JPS60210882A - Passive resin for thin film solar cells - Google Patents
Passive resin for thin film solar cellsInfo
- Publication number
- JPS60210882A JPS60210882A JP59066940A JP6694084A JPS60210882A JP S60210882 A JPS60210882 A JP S60210882A JP 59066940 A JP59066940 A JP 59066940A JP 6694084 A JP6694084 A JP 6694084A JP S60210882 A JPS60210882 A JP S60210882A
- Authority
- JP
- Japan
- Prior art keywords
- film solar
- resin
- solar cells
- thin
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
- Photovoltaic Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は薄膜太陽電池用パッジベージ冒ン樹脂に関する
。DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION The present invention relates to a padding resin for thin film solar cells.
従来例の構成とその問題点
従来より、薄膜太陽電池の外観ならびに耐環境性の向上
を図ることを目的としてエポキシ樹脂を主成分とする樹
脂をスクリーン印刷法により素子の裏面側より塗布し、
薄膜太陽電池のパッシベーション膜を形成する方法がよ
く用いられてきた。Conventional structure and problems Conventionally, in order to improve the appearance and environmental resistance of thin-film solar cells, a resin whose main component is epoxy resin is applied from the back side of the element using a screen printing method.
Methods of forming passivation films for thin film solar cells have been frequently used.
しかしながら、従来の樹脂では、その成分の顔料の粒径
の８０チが２０μｍ程度と非常に大きく、スクリーン印
刷時において薄膜太陽電池素子に損傷を与え、ショート
不良を多発させるという欠点があった。However, in conventional resins, the particle diameter of the pigment component (80cm) is very large, about 20μm, and this has the drawback of damaging thin film solar cell elements during screen printing and causing frequent short-circuit failures.
第１図は、従来の樹脂によるパッシベーション膜の形成
の一例を示す図である。第１図において１はガラス等の
透光性絶縁基板、２はＩＴＯ等からなる透明な第一電極
、３は厚さ６０ｏＯ人程度の非晶質シリコン層、４はア
ルミニウム等からなる第二電極、５はエポキシ樹脂、６
は５のエポキシ樹脂の成分である酸化鉄、カーボン等の
顔料粒子、７はスクリーンマスク、８は印刷に用いるス
キージである。第１図のように薄膜太陽電池に、スクリ
ーン印刷によシパッシベーシせン膜を形成する時、従来
の樹脂を用いると顔料の粒径が２０μｍと大きいため、
顔料粒子に印刷圧力が加わった場合、顔料粒子が第二電
極を押し下げ、薄い非晶質シリコン層を突き破シ第−電
極と接触して、ショート不良が発生していた。FIG. 1 is a diagram showing an example of forming a passivation film using a conventional resin. In Fig. 1, 1 is a transparent insulating substrate made of glass or the like, 2 is a transparent first electrode made of ITO, etc., 3 is an amorphous silicon layer with a thickness of about 600m, and 4 is a second electrode made of aluminum, etc. , 5 is epoxy resin, 6
5 is a pigment particle such as iron oxide or carbon which is a component of the epoxy resin; 7 is a screen mask; and 8 is a squeegee used for printing. As shown in Figure 1, when forming a passive substrate film on a thin-film solar cell by screen printing, if conventional resin is used, the particle size of the pigment is as large as 20 μm.
When printing pressure is applied to the pigment particles, the pigment particles press down on the second electrode, break through the thin amorphous silicon layer, and come into contact with the second electrode, causing a short circuit.
発明の目的
本発明は上記欠点に鑑み、スクリーン印刷時のショート
不良を解消させることのできる薄膜太陽電池用パッシベ
ーション樹脂を提供するものである。OBJECTS OF THE INVENTION In view of the above drawbacks, the present invention provides a passivation resin for thin film solar cells that can eliminate short-circuit defects during screen printing.
発明の構成
この目的を達成するために本発明の薄膜太陽電池用パッ
ジベージタン樹脂は、その−成分をなす酸化鉄、カーボ
ン等の顔料の粒径を５μｍ以下に微細化したことに特徴
がある。なお顔料の粒径を５μｍ以下にするには、微粉
砕用の特殊な粉砕機を用いて粉砕をくり返すことにより
得ることができる。Structure of the Invention In order to achieve this object, the padgebetan resin for thin-film solar cells of the present invention is characterized in that the particle size of pigments such as iron oxide and carbon, which are its components, is made fine to 5 μm or less. The particle size of the pigment can be reduced to 5 μm or less by repeated pulverization using a special pulverizer for fine pulverization.
