JPS5957433A - X-ray mask and its manufacture - Google Patents
X-ray mask and its manufactureInfo
- Publication number
- JPS5957433A JPS5957433A JP57168187A JP16818782A JPS5957433A JP S5957433 A JPS5957433 A JP S5957433A JP 57168187 A JP57168187 A JP 57168187A JP 16818782 A JP16818782 A JP 16818782A JP S5957433 A JPS5957433 A JP S5957433A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- pattern
- absorber
- ray mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000006096 absorbing agent Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 11
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000004544 sputter deposition Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 20
- 238000000992 sputter etching Methods 0.000 claims description 15
- 229920006254 polymer film Polymers 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims 1
- 239000002120 nanofilm Substances 0.000 claims 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
- 238000007738 vacuum evaporation Methods 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract description 2
- 238000010884 ion-beam technique Methods 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000007733 ion plating Methods 0.000 abstract 1
- 238000005546 reactive sputtering Methods 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 21
- 238000010586 diagram Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 235000021395 porridge Nutrition 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000123069 Ocyurus chrysurus Species 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、半導体集積回路製造のための微細、＋タン転
写技術であるＸ線無光技術のうち、＾コントラスト・高
傾斜角・高精度とサブミクロンの・９ノを有するＸ線マ
スクおよびその製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention is a non-photographic X-ray technology that is a fine and tan transfer technology for manufacturing semiconductor integrated circuits. The present invention relates to an X-ray mask having an X-ray mask and a method for manufacturing the same.
周知のとおり、Ｘ線露光は波長が４〜ＩＯＸの軟Ｘ線を
線源として用い、サブミクロンの微細ノくタンを転写す
る技術である。Ｘ線マスクは、軟Ｘ線を吸収する吸収体
バタンとそれを支えるＸ線マスク基板から成る。As is well known, X-ray exposure is a technique that uses soft X-rays with a wavelength of 4 to IOX as a radiation source to transfer fine particles of submicron size. An X-ray mask consists of an absorber batten that absorbs soft X-rays and an X-ray mask substrate that supports it.
吸収体バタンの相質については、軟Ｘ線を良く吸収する
Ａｕが広汎に利用されてきた。吸収体にＡｕヲ用いる場
合、マスクコントラストとして１０ｄＢを得るには、Ａ
ｔ−ＫｔＸ＠ （８，３４＾）に対して、Ａｕの膜厚ｄ
＝０．５２μｍいまだ、Ｓｔ−にα線（７，１３人）に
対してはｄ≧０．６８μｍの厚さが必要となる。ノ（り
７幅が０５μｍの場合には、アスペクト比が１以上とな
る。一般に、Ａｕ吸収体バタンの形成には、Ｔ１１Ｔａ
＋ Ｃｒ ＋ Ｍｏ等の金属マスクを用いて、Ａｒ等
の不活性ガスのイオンでエツチングするイオンエツチン
グ法が採用されている。この場合には、エツチングされ
たＡｕ粒子がマスク側壁等に再付着することやＴｉ ＋
Ｔａ等のマスクのエツチングによる後退が大きいこと
などのために第１図に示すようにＡｕ吸収体２の断面の
傾斜角は７５°程度になる。このため、イオンエツチン
グ法によるバタン形成法では、サブミクロンＡｕ吸収体
の形成は困難であった。Regarding the phase quality of the absorber baton, Au, which absorbs soft X-rays well, has been widely used. When using Au as the absorber, to obtain a mask contrast of 10 dB, A
For t-KtX@(8,34^), the Au film thickness d
= 0.52 μm However, for St- and α rays (7, 13 people), a thickness of d≧0.68 μm is required. When the groove width is 05 μm, the aspect ratio is 1 or more. Generally, T11Ta is used to form the Au absorber baton.
An ion etching method is employed in which etching is performed using ions of an inert gas such as Ar using a metal mask such as + Cr + Mo. In this case, the etched Au particles may re-adhere to the mask side wall, etc., and the Ti +
Due to the large recession caused by the etching of the Ta mask, etc., the inclination angle of the cross section of the Au absorber 2 is approximately 75° as shown in FIG. For this reason, it has been difficult to form a submicron Au absorber using the batten formation method using the ion etching method.
