JPS60113428A - semiconductor manufacturing equipment - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a semiconductor manufacturing apparatus, and particularly to a semiconductor manufacturing apparatus that processes a substrate by a dry process.

[Background of the invention]

Dry etching equipment, plasma CVD! In semiconductor manufacturing equipment that processes substrates by a dry process, polymers accumulate on the inner walls of the vacuum processing chamber of the semiconductor manufacturing equipment over time, and this polymer adversely affects the processing of the substrates. Therefore, in order to eliminate this negative influence, the inside of the vacuum processing chamber is cleaned periodically or at any time by interrupting substrate processing. During this cleaning process, if the substrate electrodes are electrically insulated except at the substrate mounting position, in order to prevent damage to the substrate electrodes at the substrate mounting position,
A dummy substrate is placed at the substrate placement position. In a conventional semiconductor manufacturing apparatus, a tummy substrate is placed at a substrate placement position in a cleaning process of a vacuum processing chamber in the following manner.

For example, in semiconductor manufacturing equipment in which a vacuum preparatory chamber for loading and unloading is conjugated to a vacuum processing chamber, the vacuum preparatory chamber for loading is once opened to the atmosphere and the substrates to be processed are stored in the cassette (hereinafter referred to as "cassette"). , a substrate supply cassette) is taken out of the vacuum preliminary chamber, and a cassette containing a dummy substrate (hereinafter abbreviated as a dummy substrate supply cassette) is brought in in place of it. After that, the vacuum preparatory chamber for loading is evacuated to a pressure similar to that of the vacuum processing chamber, and then the vacuum preparatory chamber and the vacuum processing chamber are communicated, and the dummy substrate is carried into the vacuum processing chamber. The substrate is placed on the substrate placement position of the substrate electrode. On the other hand, a cassette for collecting processed substrates (hereinafter referred to as a substrate collection cassette) is taken out from the vacuum preliminary chamber for unloading, and a cassette for collecting dummy substrates (hereinafter referred to as a dummy substrate collection cassette) is taken out in turn. ), and then the vacuum preliminary chamber for unloading is evacuated to a pressure comparable to that of the vacuum processing chamber.

After the cleaning process in the vacuum processing chamber is completed, the vacuum processing chamber is communicated with the vacuum preliminary chamber for unloading, and the dummy substrate placed at the substrate mounting position of the substrate electrode is removed from the vacuum processing chamber for unloading. It is carried out to the vacuum preliminary room and collected in the Gudummy substrate collection cassette.

Thereafter, the substrate supply cassette is replaced with a dummy substrate supply cassette and carried into the vacuum preparatory chamber for loading, and the processed substrate recovery cassette is replaced with a dummy substrate recovery cassette in the vacuum preparatory chamber for unloading. and then transported again. Then load.

The vacuum preliminary chamber for unloading is evacuated to a pressure comparable to that of the vacuum processing chamber, and normal substrate processing is performed again.

Note that the above operation is repeatedly performed every time the vacuum processing chamber is cleaned.

Such semiconductor manufacturing equipment has the following drawbacks.

(1) Load every time the vacuum processing chamber is cleaned.

It is necessary to repeatedly open the vacuum preliminary chamber for unloading to the atmosphere and evacuate it, and it is also necessary to replace the substrate supply cassette and dummy substrate supply cassette, and the substrate recovery cassette and dummy substrate recovery cassette. The time required for the cleaning process becomes longer, and the throughput (the number of substrates processed per unit time) decreases.

(2) Since the substrate supply cassette is taken out from the loading vacuum preliminary chamber to the atmosphere side every time the vacuum processing chamber is cleaned, dust adheres to the substrates stored in the substrate supply cassette, reducing yield.

, 3.

(3) Board supply cassette and dummy board supply cassette.

Since the substrate recovery cassette and the dummy substrate recovery cassette are replaced manually, it is not possible to automate the series of processes including substrate processing and vacuum processing chamber cleaning processing.

