JPS5988395A - Apparatus for growing compound semiconductor crystal in vapor phase - Google Patents

Abstract

PURPOSE:To grow a desired compound semiconductor crystal on a substrate in a vapor phase by feeding plural kinds of materials for growing a crystal and an atmospheric gas to a position just before the substrate in a growing furnace through separate ducts so as to inhibit the materials from reacting with each other until they reach the substrate. CONSTITUTION:A pipe 28 only for feeding an alkyl compound of a III group element, a pipe 29 only for feeding the hydride of a V group element and a pipe 27 only for feeding an atmospheric gas are separately installed in the section 20 for feeding materials for growing a crystal in a vapor phase growing apparatus. Those materials for growing a crystal are separately fed to a position just before a substrate crystal 13 in the growing furnace section 10 so as to inhibit the materials from reacting with each other until they reach the crystal 13. Using the apparatus, a desired compound semiconductor crystal can be grown on the substrate crystal 13 in a vapor phase.

Description

[Detailed Description of the Invention] This invention is applicable to GaAe, GaAl! As, Engineering nP,
(2) It relates to a vapor phase growth apparatus for compound semiconductor crystals composed of two or more types of elements such as nGaAgP.

In recent years, GaAJ GaAIAe, engineering nP, engineering nGaAs
As a method for growing an nr-v group compound semiconductor crystal such as P by a vapor phase method, Ga(OH3)3. AI! (OH
3)3. A vapor phase growth method using alkylated products of Group I elements such as In(02Hs)a and hydrides of Group V elements such as AsH', PH'3, etc. as materials for crystal growth (
(hereinafter abbreviated as MO-OVD method) is attracting attention.

FIG. 1 shows a conceptual block diagram of a conventionally used horizontal MO-OVD device. In the figure, αO is the growth furnace section, and 01
03 is a growth furnace, (A) is a graphite susceptor, and 03 is a coil for heating the substrate crystal and α→ graphite susceptor (2) by high-frequency force. Further, the fins are material supply parts for crystal growth, and PH3+As13 is a gas at room temperature, and each is usually a high-pressure gas cylinder (21a).

(21b).

On the other hand, Ga(013)3 is a liquid at room temperature, so it is stored in containers (22a) and (22b), respectively, and is supplied after being vaporized by a carrier gas such as H2. .

In addition, in order to control the vapor pressure at this time, these containers (22a) and (22b) are each placed in a constant temperature bath r23a).
, (23b). (C) is a carrier gas supply pipe.

I vaporized by these PH3, AsH3 and H2
n(02H5'> 3゜G3(CH3)3) After being mixed together with H2 as an ambient gas in the crystal growth material supply section (E), it is passed through the material gas supply pipe (A) and sent to the growth furnace section 0. (Supplied to ll.

Note that C) A is an exhaust pipe.

However, in the conventional MO-OVD device described above,
PAT3 and A nHa and: tn(a2n5)3
Since the crystal growth materials of Ga(CH3)a and Ga(CH3)a are mixed with each other in the crystal growth material supply section (e), these gases are mixed into the substrate crystal 0 to be crystallized in the growth furnace θυ.
However, it was not easy to grow a desired crystal on the substrate crystal α frame.

This invention was made in order to overcome the above-mentioned drawbacks of conventional MO-OVD equipment, and by supplying the crystal growth materials independently from each other up to just before the substrate crystal in the growth furnace, these crystal growth materials can be The purpose of this invention is to prevent the crystals from reacting with each other before reaching the substrate crystal, and thus to enable crystals of desired quality to be grown on the substrate crystal.

FIG. 2 shows a conceptual configuration diagram of an MO-OVD device according to an embodiment of the present invention. The same reference numerals as in the conventional example indicate equivalent parts, and the explanation will be omitted. In the figure, @ is a supply pipe exclusively for atmospheric gas, (c) is a supply pipe exclusively for alkylates of group II elements, and (a) is a supply pipe exclusively for hydrides of group II elements. As shown in Figure 2, in the crystal growth material supply section, a supply pipe exclusively for alkylates of group I elements and a supply pipe exclusively for hydrides of group V elements are provided separately. The crystal growth materials can be supplied independently of each other up to just before the substrate crystal a3, so that these crystal growth materials do not react with each other before reaching the substrate crystal α, and therefore the desired crystal cannot be formed. can be grown on the substrate crystal 03.

FIG. 3 is a conceptual diagram showing another embodiment of the present invention. Here, the supply pipe exclusively for the alkylate of the group (Ⅰ) element and the supply pipe exclusively for the hydride of the group V element are arranged so as to constitute a double pipe. In this case, the alkylate of the group III element and the hydride of the group III element mix uniformly with each other in the cross section perpendicular to the flow direction in the growth furnace αυ, so that the crystals grown on the substrate crystal 03 are more We can expect it to become more homogeneous.

In each of the above embodiments, a configuration was shown in which two types of alkylated products of group nI elements and two types of hydrides of group type elements were supplied at the same time. This is based on the assumption that GaA3
Alternatively, in the case of compound semiconductor crystals such as nP, each high pressure gas cylinder (21a), (21
b) and valves are provided at the outlets of each of the vessels (22a) and (22b), and the feed material gas may be appropriately selected.

In addition, instead of PH3 and A sHs, (OH3) 3F
+ (OHa)Alkylated products such as 3As are sometimes used, but in this case, the same effect can be obtained by supplying the alkylated products of these group Ⅰ elements independently of the alkylated products of group Ⅰ elements. It's not even true.

In the above explanation, the case of ■-■ group compound semiconductor crystals such as GaAe and nP was shown, but Zn (02
T(5)21Cd(OH3) 2. Hg(OH3)2
0dTe, Hg0(1,T
The present invention can also be applied to the case of vapor phase growth of II-Vl group compound semiconductor crystals such as e.

As explained above, in the compound semiconductor crystal growth apparatus according to the present invention, the material gases for crystal growth are fed to the growth furnace through separate feed pipes and mixed just before the substrate in the growth furnace. High quality grown crystals can be obtained efficiently.

[Brief explanation of drawings]

Figure 1 shows an example of a conventional horizontal MO-OVD device.
FIG. 2 is a conceptual diagram showing an embodiment of the present invention, and FIG. 5 is a conceptual diagram showing an embodiment of a song according to the invention. In the figure, 01 is the growth furnace part, (11) is the growth furnace, (c) is the substrate, (2)) is the crystal growth material supply part, (to) is the supply pipe exclusively for alkylated group 1 elements, ( 2) is a supply pipe exclusively for hydrides of group V elements. Note that the same reference numerals in the figures indicate the same or corresponding parts. Applicant: Makoto Ishizaka, Director, Agency of Industrial Science and Technology - Figure 2, Figure 13, 11tL lli

Claims (1)

[Claims] (1) A compound semiconductor crystal consisting of multiple types of elements is grown with multiple types of gases containing each of the above elements. 2. The compound semiconductor crystal vapor phase growth apparatus according to claim 1, wherein each of the gases is removed from the substrate in the growth furnace when the substrate is grown on the substrate.