本発明は、Ｘ線マスク基板上にＲｅ膜を形成し、レジス
ト、５ｉ０２膜、耐ドライエツチ性の高い高分子膜等を
微細バタン形成のマスクとし、ＣＢｒＦ３ガスを用いる
反応性スパッタエツチングでＲｅ吸収体を形成するＸｌ
ｌ１！マスクの製造方法と、マスク基板上にＲｅ吸収体
、 ５ｉＯｚ／Ｒｅ吸収体または高分子／Ｒｅ吸収体が
あることを特徴とし、製造工程が少なく蓋産性の良い徽
細制楕度のＸ線マスクを提供することを目的とする。The present invention involves forming a Re film on an X-ray mask substrate, using a resist, a 5i02 film, a polymer film with high dry etching resistance, etc. as a mask for forming fine battens, and using reactive sputter etching using CBrF3 gas to form a Re absorber. Xl forming
l1! A method for manufacturing a mask, and an X-ray with a narrow ellipse that is characterized by having a Re absorber, a 5iOz/Re absorber, or a polymer/Re absorber on a mask substrate, and which requires fewer manufacturing steps and has good lid productivity. The purpose is to provide masks.
以下本発明の詳細な説明する。The present invention will be explained in detail below.
第２図は本発明の製造工程図の１例であって、ｌはマス
ク基板、２ａはＲｅ吸収体となるＲｅ膜、５はウェハ、
６はレジスト膜である。FIG. 2 is an example of a manufacturing process diagram of the present invention, where l is a mask substrate, 2a is a Re film serving as a Re absorber, 5 is a wafer,
6 is a resist film.
具体的には、１ず、Ｓｉウェノ・５土にＸ線マスク基板
１を形成し、その上に吸収体となるＲｅ膜２ａを蒸着・
スパッタ・イオンブレーティング法のいずれかの方法で
、８０００Ｘ程度の厚さに形成する（］）。Specifically, first, an X-ray mask substrate 1 is formed on Si wafer and a Re film 2a serving as an absorber is deposited on it.
It is formed to a thickness of about 8000× by either sputtering or ion blating (]).
次に、このＲｅ膜２ａ８上にレジスト６をスピンコート
シ（２）、紫外線露光・電子線露光・イオンビーム露光
等で微細パタンを形成する（３）。続いて、このレジス
トの微細バタン６をマスクに、ＣＢｒＦ３ガスを用いる
反応性スパッタエツチングで吸収体となるＲｅ膜２ａを
エツチングし、Ｒｅ吸収体バタンを形成する（４）。最
後に、Ｓｉウェノ・５を所望の部分だけエツチングして
Ｘ線マスクとする（５）。Next, a resist 6 is spin-coated on this Re film 2a8 (2), and a fine pattern is formed by ultraviolet exposure, electron beam exposure, ion beam exposure, etc. (3). Subsequently, using the resist fine bumps 6 as a mask, the Re film 2a serving as an absorber is etched by reactive sputter etching using CBrF3 gas to form a Re absorber bump (4). Finally, a desired portion of the Si wafer 5 is etched to form an X-ray mask (5).
上記のＣＢｒＦ３を用いるエツチング工程において、エ
ツチングマスクとしてレジストバタンを用いたが第３図
に示すように、５ｉ０２膜４ａをまずレジストパタン６
を用いてＣ２Ｆ６ ＋ Ｃ４Ｆ８ ＊ ＣＦ４ ＋Ｈ２
等のガスで平行平板形エツチング装置等により反応性ス
パッタエツチングしく４）（５）、この５ｉ０２膜４ａ
の微細パタンをマスクに上記と同様の方法でＲｅ吸収体
２ａを形成することも可能である。In the above etching process using CBrF3, a resist pattern was used as an etching mask, but as shown in FIG.
using C2F6 + C4F8 * CF4 +H2
This 5i02 film 4a is etched by reactive sputter etching using a parallel plate type etching device using a gas such as 4) (5).
