JPS60124943A - Formation of silicon oxide film - Google Patents
Formation of silicon oxide filmInfo
- Publication number
- JPS60124943A JPS60124943A JP58232755A JP23275583A JPS60124943A JP S60124943 A JPS60124943 A JP S60124943A JP 58232755 A JP58232755 A JP 58232755A JP 23275583 A JP23275583 A JP 23275583A JP S60124943 A JPS60124943 A JP S60124943A
- Authority
- JP
- Japan
- Prior art keywords
- silicon oxide
- oxide film
- film
- formation
- silicone resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 title claims description 7
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 238000000034 method Methods 0.000 claims description 11
- 229920002050 silicone resin Polymers 0.000 claims description 10
- 239000011229 interlayer Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 210000004709 eyebrow Anatomy 0.000 claims 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 238000009413 insulation Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- QABCGOSYZHCPGN-UHFFFAOYSA-N chloro(dimethyl)silicon Chemical compound C[Si](C)Cl QABCGOSYZHCPGN-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- -1 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000006884 silylation reaction Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02137—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Polymers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
イ）発明の技術分野
本発明の層間絶縁膜用の酸化珪素膜形成方法に関し、更
に詳しくは特定のシリコーン樹脂溶液を用いた、半導体
装置の層間絶縁用酸化珪素膜の形成方法に関する。Detailed Description of the Invention A) Technical Field of the Invention The present invention relates to a method for forming a silicon oxide film for an interlayer insulation film, and more specifically, a method for forming a silicon oxide film for an interlayer insulation film of a semiconductor device using a specific silicone resin solution. Regarding the forming method.
口）技術の背景
ＬＳＩの素子間分離や、 ＬＳＩ、バブルメモリ等微細
パターンを有する半導体装置の層間絶縁は、■シリコン
基板の熱酸化による酸化珪素膜、■シラン系がスを用い
た気相成長による二酸化珪素系絶縁材料、又は■ポリイ
ミド、シリコーン樹脂など有機系絶縁材料などを用いて
行なわれている。しかるに、いずれの材料を用いても微
細化、信頼性等に一長一短が存する。すなわち、ＬＳＩ
の素子間分離において、熱酸化の方法が、微細化の点か
ら限界に達しつつある。一方、層間絶縁では平坦化機能
と耐熱性と信頼性（すなわち、密着性、耐電食性および
厚膜形成性など）の全てについて満足できる材料が存し
ない。(1) Background of the technology The isolation between elements of LSI and the interlayer insulation of semiconductor devices with fine patterns such as LSI and bubble memory are achieved by: ■silicon oxide film formed by thermal oxidation of a silicon substrate, and ■vapor phase growth using silane-based gas. This is done using silicon dioxide-based insulating materials such as (2) or organic insulating materials such as polyimide and silicone resin. However, no matter which material is used, there are advantages and disadvantages in terms of miniaturization, reliability, etc. That is, LSI
In isolation between devices, thermal oxidation methods are reaching their limits in terms of miniaturization. On the other hand, for interlayer insulation, there is no material that satisfies all of the flattening function, heat resistance, and reliability (ie, adhesion, electrolytic corrosion resistance, thick film formability, etc.).
７つ 従来技術と問題点
上記月料の内、シリコーン樹脂は平坦化機能及び耐熱性
の点で優れており、かがるシリコーン樹脂としてポリノ
アルコキシシラｙ ＲＯ−Ｅ−（ＲＯ）２ｓ ｔｏ＋、
Ｒ（式中、Ｒは一価の炭化水素、例えばメチル基、エチ
ル基、又は水素である）を用い塗布し次いで熱分解し５
ｉ０２にする方法が知られている。しかるにこのポリソ
アルコキシシランを塗布後、熱分解すると、アルコキシ
基が飛散する際、体積減少に伴ない塗膜に歪とピンホー
ルを残すので、０．２〜０．５μ？ｎ以上の膜厚に塗布
した場合、塗膜にクラックが入ってし貰う。このような
塗膜をデバイスを層間絶縁膜として用いた場合、平坦化
機能と信頼性に好ましくない影響を与える。また、０．
２０μｍ以下の膜厚に塗布した場合、クラックは発生し
ないが′電食不良の原因となる。7. Prior art and problems Among the above materials, silicone resin is excellent in terms of flattening function and heat resistance, and polynoalkoxysilicone resin RO-E-(RO)2s to+,
R (wherein R is a monovalent hydrocarbon, such as methyl, ethyl, or hydrogen) and then pyrolyzed.
