JPS60184681A - Amorphous silicon carbide film for coating - Google Patents
Amorphous silicon carbide film for coatingInfo
- Publication number
- JPS60184681A JPS60184681A JP59040961A JP4096184A JPS60184681A JP S60184681 A JPS60184681 A JP S60184681A JP 59040961 A JP59040961 A JP 59040961A JP 4096184 A JP4096184 A JP 4096184A JP S60184681 A JPS60184681 A JP S60184681A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon carbide
- amorphous silicon
- hardness
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011248 coating agent Substances 0.000 title claims abstract description 26
- 238000000576 coating method Methods 0.000 title claims abstract description 26
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910000077 silane Inorganic materials 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims abstract 3
- 230000008021 deposition Effects 0.000 claims abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000005457 ice water Substances 0.000 claims 1
- 239000002994 raw material Substances 0.000 abstract description 6
- 229910003460 diamond Inorganic materials 0.000 abstract description 4
- 239000010432 diamond Substances 0.000 abstract description 4
- 239000004215 Carbon black (E152) Substances 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 abstract description 2
- 229930195733 hydrocarbon Natural products 0.000 abstract description 2
- 150000002430 hydrocarbons Chemical class 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical group [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
技術分野
本発明は非晶質炭化珪素膜に関し、特に表面保護用のコ
ーテイング膜に関するものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to an amorphous silicon carbide film, and more particularly to a coating film for surface protection.
従来技術
機械的ｒＩｊｒＩｉにさらされるたとえば情報読取用の
ヘッド先端部や、汚染を嫌う半導体装置のチップ表面な
どは、外部環境から物理的および化学的に保護してやる
必要がある。このような目的のために、従来からしばし
ば被保護体の表面を各ｆ１樹脂などの被膜でコーティン
グする方法が採られてきｌこ 。BACKGROUND OF THE INVENTION For example, the tip of an information reading head, which is exposed to mechanical rIjrIi, and the chip surface of a semiconductor device, which is sensitive to contamination, must be physically and chemically protected from the external environment. For this purpose, a method of coating the surface of the object to be protected with a film of each f1 resin has been often adopted.
これらのコーテイング膜に用いられる！ｌ！！ｌ負の主
な特性としく、前述σ戸＼ツドに関しては特に耐摩耗性
に優れたＩ！質のものであるとともに摩擦熱に対しても
安定であることがめられ、半導体装置に関しでは特に化
学的汚染に対して十分安定であるとともに電気絶縁的特
性も必要である。これらの特性に加えてさらに重要な問
題として、被保護体ａｌｆｉとの密着性の問題がある。Used in these coating films! l! ! The main negative characteristic is I!, which has particularly excellent wear resistance with respect to the above-mentioned σdoor\tsudo. In addition to being of high quality, it is also required to be stable against frictional heat. For semiconductor devices, in particular, it is necessary to be sufficiently stable against chemical contamination and to have electrically insulating properties. In addition to these characteristics, a more important problem is the problem of adhesion to the object to be protected alfi.
たとえばコーテイング膜のｆｉ！度が高い場合、被保護
体との界面において高応力が生じて、この硬くて脆い（
硬いものは一般に脆性が高い）被膜に割れがｑじたり剥
ｆｆ１ｌることか多かった。For example, coating film fi! If the temperature is high, high stress will occur at the interface with the protected object, causing this hard and brittle (
(Hard materials are generally more brittle) The coating often cracked or peeled off.
したがって、上記の秒々の特許を兼む備λかつに容性の
侵れたコーディング膜を形成するごとはノ１−んに置部
てあり、たとえ可能であるとしでも、（れは少雑なプＥ
１（ニスと高度な成膜技術を必要とし、実用に供し得る
ことは困難であった。Therefore, forming a coating film with both the above-mentioned patent characteristics and high capacitance is a priority, and even if it were possible, it would be a little complicated. Napu E
1 (requires varnish and advanced film-forming technology, making it difficult to put it to practical use.