It is also possible to form the Re absorber 2a in the same manner as above using the fine pattern as a mask.
また、マスクのポジ・ネガ反転を行なうためには、第４
図に示すように、レジストバタン６上にＴ ｉ＋ Ｃｒ
７等の金槙膜を蒸着し、リフトオフを行ない、Ｔｉ膜
等の金属バタン７を形成しく５）、この金属パタンをマ
スクに０２ガスを用いる反応性スハンタエッチングによ
り、耐ドライエ、チ性に優れた高分子膜４ｂのバタンを
形成する（６）。この高分子膜バタン４ｂをエツチング
マスクに、第２図で示したと同様にＣＢｒＦ３ガスを用
いる反応性スバッタエソチノグでＲｅ吸収体２ａを形成
する（７）。この方法では、第２図で示す工程で得られ
るマスク吸収体バタンとポジ・ネガ反転したＸ線マスク
が得られる。In addition, in order to perform positive/negative inversion of the mask, the fourth
As shown in the figure, T i + Cr is applied on the resist button 6.
A metal pattern 7 such as a Ti film is formed by evaporating a gold film such as No. 7, lift-off, etc. 5), and using this metal pattern as a mask, reactive schanter etching is performed using 02 gas to make it resistant to dry etching and oxidation. A baton of an excellent polymer film 4b is formed (6). Using this polymer film batten 4b as an etching mask, the Re absorber 2a is formed using a reactive spatter etching process using CBrF3 gas in the same manner as shown in FIG. 2 (7). In this method, an X-ray mask is obtained which is the positive/negative inversion of the mask absorber drum obtained in the step shown in FIG.
以上述べたように、本発明のマ、スク形成工程では、膜
形成後の主要工程にすべて反応性スパッタエツチングを
用いているため、従来のＡｕ膜のイオンエツチング法に
比べ、エツチング選択比が太き〈とれること、マスクの
後退によるバタン寸法のずれが小さいこと、被エツチン
グ拐が揮発性ガスの形で排気されて除去されるので、再
刊着が少ないことなどの点で従来のイオンエツチング法
と異なり、微細バタン形成が容易に行なえる。このため
、茜アスペクト比を有するザブミクロン吸収体バタンか
、寸法精朋良くかつ垂直なバタン側壁をもつ形状で形成
できる利点がある。As mentioned above, in the mask forming process of the present invention, reactive sputter etching is used in all the main steps after film formation, so the etching selectivity is higher than that of the conventional ion etching method for Au films. It is superior to the conventional ion etching method in that it can be easily etched, the deviation in batten dimensions due to mask retraction is small, and etched particles are removed by exhausting in the form of volatile gas, so there is less reprinting. In contrast, fine batten formation can be easily performed. Therefore, there is an advantage that the Zabumicron absorber batten having a madder aspect ratio can be formed with a shape having precise dimensions and vertical batten side walls.
さらに、第１図のイオンエツチングによるＡｕ吸収体の
場合に、マスク基板との利殖性を確保するため、下地膜
３を必要とした。この下地膜３がアライメントマークと
して使用されてきたが、非常に薄いため膜質にばらつき
を生じ易く、マークエツジの品質低下を招き、自動アラ
イメントを行なう場合のミスアライメントの原因となる
等問題となっていた。しかし、本方法の場合、付着性確
保のための下地膜３を必要とせず、Ｒｅのみで良いため
、品質が安定しており、自動アライメントが容易に行な
える。Furthermore, in the case of the Au absorber produced by ion etching as shown in FIG. 1, a base film 3 was required to ensure propagation with the mask substrate. This base film 3 has been used as an alignment mark, but because it is very thin, it tends to vary in film quality, leading to a decline in the quality of the mark edge and causing misalignment when performing automatic alignment. . However, in the case of this method, the base film 3 for ensuring adhesion is not required, and only Re is required, so the quality is stable and automatic alignment can be easily performed.
本発明のマスク形成工程はドライ化されており、耐薬訂
性′Ｖｃ劣る高分子マスク基板等にも容易に適用できる
。The mask forming process of the present invention is dry and can be easily applied to polymer mask substrates having poor chemical resistance 'Vc.
