
のダミーホルダの各保持部に保持された上記ウェハ5と
ほぼ同じ形状と熱伝導性を有する複数のダミーウェハ及
び、複数のダミーウェハの主面と垂直方向でダミーウェ
ハに保持されるような状態で取り付けられる石英細管か
ら成り、この細管に熱電対温度検知具が内蔵されるよう
になつていることを特徴とする。One embodiment of the present invention to achieve the above object is a horizontal heat treatment furnace in which a plurality of wafers are heat-treated in a state in which the wafers are stood upright and are housed with wafer holders arranged perpendicularly to the main surfaces of the wafers. In the internal temperature detection jig, a dummy holder that has the same thermal conductivity as the wafer holder and can hold a plurality of wafers upright and arranged in a direction perpendicular to the main surface of the wafers; It consists of a plurality of dummy wafers having almost the same shape and thermal conductivity as the wafer 5 held in each holding part, and a quartz tube attached to the dummy wafer in a direction perpendicular to the main surface of the plurality of dummy wafers. , is characterized in that the thin tube has a built-in thermocouple temperature detection device.
以下本発明を実施例により説明する。The present invention will be explained below with reference to Examples.
第1図乃至第3図は本発明の一実施例を示すもので、第
1図が温度測定状態における熱処理炉の要部断面図、第
2図が温度検出用治具の正面図、第3図が温度検出用治
具の斜視図である。1はダミーウェハを直立した状態で
保持するダミーホルダー、2はダミーウェハ(例えば半
導体ウェハ)でダミーホルダー1に保持されその中心部
には石英細管を通すための孔が設けられている。Figures 1 to 3 show one embodiment of the present invention, in which Figure 1 is a sectional view of the main part of the heat treatment furnace in a temperature measuring state, Figure 2 is a front view of the temperature detection jig, and Figure 3 is a front view of the temperature detection jig. The figure is a perspective view of the temperature detection jig. A dummy holder 1 holds a dummy wafer in an upright state, and a dummy wafer 2 (for example, a semiconductor wafer) is held in the dummy holder 1 and has a hole in its center for passing a quartz tube.
3は各石英細管でタミーウエハ2の貫通孔に挿入され、
4a〜4cは石英細管内に挿入された温度検知用熱電対
で、4aが炉の奥部の温度を検知するための熱電対、4
bが炉の中央部の温度を検知するための熱電対、4cが
炉の出入口附近部の温度を検知するための熱電対てある
。3 is each quartz tube inserted into the through hole of the tummy wafer 2,
4a to 4c are thermocouples for temperature detection inserted into the quartz tube, 4a is a thermocouple for detecting the temperature in the inner part of the furnace;
A thermocouple b is used to detect the temperature at the center of the furnace, and a thermocouple 4c is used to detect the temperature near the entrance and exit of the furnace.
5は横型熱処理である。5 is horizontal heat treatment.
6はヒーターである。6 is a heater.
このような温度検知用治具は、被処理物である冫半導体
ウェハ及びそのホルダとほぼ同じように構成されている
のて熱処理炉内に挿入しても熱処理時と同じ炉内温度状
態を維持する。This kind of temperature detection jig is constructed in almost the same way as the semiconductor wafer and its holder, which are the objects to be processed, so even if it is inserted into the heat treatment furnace, it maintains the same temperature inside the furnace as during heat treatment. do.
したがつて、この治具によれば熱処理時における炉内の
温度状態を検知することができる。
2温度分布状態をより緻密に把握したい場合は熱電対或
いは石英細管を移動させることにより温度検知位置を変
化させて温度測定を行う。この実施例は温度検知用熱電
対を内蔵する石英細管が半導体ウェハの中心部の貫通孔
に挿入される形式のものであるから半導体ウェハの中心
部付近における温度分布状態の把握に適するが、第4図
に示すように半導体ウェハの周辺部を石英細管が通るよ
うな形式にし、半導体ウェハの周辺部における温度分布
状態を把握できるような態様においても実施することが
てきる。Therefore, with this jig, it is possible to detect the temperature state inside the furnace during heat treatment.
2. If it is desired to grasp the temperature distribution state more precisely, temperature measurement is performed by changing the temperature detection position by moving a thermocouple or a quartz tube. In this embodiment, a quartz tube containing a thermocouple for temperature detection is inserted into a through hole in the center of the semiconductor wafer, so it is suitable for understanding the temperature distribution state near the center of the semiconductor wafer. As shown in FIG. 4, it is also possible to implement the method in such a manner that a quartz tube passes through the periphery of the semiconductor wafer so that the state of temperature distribution in the periphery of the semiconductor wafer can be grasped.
石英細管に挿入する熱電対の数は3個に限る必要はなく
任意の数にできる。The number of thermocouples inserted into the quartz tube does not need to be limited to three, and can be any number.
1個の場合は、熱電・対を移動させることによつて温度
分布を検出でき.るが、複数の場合は内蔵させる熱電対
の位置をそれぞれ異ならせることによソー時に温度分布
状態を検出することが可能である。If there is only one thermocouple, the temperature distribution can be detected by moving the thermocouple. However, in the case of a plurality of thermocouples, it is possible to detect the temperature distribution state during sawing by changing the positions of the built-in thermocouples.