発明の目的
不発１１１Ｊの目的は、コーディング膜どしてめられる
上述の諸性性を並ね備えかつ密着性の何れた非晶質炭化
珪素ｉを提供することである。OBJECTS OF THE INVENTION The purpose of FUJIFILM 111J is to provide an amorphous silicon carbide i that has all of the above-mentioned properties required for a coating film and has good adhesion.
発明の概要
ＣＶ Ｄ法によって形成される本発明Ｇ−，，Ｌ’Ｑ非
晶賀炭化珪免膜の特徴は、前記膜の厚さ方向において珪
素と炭素の組成比が変化さｔられ−（おり、それｋよっ
て前記膜の厚さ方向においで技化する硬度を右し１いる
こと１−ある。Summary of the Invention The characteristics of the G-, L'Q amorphous silicon carbide film of the present invention formed by the CVD method are that the composition ratio of silicon and carbon is varied in the thickness direction of the film. This determines the hardness of the film in the thickness direction.
発明の実施例
まず１本邦Ｉｖ」にＪる］［品質炭化珪素膜の形成のた
め（ご用いられたＣＶＤ法の一実施例であるグロー放電
分解法についてｖ２明づる。この＠膜装置の楊或は）と
該分野の技術右辺に周知のものである。Embodiments of the Invention First, we will explain the glow discharge decomposition method, which is an example of the CVD method used, for the formation of quality silicon carbide films. or) is well known to those skilled in the art.
卯料戸ｖスとしく、シランガス（たとえば３＋Ｈ＋。Uryoto vs Shiki, silane gas (for example 3+H+).
Ｓｉ ２ ＬＬなど）と炭化水糸ガス（たとえばＣＨ４
、（：、ｙ Ｈａ 、 Ｃ−１１ａ 、 Ｃ４ｔｌ＋
ｏなど）が用いられ、場（１によＺ（ト１□が希釈ガス
として用いられた。これらの）ガスを混合して反応至へ
供給し、３００ｍ丁ｏｒｒ稈麿のガス圧に保持した状態
で５０Ｗ程度のバ１ノーの高周波を印加してグロー放電
を発生させることにより、原料ガスを分解反応させて１
「晶′ｆｉυＬ化１３素股を作成した。この非晶質炭化
珪素腔のＳｉとＣの組成比を任意に変化させるためには
、簡易で一般的によく採用される原料ガスの原子比を調
節づる方法が用いられた。Si 2 LL, etc.) and hydrocarbon fiber gas (e.g. CH4
, (:,yHa,C-11a,C4tl+
The gases were mixed and supplied to the reaction mixture, and the gas pressure was maintained at 300 m orr. By applying a high frequency wave of approximately 50W to generate a glow discharge, the raw material gas is decomposed and reacted.
``We created 13 crystalline elements.In order to arbitrarily change the composition ratio of Si and C in this amorphous silicon carbide cavity, we can adjust the atomic ratio of the raw material gas, which is a simple and commonly used method. The following method was used.
このようにして形成された非晶質炭化珪素をａ−ｓｔ
Ｘｃ、−、： Ｈで表わづ。ここでａは非晶質（アモル
ファス）を表わし、× （０≦×≦１）はＳｌとＣの組
成比を決定４る変ｌＩ′ｔあり、１−口Ｊ吸蔵されてい
る水素を表わしている。第１図は、を地４１ｍ ５０℃
において形成されたこのような非晶質炭化珪素喚の変数
× （横軸）に対する硬度変化（縦軸）を示したもので
あり、ｘ’−０，５ｆｊ近で最高の酸１良の膜が得られ
、それからずれるに従って硬度が減少するのがわかる。The amorphous silicon carbide thus formed is a-st
Xc, -,: Represented by H. Here, a represents amorphous, × (0≦×≦1) is a variable lI't that determines the composition ratio of Sl and C, and 1-J represents hydrogen occluded. There is. Figure 1 shows the ground at 41m and 50℃.
The graph shows the change in hardness (vertical axis) against the variable x (horizontal axis) for such amorphous silicon carbide formed in It can be seen that the hardness decreases as the distance from this value increases.