[Purpose of the invention]

An object of the present invention is to provide a semiconductor manufacturing apparatus that can improve throughput by shortening the time required for cleaning a vacuum processing chamber.

[Summary of the invention]

The present invention provides a vacuum processing chamber in which a vacuum preliminary chamber for loading and unloading is conjugated via a vacuum opening/closing means, and another vacuum preliminary chamber in which a cassette for supplying and recovering dummy substrates is set via a vacuum opening/closing means. The device is characterized by being provided with a dummy substrate transfer device that transfers the dummy substrate between the cassette and the substrate electrode installed in the vacuum processing chamber via a vacuum opening/closing means. This is an attempt to shorten the time required for the cleaning process.

・　4　・ [Embodiments of the invention] surface An embodiment of the present invention will be described with reference to the drawings.

△ In the drawing, the vacuum processing chamber, which has a counter electrode (not shown) and a predetermined discharge space and in which the substrate electrode 10 is housed, is divided into a vacuum preparatory chamber for loading and a vacuum preparatory chamber for unloading. 31 are respectively conjugated via vacuum opening/closing means (not shown). In the second case, a cassette dedicated to supplying substrates is set between the vacuum preparatory chambers, and the substrates are taken out from the cassette 40 and transferred from the vacuum preparatory chamber to the vacuum processing chamber via a vacuum opening/closing means. In this case, a cassette 41 dedicated to substrate recovery is set in the vacuum preparatory chamber 31, and the processed substrates placed in the substrate mounting position 11 are connected from the vacuum processing chamber (9) to the vacuum preparatory chamber via a vacuum opening/closing means. A known substrate transport device (not shown) is installed therein, which transports the substrate to the cassette 41 and then stores the substrate in the cassette 41. The vacuum processing chamber 10 includes a vacuum evacuation system [(not shown) and a processing gas supply system! (not shown) are connected to each other, and a vacuum evacuation device (not shown) is connected to each of the vacuum preparatory chambers (equipment) 31. Also,
The vacuum preliminary chamber 30.31 is provided with a vacuum atmosphere opening/closing means (not shown), and the substrate (material) outside the vacuum preliminary chamber (9) is carried into the vacuum preliminary chamber (9) via the vacuum atmosphere opening/closing means. A known substrate carrying-in device (not shown) that is later stored in the cassette 40 and a known substrate carrying-out device (not shown) that takes out the substrate 50 from the cassette 41 and carries it out of the vacuum preliminary chamber 31 via a vacuum atmosphere opening/closing means, respectively. It is provided. In addition, the size of the substrate electrode 10 is such that seven substrates can be placed simultaneously on their respective placement positions 11, and the substrate electrode 10 is placed outside the vacuum processing chamber in this case. It is rotationally driven by a provided drive device N (not shown) and is connected to a power source (not shown).

Further, the dummy substrate 51, in this case, is connected to another vacuum preliminary chamber n, in which the cassette 42 for supplying and recovering is set, between the vacuum processing chambers via a vacuum opening/closing means (not shown), in this case, the vacuum preliminary chamber. (capital), is conjugated at right angles to 31. The vacuum preliminary chamber (in which the dummy substrate 51 is removed from the cassette 42
The dummy substrate 51 is taken out from the vacuum preliminary chamber 32 and carried between the vacuum processing chambers, and then placed on the substrate placement position 11 of the substrate electrode 10, and the dummy substrate 51 placed on the substrate placement position 11 is A known dummy substrate transfer device (not shown) is provided for transporting the dummy substrate from between the vacuum processing chambers to the vacuum preparatory chamber n via the vacuum opening/closing means and then storing it in the cassette 42.

Before starting a predetermined processing operation between the vacuum processing chambers, a number of dummy substrates 51 corresponding to at least the number of substrate mounting positions of the substrate electrodes 10, in this case, seven dummy substrates 51 are stored in the cassette 42.

