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JPS60240140A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS60240140A
JPS60240140A JP59096917A JP9691784A JPS60240140A JP S60240140 A JPS60240140 A JP S60240140A JP 59096917 A JP59096917 A JP 59096917A JP 9691784 A JP9691784 A JP 9691784A JP S60240140 A JPS60240140 A JP S60240140A
Authority
JP
Japan
Prior art keywords
chip
signals
chips
terminals
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59096917A
Other languages
Japanese (ja)
Other versions
JPH0714002B2 (en
Inventor
Akira Nakada
章 中田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP59096917A priority Critical patent/JPH0714002B2/en
Publication of JPS60240140A publication Critical patent/JPS60240140A/en
Publication of JPH0714002B2 publication Critical patent/JPH0714002B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To connect chips and chips without passing a package, by outputting input signals, which are applied to the chip through a pad, and making that inputted signals to be inputted to the other chips. CONSTITUTION:Input terminals 2 are provided at one outer edge part of a chip 1. Output terminals 3 are provided at the outer edge part on the other side. The terminals 2 and 3 are connected by wiring materials 8. The terminals are also connected to the circuits, which are integrated at the central part of the chip 1 at the same time. For example, address signals are supplied to the address signal input terminals 2 of the chip 1 at the center from an upper chip 13. At the same time, the signals are sent to the address signal output terminals 3 of the chip 1 through the wirings 8 in the chip. The signals are also sent to a lower chip 14. Memory data signals and power sources are also supplied to the central chip 1 from a left chip 15. They are also supplied to a right chip 16. By repeating this procedure, the signals and power sources can be supplied to the many chips. Therefore, the equivalently large-scale memory devices and the like can be obtained.

Description

【発明の詳細な説明】 〔技術分野〕 本狛明は、半導体装置の、外部との接続端子に関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] This invention relates to connection terminals for semiconductor devices with the outside.

〔従来技術〕[Prior art]

シリコン等の基板上に農作されたトランジスタや集積回
路は、電子回路部品として既に広く普及している。これ
らの半導体装置のチップ自体はきわめて小さくできるも
のの、従来は、これを実装する際に大きな体積を必要と
するという欠点を有していた。半導体記憶@懺(以下半
導体メモリと略す)を例にとって説明すると、特表昭5
5−501195「動的ランダムアクセスメモリの構成
」において64にビットダイナミックRAMの実現例が
示されているが、現在の技術レベルで製作した場合、チ
ップの平面積は通常30平方ミリメートル程度の大きさ
となる(文献、日経エレクトロニクス、1980年9月
29日号、78ページ〜94ページ)。チップの厚みは
約0.4ミリメートルである。ところが、64にビット
ダイナミックRAMは、通常は8本ずつの端子ケ両側に
つけた。
Transistors and integrated circuits produced on substrates such as silicon are already widely used as electronic circuit components. Although the chips themselves of these semiconductor devices can be made extremely small, they have conventionally had the disadvantage of requiring a large volume when mounted. Taking semiconductor memory @Kin (hereinafter abbreviated as semiconductor memory) as an example,
5-501195 "Configuration of Dynamic Random Access Memory", 64 shows an example of realizing a bit dynamic RAM, but when manufactured at the current technology level, the planar area of the chip is usually about 30 square millimeters. (Literature, Nikkei Electronics, September 29, 1980 issue, pages 78-94). The thickness of the chip is approximately 0.4 mm. However, the bit dynamic RAM in the 64 was usually attached to eight terminals on each side.

