JPH10223540A - Organic metal chemical vapor deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent time variation of the feed rate of an org. metal material gas and remains of a solid org. metal material. SOLUTION: This apparatus comprises a solid org. metal material feed tank 100 having a carrier gas feed pipe 70 and a solid org. metal material gas discharge pipe 71 and a gas-ventilated solid org. metal housing chamber 90 disposed in the feed tank 100, so that a carrier gas fed from the feed pipe 70 passes through a solid org. metal 31 in the housing chamber 90 and is discharged from the discharge pipe 71.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal organic chemical vapor deposition apparatus (MOCVD apparatus) having an organic metal source gas supply source.

[0002]

2. Description of the Related Art For example, an LED (Light Emitting Diod)
e), HEMT (High Electron Mobility Transistor)
In the formation of compound semiconductors in various semiconductor device apparatuses such as semiconductor devices, for example, in epitaxial growth, metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy in which supply of raw materials can be controlled accurately and reproducibly. Method (MBE) is suitable. Further, these methods are characterized by crystal growth in a non-parallel state, and can obtain a mixed crystal of a multicomponent compound semiconductor which is difficult to perform by liquid phase epitaxy (LPE). In particular, in the MOCVD apparatus, the scale can be easily increased, and the compound semiconductor layer can be grown efficiently and easily.

FIG. 2 shows a schematic configuration diagram of a general MOCVD apparatus. For example, GaAs, AlGaAs, AlGa
The epitaxy of a compound semiconductor layer such as AsP or GaInP by MOCVD is performed using trimethyl gallium (TMGa), trimethyl aluminum (TM
Al), trimethylindium (TMIn), and other organometallic source gas supply sources 60 (FIG. 2 shows only one organometallic source gas supply source) for obtaining an organometallic source gas, and are group V. As the raw material supply source 32, a hydride such as arsine (AsH ₃ ) or phosphine (PH ₃ ) is provided.

In an organic metal raw material gas supply source 60, T
When a solid material such as MIn is used, its source is:
As shown in FIG. 3, the above-described TMI
The hydrogen carrier shown in FIG. 2 which contains a solid organometallic raw material 31 made of spherical particles having a diameter of about 5 mm to 10 mm and having a high purity by a purifying device (not shown). The flow rate of the carrier gas from the gas supply source 12 is controlled through a mass flow controller (MFC) 17 at a predetermined flow rate from a carrier gas supply pipe 51, and the carrier gas and the organometallic raw material gas vaporized thereby are discharged. It is taken out from the organometallic raw material gas take-out pipe 52 and led to the reaction chamber 13 shown in FIG.

The organometallic raw material gas thus sent into the reaction chamber 13 is sent by a heating means 14 such as a high-frequency coil to a vapor deposition substrate 16 on a susceptor 15 maintained at a constant temperature, where it is heated. Disassemble the substrate 1
The target compound semiconductor layer is epitaxially grown on 6.

On the other hand, when the epitaxial growth is stopped, the supply of the carrier gas to the organic metal source gas supply source 60, that is, the supply of the organic metal source gas to the reaction chamber 13 may be stopped. With such an apparatus, a compound semiconductor, in this example, a III-V compound semiconductor, is epitaxially grown.

[0007]

However, in the organometallic raw material gas supply source 60 shown in FIG.
A carrier gas supply pipe 51 is provided above the solid organometallic raw material 31, from which a carrier gas is fed, passes through the solid organometallic raw material particles, and the vaporized solid organometallic raw material is taken out from the organometallic raw material gas extraction pipe 52. Due to the configuration, in the organic metal raw material gas supply source 60, unevenness occurs in how the solid organic metal raw material 31 hits the carrier gas. Then, the sublimation of the solid organometallic raw material 31 is remarkably performed in some places, or the unreacted solid organometallic raw material 31 remains, so that the supply of the organometallic raw material gas changes with time.

That is, the organic metal raw material gas extraction pipe 5
The solid organic metal material 31 is vaporized from the vicinity of the solid organic metal material 31, and as time passes, the solid organic metal material 31 is preferentially depleted from the solid organic metal material 31 to which the carrier gas has been applied. There is a possibility that the content decreases, and the solid organometallic raw material 31 located at a position distant from the organometallic raw material gas take-out pipe 52 remains without being vaporized.

Therefore, the present inventor has conducted intensive studies and as a result, as a result of the study, it has been found that the supply of the organometallic raw material gas as described above can be prevented from changing over time and the organic metal raw material can be prevented from remaining. A phase growth apparatus has been provided.

[0010]

The metalorganic vapor phase epitaxy apparatus of the present invention is provided with a solid metalorganic material supply tank having a carrier gas supply pipe and a solid metalorganic material gas outlet pipe. In the tank, there is a solid organometallic arrangement chamber having air permeability, and the carrier gas supplied from the carrier gas supply pipe is passed through the solid organometallic arranged in the solid organometallic arrangement chamber, and the solid organometallic raw material is supplied. A gas is obtained, and the solid organic metal source gas is led out from a solid organic metal source gas outlet pipe.