There is a known method to set the value to i02. However, when this polysoalkoxysilane is thermally decomposed after being applied, when the alkoxy groups scatter, it leaves distortions and pinholes in the coating film as the volume decreases, resulting in 0.2 to 0.5μ? If it is applied to a film thickness greater than n, the film will crack. When such a coating film is used as an interlayer insulating film in a device, it has an unfavorable effect on the planarization function and reliability. Also, 0.
When applied to a film thickness of 20 μm or less, no cracks will occur, but it will cause electrolytic corrosion defects.
二）発明の目的および構成
本発明はかかる従来の問題点を解消し、平坦化ｆｌ＆能
、耐熱性に加えて信頼性のある優れた絶縁膜を提供する
ことをその目的とするものでおり１半ため、次式Ｉ：
（式中、Ｒ１、Ｒ，、およびＲ３は独立に水素又はＲ１
〜４アルキルを表わす）
で表わされるシリコン樹脂の浴液を塗布し、カ［」熱処
理することを＊ａとする。2) Object and Structure of the Invention The object of the present invention is to solve such conventional problems and provide an excellent insulating film that has excellent planarization ability, heat resistance, and reliability. Therefore, the following formula I: (wherein R1, R, and R3 are independently hydrogen or R1
*a means applying a bath liquid of a silicone resin represented by ~4 alkyl) and heat-treating it.
すなわち、本発明は熱処理時に飛散する原子又は原子団
が極めて小さいシリコーン樹脂を層間絶縁膜用の材料に
用いた場合、飛散の酸の体積減少が小であるので熱処理
後、平坦化機能、耐熱性に優れた絶縁膜を得ることがで
きるとの知見のもとに完成されたものである。かかる知
見のもとに本発明においては、珪素原子に水素原子が結
合したポリシロキサン型化合物を採用したのでおる。In other words, in the present invention, when a silicone resin with very small atoms or atomic groups scattered during heat treatment is used as a material for an interlayer insulating film, the volume reduction of the scattered acid is small. It was completed based on the knowledge that it was possible to obtain an insulating film with excellent properties. Based on this knowledge, the present invention employs a polysiloxane type compound in which a hydrogen atom is bonded to a silicon atom.
本発明の特徴を更に説明するならば次の如くである。前
記式Ｉから成るシリコーン樹脂を用いて５ＩＯｘ膜を形
成すれば、熱分解時に水素は容易に分解されるので５Ｉ
Ｏｘ膜中の不純物量は少なく、ピンホールも微細であり
、かりＳｉＯの酸化による体積増加が歪を緩和し、ピン
ホールを埋めるので最終的に歪が小さくかつ緻密で純粋
なＳＩＯ（ｘ＝１〜２）膜が得られるということにある
。末端が水酸基の１つでは不安定であるが、末端をシリ
ル化すると安定であり、これによって本発明は有効なも
のとなっている。本発明において、前記式Ｉ中Ｒ１＋
Ｒ２ｒ Ｒ３が全て水素である化合物が好ましいが、そ
の一部がメチルやエチル基であっても初期の効果は達成
できる。。The features of the present invention will be further explained as follows. If a 5IOx film is formed using the silicone resin of formula I, hydrogen is easily decomposed during thermal decomposition, so 5I
The amount of impurities in the Ox film is small and the pinholes are minute, and the increase in volume due to oxidation of SiO alleviates the strain and fills the pinholes, resulting in a dense and pure SIO with small strain (x = 1 ~2) A film can be obtained. Although it is unstable when the terminal has one hydroxyl group, it becomes stable when the terminal is silylated, which makes the present invention effective. In the present invention, R1+ in the formula I
Compounds in which R2r and R3 are all hydrogen are preferred, but even if some of them are methyl or ethyl groups, the initial effect can be achieved. .
