Sattel et al., 1995 - Google Patents
Nucleation during deposition of hydrocarbon ions as a function of substrate temperatureSattel et al., 1995
- Document ID
- 8890129865767295111
- Author
- Sattel S
- Weiler M
- Gerber J
- Giessen T
- Roth H
- Scheib M
- Jung K
- Ehrhardt H
- Robertson J
- Publication year
- Publication venue
- Diamond and related materials
External Links
Snippet
Hydrogenated carbon films were prepared from a highly ionized plasma beam source using acetylene. The films deposited at low temperatures have a very high sp3 fraction, density, compressive stress and hardness. The sp3 fraction, density and stress are found to fall …
- 238000010899 nucleation 0 title abstract description 17
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5747118A (en) | Plasma enhanced chemical transport process for forming diamond films | |
Liu et al. | Diamond chemical vapor deposition: nucleation and early growth stages | |
Wang | Research on carbon nitrides | |
Sharda et al. | Biased enhanced growth of nanocrystalline diamond films by microwave plasma chemical vapor deposition | |
JP3136307B2 (en) | Diamond mounting substrate for electronic applications | |
Satyanarayana et al. | Low threshold field emission from nanoclustered carbon grown by cathodic arc | |
EP0221309A1 (en) | Metallic magnetic recording medium | |
Rawles et al. | Mechanism of surface smoothing of diamond by a hydrogen plasma | |
Gerber et al. | Investigations of diamond nucleation on aC films generated by dc bias and microwave plasma | |
Sattel et al. | Nucleation during deposition of hydrocarbon ions as a function of substrate temperature | |
US7128889B2 (en) | Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries | |
Chen et al. | High-density silicon and silicon nitride cones | |
Yang et al. | Synthesis of diamond films and nanotips through graphite etching | |
US6902716B2 (en) | Fabrication of single crystal diamond tips and their arrays | |
Esteve et al. | Diamond and diamond-like carbon films | |
Meilunas et al. | Diamond nucleation on surfaces using carbon clusters | |
Sattel et al. | Ion induced nucleation of diamond | |
Sharda et al. | Strong adhesion in nanocrystalline diamond films on silicon substrates | |
Angus et al. | Diamond and" diamondlike" phases grown at low pressure: growth, properties and optical applications | |
JP3082979B2 (en) | Method for forming a-DLC-Si film | |
National Research Council et al. | Status and applications of diamond and diamond-like materials: An emerging technology | |
Xiao et al. | Synthesis and field emission properties of hybrid structures of ultrananocrystalline diamond and vertically aligned carbon nanofibers | |
Nistor et al. | Structural studies of diamond thin films grown from dc arc plasma | |
Zhou et al. | Formation and structure of aC/nanodiamond composite films by prolonged bias enhanced nucleation | |
Chuang et al. | Effect of morphology on electron emission characteristics of pulsed laser deposited diamond-like films |