JPS59232122A - Organic solvent-soluble photosensitive polyimide - Google Patents
Organic solvent-soluble photosensitive polyimideInfo
- Publication number
- JPS59232122A JPS59232122A JP10656183A JP10656183A JPS59232122A JP S59232122 A JPS59232122 A JP S59232122A JP 10656183 A JP10656183 A JP 10656183A JP 10656183 A JP10656183 A JP 10656183A JP S59232122 A JPS59232122 A JP S59232122A
- Authority
- JP
- Japan
- Prior art keywords
- polyimide
- photosensitive
- organic solvent
- photosensitive polyimide
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920001721 polyimide Polymers 0.000 title claims description 70
- 239000004642 Polyimide Substances 0.000 title claims description 66
- -1 aromatic diamine compounds Chemical class 0.000 claims description 19
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 15
- JVERADGGGBYHNP-UHFFFAOYSA-N 5-phenylbenzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C=2C=CC=CC=2)=C1C(O)=O JVERADGGGBYHNP-UHFFFAOYSA-N 0.000 claims description 7
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 34
- 229920005575 poly(amic acid) Polymers 0.000 description 14
- 239000003960 organic solvent Substances 0.000 description 13
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 12
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 206010034972 Photosensitivity reaction Diseases 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000016 photochemical curing Methods 0.000 description 6
- 230000036211 photosensitivity Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 150000004985 diamines Chemical class 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- SIWJWTDBYVBOQL-UHFFFAOYSA-N 2,3-diamino-1,3-diphenylprop-2-en-1-one Chemical compound NC(=C(C1=CC=CC=C1)N)C(=O)C1=CC=CC=C1 SIWJWTDBYVBOQL-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- XTZGKMKTRMDYGP-UHFFFAOYSA-N 1-(3-aminophenyl)-3-(4-aminophenyl)prop-2-en-1-one Chemical compound C1=CC(N)=CC=C1C=CC(=O)C1=CC=CC(N)=C1 XTZGKMKTRMDYGP-UHFFFAOYSA-N 0.000 description 1
- ILBBNQMSDGAAPF-UHFFFAOYSA-N 1-(6-hydroxy-6-methylcyclohexa-2,4-dien-1-yl)propan-1-one Chemical compound CCC(=O)C1C=CC=CC1(C)O ILBBNQMSDGAAPF-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- ILYSAKHOYBPSPC-UHFFFAOYSA-N 2-phenylbenzoic acid Chemical group OC(=O)C1=CC=CC=C1C1=CC=CC=C1 ILYSAKHOYBPSPC-UHFFFAOYSA-N 0.000 description 1
- YTPSFXZMJKMUJE-UHFFFAOYSA-N 2-tert-butylanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=CC(C(C)(C)C)=CC=C3C(=O)C2=C1 YTPSFXZMJKMUJE-UHFFFAOYSA-N 0.000 description 1
- XPXLMPYGNCRVKM-UHFFFAOYSA-N 3-(3-aminophenyl)-1-(4-aminophenyl)prop-2-en-1-one Chemical compound C1=CC(N)=CC=C1C(=O)C=CC1=CC=CC(N)=C1 XPXLMPYGNCRVKM-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 1
- 229940076442 9,10-anthraquinone Drugs 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- MZVQCMJNVPIDEA-UHFFFAOYSA-N [CH2]CN(CC)CC Chemical group [CH2]CN(CC)CC MZVQCMJNVPIDEA-UHFFFAOYSA-N 0.000 description 1
- 230000009435 amidation Effects 0.000 description 1
- 238000007112 amidation reaction Methods 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- SKACCCDFHQZGIA-UHFFFAOYSA-N n-(4-nitronaphthalen-1-yl)acetamide Chemical compound C1=CC=C2C(NC(=O)C)=CC=C([N+]([O-])=O)C2=C1 SKACCCDFHQZGIA-UHFFFAOYSA-N 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 238000007039 two-step reaction Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Landscapes
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、有殿溶媒に対する溶解性が優れた、高分子主
鎖中に感光基を含有する新規なポリイミド、詳しくは、
耐熱性、電気的及び機械的性質に優れ、半導体工業にお
ける固体素子への絶縁膜やパッシベーション膜の形成材
料、及び半導体の集積回路や多層プリント配線板などの
眉間絶縁材料等として好適な、有機溶媒可溶性の感光性
ポリイミドに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel polyimide containing a photosensitive group in the main chain of the polymer, which has excellent solubility in precipitated solvents.