本発明で用いるシリコーン（θ（脂自体は公知である（
■１１ｄｕｓｔｒｉａｌ ａｎｄ Ｅｎｇｉｎｅｅｒ
ｉｎｇ ＣｈｅｍｉｓｔｒｙＶｏｌ ４４ ＄２ Ｐ３
２１〜（１９５２） ）。しがしががるシリコーン樹脂
を半導体装置の層間絶縁用として使用する技術について
は未だ知られていない。このようなシリコーン樹脂は粉
末であり、例えば回転塗布で基板に塗布する場合などＫ
はトルエン等の有機溶剤に溶解して塗布する。回転塗布
する場合、膜厚調整は分子量、溶剤の種類、樹脂濃度、
回転数等によって行う。本発明で用いるシリコーン樹脂
は回転塗布、スグレなどの方法によるコーティングが可
能であるので、凹凸のある基板に塗布し、その表面を平
坦化する機能を有する。従って穴あけされたシリコン基
板に塗布し、約１００℃で予備加熱後３５０℃以上で熱
処理して５ＩＯ２化し、穴部を埋め込む方式における半
導体装置の素子間分離に適している。又、微細配線を設
けた半導体装置あるいはパズルメモリなどの配線層間絶
縁材料として好まし使用できる。The silicone used in the present invention (θ (the fat itself is known (
■11 Industrial and Engineer
ing Chemistry Vol 44 $2 P3
21-(1952)). There is still no known technology for using sticky silicone resin for interlayer insulation of semiconductor devices. Such silicone resin is a powder, and when applied to a substrate by spin coating, for example, K
is applied by dissolving it in an organic solvent such as toluene. When using spin coating, the film thickness can be adjusted by adjusting the molecular weight, type of solvent, resin concentration,
This is done depending on the number of rotations, etc. Since the silicone resin used in the present invention can be coated by a method such as spin coating or smearing, it has the function of coating an uneven substrate and flattening the surface. Therefore, it is suitable for isolation between elements of a semiconductor device in which the method is applied to a silicon substrate with holes, preheated at about 100° C., and then heat-treated at 350° C. or higher to form 5IO2 and fill the holes. Furthermore, it can be preferably used as an interlayer insulation material for wiring in semiconductor devices provided with fine wiring, puzzle memories, and the like.
以下、更に本発明を実施例により説明する。The present invention will be further explained below with reference to Examples.
ホ）発明の実施例
１、実施ＦＪ１（ポリハイドロシルセスキオキサンの製
造）還流管、撹拌棒、温度計およびロートを備えた四ツ
目フラスコにトリエトキシシラン（沸点１３１〜１３２
℃）１６．４ ＆ （０，１モル）、メチルインズチル
ケトン（ＭＩＢＫ） ２００ Ｆを装入し、氷水で冷却
しつつ水６ｇを滴下した。滴下後、水浴３５℃に加熱し
９０分間攪拌を続けた。次にロートを取り、ドライアイ
スで冷却したエタノールを入れたデユワ−ビンをトラッ
プとする減圧系に接続した５ ０ ｍｍＨｇに減圧した
まま１３．５時間重合させた。e) Example 1 of the invention, implementation FJ1 (Production of polyhydrosilsesquioxane) Triethoxysilane (boiling point 131-132
℃) 16.4 & (0.1 mol), methyl induzyl ketone (MIBK) 200 F was charged, and 6 g of water was added dropwise while cooling with ice water. After the dropwise addition, the mixture was heated in a water bath at 35° C. and stirring was continued for 90 minutes. Next, the funnel was taken out, and the mixture was polymerized for 13.5 hours under reduced pressure of 50 mmHg connected to a reduced pressure system using a dewar bottle containing ethanol cooled with dry ice as a trap.
その後、リークさせ１気圧に戻した。重合液に３０ｇの
ジメチルクロルシランを加えてシリル化した。仄いて水
を５０ｇ滴下し過剰のシリル化剤を分解させ、はらに水
洗を行った後、１．５ｍｍＨρ栄件でｍ液が粘稠になる
まで減圧濃縮した。次いでアセトニトリルおよびトルエ
ンを用いて精製し、粉末状のポリハイドロシルセスキオ
キサン（分子量９５０００）６．０ｇを得た。After that, the pressure was returned to 1 atm by leaking it. 30 g of dimethylchlorosilane was added to the polymerization solution for silylation. Then, 50 g of water was added dropwise to decompose the excess silylating agent, and after thoroughly washing with water, the mixture was concentrated under reduced pressure at 1.5 mm Hp until the solution became viscous. The product was then purified using acetonitrile and toluene to obtain 6.0 g of powdered polyhydrosilsesquioxane (molecular weight 95,000).
