JPS60154629A - Pressure contact semiconductor device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a pressure-contact type semiconductor device, and in particular to a semiconductor device having a structure in which a solder plate or the like is pressure-bonded to a semiconductor substrate without using any brazing material. It is.

[Critus of invention]

There are two types of press-contact type semiconductor devices, the first of which is a device in which the semiconductor substrate is soldered to an auxiliary support plate (Special Publication Publication No. 47-1972).
4818), and the second is one in which the temperature compensating plate and the semiconductor substrate are brought into pressure contact without using an auxiliary support (Japanese Patent Publication No. 31926/1972).

The auxiliary support is made of molybdenum or tungsten, which has a coefficient of thermal expansion similar to that of the material, and the temperature tW compensating plate is made of molybdenum or tungsten, which adheres to and separates from the electrode film on the semiconductor substrate. i.Tungsten base is used.

At the front, curvature occurs due to the difference in thermal expansion coefficient between the wax and the curvature, and the degree of curvature becomes bL thicker at the opening of the semiconductor substrate.
Not suitable for large objects.

In the latter case, since the semiconductor substrate is not soldered to the auxiliary support, no deceptive curves occur, but means for regulating the movement of each member is required.

FIG. 1 shows a conventional latter layer pressure contact type diode 100.

Ceramic cylinder 101 has a copper outer shell 104 through flexible flanges 102 and 103 at both ends thereof.
, 105 are provided to form an airtight container. A silicon substrate 106 in which an I)n junction is formed between the upper and lower external electrodes 104 and 105 is arranged. As shown in FIG. 2, aluminum electrode films 107 and 108 are provided on the upper and lower main surfaces of the silicon substrate 106 by sintering after being vapor-deposited, and an aluminum solder film 1 is provided on the outer periphery of the top surface.
09, the silicon ring 110 having no pn junction is stuck and broken. A pn junction is formed on the side periphery of the silicon substrate 106 processed into an inclined surface, and silicone rubber 111 is applied as a female chemotactic agent to the second side. Electrode films 107, 108
Temperature compensating plates 112 and 113 are contacted. An aluminum layer 114, 115 is provided on the contact surface by vapor deposition. - The upper part of the outer electrode 104 inside the container has four parts 10.
4a, and a steel plate 116 is fixed thereto.

A silver plate 117 is also fixed to the lower part of the upper external electrode 105 inside the container. The silicon substrate 106 shown in FIG.
It is held between the two.

A Teflon guide @118 is provided inside the container.

This engages the flange portion 104b of the lower outer electrode 104 at the bottom and the silicon ring 110 at the top.

Above Nonoguchi <, silicon substrate t 06 , r7it1m
Since the compensating plates 112 and 113 move freely, it is necessary to provide a silicon ring 110, a recess 104a, a flange 104b, and a Teflon guide tube 118, resulting in a complicated structure.

The most important thing is that the tVA property test cannot be performed unless the silicon substrate 106 etc. is sealed in an airtight container, pressurized between the upper and lower external electrodes 104 and 105, and put into actual use condition. .

[Purpose of the invention]

SUMMARY OF THE INVENTION An object of the present invention is to provide a press-contact type semiconductor device that has a simple structure, is easy to align, and can be subjected to characteristic tests during assembly.

[Summary of the invention]

The feature of the present invention which achieves the above object is that a semiconductor substrate having an electrode film provided on both main surfaces between the internal electrodes is connected via a temperature compensating plate having a coefficient of thermal expansion close to that of the semiconductor substrate. A rectifying unit is formed by sandwiching the internal electrodes and applying pressure between the inward electrodes via pressure rings provided on the outer periphery of each internal electrode, and external electrodes are flexibly provided at both ends of the opening of the insulating tube. The inner and outer electrodes are sealed in an airtight container such that they are in contact with each other, and the pressurizing ring surrounds and engages the outer electrode which is in contact with the inner electrode.

[Embodiments of the invention]

FIG. 3 shows a pressure contact type diode 20 which is an embodiment of the present invention.
It shows 0.

In FIG. 3, a ceramic cylinder 201, Kovar flexible flanges 202, 203, upper and lower copper external electrodes 204,
205 forms an airtight container, and a rectifying unit 206 according to the present invention is sealed inside the container. As shown by disassembling the rectifier unit 206゛10 into the fourth garden, aluminum electrode films 207゜208 are provided on both main surfaces, and the end portion with the surface stabilizing material 209 provided on the inclined side surface is ν on the side surface. Steel internal electrodes 213,
214 will be contacted. Pressure tjGt 215, 216, which has an inner diameter slightly larger than the outer frame of the protrusions 213a, 214a of the internal electrodes 213, 214, are fitted, and as shown in FIG.
A temperature compensating plate 211 between the pair of internal electrodes 213 and 214,
A rectifying unit 206 is assembled in which a semiconductor substrate (silicon substrate) 210 is sandwiched and pressed together via 212 .

Teflon bolt 217 and nut 218 are pressed into pressure ring 215.
If they are provided at 4 to 8 locations on the outer periphery of 216 at equal intervals, the pressing force will be made uniform over the entire periphery. If the stabilizing material 209 shown in Table i is brought into contact with the bolt, the silicon substrate 210 will not move within the rectifying unit 206. Introvert &
It is necessary to insulate between 213 and 214, but the pressure ring 215
, 216 is made of an insulating material, the material 217 may be made of an insulating material, and the combination of materials can be selected arbitrarily. Since the rectifying unit 206 shown in FIG. 5 is not sealed in an airtight container and is in a state close to a finished product, it is possible to perform a characteristic test of the silicon substrate 210 at this stage, and it is determined that it is a good product. You can store it in a clean demarcated atmosphere as it is.

