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JPS60136145A - Charged particle analyzer - Google Patents

Charged particle analyzer

Info

Publication number
JPS60136145A
JPS60136145A JP58248819A JP24881983A JPS60136145A JP S60136145 A JPS60136145 A JP S60136145A JP 58248819 A JP58248819 A JP 58248819A JP 24881983 A JP24881983 A JP 24881983A JP S60136145 A JPS60136145 A JP S60136145A
Authority
JP
Japan
Prior art keywords
charged particle
deflection
deflection signal
deflector
generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58248819A
Other languages
Japanese (ja)
Inventor
Taketsugu Kodama
小玉 雄嗣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Shimazu Seisakusho KK
Original Assignee
Shimadzu Corp
Shimazu Seisakusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp, Shimazu Seisakusho KK filed Critical Shimadzu Corp
Priority to JP58248819A priority Critical patent/JPS60136145A/en
Publication of JPS60136145A publication Critical patent/JPS60136145A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252Tubes for spot-analysing by electron or ion beams; Microanalysers
    • H01J37/256Tubes for spot-analysing by electron or ion beams; Microanalysers using scanning beams

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (イ)産業上の利用分動 本発明はAES、SIMS、EPMAなどの荷電粒子分
析装置に係り、腸には石型粒子ビームを二次元走査する
光学系に関する。
DETAILED DESCRIPTION OF THE INVENTION (a) Industrial Application The present invention relates to charged particle analyzers such as AES, SIMS, and EPMA, and relates to an optical system for two-dimensionally scanning a stone-shaped particle beam in the intestine.

(ロ)従来技術 一般にこの種の荷電粒子分析装置には1、イオンや電子
などの石型粒子ビームの二次元走査用として電磁偏向型
のものや静電偏向型のものがある。
(B) Prior Art Generally, this type of charged particle analyzer includes an electromagnetic deflection type and an electrostatic deflection type for two-dimensional scanning of stone-shaped particle beams such as ions and electrons.

これらは、いずれも互いに直交配置されたX方向とY方
向の各偏向器に偏向信号を与えることにより走査か行な
われる。ところで、従来技術では偏向器に与える偏向信
号としては鋸歯状波の関数パターンだけであり、従って
、試料に対しては長方形のパターン走査ビか行なわれて
いない。このため、試料」二のある特定の部分のみを分
析することか黄1]かしく、分析時間が長くかかったり
、コンタミネーションの一因ともなるといった不具合を
生している。
Scanning is performed by applying a deflection signal to each of the X- and Y-direction deflectors arranged orthogonally to each other. By the way, in the prior art, only a sawtooth wave function pattern is used as the deflection signal given to the deflector, and therefore only a rectangular pattern scan is performed on the sample. For this reason, it is difficult to analyze only a certain part of the sample, resulting in problems such as long analysis time and contamination.

(ハ) 目 的 本発明は上述の問題点を解消し、長方形以外の形状につ
いても任意に荷電粒子ビームを走査できるようにするこ
とを目的とする。
(c) Purpose It is an object of the present invention to solve the above-mentioned problems and to enable a charged particle beam to scan shapes other than rectangles as desired.

に)構 成 本発明はこのような目的を達成するため、荷電粒子ビー
ムを偏向させる偏向器と、この偏向器に偏向信号を与え
る偏向信号発生器とを備えるとともに、前記偏向信号発
生器には所定の関数パターンか設定される関数発生器が
接続され、この関数発生器で前記偏向信号発生器の鱈向
信号を関数制御して、任意形状に荷電粒子ビームを走査
できるようにしている。
In order to achieve such an object, the present invention includes a deflector that deflects a charged particle beam, and a deflection signal generator that provides a deflection signal to the deflector. A function generator in which a function pattern is set is connected, and this function generator functions-controls the cod direction signal of the deflection signal generator so that the charged particle beam can be scanned in an arbitrary shape.

(ホ)実施例 以下、本発明を図面に示す一実施例に基づいて詳細に説
明する。なお、この実施例では外電偏向形イオン銃を備
えた荷電粒子分析装置に適用した場合について説明する
(E) Example Hereinafter, the present invention will be explained in detail based on an example shown in the drawings. In this embodiment, a case where the present invention is applied to a charged particle analyzer equipped with an external electric deflection type ion gun will be explained.