第５図の１．２．３にＭｏ−ＬαＩＩＭ（５，４ｔ＾）
＋Ｓｌ−にα線げ、１３Ｘ） 、 ｈｔ−にα線（８３
４＾）を用いた場合のＲｅ吸収体のマスクコントラス）
（ａ） ヲ、Ａｕ ｅ酸体のマスクコノトラスト（ｂ
）と比較して示す。マスクコントラスト：１０ｄＢを得
るためには、いずれの場合もＲｅ膜厚を０．８μｍ程度
にすれば十分であることがわかる。また、第３図と第４
図で示した５ｉ０２／Ｒｅ吸収体と高分子膜／１Ｅｔｅ
吸収体の２層構造吸収体では、Ｒｅ膜で発生したオージ
ェ電子・光電子等が、５ＩＯ２膜または高分子膜で吸収
される効果があるため、実効的にマスクコントラストは
さらに向上するという利点がある。さらに、Ｒｅ吸収体
を用いることにより、Ａｕ吸収体に比べＸ線マスクを低
価格化できる。Mo-LαIIM (5,4t^) at 1.2.3 in Figure 5
α-rays are applied to +Sl-, 13X), α-rays are applied to ht- (83
Mask contrast of Re absorber when using 4^))
(a) wo, Au e acid mask conotrast (b
). It can be seen that in order to obtain a mask contrast of 10 dB, it is sufficient to set the Re film thickness to about 0.8 μm in both cases. Also, Figures 3 and 4
5i02/Re absorber and polymer membrane/1Ete shown in the diagram
The two-layer structure absorber has the advantage that Auger electrons, photoelectrons, etc. generated in the Re film are absorbed by the 5IO2 film or polymer film, which effectively further improves the mask contrast. . Furthermore, by using the Re absorber, the cost of the X-ray mask can be made lower than that of the Au absorber.
以上説明したように、本発明は、Ｒｅ吸収体を用イルコ
トニより、反応性スパッタエツチングが利用できること
から、微細パタ７が寸法精度良く、垂直なバタン側壁を
もつ形状に形成できる利点がある。１だ、工程がドライ
化しているため、マスク基板に耐薬品性の弱い畠分イ膜
が使用できることや欠陥高置の低減化が期待できる利点
がある。As explained above, the present invention has the advantage that the fine pattern 7 can be formed in a shape with high dimensional accuracy and vertical batten side walls because reactive sputter etching can be used instead of using a Re absorber. 1. Since the process is dry, it has the advantage of being able to use Hatakebun's film, which has weak chemical resistance, on the mask substrate and reducing the number of high-position defects.
さ・ちに、従来のＡｕ吸収体と異なり、付着性確保のだ
めの薄い下地膜を必要としないため、アライメントマー
２品質が向上するという利点がある。吸収体拐料にＲ６
を用いることによ’Ｉ 、Ａｕ吸収体に比べ低価格でで
きる利点がある。また、５ｊ０２／Ｒｅ吸収体と高分子
膜／Ｒｅ吸収体から成るＸ線マスクでは、Ｒｅから発生
するオージェ電子・光電子等をＳｉ ０２膜・高分子膜
で吸収するため、実効的にマスクコントラストはさらに
向上するという利点がある。Furthermore, unlike conventional Au absorbers, there is no need for a thin base film to ensure adhesion, so there is an advantage that the quality of the alignment marker 2 is improved. R6 for absorbent material
The use of 'I' has the advantage that it can be made at a lower cost than the Au absorber. In addition, in an X-ray mask consisting of a 5j02/Re absorber and a polymer film/Re absorber, Auger electrons, photoelectrons, etc. generated from Re are absorbed by the Si02 film/polymer film, so the mask contrast is effectively reduced. There is an advantage of further improvement.