なお通常は約士数％の原子比の水素が含有されでいるが
、この含有邑の多少の変動は上記の硬度に対しＣあまり
影響を及ぼさないようである。Although hydrogen is usually contained in an atomic ratio of about a few percent, slight variations in the hydrogen content do not seem to have much of an effect on the above-mentioned hardness.
そこで、コーテイング膜形成の初期には×＝０゜５以外
の値になるように原料ガス流量比を制御し、その後にｘ
値を０．５に近づ（ブることによって、（のコーテイン
グ膜の表面は（ヌープ硬度において１５００・〜３００
ＯＮ／μｍ２程度の）＾い硬度を有しながら、被保護体
との界面におい°（はそれに比べて低い硬度を有する保
１！膜を形成することが可能となる。またこのＩｉＩ度
比は、連続的変化またはステップ状の変化のいずれにお
いても実施することができる。このようにして形成され
た保護膜では、界面付近の低硬度の領域が被保護体と表
面近くの硬質コーティング層との間の＠衝打的な役ν１
りを果たし、界面に発生する応力を緩和してｋｔ”ｉ’
Ｊ、 Ｉｉ！の割れや剥離を防止する働きをするので、
前述の密着性が大きく改善されることとなる。Therefore, in the initial stage of coating film formation, the raw material gas flow rate ratio is controlled to a value other than x = 0°5, and then
By approaching the value to 0.5, the surface of the coating film of (1500 to 300 on the Knoop hardness)
It is possible to form a film that has a high hardness (on the order of ON/μm2) but has a lower hardness at the interface with the protected object.Also, this IiI degree ratio is , can be carried out in either a continuous change or a step-like change.In the protective film formed in this way, a region of low hardness near the interface is formed between the object to be protected and the hard coating layer near the surface. Between @ Shocking role ν1
kt"i' by relaxing the stress generated at the interface
J, Ii! It works to prevent cracking and peeling of
The above-mentioned adhesion is greatly improved.
なお第１図かられかるように、ｘ−０，５からどちらに
ずれても低硬度の膜となるが、そのＳ１過剰側とＣ過剰
側とのいずれを利用するかは被保護体の性質やコーディ
ングの目的に合わせて選択づることができる。As can be seen from Figure 1, the film will have low hardness no matter which direction it deviates from x-0. You can choose according to your coding purpose.
第２図は、本発明によるコーテイング膜を静電ＭＩＮＩ
型のメモリディスク（たとえばビデオディスク）の走査
子であるダイヤモンドヘッドに応用した例を示している
。図において、たとえばダイヤモンドからなる針基材１
は先端部で断面積が小さくなる柱状に加工されており、
その基材の一側面にＡＮやｉｎなどからなる信号読出し
のための電極２が形成されている。電極２を保護するた
めに、その電極２が形成された基材１の側面に本発明に
よる非晶質炭化珪素ｌ！３が約５０００Ａの厚さに形成
される。このような走査子は電極２が顔を出している面
でメモリディスク上を摺動Ｊるので、その電極保護膜は
高い耐摩耗性がめられ、かつ割れや剥離の生じないもの
でなければならない。FIG. 2 shows the electrostatic MINI coating film according to the present invention.
An example of application to the Diamond Head type memory disk (eg, video disk) scanner is shown. In the figure, a needle base material 1 made of diamond, for example.
is machined into a columnar shape with a smaller cross-sectional area at the tip.
An electrode 2 for signal reading made of AN, IN, etc. is formed on one side of the base material. In order to protect the electrode 2, amorphous silicon carbide according to the present invention is coated on the side surface of the base material 1 on which the electrode 2 is formed! 3 is formed to a thickness of about 5000A. Since such a scanner slides on the memory disk on the surface where the electrode 2 is exposed, the electrode protective film must have high wear resistance and be free from cracking and peeling. .
既述のように、本発明によるコーナインタ罎はこれらの
条件を兼ね備えたものであり、とのよ−）なヘッドのた
めの仮れたコーテイング膜であることが確かめられた。As mentioned above, it has been confirmed that the corner interlayer according to the present invention satisfies these conditions and is a temporary coating film for such heads.
