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JPS5924555B2 - Hikariketsugohandoutaisouchinojitsusohouhou - Google Patents

Hikariketsugohandoutaisouchinojitsusohouhou

Info

Publication number
JPS5924555B2
JPS5924555B2 JP50151815A JP15181575A JPS5924555B2 JP S5924555 B2 JPS5924555 B2 JP S5924555B2 JP 50151815 A JP50151815 A JP 50151815A JP 15181575 A JP15181575 A JP 15181575A JP S5924555 B2 JPS5924555 B2 JP S5924555B2
Authority
JP
Japan
Prior art keywords
light
emitting element
receiving element
substrate
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50151815A
Other languages
Japanese (ja)
Other versions
JPS5275994A (en
Inventor
正昭 草野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50151815A priority Critical patent/JPS5924555B2/en
Publication of JPS5275994A publication Critical patent/JPS5275994A/en
Publication of JPS5924555B2 publication Critical patent/JPS5924555B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Led Device Packages (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Description

【発明の詳細な説明】 c明の利用分野〕 本発明は、光結合半導体装置に関するものである。[Detailed description of the invention] Fields of use of C light] The present invention relates to an optically coupled semiconductor device.

。 明の背景〕従来、発光素子と受光素子との実装方法には
多くの問題があり、各種の実装方法が試みられて来た。
. BACKGROUND OF THE INVENTION Conventionally, there have been many problems in mounting methods for light-emitting elements and light-receiving elements, and various mounting methods have been attempted.

なかでも発光素子と受光素子とを効率良く光結合させる
必要から、両者の間隔の設定は最大の問題の一つである
。代表的な方法は、例えば特公昭46−11137号公
報に見られるように発光素子と受光素子との間にガラス
のような透明絶縁物を挾んだり、透明な樹脂を充填する
などの方法があるが、組立操作が複雑で原価が高くなつ
たり、発光素子と受光素子との間の隙間のため、光結合
の効率が十分でないなどの欠点があつた。
Among these, setting the distance between the light emitting element and the light receiving element is one of the biggest problems since it is necessary to optically couple the light emitting element and the light receiving element efficiently. Typical methods include interposing a transparent insulator such as glass between the light emitting element and the light receiving element, or filling the space with transparent resin, as shown in Japanese Patent Publication No. 46-11137. However, it has drawbacks such as complicated assembly operations, high cost, and insufficient optical coupling efficiency due to the gap between the light emitting element and the light receiving element.

c明の目的〕 本発明の目的は、発光素子と受光素子との光結合の効率
を上げ、かつ組立が容易な光結合半導体装置を提供する
ことにある。
OBJECTS OF THE INVENTION It is an object of the present invention to provide an optically coupled semiconductor device that increases the efficiency of optical coupling between a light emitting element and a light receiving element and is easy to assemble.

〔発明の概要〕[Summary of the invention]

本発明は、発光素子と受光素子の大きさを異ならしめて
、ともに電極に半田ボールを使つたフェースダウンボン
ディング法を用い、セラミック基板に小さい方の素子を
収納する大きさを持つ収納穴を設け、小さい方の素子を
収納穴に収容するとともに、他方の素子を上記収納穴内
の前記素子を被うように基板上に設置し、画素子をフェ
ースダウンボンディングにより基板に接続するように構
成したことを特徴とする。
The present invention makes the light emitting element and the light receiving element different in size, uses a face-down bonding method using solder balls for the electrodes, and provides a storage hole in the ceramic substrate with a size that accommodates the smaller element. The smaller element is housed in the housing hole, and the other element is placed on the substrate so as to cover the element in the housing hole, and the pixel element is connected to the substrate by face-down bonding. Features.

o明の実施伊旧 以下本発明に係る光結合半導体装置について、その一実
施例を説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the optically coupled semiconductor device according to the present invention will be described below.

第1図はボンディング前、第2図はボンディング完了後
の状態を示す。
FIG. 1 shows the state before bonding, and FIG. 2 shows the state after bonding is completed.