いわゆる16ビンテユアルインラインパツケージに実装
されるため、パッケージ千面積は約150平方ミリメー
トルとなり、またパッケージ商さは約4ミリメートルと
なる。したがって、チップをパッケージに実装すること
により、平面積にして5倍、高さで10倍にも達してお
り、電子回路を高密度化する上での大きな障害となって
いた。また、一般に、半導体メモリでは、1個では充分
な容量な確保できない場合が多い。そのため、大規模な
メモリシステムが必要な場合には、前記の64にビット
ダイナミックRAMの様な半導体メモリヲ多数使用して
メモリシステムとするのであるが、このとき、番地選択
(以下アドレスと略す)信号やデータ信号、さらには電
源等も各素子に並列に加えられるため、半導体メモリ以
外の素子の数はきわめて少なく、メモリシステム内には
、1−6ピンテユアルインラインパツケージに実装され
た半導体メモリの列が多数並列に接続されている場合が
多い。したがって前述の、パッケージに実装することに
よるスペース上のデメリットは、きわめて大きなものと
なっていた。また、大規模な装置では、当然、部品点数
も増えるし、ソケットや半田付けによる接続点も増加す
るから、それだけ工作不良等のトラブルが起きやすいと
いう欠点も有していた。
Since it is mounted in a so-called 16-bin in-line package, the package area is about 150 square millimeters, and the package quotient is about 4 millimeters. Therefore, by mounting a chip in a package, the planar area is five times larger and the height is ten times larger, which has been a major obstacle in increasing the density of electronic circuits. Furthermore, in general, it is often not possible to secure sufficient capacity with one semiconductor memory. Therefore, when a large-scale memory system is required, a large number of semiconductor memories such as the 64-bit dynamic RAM are used in the memory system, but at this time, the address selection (hereinafter abbreviated as address) signal is used. , data signals, and even power supply are applied to each element in parallel, so the number of elements other than semiconductor memory is extremely small. Many columns are often connected in parallel. Therefore, the above-mentioned disadvantage in terms of space due to mounting in a package has become extremely large. Furthermore, in a large-scale device, the number of parts increases, and the number of connection points using sockets and soldering also increases, which has the disadvantage that troubles such as poor workmanship are more likely to occur.

〔目的〕 本発明は、このような欠点を除去するため、パッケージ
を介さずに、チップとチップとを接続できるようにした
ものである。
[Objective] In order to eliminate such drawbacks, the present invention enables chips to be connected without using a package.

〔概要〕〔overview〕

本発明は、チップ内に、チップ本来の機能を果たすため
の回路を晦えると同時に、配線のための領域を設け、複
数のチップ外部との接続端子(以下パッドと称する)を
該配線で結ぶことによって、あるパッドを遡して該チッ
プに加えられた入力信号を、別のパッドから出力して他
のチップへの入力信号とすることを特徴としている。
The present invention provides a circuit within a chip to perform the original functions of the chip, and at the same time provides an area for wiring, and connects a plurality of connection terminals (hereinafter referred to as pads) with the outside of the chip using the wiring. Accordingly, an input signal applied to a certain chip by tracing back to a certain pad is outputted from another pad and used as an input signal to the other chip.

〔実施例〕〔Example〕

以下、実施例に基き、本発明の詳細な説明する。 Hereinafter, the present invention will be described in detail based on Examples.

第1図は、本発明を実施した半導体メモリの例で、図中
1は前述の、64にビットダイナミックRAMの様な、
半導体記憶装置の、チップ外形を示している。図中1・
1は、この半導体記憶装置がその本来の機能を果たすた
めの回路部分である。また、図中2は番地選択(以下ア
ドレスと称す)信号入力端子、3はアドレス信号出力端
子、4は電源入力端子、5は電源入力端子、6は記憶デ
ータの入力端子、7は記憶データの出力端子、8は各入
力端子と出力端子を結ぶ配線である。この実施例では、
本記憶装置には使用しない9の入力端子と10の出力端
子をも有している。この端子は他の装置への信号を通過
させるために使用される。なお本実施例では、2と3.
4と5.6と7.9と10の各端子については電気的に
全く区別がないため、各端子の入出力関係を逆にしても
支障はない。なお、6と7については入出力兼用端子で
、内部回路は、いわゆるスリーステルト回路となってい
る。第2図は、第1図に示した本発明による半導体記憶
装置を高密度に実装することによって、大規模のMe憶
装価を実現したものである。図中12で示されている配
線は、金又はアルミニウム等の導′尻性細線を使ったワ
イヤポンディング法や、あるいは銅等の導電性薄膜で配
線を描いた基板にla接チップを取付ける、いわゆるギ
ヤグボンデイ上方のチップ13から、中央のチップ1の
アドレス信号入力端子2に供給される。同時にチップ内
の配線8によってチップ1のアドレス信号出力端子3に
も信号が伝わり、下方のテップ14にも供給される。記
憶データ信号や電源についても同様に、左方のチップ1
5かも中央のチップ1に供給され、さらに右方のチップ
16にも供給される。
FIG. 1 shows an example of a semiconductor memory embodying the present invention.
It shows the external shape of a chip of a semiconductor memory device. 1 in the diagram
Reference numeral 1 denotes a circuit portion for this semiconductor memory device to perform its original function. In the figure, 2 is an address selection (hereinafter referred to as address) signal input terminal, 3 is an address signal output terminal, 4 is a power input terminal, 5 is a power input terminal, 6 is a storage data input terminal, and 7 is a storage data input terminal. The output terminal 8 is a wiring connecting each input terminal and the output terminal. In this example,
This storage device also has 9 input terminals and 10 output terminals that are not used. This terminal is used to pass signals to other devices. Note that in this embodiment, 2 and 3.
Since there is no electrical distinction between terminals 4, 5.6, 7.9, and 10, there is no problem even if the input/output relationship of each terminal is reversed. Note that 6 and 7 are input/output terminals, and the internal circuit is a so-called three stealth circuit. FIG. 2 shows a semiconductor memory device according to the present invention shown in FIG. 1 that has been implemented at a high density to achieve a large Me storage cost. The wiring indicated by 12 in the figure can be made by wire bonding using a conductive thin wire made of gold or aluminum, or by attaching a la-contact chip to a board on which wiring is drawn with a conductive thin film such as copper. The signal is supplied from the chip 13 above the so-called gear bonding to the address signal input terminal 2 of the chip 1 in the center. At the same time, the signal is also transmitted to the address signal output terminal 3 of the chip 1 through the wiring 8 within the chip, and is also supplied to the lower step 14. Similarly, for storage data signals and power supply, chip 1 on the left
5 is also supplied to the chip 1 in the center and also to the chip 16 on the right.

