JPS5994884A - Manufacture of photoelectric conversion device - Google Patents

Abstract

PURPOSE:To improve the manufacturing yield and contrive to improve the reliability by performing laser trimming wherein the electrode at a defect part, the electrode and a semiconductor, or the upper and lower electrodes and the semiconductor therebetween are erased instantaneously by irradiating the part with a visible light. CONSTITUTION:A foreign matter 16 causes the first and second electrodes 3 and 5 to flow a leakage current and becomes a scattering center. Such the defect part is scanned with the viasible light, thus detecting the output thereof, and then a part whose output deteriorates by 30-60% as compared with a fixed value is detected. Further, the semiconductor and the upper electrode are evaporated and removed by irradiating this place with a YAG laser spot. Thus, the semiconductor 4 is exposed at the side surface or the surface 20. Thereafter, this PVC1 is coated with an Si nitride insulator 21 over the entire surface thereof, resulting in the formation of a passivation film. Moreover the upper surface thereof is coated with polyimide resin, thereby improving the moisture resistance and preventing the leakage current on the I-layer side surface between the P-N junction at this trimming part.

Description

DETAILED DESCRIPTION OF THE INVENTION An object of the present invention is to improve the efficiency of a photoelectric conversion device (referred to as PVC!) by eliminating at least one P-N junction.

The present invention provides such laser trimming inside the PVO, and in order to prevent leakage from occurring again through the semiconductor surface caused by this trimming, a silicon nitride film, a silicon oxide film, or a silicon oxide film thereof is applied to the semiconductor surface. The organic resin on the top surface (which is intended to form a passivation film from C) is irradiated with visible light, such as a He-Nθ laser beam, for detection. Taking advantage of the fact that it is easily scattered by foreign objects, this scattered light is guided to a photosensor and stored by multiple optical fiber detectors attached in the diagonal direction of the irradiated light, and one side detects the scattered signal from the optical fiber. Turn off the 7 otosensor (equipped with a filter for infrared light with a wavelength of 0.8μ or more), and then give a signal to the trimming laser (for example, a YAG laser) to generate a signal of 20 to 100 I, generally 40 to 60
By irradiating the second electrode on the upper surface or part of the semiconductor below the second electrode and the second electrode on the upper surface by vaporizing and removing the second electrode on the upper surface, 1st
The purpose is to eliminate the presence of shorts or leaks between the electrodes.

Conventional photoelectric conversion devices have an intrinsic efficiency area of 0.1 to 5.
%/cm", but not much progress had been made in the manufacturing yield.

However, the inventor has determined that one panel of PVO with 20'
If you enlarge it to “X40cm” or 20X60CmL,
If there are 4 or more small pinholes and 1 or more large pinholes in this area, the open circuit voltage of PvC will decrease in that area, and the K or short circuit current will have a predetermined value due to IJ-. , especially when the FF (fill factor) is generally 0.6 to 0.
．． I noticed that it went from 73 to 0.2-0.4. As a result of examining such PVC, it was found that garbage,
Due to the adhesion of dirt or foreign matter such as protrusions, an electrical show occurs between the upper and lower electrodes, making it impossible to obtain the desired characteristics as a P■0 panel, and furthermore, the above-mentioned 20c
For panels larger than m''', the manufacturing yield is 2.
There are only 0 to 40 units, which does not meet the production line requirement of 90 units or more. As a result, by performing laser trimming that instantly erases the cost structure of the product or the upper and lower electrodes and the semiconductor between them, it is possible to improve the manufacturing yield and further improve the reliability. The following embodiments will be described with reference to the drawings.

FIG. 1 shows an outline of the laser trimming system used in the present invention.

Semiconductor being laser trimmed in Figure 1 (1)
are a substrate (2), a first electrode (3), a non-single crystal semiconductor (4) doped with hydrogen or a halogen element and having at least one P-N junction (4), for example, a P-type 5iXO+-x (0<X
< 1) It is a semiconductor consisting of -1 type 5i-N type (μ (!-8i)) and has a thickness of 0.4 to 0.6 μ.Furthermore, a second electrode (5), that is, Ag (500~20
00λ) +A1 (0,5μ) or ITO (700
~1400λ) +Ag (500~2000^) 1N
i (1000-4000 large). In this film preparation, when the He-Ne laser beam (8) is irradiated, if a foreign substance with a size of 0, 1 to 10 μm is attached to the photoelectric conversion device during or before the process, the semiconductor layer or electrode will be damaged in this part. It will no longer form. In other words, the concave portion becomes F(#,').Also, if these foreign substances remain, they create a convex portion, which becomes a center of scattering for visible light, and this scattered light is detected by a photosensor. If there is a signal, the first microcomputer α1 turns off the photosensor (7), and after controlling the second microcomputer α4, the signal is given to the YAG laser (9)K. Apply a trimming light (output of 1 to IOW, e.g. 5W) and pass it through the half mirror (10) to the trimming laser 0. FIG. 2 shows the process of FIG. 1 in a longitudinal sectional view.