According to the metal organic chemical vapor deposition apparatus of the present invention,
The carrier gas can be evenly supplied to the entire solid organic metal raw material, preventing the supply amount of the organic metal raw material gas vaporized from the solid organic metal raw material from changing with time and preventing the solid organic metal raw material from remaining. can do.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a metal organic chemical vapor deposition apparatus (MOCVD apparatus) according to the present invention will be described below. Hereinafter, one embodiment will be described. Also in this example, FIG.
The configuration is the same as described above.

For example, epitaxy of a compound semiconductor layer such as GaInP or GaInAsP by MOCVD is as follows.
Trimethyl gallium (TM
Ga), an organic metal source gas supply source 60 (only one supply source 60 is shown in FIG. 2 as a representative) for obtaining an organic metal source gas such as trimethylindium (TMIn) is provided, and a group V source material is provided. As the supply source 32, a hydride such as arsine (AsH ₃ ) or phosphine (PH ₃ ) is provided.

In the present invention, among the organic metal raw material gas supply sources 60, a solid organic metal raw material is particularly used. For example, as a supply source 60 of trimethylindium (TMIn), a carrier gas supply pipe 70 as shown in FIG.
A solid organic metal source supply tank 100 having a solid organic metal source gas outlet pipe 71 is provided. In the solid organometallic raw material supply tank 100, a first region 81 and a second region 82 are provided.
Are arranged below and above the solid-organic metal arrangement chamber 90 so as to sandwich the solid-organic metal arrangement chamber 90.
The boundary surface between the region 81 and the second region 82 is partitioned by partitions 40a and 40b, and the partition has a gas-permeable structure through which gas can pass. For example, the partition may have a mesh structure. it can.

The carrier gas supply pipe 70 is connected to the first region 8
The carrier gas, which is communicated with substantially the center of the bottom surface of 1 and supplied thereto, is diffused and blows into the solid organic metal disposing chamber 90 almost uniformly over the entire area.

The second region 82 is provided with the solid organic metal
It is a region for accumulating fine particles and fog of the solid organometallic raw material 31 blown up from zero.

Above the second area 82, the second area 8
2, a solid organic metal raw material gas outlet pipe 71 is provided outside the solid organic metal raw material supply tank 100 and serves to send out the organic metal raw material gas together with the carrier gas.

A solid organometallic raw material 31 is accommodated in the solid organometallic arrangement chamber 90, and a hydrogen carrier gas supply source 1 purified by a purifier (not shown) is supplied to the solid organometallic raw material 31.
2 from the mass flow controller (M
FC) 17, the flow rate is controlled, and the gas is blown from the carrier gas supply pipe 70 through the first region 81.

The solid organometallic raw material 31 is, for example, 5 m in diameter with trimethylindium (TMIn) adhered to the surface.
When a carrier gas is blown into the solid organometallic raw material 31, trimethylindium (TM)
In) evaporates (sublimates).

An organic metal raw material gas together with a carrier gas,
For example, a gas of trimethylindium is sent from the solid organometallic arrangement chamber 90 to the second region 82, and finally from the solid organometallic raw material gas outlet pipe 71, the reaction chamber 13 of FIG.
It is led to.

The organometallic raw material gas thus sent into the reaction chamber 13 is heated by a heating means 14 such as a high-frequency coil or the like to a substrate 16 on a susceptor 15 maintained at a constant temperature.
Where thermal decomposition occurs to perform epitaxial growth of the target compound semiconductor on the substrate 16.

In carrying out MOCVD by the apparatus of the present invention, first, in FIG.
From 0, a carrier gas is supplied to the first region 81. When the carrier gas diffuses into the first region 81 and is sufficiently filled, the carrier gas becomes solid organic metal material 31.
Is supplied to the solid organic metal disposing chamber 90 in which is disposed, and the vaporized (sublimated) organic metal raw material is sent out from the surface of the solid organic metal raw material 31 to the second region 82 together with the carrier gas. At this time, by providing the first region 81, the carrier gas can be diffused once in this region 81, and can be uniformly supplied to the entire solid organic metal 31 in the solid organic metal disposing chamber 90. it can. As a result, it is possible to prevent unevenness in consumption of the solid organometallic raw material, and to stably supply the organometallic raw material gas.

Further, fine particles (particles) or fog (mist) may be generated on the solid organic metal 31 in the solid organic metal disposition chamber 90 due to a substance separated from the spherical particle surface. Solid organic metal raw material supply tank 10
According to 0, when the fine particles and fog of the solid organometallic raw material reach the second region 82 together with the carrier gas, the flow velocity of the gas is reduced, so that the fine particles and fog sink and accumulate on the partition 40 by their own weight. Accordingly, it is possible to prevent the fine particles and mist of the solid organometallic raw material from being transported outside the solid organometallic raw material supply tank 100 together with the carrier gas.