The method of storing the dummy board 51 in the cassette 42 is to take out the cassette 42 outside the vacuum preliminary chamber 32 and place the dummy board 51 in the cassette 42.
Cassette 4 may be stored in the vacuum preliminary chamber n.
2, the vacuum preliminary chamber I is placed in this cassette 42.
, the dummy substrate 51 may be stored from the outside via the vacuum processing chamber (a). Thereafter, the vacuum atmosphere opening/closing means of the vacuum preliminary chamber (9) is opened, and a predetermined number of substrates are supplied from the outside via the vacuum atmosphere opening/closing means to the cassette 1-40 by the substrate loading device and stored therein. Thereafter, the vacuum atmosphere opening/closing means is closed, and the vacuum preparatory chamber (equipment) is evacuated by the vacuum evacuation device to a pressure comparable to that of the vacuum processing chamber, which is evacuated to a predetermined pressure by the vacuum evacuation device. Thereafter, by opening the vacuum opening/closing means, the vacuum processing chamber and the vacuum preliminary chamber are communicated with each other, and the substrate 50 of the cassette 40 is taken out by the substrate transfer device and exits from the vacuum preliminary chamber through the vacuum opening/closing means. After being carried into the vacuum processing chamber, it is placed on the substrate placement position 11. In this case, the substrates are placed on the substrate placement position 11 by a combination of, for example, the reciprocating movement of the substrate transfer device and the rotation of the substrate electrode 10 caused by the heat of the drive device. After the substrates have been placed on the substrate placement position 11 in this way, the vacuum opening/closing means is closed and the vacuum processing chambers and the vacuum preparatory chambers are cut off. Similarly, between the vacuum processing chambers and the vacuum preliminary chamber 31
．． 32 was also quickly terminated. In this state, a processing gas is supplied between the vacuum processing chambers at a predetermined flow rate from the processing gas supply device, and this processing gas is turned into plasma between the vacuum processing chambers. On the other hand, between the substrates placed at the substrate placement position 11, the substrate electrodes 1
0 is rotated by a drive device, and during this period, the substrate (material) is subjected to a predetermined treatment with plasma. After processing of the substrate (material) is completed, the vacuum opening/closing means is opened to communicate between the vacuum processing chambers and the vacuum preliminary chamber 31, and the processed substrate placed at the substrate mounting position 11 is opened by opening the vacuum opening/closing means. The cassette 411 is carried out from between the vacuum processing chambers to the vacuum preparatory chamber 31 by a substrate transfer device, and then stored and recovered.

Such collection of processed substrates into the cassette 41 is performed by, for example, a combination of reciprocating motion of the substrate transport device and rotation of the substrate electrode 10 by a drive device. After the processed substrates 50 have been collected into the cassette 41, the vacuum opening/closing means is closed and the vacuum processing chamber and the vacuum preliminary chamber 31 are cut off.

By repeating the above-described operations, every seventh substrate 50 is taken out from the cassette, processed at the same time, and then collected into the cassette 41. During this time, when the polymer is deposited on the inner walls of the vacuum processing chambers and is about to adversely affect the processing between the substrates, the above-described operation is stopped and the cleaning processing between the vacuum processing chambers is performed as follows.

First, the vacuum preliminary chamber 32 is depressurized and evacuated to a pressure comparable to that of the vacuum processing chamber. Thereafter, by opening the vacuum opening/closing means, the vacuum processing chamber and the vacuum preliminary chamber are communicated with each other, and the dummy substrate 51 is taken out from the cassette 42 by the dummy substrate transfer device. After being carried into the vacuum processing chamber section from chamber n, it is placed on the substrate placement position 11.