このようなくり返しによって、チップとチップとV接続
するだけで、たくさん並べられたチップに信号や電源を
供給できるので、等狐的に大規模な記憶装置を得ること
ができる。
By repeating this process, it is possible to supply signals and power to a large number of chips by simply making a V connection between chips, making it possible to obtain a virtually large-scale storage device.

大規模記憶装置を構成する場合、複数のメモリ列を並列
に弘続し、アドレス信号に全(同じものを加えておいて
、チップセレクト信号によってメモリ列を選択する方法
がある。第6図および第4図は、チップセレクト信号の
加え方に、本発明を適用したものである。第6図にて、
21.22.23.24はそれぞれが別個のチップセレ
クト信号の配線であり、この信号が活性化することによ
メモリチップ20は、チップセレクト入力端子17に(
2J号か加わった場合、チップセレクト配線19を曲し
て内部回路が活性化して、動作するものである。同時に
、この信号は、チップセレクト出力端子1日から出力さ
れるが、このとき、使用していない出力端子10との配
列を一部変更することにより、4列のチップはおのおの
独立して選択される。すなわち、左端のチップは配#2
4のチップセレクト信号が活性化した時に選択され、そ
の右側のチップは配線26の、その右911iのチップ
は配線22の、般も右のチップは配線21のそ工1.そ
れのチップセレクト信号が活性化した時に選択されるの
である。第4図では、チップとチップを結ぶ配線の並び
方を一部変更することによって第6図の場合と同様の動
作となるようにしたものである。また、第5図と第6図
はチップセレクト信号を各チップ内で発生する方法を示
したもので、第5図では、2進2桁の論理信号を、選択
信号線64と65によって左端のチップ29に加えてい
る。そして55によって加えられた信号は左端のチップ
から出力される時には論理反転増幅器27によって反転
されて、その右側のチックに供給される。このような接
続により、選択信号線34が硝埋”1”かつ65が!!
”1”’&示していれば左端のチップが選択され、64
が論理1111+かつ65か論理uO″ならばその右側
のチップか、64が論理”o”かつ55が論理″′0″
ならばさらにその右側のチップか、34が論理″′0”
かつ65が論理“1″ならば右端のチップかそれぞれ選
択される。このことは、上位のアドレス信号を加えるこ
とによってメモリ列を選択することができること7示し
ている。第6図では、選択信号線64の反転信号として
36を、選択信号@35の反転信号として37を追加し
ている。この場合、第5図と同様に4つのチップのうち
いずれか1つを選択することができるが、さらに、選択
信号線34と36を両方とも論理”0ルベルにすること
により、どのチップも選択されない状態を作ることもで
きるし、64と36を両方とも論理゛1″にすることに
より、4つのうち2つのチップが選択される様にするこ
とも可能である。
When configuring a large-scale storage device, there is a method of connecting multiple memory columns in parallel, adding the same address signal to all address signals, and selecting a memory column using a chip select signal. Fig. 4 shows the application of the present invention to the method of adding a chip select signal.In Fig. 6,
21, 22, 23, and 24 are separate chip select signal wirings, and when these signals are activated, the memory chip 20 connects the chip select input terminal 17 (
When No. 2J is added, the chip select wiring 19 is bent and the internal circuit is activated to operate. At the same time, this signal is output from the chip select output terminal 1, but at this time, by partially changing the arrangement with the unused output terminal 10, the chips in the four columns are each independently selected. Ru. In other words, the leftmost chip is layout #2.
The chip on the right is selected when the chip select signal 911i is activated, and the chip on the right side is selected on the wiring 26, the chip on the right side 911i is selected on the wiring 22, and the chip on the right is selected on the wiring 21. It is selected when its chip select signal is activated. In FIG. 4, the same operation as in FIG. 6 is achieved by partially changing the arrangement of the wiring connecting the chips. 5 and 6 show a method of generating a chip select signal within each chip. In FIG. Added to chip 29. When the signal applied by 55 is output from the leftmost chip, it is inverted by the logic inverting amplifier 27 and supplied to the rightmost chip. With such a connection, the selection signal line 34 is set to "1" and 65 is set to "1"! !
If it shows “1”, the leftmost chip is selected and 64
If is logic 1111+ and 65 is logic uO'', then the chip on the right is 64 is logic ``o'' and 55 is logic ``0''
Then, the chip on the right side, 34, is logic ``'0''
If 65 is logic "1", the rightmost chip is selected. This shows that a memory column can be selected by applying an upper address signal7. In FIG. 6, 36 is added as an inverted signal of the selection signal line 64, and 37 is added as an inverted signal of the selection signal @35. In this case, any one of the four chips can be selected as in FIG. It is possible to create a state in which no chips are selected, or it is possible to select two out of four chips by setting both 64 and 36 to logic "1".