実施例２
実施例１で得られたポリハイドロシルセスキオキサン５
ｇをトルエン９ｇに溶解し３５重量％の樹脂液を作成し
た。次にシリコン基板内にバイポーラ素子を形成し、そ
の上に１層目のアルミニウム配線を行った。アルミ配線
の厚さは０．９μｍ１最小線間隔は２μｍである。上記
樹脂液を３００Ｏｒｐｍ３０秒の条件で回転塗布１００
℃−Ｃ３０分ｍ］溶剤乾燥、および空気中４５０℃、６
０分１司の熱処理を行った。同一条件で平板上に塗布し
て？尋られる膜厚は１．０μｍであったが、上記アルミ
自己線上では０．４μｍ１スペ一ス部では１．１μｍで
あり、段差は９．２μｍであった。次に１．０８ｍのＰ
ＳＧを公知ノ方法で形成しスルーホールのＪｉ成、２Ｊ
−目のアルミ配線の形成、さらに１，３μｍのＰＳＧ層
を形成し電極取出し用窓あけを行なってｉＺイ号？−ラ
素子装置を得た。この装置について空気中５００℃１時
間の加熱試験、−６５℃と１５０℃の１０回の往復によ
る熱衝撃試験、８５℃９０ＳＲＨ下での６ｖ印加１ｏｏ
ｏ時間の試験及びこれらの試験の組み合わせ試験を行っ
た。その結果、試験装置には何らの異常や不良も観察さ
れなかった。Example 2 Polyhydrosilsesquioxane 5 obtained in Example 1
g was dissolved in 9 g of toluene to prepare a 35% by weight resin liquid. Next, a bipolar element was formed in the silicon substrate, and a first layer of aluminum wiring was formed thereon. The thickness of the aluminum wiring is 0.9 μm, and the minimum line spacing is 2 μm. Spin coat the above resin solution for 100 seconds at 300 rpm for 30 seconds.
°C-C 30 minutes m] Solvent drying and 450 °C in air, 6
Heat treatment was performed for 0 minutes and 1 hour. Apply it on a flat plate under the same conditions? The measured film thickness was 1.0 μm, but on the aluminum self-line, it was 1.1 μm in one 0.4 μm space, and the step difference was 9.2 μm. Next, 1.08m P
SG is formed by a known method to form a through hole, 2J.
- Formation of aluminum wiring, further formation of 1.3 μm PSG layer, and opening of window for electrode extraction. - An element device was obtained. Regarding this device, heating test in air at 500℃ for 1 hour, thermal shock test by reciprocating between -65℃ and 150℃ 10 times, 6V applied 1oo at 85℃ and 90SRH
o hour tests and combination tests of these tests were conducted. As a result, no abnormality or defect was observed in the test device.
尚、本例においては、４５０℃、６０分１ｔＪ１熱処理
を行ったが、３５０℃〜５００℃の加熱１品度、３０分
〜９０分の加熱時間を適宜採用できる。In this example, 1tJ1 heat treatment was performed at 450°C for 60 minutes, but heating time of 30 minutes to 90 minutes at 350°C to 500°C for 1 grade can be adopted as appropriate.
へ）発明の詳細
な説明したように、本発明は半導体装置のＩＰｒ間絶縁
用酸化珪素膜の材料ｅこ４１ツノ・イト９０シルセスキ
オキサンを用いるようにしたものである力）ら、平坦化
機能を持つ５ｔＯｘ膜のコーティングにおいて、緻密で
かつ歪の少ない信中貞性の高い絶斧東膜を得ることが可
能となると同時にＭＪＩをＪｉ＜塗布した場合でもクラ
ックの発生を伴わない効果を奏する。f) As described in detail, the present invention uses silsesquioxane as the material of the silicon oxide film for inter-IPr insulation of semiconductor devices. In the coating of the 5tOx film, which has the function of play.