Ta. PVC! In (1), a transparent first electrode (3), a non-single-crystal semiconductor (4), and a second electrode (for example, KOTF on the semiconductor and KAg on top of it) are formed on the substrate (2). A multilayer film of 0.5 to 1.5 μm of KNii or AI+Ni may be formed thereon for contact with the external electrode (5).

It is the center of rebellion.

Scanning such defective parts with visible light and detecting the output,
Output (voltage or current value of 0.5~0.6)
The semiconductor and the upper electrode were evaporated and removed as shown in FIG. 2(B)K.

Thus, one side or one surface (a) of the semiconductor (4) is exposed.

Thereafter, the entire surface of the PVO (1) shown in FIG. 2(B) was coated with a silicon nitride insulator Q]) to a thickness of 500 to 2000 H to form passivation II1. This was formed by a plasma vapor phase method at temperatures between 200 and 350°C, typically 280°C. Furthermore, coat the top surface with polyimide resin to a thickness of 1 to 3 μm,
Improved moisture resistance and 1 between PN at this trimmed part
Prevents leakage current on the side surfaces of the layer.

In FIG. 2, the laser beam was directed upwards.

The present invention is applied when this semiconductor is formed on a stainless steel substrate, this substrate is used as a first electrode, a non-single crystal semiconductor is formed on its upper surface, and a second electrode is further provided on its upper surface. be able to.

FIG. 3 shows the area to be removed at the trimming section.

FIG. 3(A) shows that the semiconductor (4) is connected to the second electrode (
5), only the second electrode (5) is selectively removed. Furthermore, a passivation film Q) is provided on the upper surface to prevent leakage and decrease in reliability.0 Figure 3 (B) shows that the first and second electrodes (3) and (5) are shorted to each other. At that time, the second electrode and semiconductor (4) at the short-circuit tube are removed by laser trimming, and the second electrode (3) (5) and all of the semiconductor (4) between them are removed. There is. In this case, if you look at the top surface of the laser beam, you will see a roughly circular shape (A) (20~
80μ9 (generally 50p").Of course, if there are two or more trimming spots, the shape will become complex, resulting in an ellipse, gourd shape, etc. Needless to say.

As described above, in the PVC of the present invention, inside the PVC, at least the substrate and the conventional three
The production yield was only 0 to 40 units, but by correcting this defect, the production yield was increased to 80 units or more.

As a result, when trying to make a board for a photoelectric conversion device of 40cm x 120cm according to the NBDO standard, that is, 2° x 40cm
When trying to put it into practical use by combining 6 panels of 20cm x 60cm or 4 panels of 20x60cm, we were able to more than double the yield of each panel, and the manufacturing price of this board was reduced to ~5.
00 p'l/W, and the conversion efficiency has increased from 10 to 1% x = 4% to 10 to 4%.
%X=6%, and the improvement in efficiency was also extremely excellent.

[Brief explanation of drawings]

FIG. 1 schematically shows a laser trimming device of the present invention. FIG. 2 shows a laser-trimmed photoelectric conversion device of the present invention. FIG. 3 shows a trimmed vertical sectional view of the present invention. Patent applicant (8) (C) 1-≦U co. /2 +-1 ′(A) ≧ CB) cc) 28th CD)

Claims (1)

[Claims] 1. A first electrode made of a transparent conductive film on a conductive substrate or a transparent substrate, which can be used with a laser trimming device that can coaxially irradiate visible light and pulsed trimming light. a non-single-crystal semiconductor layer having at least one P-N junction on the electrode; and a conductive second potential on the semiconductor layer. The determined short circuit is determined by detecting, by means of an optical sensor, that a local short circuit or a leakage point or region or area between the first and second electrodes is relatively large. Or leak Y again. is the second electrode of the region or the electrode and the semiconductor under the electrode,
A method for manufacturing a photoelectric conversion device, characterized in that trimming is performed by removing the electrode, a semiconductor under the electrode, and a first electrode.