なお、本発明の実施例は上記の様な例に限られるもので
はなく、アドレス信号線やデータ信号線等の配線がもつ
と多数であっても本発明を適用することは可能である。
Note that the embodiments of the present invention are not limited to the above examples, and the present invention can be applied even if there are a large number of wiring lines such as address signal lines and data signal lines.

また、各穐の信号線や電源−の配置についても任意であ
るし、また、別種のチップを混在させることも任意であ
る。
Further, the arrangement of the signal lines and power supply of each box is arbitrary, and it is also arbitrary to mix different types of chips.

〔効果〕〔effect〕

以上、実施例に示した様に、本発明によれば、半導体チ
ップをパッケージに実装することなく、狭い間隔で多数
のチップを並べて配線することが可能である。そのため
、実装することによって生じる無駄な面積をきわめて少
なくすることができ高密度に実装することが可能である
ため、装置を小型化できるという効果を生じる。特に、
大規模記憶装置の様に、同種のチップを多数使用す7)
場合にきわめて大きな効果を発揮する。また、本発明を
実施すれば、同時にいくつものチップをパッケージに収
容できるため、パッケージ外部での配a丁程は減少する
から、生産コストが低下するという効果を生じるし、ま
た、信頼性が向上するという効果をも生じる。
As described above in the embodiments, according to the present invention, it is possible to line up and wire a large number of semiconductor chips at narrow intervals without mounting the semiconductor chips in a package. Therefore, the wasted area caused by mounting can be extremely reduced and high-density mounting is possible, resulting in the effect that the device can be made smaller. especially,
Using many chips of the same type, such as in large-scale storage devices7)
It is extremely effective in some cases. Furthermore, if the present invention is implemented, a number of chips can be housed in a package at the same time, which reduces the number of chips to be distributed outside the package, resulting in lower production costs and improved reliability. It also has the effect of