第1図は荷電粒子分析装置の静電容量型イオン銃の構成
図である。同図において、符号1は荷電粒子分析装置の
イオン銃、2はグリッド4とフィラメント6とでなるB
ayard Alpert型のイオン源、8はイオン引
出電極、10.12.14は各収束レンズ、16はイオ
ンビームを偏向させる偏向器である。この偏向器16は
、互いに平行して相対向する各一対の電極18a、18
b、20a、’20bがX方向(第1図の上下方向)と
Y方向(同図の紙面垂直方向)とに直交配置されて構成
される9′ 第2図は荷電粒子分析装置の偏向器と、この偏向器を駆
動制御する走査制御部の構成図である。
FIG. 1 is a configuration diagram of a capacitive ion gun of a charged particle analyzer. In the figure, numeral 1 is an ion gun of a charged particle analyzer, and 2 is a B consisting of a grid 4 and a filament 6.
An ayard Alpert type ion source, 8 an ion extraction electrode, 10, 12, and 14 convergent lenses, and 16 a deflector for deflecting the ion beam. This deflector 16 includes a pair of electrodes 18a and 18 that are parallel to each other and face each other.
b, 20a, and '20b are arranged orthogonally in the X direction (vertical direction in Figure 1) and the Y direction (perpendicular to the paper plane in the figure) 9' Figure 2 shows a deflector of a charged particle analyzer. FIG. 2 is a configuration diagram of a scanning control section that drives and controls this deflector.

偏向器16のX方向の一対の電極18a、18bにはこ
の電極18a、18bにX方向走査用の偏向電圧を与え
る第1□偏向信号発生器22が、また、Y方向の一対の
電極20a、2θbには、この電極20a、 20b 
!′cY方向走査用の偏向電圧を与える第2偏向信号発
生器24かそれぞれ接−されている。さらに、上記第1
と第2の各偏向信号発生器22.,24には所定の関数
パ、ターンが設定される関数発生器26が共通に接続さ
れている。
A pair of electrodes 18a and 18b in the X direction of the deflector 16 are provided with a first □ deflection signal generator 22 that applies a deflection voltage for scanning in the X direction to the electrodes 18a and 18b, and a pair of electrodes 20a and 20a in the Y direction are provided. For 2θb, these electrodes 20a, 20b
! 'c A second deflection signal generator 24 for providing a deflection voltage for scanning in the Y direction is connected to each of the second deflection signal generators 24. Furthermore, the above first
and a second respective deflection signal generator 22. , 24 are commonly connected to a function generator 26 in which a predetermined function pattern is set.

上記構成において、イオン源2で発生したイオンはイオ
ン引出電極8で引き出されて加速された後、各収束レン
ズ10,12.14で収束され、最後に偏向器1Gで静
電的に偏向を受ける。その際、イオンビームを二次元走
査するには、まず走査させたい三角形、台形、円等の所
要の形状に対応した関数パターンを関数発生器26で設
定する。関数発生器26は設定された関数パターンをX
成分とY成分とに分け、X成分に基づくX方向制御信号
を第1偏向信号発生器22に、また、Y成分に基づくY
方向制御信号を第2偏向信号発生器244ごそれぞれ出
力する。第1偏向信号発生器22は、関数発生器2Gか
ら与えられるX方向制御信号に応答して偏向篭手を変化
させる。第2偏向信号発生器24も同様に関数発生器2
6から与えられるY方向制御信号に応答して偏向電圧を
変化させる。従って、たとえは、台形形状の走査を行な
う場合には、X方向の一方の電極18aには第3図(a
lに示すような偏向電圧波形か与えられる。これに対向
する他方の電極1”8 bにはこれと逆極性の偏向電圧
波形が加えられる。また、Y方向の一方の電極20aに
は同図(b)に示すような偏向電圧波形か与えられ、こ
れに対向する他方の電極20bにはこれと逆極性の偏向
電圧波形か加えられる。これにより、イオンビームは偏
向器16で偏向されて同図(C)に示すような台形形状
に二次元走査される。このように関数発生器26により
偏向信号発生器22.24の偏向電圧が関数制御されて
、任意の形状にイオンビームが走査される。
In the above configuration, ions generated in the ion source 2 are extracted and accelerated by the ion extraction electrode 8, focused by each converging lens 10, 12.14, and finally electrostatically deflected by the deflector 1G. . At this time, in order to perform two-dimensional scanning with the ion beam, first a function pattern corresponding to a desired shape such as a triangle, trapezoid, or circle to be scanned is set using the function generator 26. The function generator 26 generates the set function pattern by
The X-direction control signal based on the X component is sent to the first deflection signal generator 22, and the Y-direction control signal based on the Y component is sent to the first deflection signal generator 22.
Each second deflection signal generator 244 outputs a direction control signal. The first deflection signal generator 22 changes the deflection gauntlet in response to the X-direction control signal given from the function generator 2G. The second deflection signal generator 24 is also the function generator 2.
The deflection voltage is changed in response to the Y direction control signal given from 6. Therefore, for example, when performing trapezoidal scanning, one electrode 18a in the X direction is
A deflection voltage waveform as shown in Fig. 1 is given. A deflection voltage waveform of opposite polarity is applied to the other electrode 1"8b facing this. Also, a deflection voltage waveform as shown in FIG. A deflection voltage waveform of the opposite polarity is applied to the other electrode 20b facing the ion beam.As a result, the ion beam is deflected by the deflector 16 and is squared into a trapezoidal shape as shown in FIG. In this way, the function generator 26 functions-controls the deflection voltages of the deflection signal generators 22 and 24, and the ion beam is scanned in an arbitrary shape.