The organic metal raw material gas vaporized (sublimated) from the surface of the solid organic metal raw material 31 is sent out of the solid organic metal raw material supply tank 100 through the solid organic metal raw material gas outlet pipe 71 together with the carrier gas. Is sent to the reaction chamber 13 for performing the target MOCVD shown in FIG.
A vapor phase growth is performed on the substrate 16.

As described above, the organometallic vapor phase epitaxy apparatus of the present invention comprises a solid organic metal source supply tank 1 having a carrier gas supply pipe 70 and a solid organic metal source gas outlet pipe 71.
In the solid organic metal raw material supply tank 100, a solid organic metal placement chamber 90 having air permeability is provided, and the carrier gas supplied from the carrier gas supply pipe 70 is
The gas is passed through the solid organometallic raw material 31 arranged in the solid organometallic arrangement chamber 90 to obtain a solid organometallic raw material gas, and the solid organometallic raw material gas is led out from the solid organometallic raw material gas outlet pipe 71. It was done.

According to the metal organic chemical vapor deposition apparatus of the present invention,
Since the carrier gas can be uniformly supplied to the entire solid organic metal raw material 31, the sublimation of the solid organic metal raw material 31 can be performed uniformly, thereby preventing the solid organic metal raw material 31 from remaining. However, it is possible to effectively prevent the supply of the organometallic raw material gas from changing over time.

According to the metalorganic vapor phase epitaxy apparatus of the present invention, the second region 82 is provided above the solid metalorganic disposition chamber 90 in the solid metalorganic material supply tank 100, so that the carrier is provided. It is possible to trap fine particles and mist of the solid organometallic raw material that has reached this region together with the gas, and to prevent the fine particles and mist of the solid organometallic raw material from being transported to the outside of the solid organometallic raw material supply tank 100 together with the carrier gas. Can be.

The present invention is not limited to the above-described embodiment, but can be applied to a metal organic chemical vapor deposition apparatus used for metal organic chemical vapor deposition using various solid organic metal raw materials.

[0029]

According to the organometallic vapor phase epitaxy apparatus of the present invention, the carrier gas can be uniformly supplied to the solid organometallic raw material. The supply of the organometallic raw material gas was prevented from changing over time, and the solid organometallic raw material was prevented from remaining.

According to the organometallic vapor phase epitaxy apparatus of the present invention, the second region 82 is provided above the solid organometallic chamber 90 in the solid organometallic material supply tank 100, so that the carrier is provided. The fine particles and fog of the solid organometallic raw material 31 that have reached this region together with the gas can be trapped, and the fine particles and fog of the solid organometallic raw material 31 are prevented from being transported to the outside of the solid organometallic raw material supply tank 100 together with the carrier gas. We were able to.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of an organic metal source gas supply source of an organic metal vapor phase epitaxy apparatus of the present invention.

FIG. 2 is a schematic configuration diagram of a general MOCVD apparatus.

FIG. 3 is a schematic configuration diagram of an organic metal source gas supply source of the organic metal vapor phase epitaxy apparatus of the present invention.

[Explanation of symbols]

11 closed chamber, 12 carrier gas supply source, 13 reaction chamber, 14 heating means, 15 susceptor, 16 substrate, 1
7 mass flow controller, 31 solid organometallic raw material, 32 group V raw material supply source, 40a, 40b partition,
51, 70 carrier gas supply pipe, 52 organometallic raw material gas take-out pipe, 60 organometallic raw material gas supply source, 71
Solid organometallic raw material gas outlet pipe, 81 first area, 8
2 second area, 90 solid organometallic chamber, 100
Solid organic metal raw material supply tank

Claims (4)

[Claims] 1. A solid organometallic raw material supply tank having a carrier gas supply pipe and a solid organic metal raw material gas outlet pipe is provided, and a gas-permeable solid organic metal placement chamber is provided in the solid organic metal raw material supply tank. Passing the carrier gas supplied from the carrier gas supply pipe through the solid organic metal disposed in the solid organic metal disposition chamber to obtain a solid organic metal raw material gas, An organometallic vapor phase epitaxy apparatus wherein a gas is led out from the solid organometallic raw material gas outlet pipe. 2. The method according to claim 1, wherein the carrier gas supplied from the carrier gas supply pipe is supplied to the solid organic metal disposed in the solid organic metal disposition chamber so as to pass over substantially the entire area. The metalorganic vapor phase epitaxy apparatus according to claim 1. 3. The solid organic metal raw material supply tank is provided below the solid organic metal raw material supply tank, and the solid organic metal raw material gas outlet pipe is provided from the solid organic metal raw material supply chamber in the solid organic metal raw material supply tank. The metalorganic vapor phase epitaxy apparatus according to claim 1, wherein the metalorganic vapor phase epitaxy apparatus is disposed above. 4. The organometallic vapor phase epitaxy according to claim 1, wherein the solid organometallic raw material is trimethylindium.