実施例の説明
第２図は従来の樹脂と、本発明の薄膜太陽電池用パッジ
ページジン樹脂をスクリーン印刷した時の印刷前後のシ
ョート不良数の変化を示したものである。ここでのカラ
印刷は、樹脂印刷のバックグラウンドとなっている薄膜
太陽電池素子の上をスクリーンをへだててスキージによ
り強くこするという印刷手法そのものの影響を調べるた
めである。この第２図よシ、カラ印刷によりショート不
良が発生することはなく、本発明の薄膜太陽電池用パッ
シベーション樹脂を利用することにより、新たなショー
ト不良は発生しなかった。第３図はパッシベーション樹
脂をショート不良のまったくない薄膜太陽電池上にスク
リーン印刷した時の、樹脂の顔料粒径とショート不良発
生率との関係を示したものである。ここでいう粒径は粒
度分布の最大値であシ、約８０％がその近傍の粒径から
なっているものである。第３図より、顔料粒径が小さく
なる程、不良率は低下し、６μｍ以下に抑えることによ
り不良は全く発生しなくなった。DESCRIPTION OF EXAMPLES FIG. 2 shows the change in the number of short-circuit defects before and after printing when a conventional resin and a padpage resin for thin film solar cells of the present invention were screen printed. The purpose of color printing here was to examine the influence of the printing method itself, in which the thin-film solar cell element, which forms the background of resin printing, is rubbed strongly with a squeegee through a screen. As shown in FIG. 2, color printing did not cause any short-circuit defects, and by using the passivation resin for thin-film solar cells of the present invention, no new short-circuit defects occurred. FIG. 3 shows the relationship between the pigment particle size of the resin and the incidence of short circuit defects when a passivation resin is screen printed on a thin film solar cell that has no short circuit defects. The particle size referred to here is the maximum value of the particle size distribution, and approximately 80% of the particle size is the particle size in the vicinity thereof. From FIG. 3, as the pigment particle size becomes smaller, the defect rate decreases, and by suppressing the particle size to 6 μm or less, no defects occur at all.
発明の効果
以上のように本発明は、薄膜太陽電池のパッジページ町
ン膜として用いられる樹脂において、その−成分である
顔料の粒径を５μｍ以下に微細化することにより、スク
リーン印刷時に発生するショート不良を解消することが
でき、太陽電池製造工程上その効果は大なるものである
。Effects of the Invention As described above, the present invention improves the particle size of the pigment, which is a component of the resin used as the film for thin-film solar cells, by reducing the particle size to 5 μm or less. Short-circuit defects can be eliminated, and this has a great effect on the solar cell manufacturing process.
第１図は従来の樹脂をスクリーン印刷によシ薄膜太陽電
池素子に塗布し、パッシベーション膜を形成した時のシ
ョート不良発生の様子を示した断面図、第２図は従来の
樹脂と本発明の薄膜太陽電池用パッシベーション樹脂を
スクリーン印刷した時の印刷前後のショート不良数の変
化を示した図、第３図はパッシベーション樹脂をショー
ト不良のまったくない薄膜太陽電池上にスクリーン印刷
した時の樹脂の顔料粒径とショート不良発生率の関係を
示した図である。
１・・・・・・透光性絶縁基板、２・・・・・・第一電
極、３・・・・・・非晶質シリコン層、４・・・・・・
第二電極、６・・・・・・エポキシ樹脂、６・・・・・
・顔料粒子、７・・・・・・スクリーンマスク、８・・
・・・・スキージ。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図
第３図
ａ ＆ （μｆＬ）Figure 1 is a cross-sectional view showing how a short circuit occurs when a conventional resin is applied to a thin-film solar cell element by screen printing to form a passivation film. A diagram showing the change in the number of short-circuit defects before and after printing when a passivation resin for thin-film solar cells was screen printed. Figure 3 shows the pigment of the resin when the passivation resin was screen-printed on a thin-film solar cell with no short-circuit defects. FIG. 3 is a diagram showing the relationship between particle size and short-circuit failure occurrence rate. DESCRIPTION OF SYMBOLS 1... Translucent insulating substrate, 2... First electrode, 3... Amorphous silicon layer, 4...
Second electrode, 6...Epoxy resin, 6...
・Pigment particles, 7...Screen mask, 8...
... Squeegee. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 3 a & (μfL)
Claims (1)
脂において、上記樹脂の成分である顔料の粒径を５μｍ
以下に微細化したことを特徴とする薄膜太陽電池用パッ
シベーション樹脂。In the resin used as a passivation film for thin-film solar cells, the particle size of the pigment that is a component of the resin is 5 μm.
A passivation resin for thin-film solar cells that is characterized by the following micronization.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59066940A JPS60210882A (en) | 1984-04-04 | 1984-04-04 | Passive resin for thin film solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59066940A JPS60210882A (en) | 1984-04-04 | 1984-04-04 | Passive resin for thin film solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60210882A true JPS60210882A (en) | 1985-10-23 |
Family
ID=13330503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59066940A Pending JPS60210882A (en) | 1984-04-04 | 1984-04-04 | Passive resin for thin film solar cells |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60210882A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63299171A (en) * | 1987-05-28 | 1988-12-06 | Kyocera Corp | Photovoltaic device |
| US5637156A (en) * | 1994-09-22 | 1997-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Resin Composition and an electronic device using the same |
| US6525261B1 (en) | 1994-09-22 | 2003-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Resin composition and an electronic device using the same |
-
1984
- 1984-04-04 JP JP59066940A patent/JPS60210882A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63299171A (en) * | 1987-05-28 | 1988-12-06 | Kyocera Corp | Photovoltaic device |
| US5637156A (en) * | 1994-09-22 | 1997-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Resin Composition and an electronic device using the same |
| US6525261B1 (en) | 1994-09-22 | 2003-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Resin composition and an electronic device using the same |
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