An organic solvent with excellent heat resistance, electrical and mechanical properties, and suitable as a material for forming insulating films and passivation films on solid-state devices in the semiconductor industry, and as an insulating material for semiconductor integrated circuits, multilayer printed wiring boards, etc. This invention relates to soluble photosensitive polyimide.
半導体工業における固体素子への絶縁膜やパッシベーシ
ョン膜の形成材料、及び半導体集積回路や多層プリント
配線板などの眉間絶縁材料は、耐熱性及び絶縁性に富む
ことが要請される。斯る観点から、上記のパッシベーシ
ョン膜等を、絶縁性と共に耐熱性の高いポリイミドで形
成することが種々提案されている(特開昭49−115
541号公報、特開昭54−116216号公報、特開
昭54−116217号公報及び特開昭56−4591
5号公報等参照)。BACKGROUND ART Materials for forming insulating films and passivation films on solid-state devices in the semiconductor industry, and insulating materials for semiconductor integrated circuits, multilayer printed wiring boards, etc., are required to have high heat resistance and insulation properties. From this point of view, various proposals have been made to form the above-mentioned passivation film etc. with polyimide, which has high insulation and heat resistance (Japanese Patent Laid-Open No. 49-115
541, JP 54-116216, JP 54-116217, and JP 56-4591.
(See Publication No. 5, etc.)
しかし、一般にこれらのうちポリイミドを用いたものは
、溶媒不溶性で感光基を有しておらず、上述の提案にお
いては、感光基を含有するポリマーは、何れもポリイミ
ド前駆体であるボリアミンク酸のカルボン酸をアミド化
、エステル化など変性した形であり、ポリアミック酸を
光硬化時にポリイミドとしたり、光硬化後ポストベーク
してポリイミドとする必要がある。However, in general, those using polyimide are solvent-insoluble and do not have photosensitive groups, and in the above proposal, the polymer containing photosensitive groups is a carboxylic acid of polyamic acid, which is a polyimide precursor. It is a modified form of acid such as amidation or esterification, and it is necessary to convert polyamic acid into polyimide during photo-curing or post-baking after photo-curing to form polyimide.
また、有機溶媒可溶性のポリイミド(感光基を有しない
)に、光硬化性基を有する単量体を混合して光硬化させ
るようにした耐熱性フォトレジスト組成物(特開昭54
−109828号公報等参照)もあるが、このような組
成物は、光硬化性が劣り、しかも光硬化後のポリイミド
の耐熱性も充分ではない。また、耐熱性に優れている芳
香族ポリイミドは、一般に溶媒に対する熔解性が劣るの
で、光硬化後未露光部を有機溶媒に溶解させる工程を含
むレリーフパターンの形成には適さない。In addition, a heat-resistant photoresist composition is prepared by mixing a monomer having a photocurable group with an organic solvent-soluble polyimide (which does not have a photosensitive group) and photocuring it (Japanese Patent Laid-Open No. 54
109828, etc.), but such compositions have poor photocurability, and furthermore, the heat resistance of the polyimide after photocuring is not sufficient. Furthermore, aromatic polyimides, which have excellent heat resistance, generally have poor solubility in solvents, and therefore are not suitable for forming relief patterns, which include a step of dissolving unexposed areas in an organic solvent after photocuring.
また、テトラカルボン酸二無水物と光架橋性不飽和二重
結合を含むジアミン化合物、例えばジアミノカルコンと
を反応させて、感光性及び耐熱性う
等に優れたポリイミドを得ることが提案されている(特
開昭57−131227号公報参照)。しかし、このよ
うにして得られるポリイミドは、感光性に優れているが
、有機溶媒に対する溶解性が劣るため、溶解に長時間を
要し、レリーフパターンを形成する上で実用上の問題が
ある。It has also been proposed to react tetracarboxylic dianhydride with a diamine compound containing a photocrosslinkable unsaturated double bond, such as diaminochalcone, to obtain a polyimide with excellent photosensitivity and heat resistance. (Refer to Japanese Unexamined Patent Publication No. 131227/1983). However, although the polyimide obtained in this way has excellent photosensitivity, it has poor solubility in organic solvents, so it takes a long time to dissolve, which poses a practical problem in forming relief patterns.
