JPS60129141U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS60129141U JPS60129141U JP1984014854U JP1485484U JPS60129141U JP S60129141 U JPS60129141 U JP S60129141U JP 1984014854 U JP1984014854 U JP 1984014854U JP 1485484 U JP1485484 U JP 1485484U JP S60129141 U JPS60129141 U JP S60129141U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor equipment
- junction
- semiconductor device
- semiconductor substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
Claims (1)
を介して電極金属が一体に崩御された半導体装置におい
て、前記半導体基体のPN接合に近接した表面上の半田
層に金属片を介在せしめたことを特徴と、する半導体装
置。In a semiconductor device in which electrode metals are integrally disposed on both sides of a semiconductor substrate having a PN junction through solder layers, a metal piece is interposed in the solder layer on the surface of the semiconductor substrate near the PN junction. A semiconductor device that is characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1984014854U JPS60129141U (en) | 1984-02-03 | 1984-02-03 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1984014854U JPS60129141U (en) | 1984-02-03 | 1984-02-03 | semiconductor equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60129141U true JPS60129141U (en) | 1985-08-30 |
Family
ID=30500159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1984014854U Pending JPS60129141U (en) | 1984-02-03 | 1984-02-03 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60129141U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014116511A (en) * | 2012-12-11 | 2014-06-26 | Hitachi Power Semiconductor Device Ltd | Power semiconductor device, rectification device, and power unit |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4944157B1 (en) * | 1969-11-20 | 1974-11-26 | ||
JPS5755954B2 (en) * | 1978-03-16 | 1982-11-26 |
-
1984
- 1984-02-03 JP JP1984014854U patent/JPS60129141U/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4944157B1 (en) * | 1969-11-20 | 1974-11-26 | ||
JPS5755954B2 (en) * | 1978-03-16 | 1982-11-26 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014116511A (en) * | 2012-12-11 | 2014-06-26 | Hitachi Power Semiconductor Device Ltd | Power semiconductor device, rectification device, and power unit |
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