特許出願人 富士通株式会社 、特許出願代理人 弁理士 青 木 朗 弁理士 西 卸 和 之 弁理士 内 １）幸 男 弁理士 山 口 昭 之patent applicant Fujitsu Limited , patent application agent Patent Attorney Akira Aoki Patent attorney Kazuyuki Nishi Patent attorney 1) Yukio Patent attorney Akira Yamaguchi
Claims (1)
〜４アルキルを表わす） で表わされるシリコン樹脂の溶液を塗布し、加熱処理す
ることを特徴とする、眉間絶縁膜用酸化珪素膜の形成方
法。 ２、前記加熱処理を３５０℃以上で行う、特許請求の範
囲第１項記載の層間絶縁膜用酸化珪素膜の形成方法。[Claims] 1. General formula: (wherein R1, R, and R3 are independently hydrogen or R1
A method for forming a silicon oxide film for an insulating film between the eyebrows, the method comprising applying a solution of a silicone resin represented by the following formula (representing ~4 alkyl) and heat-treating the solution. 2. The method for forming a silicon oxide film for an interlayer insulating film according to claim 1, wherein the heat treatment is performed at a temperature of 350° C. or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58232755A JPS60124943A (en) | 1983-12-12 | 1983-12-12 | Formation of silicon oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58232755A JPS60124943A (en) | 1983-12-12 | 1983-12-12 | Formation of silicon oxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60124943A true JPS60124943A (en) | 1985-07-04 |
Family
ID=16944245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58232755A Pending JPS60124943A (en) | 1983-12-12 | 1983-12-12 | Formation of silicon oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60124943A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6230335A (en) * | 1985-07-31 | 1987-02-09 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH01130535A (en) * | 1987-11-17 | 1989-05-23 | Tokyo Ohka Kogyo Co Ltd | Method of forming silicone film |
| EP0610899A2 (en) * | 1993-02-09 | 1994-08-17 | Dow Corning Toray Silicone Company, Limited | Methods for the formation of a silicon oxide film |
| US5370903A (en) * | 1992-12-11 | 1994-12-06 | Dow Corning Toray Silicon Co., Ltd. | Method for the formation of a silicon oxide film |
| US5372842A (en) * | 1992-12-14 | 1994-12-13 | Dow Corning Toray Silicone Co., Ltd | Method for the formation of a silicon oxide film |
| US5859162A (en) * | 1995-03-10 | 1999-01-12 | Mitsubishi Denki Kabushiki Kaisha | Silicone ladder polymer and process for producing the same |
| US6399733B1 (en) | 2000-04-04 | 2002-06-04 | Mitsubishi Denki Kabushiki Kaisha | Process for preparing a highly pure silicone ladder polymer |
| US20140154441A1 (en) * | 2011-07-29 | 2014-06-05 | SiOx ApS | Reactive Silicon Oxide Precursor Facilitated Anti-Corrosion Treatment |
| JP2016052979A (en) * | 2014-09-04 | 2016-04-14 | 国立研究開発法人産業技術総合研究所 | Method for joining ceramic member and aluminum member |
-
1983
- 1983-12-12 JP JP58232755A patent/JPS60124943A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6230335A (en) * | 1985-07-31 | 1987-02-09 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH01130535A (en) * | 1987-11-17 | 1989-05-23 | Tokyo Ohka Kogyo Co Ltd | Method of forming silicone film |
| US5370903A (en) * | 1992-12-11 | 1994-12-06 | Dow Corning Toray Silicon Co., Ltd. | Method for the formation of a silicon oxide film |
| US5372842A (en) * | 1992-12-14 | 1994-12-13 | Dow Corning Toray Silicone Co., Ltd | Method for the formation of a silicon oxide film |
| EP0610899A2 (en) * | 1993-02-09 | 1994-08-17 | Dow Corning Toray Silicone Company, Limited | Methods for the formation of a silicon oxide film |
| EP0610899A3 (en) * | 1993-02-09 | 1996-05-15 | Dow Corning Toray Silicone | Method for forming a layer of silicon oxide. |
| US5859162A (en) * | 1995-03-10 | 1999-01-12 | Mitsubishi Denki Kabushiki Kaisha | Silicone ladder polymer and process for producing the same |
| US6399733B1 (en) | 2000-04-04 | 2002-06-04 | Mitsubishi Denki Kabushiki Kaisha | Process for preparing a highly pure silicone ladder polymer |
| US20140154441A1 (en) * | 2011-07-29 | 2014-06-05 | SiOx ApS | Reactive Silicon Oxide Precursor Facilitated Anti-Corrosion Treatment |
| EP2736981A4 (en) * | 2011-07-29 | 2015-03-25 | SiOx ApS | Reactive silicon oxide precursor facilitated anti-corrosion treatment |
| JP2016052979A (en) * | 2014-09-04 | 2016-04-14 | 国立研究開発法人産業技術総合研究所 | Method for joining ceramic member and aluminum member |
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