同様に、本発明によるコーテイング膜は磁気ｉ−ブなど
と相対的な１１！擦運動を４る磁気ヘッドのコーティン
グ月としても優れたものである。Similarly, the coating film according to the present invention is 11! It is also excellent as a coating for magnetic heads that perform rubbing motion.
第３図は半導体装置に本発明によるコーテイング膜を施
した一例を示す概略図である。FIG. 3 is a schematic diagram showing an example of a semiconductor device coated with a coating film according to the present invention.
図において、基板１−上の半導体装＠２′は本発明によ
る保護膜３−によって覆われている。前述のように、半
導体装置の保護膜として備えな（ブればならない特性は
化学的安定性のみならず高い電気絶縁的性質が必要であ
る。化学的安定性については、炭化珪素は本来非常に安
定なものである。In the figure, a semiconductor device @2' on a substrate 1- is covered with a protective film 3- according to the invention. As mentioned above, the properties that must be possessed as a protective film for semiconductor devices include not only chemical stability but also high electrical insulating properties. It is stable.
しかし通常の炭化珪素は電気的には半導体的性質を有し
ているが、４（発明によって形成されるよ）な非晶質の
戻化珪木膜は通常高い抵抗値を示し、たとえば１０１”
Ｏａｍのような絶縁的高抵抗を示Ｊｂのが１ｑられて
いる。したが〕で本発明によるコーティング］Ｑは、第
３図のように半導体ｆｉｗの保鏡膜としＣち擾れた特性
を有するｂのである。However, although ordinary silicon carbide has electrically semiconducting properties, the amorphous regenerated silicon film (formed by the invention) usually exhibits a high resistance value, for example 101"
Jb, which exhibits high insulating resistance like Oam, is shown in 1q. However, the coating according to the present invention] Q is a mirror film of the semiconductor fiw as shown in FIG.
発明の効果
以上のように、本発明によれば、高い表面硬度と優れた
化学的安定性と高い電気的絶ｆｉ姓を有しかつ慢れた密
着性をち４る」−ティング用非晶質炭化珪素股を捉供】
ることができる。Effects of the Invention As described above, according to the present invention, an amorphous material for coating has high surface hardness, excellent chemical stability, high electrical resistance, and excellent adhesion. Capture the quality silicon carbide crotch]
can be done.
ｗ４１図は、本発明による非晶質１）１化珪）：１膜に
おける、珪素と炭素の組成比に関する硬１褒変化を示Ｊ
゛図ぐある。
餉１２図は、静電容量型のメモリディスクの走査子ぐあ
るダイヤモンドヘッドに、本発明によるコーう゛イシク
税を形成した例せ示４図ぐある。
第３図（：１．、本発明によるコーテイング膜を半導体
肢ホに応用した例を示す図である。
図においｒ、１は基体、２はＮ極、３は保は膜、１′は
基板、２−は半導体装置、３−は保護膜を示す。
特許出願人 シャープ株式会社
第１図
ノ（イ、Ｂ
第２図
第３図Figure w41 shows the change in hardness with respect to the composition ratio of silicon and carbon in the amorphous 1) silicon monocide: 1 film according to the present invention.
There is a diagram. Figures 12 and 12 are four diagrams illustrating a diamond head with a scanning element of a capacitance type memory disk, in which a wiring board according to the present invention is formed. Figure 3 (:1.) is a diagram showing an example in which the coating film according to the present invention is applied to a semiconductor limb. , 2- indicates a semiconductor device, and 3- indicates a protective film. Patent applicant: Sharp Co., Ltd.
Claims (8)
上に形成される非晶質間化珪素膜であって、 前記膜の厚さ方向において前記膜の珪素と炭素の組成比
が変化させられており、それによって前記膜の厚さ方向
において変化する硬度を有していることを特徴とするコ
ーティング用非晶質炭化珪素膜。(1) An amorphous interstitial silicon film formed on the surface of a protected object by CVD (gas reaction deposition) droplets, the composition ratio of silicon and carbon of the film changing in the thickness direction of the film. 1. An amorphous silicon carbide film for coating, characterized in that the film has a hardness that varies in the thickness direction of the film.