本発明者等は、上述の現状に鑑み、耐熱性、電気的及び
機械的性質に優れたレリーフパターンを容易に形成し得
る、感光性ポリイミドを提供することを目的として種々
検討した結果、特定の芳香族テトラカルボン酸またはそ
の二無水物と、2つの特定の芳香族ジアミン化合物との
、共重縮合物からなる芳香族ポリイミドが、感光性を有
し且つ有機溶媒可溶性であり、上記目的を達成し得るこ
とを知見した。In view of the above-mentioned current situation, the present inventors conducted various studies with the aim of providing a photosensitive polyimide that can easily form a relief pattern with excellent heat resistance, electrical and mechanical properties, and as a result, a specific An aromatic polyimide consisting of a copolycondensate of an aromatic tetracarboxylic acid or its dianhydride and two specific aromatic diamine compounds is photosensitive and soluble in organic solvents, and achieves the above objectives. I found out that it is possible.
即ち、本発明は、上記知見に基づきなされたもので、ビ
フェニルテトラカルボン酸またはその二無水物と、下記
一般式■及び■で表される2つの芳香族ジアミン化合物
との、共重縮合物からなる、有機溶媒可溶性の感光性ポ
リイミドを提供するものである。That is, the present invention was made based on the above findings, and consists of a copolycondensate of biphenyltetracarboxylic acid or its dianhydride and two aromatic diamine compounds represented by the following general formulas (1) and (2). The present invention provides an organic solvent-soluble photosensitive polyimide.
(但し、上式中、Xは、0、C=Oまたは−o +s
or−XXウーo−を示す。)本発明のポリイミドは、
感光性を有し、耐熱性を有する芳香族ポリイミドを使用
しているので、画像形成後にイミド化工程が不要であり
、従来の非感光性ポリイミドのように画像形成用の別の
フォトレジスト(光硬化性物質)を必要とせず、また酸
成分がビフェニルテトラカルボン酸またはその二無水物
で、ジアミン成分が前記一般式■及び■で表される2つ
の芳香族ジアミン化合物である5−
から、従来の感光基を有するポリイミドに比して有機溶
媒に対する溶解性に優れているためレリーフパターンの
形成に何等の支障も及ぼさない。(However, in the above formula, X is 0, C=O or -o +s
or-XX indicates o-. ) The polyimide of the present invention is
Since it uses an aromatic polyimide that is photosensitive and heat resistant, there is no need for an imidization process after image formation, and unlike conventional non-photosensitive polyimide, a separate photoresist (photoresist) for image formation is used. curable substance) is not required, and the acid component is biphenyltetracarboxylic acid or its dianhydride, and the diamine component is two aromatic diamine compounds represented by the above general formulas (1) and (2). Since it has excellent solubility in organic solvents compared to polyimide having a photosensitive group, it does not pose any problem in forming a relief pattern.
また、本発明のポリイミドは、感光性ポリアミック酸(
ポリイミド前駆体)のように画像形成後イミド化工程を
必要としないために、工程の簡略化のみならず、素子へ
の熱的影響や収縮による歪や応力を与えることがないな
どの多くの優れた効果がある。In addition, the polyimide of the present invention is a photosensitive polyamic acid (
Unlike polyimide precursors, it does not require an imidization process after image formation, so it not only simplifies the process, but also has many advantages such as no distortion or stress due to thermal effects or shrinkage on the device. It has a positive effect.
以下に本発明の感光性ポリイミドについてその製造法と
共に詳述する。The photosensitive polyimide of the present invention will be described in detail below along with its manufacturing method.
前記共重縮合物からなる本発明の感光性ポリイミドの典
型的な構造は、略等モルの酸成分とジアミン成分との共
重縮合物からなり、ジアミン成分中、前記一般式■で表
される芳香族ジアミン化合物と前記一般式〇で表される
芳香族ジアミン化合物との割合はモル比で3:1〜1:
3となっている。A typical structure of the photosensitive polyimide of the present invention comprising the above copolycondensate is a copolycondensate of approximately equimolar amounts of an acid component and a diamine component, in which the diamine component is represented by the general formula (2). The molar ratio of the aromatic diamine compound to the aromatic diamine compound represented by the general formula 〇 is 3:1 to 1:
It is 3.