第1図において1は多層セラミック基板で、第1のセラ
ミックシートIAと第2のセラミックシートIBから成
る。2Aは第1の配線導体、2Bは第2の配線導体、3
A並びに3Bはガラスダム、4A、4Bはボンディング
パッド、5は第2のセラミックシートIBに穿つた収納
穴であり、以下に述べる素子6、1のうち、小さい方の
素子(本例の場合発光素子6)を収納できる大きさを持
つている。
In FIG. 1, numeral 1 denotes a multilayer ceramic substrate, which is composed of a first ceramic sheet IA and a second ceramic sheet IB. 2A is the first wiring conductor, 2B is the second wiring conductor, 3
A and 3B are glass dams, 4A and 4B are bonding pads, 5 is a storage hole drilled in the second ceramic sheet IB, and the smaller of the elements 6 and 1 described below (in this example, the light emitting element) 6) It is large enough to store.

6は発光素子、1は受光素子で、共にボール状の半田電
極8及び9を形成してある。
6 is a light emitting element, 1 is a light receiving element, and ball-shaped solder electrodes 8 and 9 are formed on both of them.

発光素子6は、ポンチインタパッド4Aの上に半田電極
8を接触させて収納穴5に収容する。
The light emitting element 6 is housed in the housing hole 5 with the solder electrode 8 in contact with the punch interpad 4A.

受光素子7は、発光素子6を上から被うようにしてボン
デイングパツド4Bの上に半田電極9を位置合せして載
せる。画素子共通常小さい圧力で半田電極とボンデイン
グパツドが仮づけされる。
The light receiving element 7 is placed on the bonding pad 4B with the solder electrode 9 aligned so as to cover the light emitting element 6 from above. For both pixel elements, the solder electrode and bonding pad are usually temporarily attached with a small pressure.

10はこの仮づけ後の発光素子と受光素子との隙間を示
す。
10 indicates the gap between the light emitting element and the light receiving element after this temporary attachment.

第2図は加熱して画素子6,7の接続が完了した状態を
示し、11及び12は完了した接続部である。しかして
第1図に示す隙間10は半田溶融後符号13で示すよう
に無くなり、画素子は密着する。この密着作用は接続部
の半田量、即ち素子の半田量とボンディングパツドの半
田量の合計及び素子側の電極寸法(通常は円の径)、基
板側の寸法、素子重量などを発光素子6側と受光素子7
側とで変化させることにより行われる。要するに発光素
子単独での半田溶融時の高さh1 (第1図)より受光
素子の半田溶融時の高さ変化H2を、隙間10を打消す
ように大きく設定することによつて画素子を密着させる
ことができる。尚この際画素子の仮付け位置が多少ずれ
ていたり、曲がつていても半回溶融によつて画素子は力
が釣合つた位置で平行密着させることができる。C明の
効果〕 以上説明したように、本発明によれば、第1のセラミツ
クシート及び第2のセラミツクシートから成るセラミツ
タ基板に、小さい方の素子例えば発光素子を収容する収
納穴を設け、発光素子をこの収納穴に収容するとともに
、受光素子を前記発光素子を被うように基板上に設置し
、画素子を半田によるフエースダウンボンデイングで接
続するようにしたから、短時間に簡単に組立ては完了し
、経済的効果は大である。
FIG. 2 shows a state in which the connection of the pixel elements 6 and 7 is completed by heating, and 11 and 12 are the completed connection parts. After the solder is melted, the gap 10 shown in FIG. 1 disappears as shown by reference numeral 13, and the pixel elements are brought into close contact. This adhesion effect depends on the amount of solder at the connection part, that is, the sum of the amount of solder on the element and the amount of solder on the bonding pad, the electrode dimension on the element side (usually the diameter of a circle), the dimension on the substrate side, the element weight, etc. side and light receiving element 7
This is done by changing the side. In short, by setting the height change H2 of the light-receiving element when the solder melts larger than the height h1 of the light-emitting element alone when the solder melts (Fig. 1) so as to cancel out the gap 10, the pixel elements can be brought into close contact. can be done. At this time, even if the temporary attachment position of the pixel element is slightly deviated or bent, half-time melting allows the pixel element to be attached in parallel in a position where the forces are balanced. [Effects of Light] As explained above, according to the present invention, a storage hole for accommodating a smaller element, such as a light emitting element, is provided in a ceramic vine substrate made of a first ceramic sheet and a second ceramic sheet, and a light emitting element is formed. The element is accommodated in this storage hole, and the light receiving element is placed on the substrate so as to cover the light emitting element, and the pixel element is connected by face down bonding using solder, so assembly is easy and quick. The project has been completed and the economic effects are significant.

