JPS6045494U - Hybrid integrated circuit device - Google Patents
Hybrid integrated circuit deviceInfo
- Publication number
- JPS6045494U JPS6045494U JP1983138195U JP13819583U JPS6045494U JP S6045494 U JPS6045494 U JP S6045494U JP 1983138195 U JP1983138195 U JP 1983138195U JP 13819583 U JP13819583 U JP 13819583U JP S6045494 U JPS6045494 U JP S6045494U
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- circuit device
- hybrid integrated
- heat dissipation
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来の混成集積回路装置の1例を示す断面図、
第2図は本考案の1実施例を示す断面図、第3゛図及び
第4図は他の実施例を示す断面図である。
1.21は混成集積回路装置、4,33は配線基板、5
は半導体素子、6は電子部品、7はケース、22は放熱
板、23は放熱基板、25は半導体装置である。FIG. 1 is a sectional view showing an example of a conventional hybrid integrated circuit device.
FIG. 2 is a sectional view showing one embodiment of the present invention, and FIGS. 3 and 4 are sectional views showing other embodiments. 1.21 is a hybrid integrated circuit device, 4 and 33 are wiring boards, 5
1 is a semiconductor element, 6 is an electronic component, 7 is a case, 22 is a heat sink, 23 is a heat sink, and 25 is a semiconductor device.
Claims (1)
置と他の電子部品と配線基板を備え、上記半導体装置が
上記放熱面を外部に開放した状態で一体に構成されてい
ることを特徴とする混成集積回路装置。 2 複数の半導体装置の放熱面が配線基板の面と平行で
あり、且つ同一面に配されていることを特徴とする実用
新案登録請求の範囲第1項記載の混成集積回路装置。 3 複数の半導体装置が基板に対して左右又は上下のい
ずれかについて略対称に配されていることを特徴とする
実用新案登録請求の範囲第1項又は第2項記載の混成集
積回路装置。[Claims for Utility Model Registration] 1. A semiconductor device molded with a heat dissipation surface on one side, other electronic components, and a wiring board, the semiconductor device being integrated with the heat dissipation surface open to the outside. A hybrid integrated circuit device comprising: 2. The hybrid integrated circuit device according to claim 1, wherein the heat dissipation surfaces of the plurality of semiconductor devices are parallel to and coplanar with the surface of the wiring board. 3. The hybrid integrated circuit device according to claim 1 or 2, wherein a plurality of semiconductor devices are arranged substantially symmetrically either horizontally or vertically with respect to the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1983138195U JPS6045494U (en) | 1983-09-06 | 1983-09-06 | Hybrid integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1983138195U JPS6045494U (en) | 1983-09-06 | 1983-09-06 | Hybrid integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6045494U true JPS6045494U (en) | 1985-03-30 |
Family
ID=30310158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1983138195U Pending JPS6045494U (en) | 1983-09-06 | 1983-09-06 | Hybrid integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6045494U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017154075A1 (en) * | 2016-03-07 | 2017-09-14 | 三菱電機株式会社 | Electronic control device |
-
1983
- 1983-09-06 JP JP1983138195U patent/JPS6045494U/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017154075A1 (en) * | 2016-03-07 | 2017-09-14 | 三菱電機株式会社 | Electronic control device |
JPWO2017154075A1 (en) * | 2016-03-07 | 2018-05-24 | 三菱電機株式会社 | Electronic control unit |
US10548213B2 (en) | 2016-03-07 | 2020-01-28 | Mitsubishi Electric Corporation | Electronic controlling apparatus |
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