第１図は従来のイオンエツチング法で形成したＡｕ吸収
体を有するＸ線マスクの断面図、第２図は本発明の製作
工程図、第３図は中間層に５ｉＯｚ膜を用いる場合の本
発明の製作工程図、第４図はＴ１等の金稙膜のリフトオ
フ法を用いてポジ・ネガ反転した場合の製作工程図、第
５−１図はＭｏ−Ｌα線（ｓ、４ｘｉ）での本発明とＡ
ｕ吸収体を用いた時のマスクコ／トラストの比較を示す
特性図、第５−２図はＳｉ−にα線（７，１３Ｘ）での
本発明とＡｕ吸収体を用いた時のマスクコントラスト比
較を示す特性図、第５−３図はＡＡ−にα線（８３４人
）での本発明とＡｕ吸収体を用いた時のマスクコントラ
スト比較を示す特性図である。
１・・・マスク基板、 ２・・・Ａｕ吸収体、２ａ・
・・Ｒｅ吸収体、 ３・・・Ａｕ吸収体の付着性向上
のだめの下地膜、 ４・・・イオンエツチング用マス
ク、４ａ・・・ＳｉＯ□膜、４ｂ・・・耐ドライエツチ
性の高い高分子膜、 ５・・・ウェハ、 ６・・・
レジス）Ｉｌｌ、７・・・Ｔ１等の金檎膜、 ａ・・
・Ｒｅ吸収体、 ｂ・・・Ａｌｌ吸収体。
特許出願人 日本電信電話公社
代理人 白水常雄
外１名
粥 １ 図
躬 ２ 又
暦３図
粥 ４ 目
扇５−１ 図 崩５−２図
膜 厚（、ＬＪｍ）Figure 1 is a cross-sectional view of an X-ray mask having an Au absorber formed by a conventional ion etching method, Figure 2 is a manufacturing process diagram of the present invention, and Figure 3 is a diagram of the present invention when a 5iOz film is used in the intermediate layer. Figure 4 is a manufacturing process diagram for positive/negative reversal using the lift-off method for a gold film such as T1, and Figure 5-1 is a book using Mo-Lα radiation (s, 4xi). Invention and A
A characteristic diagram showing a comparison of mask contrast/trust when using a u absorber, and Figure 5-2 shows a comparison of mask contrast when using the present invention and an Au absorber using α rays (7,13X) for Si-. FIG. 5-3 is a characteristic diagram showing a comparison of mask contrast when the present invention and an Au absorber are used in AA- with alpha rays (834 people). 1...Mask substrate, 2...Au absorber, 2a.
...Re absorber, 3... Base film for improving adhesion of Au absorber, 4... Mask for ion etching, 4a... SiO□ film, 4b... Highly dry etch resistant polymer Film, 5... Wafer, 6...
Regis) Ill, 7... Gold film such as T1, a...
・Re absorber, b...All absorber. Patent applicant: Nippon Telegraph and Telephone Public Corporation agent Tsuneo Shiramizu and one other person porridge 1 illustration 2 mata calendar 3 illustration porridge 4 eye fan 5-1 illustration 5-2 illustration membrane thickness (, LJm)
Claims (5)
上にＲｅ吸収体パタンか形成されていることを特徴とす
るＸ線マスク。(1) An XIf# exposure mask characterized in that a Re absorber pattern is formed on an X-ray mask substrate.
高分子膜があり、５ｉ０２膜または高分子膜とＲｅ吸収
体パタンの２層構造から成ることを特徴とする特許請求
の範囲第１項記載のＸ線マスク。(2) A 5i02 film or a polymer film is provided on the absorber pattern of the Re film, and it has a two-layer structure of the 5i02 film or polymer film and the Re absorber pattern. X-ray mask as described.
ブレーティング法等の膜形成法により■ζｅ膜を形成し
、前記Ｒｅ膜上にレジストで微細パタンを形成し、この
レジストパタンをマスクとしてＣＢｒＦ３ガスによる反
応性スパッタエツチングでＲｅ吸収体パタンを形成する
ことを特徴とするＸ線マスクの製造方法。(3) Form a ζe film on the X-ray mask substrate by a film forming method such as vacuum evaporation, sputtering, or ion blating, form a fine pattern with resist on the Re film, and use this resist pattern as a mask. A method for manufacturing an X-ray mask, characterized in that a Re absorber pattern is formed by reactive sputter etching using CBrF3 gas.