また発光素子と受光素子の接続部の寸法及び半田量に差
をつけ、半田溶融後発光素子と受光素子とが接触して接
続し、隙間が全く生じないように実装すれば、画素子の
光結合の効率は極めて良好となる。
In addition, if the dimensions and amount of solder are different between the connecting parts of the light-emitting element and the light-receiving element, and the light-emitting element and the light-receiving element are connected after the solder melts, and the light-emitting element and the light-receiving element are connected so that there is no gap at all, the light of the pixel element can be The coupling efficiency is extremely good.

なお図示の実施例では、発光素子を小、受光素子を大と
して基板に取付けた例を示したが、その逆でも良いこと
は勿論である。
Although the illustrated embodiment shows an example in which the light emitting element is small and the light receiving element is large and attached to the substrate, it goes without saying that the reverse may be used.

【図面の簡単な説明】[Brief explanation of the drawing]

図面はいずれも本発明に係る光結合半導体装置の一実施
例を示したもので、第1図は組立前の一部の断面図、第
2図は組立完了後の断面図である。
The drawings all show one embodiment of the optically coupled semiconductor device according to the present invention, and FIG. 1 is a sectional view of a portion before assembly, and FIG. 2 is a sectional view after assembly is completed.

Claims (1)

【特許請求の範囲】[Claims] 1 大きさの異なる発光素子及び受光素子を基板に実装
してなる光結合半導体装置であつて、前記基板に小さい
方の素子を収納する大きさを持つ収納穴を形成し、発光
素子又は受光素子のうち小さい方の素子を該収納穴に収
容するとともに、他方の素子を前記収納穴に収容した素
子を被うように基板に設置し、前記両素子をフェースダ
ウンボンディングにより基板に接続するように構成した
ことを特徴とする光結合半導体装置。
1. An optically coupled semiconductor device in which a light-emitting element and a light-receiving element of different sizes are mounted on a substrate, in which a storage hole is formed in the substrate with a size to accommodate the smaller element, and the light-emitting element or the light-receiving element is mounted on a substrate. The smaller of the two elements is housed in the housing hole, and the other element is placed on the board so as to cover the element housed in the housing hole, and both the elements are connected to the board by face-down bonding. 1. An optically coupled semiconductor device comprising:
JP50151815A 1975-12-22 1975-12-22 Hikariketsugohandoutaisouchinojitsusohouhou Expired JPS5924555B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50151815A JPS5924555B2 (en) 1975-12-22 1975-12-22 Hikariketsugohandoutaisouchinojitsusohouhou

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50151815A JPS5924555B2 (en) 1975-12-22 1975-12-22 Hikariketsugohandoutaisouchinojitsusohouhou

Publications (2)

Publication Number Publication Date
JPS5275994A JPS5275994A (en) 1977-06-25
JPS5924555B2 true JPS5924555B2 (en) 1984-06-09

Family

ID=15526905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50151815A Expired JPS5924555B2 (en) 1975-12-22 1975-12-22 Hikariketsugohandoutaisouchinojitsusohouhou

Country Status (1)

Country Link
JP (1) JPS5924555B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6469859A (en) * 1987-09-08 1989-03-15 Mazda Motor Control device for automatic speed change gear

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6469859A (en) * 1987-09-08 1989-03-15 Mazda Motor Control device for automatic speed change gear

Also Published As

Publication number Publication date
JPS5275994A (en) 1977-06-25

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