JPH02223924A - Display panel manufacturing method - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for forming a flat display panel using liquid crystal, and more particularly to a method for forming a low resistance electrode wiring.

[Conventional technology]

Transparent substrate such as glass” Second, thin film transistor (TFT)
The so-called active matrix display, which is formed by forming switch elements such as and laminated with electro-optical materials such as liquid crystal, is a display suitable for large area and high definition, as described in IEE, Proceedings 59. (
1971), page 1566 (Proeeedings
of IEEE, 59, p1566 (1971
), amorphous silicon (a-8
TFTs using i) and TFTs using polycrystalline silicon (p-3i) are being actively researched and developed. Using this method, displays with diagonal dimensions of 10 inches or more have been developed.

In consideration of increasing the area, it is necessary to simplify the manufacturing process to reduce the probability of defect occurrence and improve the yield of panels. In addition, when looking at the characteristics of the panel,
Since the influence of voltage delay in wiring increases, it is essential to reduce wiring resistance.

[Problem to be solved by the invention]

To solve this problem, conventional structures used thin metal films to form electrodes, but for this purpose, vapor deposition was used.

This requires a film forming process such as sputtering and a processing process for the film, which poses a problem in simplifying the manufacturing process.

An object of the present invention is to provide a low-resistance electrode wiring structure using a simple process.

[Means to solve the problem]

In order to achieve the above object, in the present invention, a voltage is selectively applied to a patterned conductor having a relatively high resistance, thereby performing plating or the like to lower the resistance.

〔Example〕

An embodiment of the present invention will be described below with reference to FIG. First, the first conductive thin film 2 is patterned.

The second conductor layer is partially formed by applying a voltage to the parts where low resistance is required to form island-like separated parts and mutually connected parts, and using methods such as electrolytic plating or electrodeposition. Laminated according to the purpose. For example, I T as the first conductive thin film.
If O (Indium Tin Oxide) is used,
By laminating the second conductor layer only on the display electrodes and wiring portions of the display, the TIO etching step can be completed only once.

FIG. 2 is a modification of the embodiment shown in FIG. (a) First, a silicon thin film 5 is formed as a first conductive thin film on a glass substrate. (b) Next, a metal thin film 6 is laminated as a second conductor layer by a plating method or the like. (Q) An alloy (silicide) 7 of silicon and metal thin film is formed by heat treatment or the like. (d)
Remove excess second conductive layer.

By this method, an alloy such as silicide can be easily formed partially.

FIG. 3 is a modification of FIG. 2. That is, instead of forming the second conductor layer by plating, a conductor or a conductor-dispersed composite 8 is partially applied by a printing method, and then a silicide or highly doped silicon thin film layer is formed by heat treatment. In this method, the second conductor layer 8 is formed and finally the second conductor layer 8 is removed. According to this method, there is no restriction on the pattern for applying an electric field by plating or the like, and the manufacturing process is simplified. Another advantage is that the pattern accuracy of the second conductor layer 8 does not need to be so precise.

〔Effect of the invention〕

According to the present invention, since portions with different resistances can be formed by patterning twice, the manufacturing process is simplified and large-area panels can be easily manufactured.

[Brief explanation of the drawing]

FIG. 1 is a plan view and a sectional view showing an embodiment of the invention, FIG. 2 is a sectional view showing a modification of the invention, and FIG. 3 is a diagram showing still another modification of the invention. be. -13; Figure 2

Claims (1)

[Claims] 1. In an active matrix liquid crystal display in which a TFT and a liquid crystal are laminated on a glass substrate, a second conductive layer is laminated while applying an electric field to a portion of the first conductive thin film. A method of manufacturing a display panel characterized by using structured electrode wiring. 2. A method for forming a display panel according to claim 1, characterized in that ITO (Indium Tin Oxide) is used as the first conductive thin film. 3. A display panel according to claim 1, characterized in that silicon is used as the first conductive thin film, metal is used as the second conductive layer, and the silicon alloy (silicide) is formed by heat treatment after lamination. manufacturing method. 4. The method of manufacturing a display panel according to claim 3, characterized in that the second conductor layer is made of platinum, nickel, molybdenum, or tungsten.