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の1実施例である。 第2図は第1図に示した本発明の実施例の、配置および
配線方法を示したものである。 第3図、第4図、第5図、第6図は、本発明の実施例に
て、チップを選択する信号を加えるための、それぞれ違
う4つの方法を示したものである。 2・・・アドレス信号入力端子、6・・・アドレス信号
出力端子、4・・・電源入力端子、5・・・電源出力端
子、6・・・記憶データ入力端子、7・・・記憶データ
出力端子、8・・・各入力端子と出力端子を結ぶ配線。 以上 出願人 株式会社諏訪精工舎 代理人弁理士 最 上 務
FIG. 1 shows one embodiment of the invention. FIG. 2 shows the layout and wiring method of the embodiment of the invention shown in FIG. FIGS. 3, 4, 5, and 6 illustrate four different methods for applying chip selection signals in accordance with embodiments of the present invention. 2...Address signal input terminal, 6...Address signal output terminal, 4...Power input terminal, 5...Power output terminal, 6...Stored data input terminal, 7...Stored data output Terminal, 8...Wiring connecting each input terminal and output terminal. Applicant: Suwa Seikosha Co., Ltd. Representative Patent Attorney Tsutomu Mogami

Claims (1)

【特許請求の範囲】[Claims] チップの外縁部に、複数の、接続用端子を備え、チップ
の中心部処集積された回路を備えた半導体装i![おい
て、一方の外縁部に入力用の端子を備え、反対側の外縁
部に出力相の端子を備え、該2つの端子の間を4電性の
配線材料にて結線し、同時に前記の中心部に集積された
回路とも結線されていることを特徴とする半導体装置。
A semiconductor device equipped with a plurality of connection terminals on the outer edge of the chip and a circuit integrated in the center of the chip. [Input terminals are provided on one outer edge, output phase terminals are provided on the opposite outer edge, and the two terminals are connected using a four-conductor wiring material, and at the same time the above-mentioned A semiconductor device characterized in that it is also connected to a circuit integrated in its center.
JP59096917A 1984-05-15 1984-05-15 Signal supply method to chip Expired - Lifetime JPH0714002B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59096917A JPH0714002B2 (en) 1984-05-15 1984-05-15 Signal supply method to chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59096917A JPH0714002B2 (en) 1984-05-15 1984-05-15 Signal supply method to chip

Publications (2)

Publication Number Publication Date
JPS60240140A true JPS60240140A (en) 1985-11-29
JPH0714002B2 JPH0714002B2 (en) 1995-02-15

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5138419A (en) * 1988-06-01 1992-08-11 Fujitsu Limited Wafer scale integration device with dummy chips and relay pads
US5138427A (en) * 1989-06-30 1992-08-11 Kabushiki Kaisha Toshiba Semiconductor device having a particular structure allowing for voltage stress test application
EP0567209A3 (en) * 1992-04-16 1993-12-29 Sharp Kk Liquid crystal panel module and tape carrier package for liquid crystal driver ic
US5347145A (en) * 1990-12-27 1994-09-13 Kabushiki Kaisha Toshiba Pad arrangement for a semiconductor device
US5386127A (en) * 1990-04-25 1995-01-31 Kabushiki Kaisha Toshiba Semiconductor device having groups of pads which receive the same signal
EP1044472A1 (en) * 1997-11-14 2000-10-18 The Panda Project Multi-chip module having interconnect dies

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53140983A (en) * 1977-05-16 1978-12-08 Hitachi Ltd Semiconductor integrated circuit
JPS5420680A (en) * 1977-07-18 1979-02-16 Hitachi Ltd Large scale integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53140983A (en) * 1977-05-16 1978-12-08 Hitachi Ltd Semiconductor integrated circuit
JPS5420680A (en) * 1977-07-18 1979-02-16 Hitachi Ltd Large scale integrated circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5138419A (en) * 1988-06-01 1992-08-11 Fujitsu Limited Wafer scale integration device with dummy chips and relay pads
US5138427A (en) * 1989-06-30 1992-08-11 Kabushiki Kaisha Toshiba Semiconductor device having a particular structure allowing for voltage stress test application
US5386127A (en) * 1990-04-25 1995-01-31 Kabushiki Kaisha Toshiba Semiconductor device having groups of pads which receive the same signal
US5347145A (en) * 1990-12-27 1994-09-13 Kabushiki Kaisha Toshiba Pad arrangement for a semiconductor device
EP0567209A3 (en) * 1992-04-16 1993-12-29 Sharp Kk Liquid crystal panel module and tape carrier package for liquid crystal driver ic
EP1044472A1 (en) * 1997-11-14 2000-10-18 The Panda Project Multi-chip module having interconnect dies
EP1044472A4 (en) * 1997-11-14 2007-01-10 Silicon Bandwidth Inc Multi-chip module having interconnect dies

Also Published As

Publication number Publication date
JPH0714002B2 (en) 1995-02-15

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