JPS5986269A - Method for manufacturing photoelectric conversion device - Google Patents

Abstract

PURPOSE:To improve the manufacturing yield and to improve the reliability of a photoelectric converter by removing a shorted or leaked portion or region by means of laser trimming. CONSTITUTION:A semiconductor 1 has a first electrode 5, a non-single crystal semiconductor 4, to which hydrogen or halogen element is added and which has at least a P-I-N junction, and the second electrode 3, and the two electrodes are connected to a detector 6 through a terminal for detecting the improper portion. Improper portions 18, 19 are scanned, for example, by a visible light such as He-Ne laser or Ar laser 8 to detect the output, a trimming laser 12 is emitted from a YAG laser 9 through a half mirror 10 and a mirror 11 to remove the improper portions. A nitrided silicon insulator 21 is coated to form a passivation film, polyimide is coated to improve the moisture resistance, and a leakage current between the P and the N in a trimming unit is prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a photoelectric conversion device having at least one p-N junction, by removing a short-circuit or leakage point or region by laser trimming. The purpose of the present invention is to provide such laser trimming inside the PVC, and to prevent leakage from occurring again through the semiconductor surface caused by this trimming. The purpose of the present invention is to form a silicon nitride film, a silicon oxide film, or an organic resin on the top surface of these semiconductors to form an insulating film on the surface of the semiconductor. (hereinafter simply referred to as a defective area), the output is detected by irradiation with visible light as a PVO,
Furthermore, a microcomputer is used to apply a trimming laser (for example, a YAG laser) to the area where the output decreases, and irradiates it with a circular nozzle L of 20 to 100 d', generally 40 to 60 μφ, to remove the top electrode or its The purpose is to eliminate the presence of short circuits or leaks between the upper and lower second and first electrodes by vaporizing and removing the lower semiconductor.

Conventional photoelectric conversion devices have an intrinsic efficiency area of 0.1 to 5.
cm', so not much progress has been made in the manufacturing yield.

However, the inventor has determined that one of the pvo's (Nel is 20
If you enlarge it to ``X40cm' or 20X60cm'',
There are 4 or more small pinholes in this area, with a thick constant value, and the special K FF (fill factor) is from 0.6 to 0.6.
I noticed that τ went from 0.73 to 0.2-0.4. As a result of examining this PVO, it was found that the upper and lower electrodes were electrically short-circuited to each other due to the adhesion of dirt or foreign matter such as dust and protrusions. In addition, if there are such defective parts, the characteristics will deteriorate as described above, making it impossible to obtain the specified characteristics as a PVO panel, and furthermore, in the case of panels of 20 cm or more as described above, the manufacturing yield will decrease by 20 cm. ~40% only,
The production line, which must have 90 inches or more, is not fulfilled at all. As a result, the cost of the product increases and reliability decreases.

In order to eliminate such defects, the present invention irradiates and detects the defective location with visible light, and simultaneously irradiates the defective location with pulsed light 7 to detect the electrode, the electrode and the semiconductor, or the upper and lower electrodes and the semiconductor between them. By performing laser trimming that instantly erases the data, the purpose is to improve the manufacturing yield and further improve the reliability.

The embodiment will be described below with reference to the drawing (/i).

FIG. 1 shows an outline of the laser trimming system used in the present invention.

Semiconductor being laser trimmed in Figure 1 (1)
are a substrate (2), a first electrode (5), a non-single-crystal semiconductor (3) doped with hydrogen or a halogen element having at least one P-N junction (3), for example, P-type S i x Of-11
(0': xZl)-1 type 5i-IJ type (μCf31)
It is made of a good semiconductor and has a thickness of 0.4 to 0.6 μm. Furthermore, a second electrode (4) is provided on this upper surface, and a terminal for detecting a defective part is connected from the two electrodes to a detector (4).
6) K has been introduced.

This signal is applied to a YAG laser (output of 1~IOW, e.g. 5W) and trimmed through a mirror (10) through a mirror (10). remove.