A non-defective product is sealed in an airtight container consisting of a ceramic cylinder 201, flanges 202, 203, and external electrodes 204, 205, as shown in FIG. An external electrode 204 is brazed to the lower opening of a ceramic cylinder 201 via a flange 202, and a separately prepared rectifying unit 206 is prepared.
Set. Next, the flange 2 provided on the external electrode 204
03 is brazed to the upper opening of the ceramic cylinder 201 to complete the air container, and the rectifying unit 206 is sealed therein. Here, the external electrodes 204°205
The outer diameter of the convex portions 204a, 205a of the internal electrodes 213, 2
The protrusions 213a and 214a of No. 14 have the same dimensions and are slightly smaller than the inner diameter of the pressurizing rings 215 and 216, so the processing rings 215 and 216 are connected to the external electrode 20.
The rectifying unit 206 can be prevented from moving in the direction parallel to the contact surface within the container with the air 2 by surrounding the contact portion with the internal electrodes 213 and 214 of the air 2 and the internal electrodes 214 from the outer peripheral side. can.

6 and 7 each show other embodiments, and the same or equivalent parts as shown in FIGS. 3 to 5 are given the same reference numerals.

In the embodiment shown in FIG. 6, both the inner and outer electrodes 204, 205° 213
．． A recess is formed in the contact portion of 214, into which a core 219 is inserted. By installing the core 219, the rectifying unit 20
6 is prevented from rotating within the airtight container.

In the embodiment of FIG. 7, flat internal electrodes 213, 214 are used, and the working rings 215, 216 or internal electrodes 213, 2
The rectifying unit 206 and the external electrodes 204 and 205 are fitted together on the outer surface of the rectifying unit 206 and serves as a holding member.

In the embodiments shown in FIGS. 3 and 7, if the shape of the retaining portion between the pressure ring 215° 216 and the inner and outer electrodes 204, 205, 213° 214 is non-perfectly circular, the core shown in FIG. Even if 219 is not provided, the rotation of the rectifying unit 206 can be prevented.

In each embodiment, a bolt 217 and a nut 21 are used as the pressurizing means.
8 is used, but any means may be used instead as long as it is possible to apply pressure between the internal electrodes 213 and 214.

In actual use, a normal contact pressure is applied between the external electrodes 204 and 205, so the pressure applied to the rectifying unit 206 by pressure means such as bolts 217 and nuts 218 is temporary pressure welding, that is, it is applied during actual use. The rectifying unit 206 may be configured with a pressure lower than the pressure applied.

Note that the present invention is applicable not only to the illustrated diode but also to various pressure-contact type semiconductor devices such as transistors and Zyristors.

〔Effect of the invention〕

As described above, according to the present invention, it is possible to obtain a press-contact type semiconductor device that has a simple structure, is easy to align, and allows characteristic tests to be performed even during assembly.

[Brief explanation of drawings]

Figure 1 is a vertical cross-sectional view showing a conventional pressure contact diode, Figure 2
The figures are an exploded view of the main parts of the diode shown in Fig. 1, Fig. 3 is a vertical cross-sectional view of a press-contact type diode according to an embodiment of the present invention, Fig. 4 is an exploded view of the main parts of the diode shown in Fig. 3, and Fig. 5 The figure is a longitudinal sectional view showing a state in which the components shown in FIG. 4 are assembled as a rectifying unit, and FIGS. 6 and 7 are longitudinal sectional views of pressure contact diodes according to other embodiments of the present invention. be. 200... Press contact type diode, 201... Ceramic cylinder, 202, 203... Flange, 204, 20
5... External electrode, 206... Rectifier unit, 207,
208... Metal film, 209... Surface stabilizing material, 21
0...Silicon base, 211,212...Temperature compensation plate, 213°214...Internal electrode, 215,216...
... Pressure ring, 2137 ... Bolt, 218 ... Nut, 219 ... Core. Agent Patent Attorney Akio Naohashi, 1, 27, 312]

Claims (1)

[Claims] 1. A semiconductor substrate with an electrode film provided on its bidirectional surface between a pair of internal electrodes is sandwiched via a temperature compensating plate whose thermal expansion coefficient approximates that of the semiconductor substrate, and a pressure ring is provided around the outer periphery of each internal pole. A rectifying unit is formed by applying pressure between the inward electrodes through the insulating tube, and external electrodes are flexibly provided at both ends of the opening of the insulating tube, so that the inner and outer electrodes are in contact with each other in an airtight container. 1. A press-contact type semiconductor device, characterized in that the pressure ring surrounds and engages an external electrode that is in contact with an internal electrode. 2. In claim 1, both the inner and outer electrodes have a convex portion with approximately the same outer diameter, and both the inner and outer electrodes have convex portions of both the inner and outer t4iiS in which pressure rings having an inner diameter slightly larger than the outer diameter of the convex portion abut each other. A press-contact type semiconductor device, characterized in that the two are encircled and engaged.