JPS60231936A - Photomagnetic recording medium - Google Patents
Photomagnetic recording mediumInfo
- Publication number
- JPS60231936A JPS60231936A JP8807384A JP8807384A JPS60231936A JP S60231936 A JPS60231936 A JP S60231936A JP 8807384 A JP8807384 A JP 8807384A JP 8807384 A JP8807384 A JP 8807384A JP S60231936 A JPS60231936 A JP S60231936A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- refractive index
- layer
- recording medium
- magnetic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000000694 effects Effects 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 230000001681 protective effect Effects 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000003252 repetitive effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 45
- 230000005374 Kerr effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
- G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
Abstract
Description
【発明の詳細な説明】
技術分野
本発明はレーザー光により情報の記録、再生を行なう光
磁気記録媒体に関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a magneto-optical recording medium for recording and reproducing information using laser light.
従来技術
近年、レーザー光により情報の記録、再生を行なう光磁
気記録媒体、いわゆる光磁気ディスクが高密度記録に好
適な記録媒体として盛んに研究されている。このような
光磁気記録媒体の基本構成はガラス板のような透明基板
上に希土類金属〜遷移金属非晶質合金膜のような垂直磁
気異方性を有する磁性層を設けたものであり、記録はレ
ーザー光を照射した時の磁性層における磁気特性の急激
な変化を利用して行なわれ、また再生はレーザー光を照
射した時の磁性層における反射光による磁気光学効果（
カー効果、ファラデー効果等）を利用して行なわれる。BACKGROUND OF THE INVENTION In recent years, magneto-optical recording media, so-called magneto-optical disks, in which information is recorded and reproduced using laser light, have been actively researched as recording media suitable for high-density recording. The basic structure of such magneto-optical recording media is that a magnetic layer with perpendicular magnetic anisotropy, such as a rare earth metal to transition metal amorphous alloy film, is provided on a transparent substrate such as a glass plate. Reproduction is performed by utilizing the rapid change in magnetic properties of the magnetic layer when irradiated with laser light, and reproduction is performed using the magneto-optical effect (
This is done using the Kerr effect, Faraday effect, etc.).
ここで再生時のＣ／Ｎ比（光の反射率Ｒの平方根と磁気
光学回転角θとの積に比例する）はできるだけ大きいこ
とが望ましく、そのために光磁気記録媒体について材料
的な面ばかりでなく、構造的な面からも種々の提案がな
されている。Here, it is desirable that the C/N ratio during reproduction (proportional to the product of the square root of the light reflectance R and the magneto-optic rotation angle θ) is as large as possible, and for this reason, the material aspect of the magneto-optical recording medium is limited. Various proposals have been made from a structural standpoint as well.
例えば第１図（図中、１は基板、２は磁性層、３は低屈
折率又は高透明度の誘電体層）に示すようなカー効果エ
ンハンスメントタイプ、第２図（図中、２′はＴｂＦｅ
のような高キュリ一点の磁性層、ｆはＧｄＦｅのような
カー回転角の大きい磁性層）に示すような記録、再生機
能分離タイプ、第３図（図中、４は金属反射膜）のよう
な反射膜構造タイプ等が知られている。For example, the Kerr effect enhancement type as shown in Figure 1 (in the figure, 1 is the substrate, 2 is the magnetic layer, 3 is the dielectric layer with low refractive index or high transparency), Figure 2 (in the figure, 2' is TbFe
(F is a magnetic layer with a large Kerr rotation angle such as GdFe. Reflective film structure types are known.
しかしこれら提案の記録媒体はいずれも再生時に充分な
Ｃ／Ｎ比が得られず、しかも磁性層上に誘電体層のよう
な表面層があっても、磁性層の経時的酸化腐食による性
能劣化は避けられなかった。However, none of these proposed recording media can obtain a sufficient C/N ratio during reproduction, and even if there is a surface layer such as a dielectric layer on the magnetic layer, the performance deteriorates due to oxidation corrosion of the magnetic layer over time. was unavoidable.
目 的
本発明の目的は再生時に充分高いＣ／Ｎ比が得られ、し
かも磁性層の酸化腐食をほぼ完全に防止できる光磁気記
録媒体を提供することである。Object The object of the present invention is to provide a magneto-optical recording medium which can obtain a sufficiently high C/N ratio during reproduction and can almost completely prevent oxidative corrosion of the magnetic layer.