によす５ｉ０２膜を堆積し、この５ｉ０２膜をレジスト
パタンをマスクに平行平板形エツチング装置にフレオン
系ガスを導入し、５ｉ０２膜の微細パタンを形成し、つ
ぎにこの５１０２バタンをマスクトシてＲｅをＣＢｒＦ
ａガスによる反応性スパッタエツチングし、Ｒｅの吸収
体パタンを形成することを特徴とする特許請求のｌｌｌ
１λ囲第３項記載のＸ線マスクの製造方法。(4) A 5i02 film is deposited on the Re film by sputtering/plasma CVD, etc., and a Freon gas is introduced into a parallel plate etching device using the resist pattern as a mask to form a fine pattern of the 5i02 film. Next, mask this 5102 button and convert Re to CBrF.
Ill of a patent characterized in that an absorber pattern of Re is formed by reactive sputter etching using a gas.
1. A method for manufacturing an X-ray mask according to item 3.
膜をスピンコードしその烏分子膜上に微細なレジストパ
タンを形成し、このレジストパタン上にＴｉ 、 Ｃｒ
等を蒸着し、さらにリフトオンすることによりＴｉ膜等
から成る金属パタンを形成し、つぎに、とのＴｉ等の金
属パタンをマスクに０２ガスによる反応性スパッタエツ
チングし上記の耐ドライエツチ性に優れた高分子膜のパ
タンを形成し、つづいてこの＾分子膜バタンをマスクに
ＲｅをＣＢｒＦ３ガスによる反応性スパッタエツチング
し前記Ｒｅの吸収体パタンを形成することを特徴とする
特許請求の範囲第３項記載のＸ線マスクの製造方法。(5) A polymer film with excellent dry etch resistance is spin-coded on the Re film, a fine resist pattern is formed on the polymer film, and Ti, Cr are formed on this resist pattern.
A metal pattern consisting of a Ti film, etc. is formed by vapor-depositing and further lift-on, and then reactive sputter etching is performed with 02 gas using the Ti, etc. metal pattern as a mask to obtain the above-mentioned excellent dry etch resistance. Claim 3, characterized in that a polymer film pattern is formed, and then Re is reactive sputter etched using CBrF3 gas using this molecular film pattern as a mask to form the Re absorber pattern. A method of manufacturing the X-ray mask described above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57168187A JPS5957433A (en) | 1982-09-27 | 1982-09-27 | X-ray mask and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57168187A JPS5957433A (en) | 1982-09-27 | 1982-09-27 | X-ray mask and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5957433A true JPS5957433A (en) | 1984-04-03 |
| JPH0115136B2 JPH0115136B2 (en) | 1989-03-15 |
Family
ID=15863391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57168187A Granted JPS5957433A (en) | 1982-09-27 | 1982-09-27 | X-ray mask and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5957433A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5279069U (en) * | 1975-12-09 | 1977-06-13 | ||
| JPS52139375A (en) * | 1976-05-18 | 1977-11-21 | Toshiba Corp | Mask for x-ray exposure |
| JPS5347663A (en) * | 1976-10-12 | 1978-04-28 | Mitsubishi Electric Corp | Hall indicator system for elevator |
| JPS5616137A (en) * | 1979-07-17 | 1981-02-16 | Mitsubishi Electric Corp | Transfer mask for x-ray exposure |
-
1982
- 1982-09-27 JP JP57168187A patent/JPS5957433A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5279069U (en) * | 1975-12-09 | 1977-06-13 | ||
| JPS52139375A (en) * | 1976-05-18 | 1977-11-21 | Toshiba Corp | Mask for x-ray exposure |
| JPS5347663A (en) * | 1976-10-12 | 1978-04-28 | Mitsubishi Electric Corp | Hall indicator system for elevator |
| JPS5616137A (en) * | 1979-07-17 | 1981-02-16 | Mitsubishi Electric Corp | Transfer mask for x-ray exposure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0115136B2 (en) | 1989-03-15 |
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