ＶＤ法であることを特徴とする特許請求の範囲第１項記
載のコーティング用非晶質炭化珪素膜。(2) The CVD method uses plasma C using glow discharge.
The amorphous silicon carbide film for coating according to claim 1, which is produced by a VD method.
護体との界面側で低いことを特徴とする特許請求の範囲
第１項または第２項記載のコーティング用非晶質炭化珪
素膜。(3) The amorphous carbonized coating according to claim 1 or 2, wherein the hardness is high on the surface side of the film and low on the interface side with the object to be protected. silicon film.
ス（゛ある珪素元素を含むガスと炭素元素を含むガスと
の８！石比を変えることによって変化させられているこ
とを特徴とする特許請求の範囲第′１項ないし第３項の
いずれかの項に記載されたコーティング用非晶質炭化珪
素膜。(4) The above composition ratio is the original deposition rate in the above CVD method)5
(any one of claims '1 to 3) characterized in that the gas is changed by changing the ratio of a certain silicon element-containing gas to a carbon element-containing gas. Amorphous silicon carbide film for coating described in the section.
前記炭素元素を含むガスが炭化氷水ガスであることを特
徴とする特許請求の範囲第４項記載のΦ」−テ、Ｃング
用非晶質炭化珪素膜。(5) The gas containing silicon thread is silane gas,
5. The amorphous silicon carbide film for Φ''-te and carbon according to claim 4, wherein the gas containing the carbon element is a carbonized ice water gas.
の走査子のタイヤモンドヘッドであることを特徴とする
特許請求の範囲第１項ないし第５項のいずれかの項に記
載されたコーティング用非晶質炭化珪素膜。(6) The object to be protected is a tire head of a scanner for a capacitive memory disk, as described in any one of claims 1 to 5. Amorphous silicon carbide film for coating.
する特許請求の範囲第１項ないし第５項のいずれかの項
に記載されたコーティング用非晶質炭化Ｉｉ素膜。(7) The amorphous Ii carbide film for coating as set forth in any one of claims 1 to 5, wherein the object to be protected is a magnetic head.
する特許請求の範囲第１項ないし第５項記載のコーティ
ング用非晶質炭化珪素膜。(8) The amorphous silicon carbide film for coating according to any one of claims 1 to 5, wherein the object to be protected is a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59040961A JPS60184681A (en) | 1984-03-02 | 1984-03-02 | Amorphous silicon carbide film for coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59040961A JPS60184681A (en) | 1984-03-02 | 1984-03-02 | Amorphous silicon carbide film for coating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60184681A true JPS60184681A (en) | 1985-09-20 |
| JPS6366902B2 JPS6366902B2 (en) | 1988-12-22 |
Family
ID=12595076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59040961A Granted JPS60184681A (en) | 1984-03-02 | 1984-03-02 | Amorphous silicon carbide film for coating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60184681A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61235564A (en) * | 1985-04-11 | 1986-10-20 | Toshiba Corp | Member whose surface is treated with nonsingle crystal silicon film and its surface treatment |
| JPH01246118A (en) * | 1988-03-26 | 1989-10-02 | Semiconductor Energy Lab Co Ltd | Composite carbon coating film having high heat-resistance and production thereof |
| JPH07102377A (en) * | 1994-07-30 | 1995-04-18 | Semiconductor Energy Lab Co Ltd | Carbon coating film or coating film essentially comprising carbon |
| WO1996016202A1 (en) * | 1994-11-21 | 1996-05-30 | Friedrich Grohe Ag | Packing element, in particular for shutting-off and regulating means, and process for producing the same |
| US6207281B1 (en) | 1988-03-07 | 2001-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
| US6224952B1 (en) | 1988-03-07 | 2001-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
| US6249020B1 (en) | 1997-07-29 | 2001-06-19 | Micron Technology, Inc. | DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate |
| US6731531B1 (en) | 1997-07-29 | 2004-05-04 | Micron Technology, Inc. | Carburized silicon gate insulators for integrated circuits |
| US6835638B1 (en) | 1997-07-29 | 2004-12-28 | Micron Technology, Inc. | Silicon carbide gate transistor and fabrication process |