The dummy substrate 51 is placed on the substrate placement positions 1N and 11 in this manner by a combination of, for example, the reciprocating movement of the dummy substrate transfer device and the rotation of the substrate electrode 10 by the drive device. In this way, the dummy substrate 5 is placed in the substrate mounting position 11.
1, the vacuum opening/closing means is closed to shut off the vacuum processing chamber and the vacuum preparatory chamber. Thereafter, the vacuum processing chamber section is subjected to cleaning processing in this state. Thereafter, the vacuum opening/closing means is opened, the vacuum processing chamber section and the vacuum preliminary chamber n are communicated, and the dummy substrate 51 placed on the substrate mounting position [11] is collected into the cassette 42 by the above-described operation and the reverse operation. By closing the opening/closing means, the entire cleaning process of the vacuum processing chamber is completed.

After completing the cleaning process of the vacuum processing chamber as described in 2.
The inter-substrate processing operations described above are resumed.

Thereafter, when the polymer is deposited again on the inner wall of the vacuum processing chamber and is about to adversely affect the processing between the substrates, the vacuum processing chamber is cleaned again by the above-described operation.

A semiconductor manufacturing apparatus such as this embodiment provides the following effects.

(1) Opening the vacuum preparatory chamber for loading and unloading to the atmosphere as in the conventional technology for each cleaning process in the vacuum processing chamber;
There is no need to repeatedly perform vacuum evacuation, and there is no need to replace the substrate supply cassette and dummy substrate supply cassette, and the substrate recovery cassette and dummy substrate recovery cassette, reducing the time required for cleaning the vacuum processing chamber and increasing throughput. You can improve.

(2) Since it is not necessary to take out the substrate to be processed from the loading vacuum preparatory chamber to the atmosphere side every time the vacuum processing chamber is cleaned, the adhesion of dust to the substrate to be processed is suppressed and the yield can be improved.

(3) A series of processes including substrate processing and vacuum processing chamber cleaning processing can be automated.

In addition, similar effects can be obtained in a semiconductor manufacturing apparatus in which a vacuum preliminary chamber for loading and unloading is conjugated to the vacuum processing chamber via a vacuum opening/closing means.

Further, even if the vacuum processing chamber is of a type in which substrates are processed one by one, there is no particular problem. Further, another vacuum preliminary chamber may be coupled to the vacuum processing chamber so that a cassette for supplying dummy substrates and a cassette for recovering dummy substrates can be set separately.

〔Effect of the invention〕

As explained above, the present invention provides another vacuum preparatory chamber in which a cassette for supplying and recovering dummy substrates is set in a vacuum processing chamber in which a vacuum preparatory chamber for loading and unloading is conjugated via a vacuum opening/closing means. By providing a dummy substrate transfer device that conjugates the dummy substrate through the vacuum opening/closing means and conveys the dummy substrate between the cassette and the substrate electrode installed in the vacuum processing chamber via the vacuum chamber opening/closing means, Since the time required for cleaning the vacuum processing chamber can be shortened, throughput can be improved.

[Brief explanation of the drawing]

The drawing is a plan view of a vacuum processing chamber section showing an embodiment of the semiconductor manufacturing apparatus according to the present invention. 10...Substrate electrode, processing...Vacuum processing chamber, chrysanthemum, 31...Vacuum preliminary chamber, vane...Other vacuum preliminary chamber, 42...Four cassettes, 51... Dummy board agent Patent attorney Akio Takahashi

Claims (1)

[Claims] 1. It has a vacuum processing chamber in which a vacuum preliminary chamber for loading and unloading is conjugated via a vacuum opening/closing means, and the substrate placed on the substrate electrode installed in the vacuum processing chamber is subjected to a dry process. In the processing apparatus, another vacuum preliminary chamber in which cassettes for the same month of supply of dummy substrates are set is connected to the vacuum processing chamber through a vacuum opening/closing means, and the cassettes and W distribution boards are connected through a vacuum opening/closing means. 1. A semiconductor manufacturing apparatus comprising a dummy substrate transfer device for transferring a dummy substrate to and from an electrode.