For detecting defective locations, visible light of 30 to 100 μΦ, such as a He-Ne laser or an Ar laser (8), is irradiated.

In this way, laser trimming of the defective parts was carried out. FIG. 2 shows the process of FIG. 1 in a vertical sectional view.

In drawing (A), the substrate (2) is made of translucent glass, and defective areas (1υ) are detected by scanning the laser beam with 0μ. The first electrode (5), the non-single crystal semiconductor (4), the second electrode (for example, the semiconductor ± is τN1 and the KAIO multilayer film is 0.5 to 1.5
p) (3) is provided.

Drawing (A) is upside down in correspondence with FIG. 1. The first and second electrodes (5), (3) due to the foreign substance α→
is passing leakage current. Also, α→ is in a shorted state.

Scanning such defective parts with visible light and detecting the appearance of the defect,
We have detected a location where the output (voltage or current value of 0.5 to 0.6 V has deteriorated by 30 to 60% or more compared to the predetermined value.
), and the semiconductor and upper electrode were deposited and removed as shown in FIG. 2(B)K.

Thus, the semiconductor (4) has its side surface exposed.

Thereafter, the entire surface of the PVC (1) shown in FIG. 2(B) was coated with a silicon nitride insulator Q to a thickness of 500-200 OA to form a passivation film. This was formed using a plasma vapor phase method at a temperature of 200 to 350 degrees Celsius (typically 280 degrees Celsius). Furthermore, a polyimide resin was coated on the top surface to a thickness of 1 to 3 μm to improve moisture resistance and 14 between PN in this trimming part
(Jll, 11 leakage current was prevented.

In Figure 2, the laser beam is directed upward and downward from the bottom side of α→
7! -'-1' I went 1. However, this semiconductor is a stainless steel substrate, and this substrate is used as a first electrode, a non-single crystal semiconductor is formed on its upper surface, and a second electrode is formed on its upper surface.
When the electrode was provided, the trimming laser beam from the direction α→ shown in FIG. 2(A) was preferable.

FIG. 3 shows the area to be removed at the trimming section.

FIG. 3(A) shows that the semiconductor (4) is connected to the second electrode (
3) is selectively removed. For this reason pv
A defective part of a(1) (regarding a2, only the second electrode (3) is selectively removed even if a part of the semiconductor (4) is exposed.Furthermore, a passivation film is provided on the upper surface of this). , which prevents the occurrence of leaks and deterioration of reliability.0 Figure 3 (B) shows that when the first and second electrodes (3) and (5) are in shock with each other, the second electrode at the short-circuit point The electrode and semiconductor (4) were removed by laser trimming.

In FIG. 3, the eleventh and second electrodes (5) and (3) of the semiconductor (1) and all of the semiconductor (4) between them are removed. In this case, if you look at the top surface of the laser beam, you will see a 7w44q circle (A) (20~
80μ, generally 50μ). Of course, if there are two or more trimming spots, the shape may become complex, such as an ellipse or a gourd shape.

As described above, in the PVO of the present invention, at least the electrode on the side opposite to the substrate is removed in spots inside the PVO, and defective points such as leaks and shorts between the two opposing electrodes are removed. Conventionally, the production yield was only 30 to 40%, but by correcting these defects, the production yield was increased to 80 or more.

Claims (1)

[Claims] 1. A first electrode made of a transparent conductive film on a conductive substrate or a transparent substrate, and at least A photovoltaic force generated by irradiating the photoelectric conversion device with the visible light at a locally short-circuited or leakage point or region between a non-single crystal semiconductor having one PIN junction and a second electrode. by detecting that relatively less photovoltaic force is generated at the short circuit or leak point or region compared to the short circuit or leak point or region;
A method for manufacturing a photoelectric conversion device, comprising removing an electrode, a semiconductor under the electrode, a semiconductor under the electrode, and a first electrode.