構成
本発明の光磁気記録媒体は第４図に示す工５に基板１上
に垂直磁気異方性を有する磁性層２とその上に厚さ３０
０〜１０．００ＯＡの低屈折率又は高透明度の誘電体層
３（以下、第一誘電体層という）と更にその上に厚さ２
０〜１００Ａの高屈折率の誘電体層３′（以下、第二誘
電体層という）とを設けたことを特徴とするものである
。Structure The magneto-optical recording medium of the present invention has a structure 5 shown in FIG.
A dielectric layer 3 with a low refractive index or high transparency of 0 to 10.00 OA (hereinafter referred to as the first dielectric layer) and a thickness of 2
A dielectric layer 3' (hereinafter referred to as a second dielectric layer) having a high refractive index of 0 to 100 A is provided.
このように本発明の光磁気記録媒体はカー効果エンハン
スメントタイプに属し、従来の低屈折率又は乱造明度の
誘電体層上に高屈折＄ｚｖ低ｉ＊＊の誘電体層を設ける
ことにより、更にカー効果、即ちカー回転角θｋを増大
させたものである。即ち従来のカー効果エンハンスメン
トタイプの光磁気記録媒体においては磁性層で反射した
光は誘電体層で光の繰返し干渉を受けることによりＯｋ
が看干増大するだけであるが本発明の光磁気記録媒体の
場合は磁性層で反射した光は第二誘電体層で従来エリも
更に大きい反射を受け、その結果、磁性層と第二誘電体
層との間で光の繰返し干渉効果がいっそう強められるこ
とになり、Ｏｋが著しく増大する。一方、このため記銖
された情報信号を検出する受光素子に戻る反射光の強度
は従来のものよりも減少するが、反射率Ｒの減少分をＯ
ｋの増大分が上回るので、結果としてＣ／Ｎ比は向上す
る。As described above, the magneto-optical recording medium of the present invention belongs to the Kerr effect enhancement type, and by providing a dielectric layer with a high refraction $zv low i** on a conventional dielectric layer with a low refractive index or random brightness, it can be further improved. This is the Kerr effect, that is, the Kerr rotation angle θk is increased. In other words, in the conventional Kerr effect enhancement type magneto-optical recording medium, the light reflected by the magnetic layer is repeatedly interfered with by the dielectric layer.
However, in the case of the magneto-optical recording medium of the present invention, the light reflected by the magnetic layer is reflected even more than the conventional area by the second dielectric layer, and as a result, the light reflected by the magnetic layer and the second dielectric layer is The repeated interference effect of light with the body layer is further strengthened, and Ok is significantly increased. On the other hand, for this reason, the intensity of the reflected light returning to the light receiving element that detects the recorded information signal is reduced compared to the conventional one, but the decrease in reflectance R is
Since the increase in k exceeds this, the C/N ratio improves as a result.
次に本発明の光磁気配ａｍ体に用いられる材料層の形成
法等について説明する。Next, a method of forming a material layer used in the magneto-optical array of the present invention will be explained.
まず基板の材料としては一般に石英ガラス；ＧＧＧ単結
晶；サファイヤ；リチウムタンタレート：結晶化透明ガ
ラス；ノぐイレツクスガラス；表面を酸化処理し又は処
理しない単結晶シリコン； ｋＬ＠ ０＠ ｇ Ａ４０
Ｂ・ＭｇＯ，ＭｇＯ・Ｉ、ＩＦ、 Ｙ、 Ｏ，・Ｌ ｉ
Ｆ、Ｂ ＠ ＯｏＺ ｒ Ｏ＠ ’ Ｙ！ ０１１
＊ ＴｂＯ＠ ’ Ｃａｏ等の透明セラミック材；無機
シリコン材等の無機材料或いはアクリル樹脂、ポリカー
ボネート樹脂、ポリエステル樹脂等の有機材料が使用で
きる。First, the substrate materials are generally quartz glass; GGG single crystal; sapphire; lithium tantalate: crystallized transparent glass; nogilex glass; single crystal silicon with or without oxidation treatment on the surface; kL@0@g A40
B・MgO, MgO・I, IF, Y, O,・Li
F, B @ OoZ r O@ ' Y! 011
* Transparent ceramic materials such as TbO@'Cao; inorganic materials such as inorganic silicon materials, or organic materials such as acrylic resins, polycarbonate resins, and polyester resins can be used.
磁性層は磁気異方性を有する膜、例えばＴｂＦ・。The magnetic layer is a film having magnetic anisotropy, for example, TbF.