| US7109548B2 (en) | 1997-07-29 | 2006-09-19 | Micron Technology, Inc. | Operating a memory device |
| US7196929B1 (en) * | 1997-07-29 | 2007-03-27 | Micron Technology Inc | Method for operating a memory device having an amorphous silicon carbide gate insulator |
| JP2009525397A (en) * | 2006-01-30 | 2009-07-09 | ユーロピアン エアロノティック ディフェンス アンド スペース カンパニー イーエーディーエス フランス | Thin film multilayer structure, component including the structure, and method for depositing the structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57118082A (en) * | 1980-07-30 | 1982-07-22 | Avco Corp | Surface treatment for carbon |
| JPS60145377A (en) * | 1984-01-09 | 1985-07-31 | Sharp Corp | Amorphous silicon carbide film |
-
1984
- 1984-03-02 JP JP59040961A patent/JPS60184681A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57118082A (en) * | 1980-07-30 | 1982-07-22 | Avco Corp | Surface treatment for carbon |
| JPS60145377A (en) * | 1984-01-09 | 1985-07-31 | Sharp Corp | Amorphous silicon carbide film |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61235564A (en) * | 1985-04-11 | 1986-10-20 | Toshiba Corp | Member whose surface is treated with nonsingle crystal silicon film and its surface treatment |
| US6583481B2 (en) | 1988-03-07 | 2003-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
| US6207281B1 (en) | 1988-03-07 | 2001-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
| US6224952B1 (en) | 1988-03-07 | 2001-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
| US7144629B2 (en) | 1988-03-07 | 2006-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
| US6265070B1 (en) | 1988-03-07 | 2001-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
| JPH01246118A (en) * | 1988-03-26 | 1989-10-02 | Semiconductor Energy Lab Co Ltd | Composite carbon coating film having high heat-resistance and production thereof |
| JPH07102377A (en) * | 1994-07-30 | 1995-04-18 | Semiconductor Energy Lab Co Ltd | Carbon coating film or coating film essentially comprising carbon |
| WO1996016202A1 (en) * | 1994-11-21 | 1996-05-30 | Friedrich Grohe Ag | Packing element, in particular for shutting-off and regulating means, and process for producing the same |
| US6307775B1 (en) | 1997-07-29 | 2001-10-23 | Micron Technology, Inc. | Deaprom and transistor with gallium nitride or gallium aluminum nitride gate |
| US6731531B1 (en) | 1997-07-29 | 2004-05-04 | Micron Technology, Inc. | Carburized silicon gate insulators for integrated circuits |
| US6794255B1 (en) | 1997-07-29 | 2004-09-21 | Micron Technology, Inc. | Carburized silicon gate insulators for integrated circuits |
| US6835638B1 (en) | 1997-07-29 | 2004-12-28 | Micron Technology, Inc. | Silicon carbide gate transistor and fabrication process |
| US7005344B2 (en) | 1997-07-29 | 2006-02-28 | Micron Technology, Inc. | Method of forming a device with a gallium nitride or gallium aluminum nitride gate |
| US7109548B2 (en) | 1997-07-29 | 2006-09-19 | Micron Technology, Inc. | Operating a memory device |
| US6249020B1 (en) | 1997-07-29 | 2001-06-19 | Micron Technology, Inc. | DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate |
| US7196929B1 (en) * | 1997-07-29 | 2007-03-27 | Micron Technology Inc | Method for operating a memory device having an amorphous silicon carbide gate insulator |
| JP2009525397A (en) * | 2006-01-30 | 2009-07-09 | ユーロピアン エアロノティック ディフェンス アンド スペース カンパニー イーエーディーエス フランス | Thin film multilayer structure, component including the structure, and method for depositing the structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6366902B2 (en) | 1988-12-22 |
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