なお、この実施例では静電偏向型イオン銃を備えた荷電
粒子ビームmlについて説明し゛たが、これに限定され
るものではなく、電磁偏向型のものであってもよく、ま
た、イオン銃でなく、電子銃のものにも本発明を適用す
ることができるのは勿論である。
Although this embodiment describes a charged particle beam ml equipped with an electrostatic deflection type ion gun, it is not limited to this, and an electromagnetic deflection type may also be used. Of course, the present invention can also be applied to electron guns.

(へ)効 果 以上のように本発明によれば、任意形状に荷電粒子を走
査できる。このため、特定領域のみの分析が可能となり
、力析時曲の短縮化、コンタミネーションの防止等をあ
ることができる。
(f) Effects As described above, according to the present invention, charged particles can be scanned in any shape. Therefore, it is possible to analyze only a specific area, and it is possible to shorten the curve during force analysis and prevent contamination.

【図面の簡単な説明】[Brief explanation of the drawing]

1面は本発明の一実施例を示すものて、第1図は荷電粒
子分析装置の静電偏向型イオン銃の構成図、第2図は荷
電粒子分析装置の偏向器とこの偏向器を駆動制御する走
査制御部の構成図、第3図(a)(b)は偏向器に加え
る電圧波形図、同図(C)は荷電粒子ビームの走査形状
を示すパターン図である。 16・・・・・・偏向器、22・・・・・・第1偏向信
号発生器、24・・・・・・第2偏向信号発生器、26
・・・・・・関数発生器。 出願人 株式会社島津製作所 代理人 弁理士岡田和秀
The first page shows an embodiment of the present invention; Figure 1 is a configuration diagram of an electrostatic deflection type ion gun of a charged particle analyzer, and Figure 2 is a diagram of a deflector of a charged particle analyzer and the drive of this deflector. 3(a) and 3(b) are voltage waveform diagrams applied to the deflector, and FIG. 3(C) is a pattern diagram showing the scanning shape of the charged particle beam. 16... Deflector, 22... First deflection signal generator, 24... Second deflection signal generator, 26
...Function generator. Applicant Shimadzu Corporation Representative Patent Attorney Kazuhide Okada

Claims (1)

【特許請求の範囲】[Claims] (1)荷電粒子ビームを偏向させる偏向器と、この偏向
器に偏向信号を与える偏向信号発生器とを備えるととも
に、前記偏向信号発生器には所定の開数パターンが設定
される関数発生器が接お”εされ、この関数発生器で前
記偏向信号発生器の偏向信号を関数制御して、任意形状
に荷電fact子ビー広ビームできるようにしたことを
特徴とする荷電粒子分析装置。
(1) A deflector that deflects a charged particle beam, and a deflection signal generator that provides a deflection signal to the deflector, and the deflection signal generator includes a function generator in which a predetermined numerical pattern is set. A charged particle analyzer characterized in that the deflection signal of the deflection signal generator is controlled by the function generator to generate a wide beam of charged fact particles in an arbitrary shape.
JP58248819A 1983-12-26 1983-12-26 Charged particle analyzer Pending JPS60136145A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58248819A JPS60136145A (en) 1983-12-26 1983-12-26 Charged particle analyzer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58248819A JPS60136145A (en) 1983-12-26 1983-12-26 Charged particle analyzer

Publications (1)

Publication Number Publication Date
JPS60136145A true JPS60136145A (en) 1985-07-19

Family

ID=17183878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58248819A Pending JPS60136145A (en) 1983-12-26 1983-12-26 Charged particle analyzer

Country Status (1)

Country Link
JP (1) JPS60136145A (en)

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