ＧｄＦｓ、 ＴｂＦａＣｏ、 ＧｄＴｂＦａ等の希土類
金属〜遷移金属非晶質合金膜やＭｎＣｕＢ１． Ｂａフ
ェライト等の多結晶膜からなっている。磁性層の形成法
としては一般に真空蒸着法、スパッタリング法、イオン
ブレーティング法が採用される。厚さは５００〜５．０
００ Ａの範囲が適当である。Rare earth metal to transition metal amorphous alloy films such as GdFs, TbFaCo, and GdTbFa, and MnCuB1. It is made of a polycrystalline film such as Ba ferrite. Generally, a vacuum evaporation method, a sputtering method, or an ion blating method is employed as a method for forming the magnetic layer. Thickness is 500~5.0
A range of 00 A is appropriate.
第一誘電体層の材料としては低屈折率又は高透明度の誘
電体１例えばＳ ｉ Ｏ！ ｇ Ｓ ｌ Ｏ，Ｔ ｉ
Ｏ！ ｅＴ １０． Ｃｏｏ、 Ｉ（ｆ Ｏ！ ｐ Ｂ
ｅｄ、 ’ｒｈｏ、 Ｉ Ｓ １Ｂ Ｎ４等が使用され
る。第−誘電体層の形成法は磁性層の場合と同様である
。厚さは光の繰返し干渉によるカー効果エンハンスメン
トを起こさせるために、３００〜１ｏ、 ｏｏｏ Ａが
適当である。３ＯＯＡ未満では充分な効果が得られず、
また１０，０ＯＯＡを越えてもそれ以上の効果が得られ
ない。The first dielectric layer may be made of a dielectric material 1 having a low refractive index or high transparency, such as S i O! g S l O, T i
O! eT 10. Coo, I(f O! p B
ed, 'rho, IS 1B N4, etc. are used. The method for forming the third dielectric layer is the same as that for the magnetic layer. The appropriate thickness is 300 to 10, ooo A in order to cause Kerr effect enhancement due to repeated interference of light. If it is less than 3OOA, sufficient effect cannot be obtained,
Moreover, even if it exceeds 10,000 OOA, no further effect can be obtained.
第二誘電体層の材料としては高屈折率の誘電体、例Ｌｋ
ｉアモルファスシリコン、アモルファスゲルマニウム等
が使用される。第二誘電体層の形成法も磁性層の場合と
同様であり、更にプラズマＣＶＤ法も使用できる。厚さ
は２０〜１００Ａが適当である。２０Ａ未満の膜は得難
く、また１００人を越えると、透過率が減じるので好ま
しくない。The material of the second dielectric layer is a high refractive index dielectric, for example Lk.
i Amorphous silicon, amorphous germanium, etc. are used. The method for forming the second dielectric layer is the same as that for the magnetic layer, and plasma CVD can also be used. A suitable thickness is 20 to 100A. It is difficult to obtain a membrane of less than 20A, and if it exceeds 100 people, the transmittance decreases, which is not preferable.
効果
以上の如く本発明の光磁気記録媒体は従来の低屈折率又
は高透明度の誘電体層上に更に高屈折率の誘電体層を設
けたので、光の繰返し干渉効果の向上により再生時のＣ
／Ｎ比は向上し、またこの新たな誘電体層の保護効果に
より磁性層の酸化腐食はほぼ完全に防止され、性能劣化
を起こすことはない。Effects As described above, the magneto-optical recording medium of the present invention has a dielectric layer with a high refractive index on top of the conventional dielectric layer with a low refractive index or high transparency. C
/N ratio is improved, and due to the protective effect of this new dielectric layer, oxidation corrosion of the magnetic layer is almost completely prevented, and performance does not deteriorate.
以下に本発明の実施例を示す。Examples of the present invention are shown below.
実施例
石英ガラス板上にＴｂＦｅを真空蒸着して厚さ５ｏｏＯ
Ａの磁性層を形成し、ついでその上にＳｔＯを真空蒸着
して厚さ４００Ａの第一誘電体層を形成し、更にその上
にアモルファスシリコンをプラズマＣＶＤ法で付着せし
めて厚さ５０Ａの第二誘電体層を形成し、光磁気記録媒
体を作成した。Example: TbFe was vacuum deposited on a quartz glass plate to a thickness of 500 mm.
A magnetic layer A is formed, and then StO is vacuum-deposited on it to form a first dielectric layer with a thickness of 400A, and amorphous silicon is further deposited on top of it by plasma CVD to form a first dielectric layer with a thickness of 50A. Two dielectric layers were formed to create a magneto-optical recording medium.