このように、本発明によれば被処理物体たるウェハへ及
びその保持具とほぼ同じ構成を有するものを温度検出用
治具として用いるのて、熱処理時と同じ条件で温度分布
状態を検出することができ、良い品質管理が可能となる
。As described above, according to the present invention, the temperature distribution state can be detected under the same conditions as during heat treatment by using as a temperature detection jig a device having almost the same structure as the wafer that is the object to be processed and its holder. This enables good quality control.
第1図乃至第3図は本発明の一実施例を示すもので、第
1図が温度測定状態における要部断面図、第2図が温度
検出用治具の正面図、第3図が温度検出用治具の斜視図
である。
第4図は本発明の他の実施例に係る温度検出用治具の正
面図である。1・・・ダミーホルダ、2・・・タミーウ
エハ、3・・・石英細管、4a〜4c・・・熱電対、5
・・・横型加熱炉、6・・・ヒータ。Figures 1 to 3 show one embodiment of the present invention, in which Figure 1 is a sectional view of the main part in a temperature measurement state, Figure 2 is a front view of the temperature detection jig, and Figure 3 is a temperature detection jig. It is a perspective view of a detection jig. FIG. 4 is a front view of a temperature detection jig according to another embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Dummy holder, 2... Tummy wafer, 3... Quartz capillary, 4a-4c... Thermocouple, 5
...Horizontal heating furnace, 6...Heater.
Claims (1)
向に配列するウェハホルダーを内部に入れた状態で熱処
理する横型処理炉の内部温度検出用治具において、上記
ウェハホルダーと同じ熱伝導性を有しかつ複数のウェハ
を直立させ、そのウェハ主面と垂直方向に沿つて配列さ
せた状態で保持することのできるダミーホルダ、このダ
ミーホルダの各保持部に保持された上記ウェハとほぼ同
じ形状と熱伝導性を有する複数のダミーウェハ及び、複
数のダミーウェハの主面と垂直方向でダミーウェハに保
持されるような状態で取り付けられる石英細管から成り
、この細管に温度検知用熱電対が内蔵されるようになつ
ていることを特徴とする横型熱処理の内部温度検出用治
具。1. In a jig for detecting the internal temperature of a horizontal processing furnace in which a plurality of wafers are heat-treated with a wafer holder arranged vertically vertically to the main surface of the wafers inside, the jig has the same thermal conductivity as the wafer holder. A dummy holder that can hold multiple wafers upright and arranged in a direction perpendicular to the main surface of the wafers; each holding part of this dummy holder has approximately the same shape and thermal conductivity as the above-mentioned wafers. It consists of a plurality of dummy wafers having the same temperature and a quartz capillary tube attached to the dummy wafer in a direction perpendicular to the main surface of the plurality of dummy wafers, and a thermocouple for temperature detection is built into the capillary tube. A jig for detecting the internal temperature of horizontal heat treatment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6233478A JPS6047981B2 (en) | 1978-05-26 | 1978-05-26 | Jig for detecting internal temperature of horizontal heat treatment furnace |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6233478A JPS6047981B2 (en) | 1978-05-26 | 1978-05-26 | Jig for detecting internal temperature of horizontal heat treatment furnace |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54154376A JPS54154376A (en) | 1979-12-05 |
JPS6047981B2 true JPS6047981B2 (en) | 1985-10-24 |
Family
ID=13197121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6233478A Expired JPS6047981B2 (en) | 1978-05-26 | 1978-05-26 | Jig for detecting internal temperature of horizontal heat treatment furnace |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6047981B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6227291U (en) * | 1985-08-01 | 1987-02-19 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60111036U (en) * | 1983-12-28 | 1985-07-27 | 三洋電機株式会社 | Temperature measurement holder |
JPH0787184B2 (en) * | 1986-11-29 | 1995-09-20 | サ−ムコ システムズ インコ−ポレ−テツド | Heat treatment equipment |
JPH01102923A (en) * | 1987-10-16 | 1989-04-20 | Mitsubishi Metal Corp | How to adjust the temperature inside the heating furnace |
JPH0291930A (en) * | 1988-09-29 | 1990-03-30 | Dainippon Screen Mfg Co Ltd | Device for heat-treating substrate |
KR100850086B1 (en) | 2006-12-20 | 2008-08-04 | 동부일렉트로닉스 주식회사 | Horizontal type furnace for manufacturing a semiconductor device |
JP2011253986A (en) * | 2010-06-03 | 2011-12-15 | Mitsubishi Electric Corp | Thermocouple for diffusion furnace, temperature measurement method, and method of manufacturing semiconductor device |
-
1978
- 1978-05-26 JP JP6233478A patent/JPS6047981B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6227291U (en) * | 1985-08-01 | 1987-02-19 |
Also Published As
Publication number | Publication date |
---|---|
JPS54154376A (en) | 1979-12-05 |
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