一方、比較のため、第二誘電体層を設げなかった他は同
様にして光磁気記録媒体を作成した。On the other hand, for comparison, a magneto-optical recording medium was prepared in the same manner except that the second dielectric layer was not provided.
次にこれらの記録媒体を一方向に磁化させ、この磁化の
方向とは逆の５００エルステツドの磁界を印加しながら
、出力２０ｍＷの半導体レーザー光を記録媒体表面での
強度１０ｍＷ及び周波数Ｉ Ｍｌ（ｚのパルスで照射記
録した後、同様に゛ ０レ
ーザー光を用いて再生した。この時のＣ／Ｎ比は本発明
品では４８ｄＢと高かったが、比較品では４２ｄＢと低
かった。Next, these recording media are magnetized in one direction, and while applying a magnetic field of 500 oersted opposite to the direction of magnetization, a semiconductor laser beam with an output of 20 mW is applied to the recording medium surface at an intensity of 10 mW and a frequency of I Ml (z After irradiation and recording with a pulse of 0, the C/N ratio was similarly high at 48 dB for the product of the present invention, but was low at 42 dB for the comparative product.
また以上の記録媒体ｔｔ６０℃、９０％Ｒ１（の雰囲気
中に２００時間保存後、同様に記録、再生を行なったと
ころ、Ｃ／Ｎ比は本発明品では４５ｄＢと保存前と殆ん
ど変らなかったのに対し、比較品では３８ｄＢと著しく
低下した、Furthermore, when the above recording medium was stored in an atmosphere of 60°C and 90% R1 for 200 hours, and recording and playback were performed in the same manner, the C/N ratio of the inventive product was 45 dB, which was almost the same as before storage. On the other hand, the comparative product showed a significant decrease of 38 dB.
第１〜３図は従来の光磁気記録媒体の構成図、第４図は
本発明の光磁気記録媒体の構成図である。
１・・・透明基板 ２・・・磁性層
ｌ・・・高キュリ一点の磁性層 ｌ・・・高カー回転角
の磁性層３・・・低屈折率又は高透明度の誘電体層３′
・・・高屈折率の誘電体層
４・・・金属反射膜
ご：すｉ（カ、１名1 to 3 are block diagrams of a conventional magneto-optical recording medium, and FIG. 4 is a block diagram of a magneto-optical recording medium of the present invention. 1...Transparent substrate 2...Magnetic layer l...Magnetic layer with high Curie point l...Magnetic layer with high Kerr rotation angle 3...Dielectric layer 3' with low refractive index or high transparency
...High refractive index dielectric layer 4...Metal reflective film: Sui (F, 1 person)
Claims (1)
厚さ３００〜１０，０００ Ａの低屈折率又は高透明度
の誘電体層と更にその上に厚さ２０〜１００Ａの高屈折
率の誘電体層とを設けてなる光磁気記録媒体、1. A magnetic layer with perpendicular magnetic anisotropy on the substrate, a dielectric layer with a low refractive index or high transparency with a thickness of 300 to 10,000 A, and a high refractive layer with a thickness of 20 to 100 A on top of that. a magneto-optical recording medium provided with a dielectric layer of
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8807384A JPS60231936A (en) | 1984-05-01 | 1984-05-01 | Photomagnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8807384A JPS60231936A (en) | 1984-05-01 | 1984-05-01 | Photomagnetic recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60231936A true JPS60231936A (en) | 1985-11-18 |
Family
ID=13932677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8807384A Pending JPS60231936A (en) | 1984-05-01 | 1984-05-01 | Photomagnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60231936A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63146255A (en) * | 1986-12-09 | 1988-06-18 | Matsushita Electric Ind Co Ltd | Magneto-optical recording medium |
| FR2625590A1 (en) * | 1987-12-30 | 1989-07-07 | Bull Sa | MAGNETO-OPTIC RECORDING MEDIUM RESISTANT TO CORROSION IN WET ATMOSPHERE |
-
1984
- 1984-05-01 JP JP8807384A patent/JPS60231936A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63146255A (en) * | 1986-12-09 | 1988-06-18 | Matsushita Electric Ind Co Ltd | Magneto-optical recording medium |
| FR2625590A1 (en) * | 1987-12-30 | 1989-07-07 | Bull Sa | MAGNETO-OPTIC RECORDING MEDIUM RESISTANT TO CORROSION IN WET ATMOSPHERE |
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