そして、本発明の感光性ポリイミドは、次の如き方法で
製造される。The photosensitive polyimide of the present invention is produced by the following method.
6−
即ち、本発明の感光性ポリイミドは、特定の芳香族テト
ラカルボン酸類であるビフェニルテトラカルボン酸また
はその二無水物と、前記一般式■及び■で表される2つ
の芳香族ジアミン化合物とを共重合してポリアミック酸
となし、更に該ポリアミック酸を脱水閉環する(イミド
化)ことにより前記共重縮合物を合成して得られる。6- That is, the photosensitive polyimide of the present invention comprises biphenyltetracarboxylic acid or its dianhydride, which is a specific aromatic tetracarboxylic acid, and two aromatic diamine compounds represented by the above general formulas (1) and (2). The copolycondensate is synthesized by copolymerizing to form a polyamic acid, and further dehydrating and ring-closing the polyamic acid (imidization).
本発明の感光性ポリイミドの製造に用いられる上記ビフ
ェニルテトラカルボン酸、またはその二無水物としては
、具体的には3. 3’ 、 4. 4’−ビフエニ
ルテトラカルボン酸、またはその二無水物、2.2″、
3,3° −ビフェニルテトラカルボン酸、またはその
二無水物及び2,3.3’、4” −ビフェニルテトラ
カルボン酸、またはその二無水物があげられ、上記テト
ラカルボン酸のエステル化物、塩などでもよい。Specifically, the biphenyltetracarboxylic acid or dianhydride thereof used in the production of the photosensitive polyimide of the present invention is 3. 3', 4. 4'-biphenyltetracarboxylic acid or its dianhydride, 2.2'',
Examples include 3,3°-biphenyltetracarboxylic acid, or its dianhydride, and 2,3,3',4''-biphenyltetracarboxylic acid, or its dianhydride, and esters, salts, etc. of the above tetracarboxylic acids. But that's fine.
また、前記一般式■で表される芳香族ジアミン化合物と
しては、具体的には次のものをあげることができるが、
それらに限定されない。Further, specific examples of the aromatic diamine compound represented by the general formula (2) include the following:
Not limited to those.
4.4゛−ジアミノカルコン、3,4゛−ジアミノカル
コン、3’、4−ジアミノカルコン、3.3°−ジアミ
ノカルコン、2.3“−ジアミノカルコンなどがあげら
れる。Examples include 4.4'-diaminochalcone, 3,4'-diaminochalcone, 3',4-diaminochalcone, 3.3'-diaminochalcone, and 2.3"-diaminochalcone.
4.4′−ジアミノジベンザルアセトン、3゜4”−ジ
アミノジベンザルアセトン、3.3’−ジアミノジベン
ザルアセトンなどがあげられる。Examples include 4.4'-diaminodibenzalacetone, 3.4''-diaminodibenzalacetone, and 3.3'-diaminodibenzalacetone.
また、前記一般式■で表される芳香族ジアミン化合物と
しては、具体的には次のものをあげることができるが、
それらに限定されない。Further, specific examples of the aromatic diamine compound represented by the general formula (2) include the following:
Not limited to those.
(ll XがOの場合の例
4.4°−ジアミノジフェニルエーテル、3゜4゛−ジ
アミノジフェニルエーテルなどが挙げられる。(ll Example 4 when X is O. Examples include 4°-diaminodiphenyl ether, 3°4′-diaminodiphenyl ether, etc.
(2)XがC=Oの場合の例
4.4“−ジアミノジフェニルケトン、3,4”−ジア
ミノジフェニルケトンなどが挙げられる。(2) Example 4 when X is C═O. Examples include 4"-diaminodiphenyl ketone and 3,4"-diaminodiphenyl ketone.
合の例
ビス(4−アミノフェノキシフェニル)スルホンなどが
挙げられる。Examples of such compounds include bis(4-aminophenoxyphenyl)sulfone.
本発明の感光性ポリイミドは、ポリイミド0゜5g/N
−メチル−2−ピロリドン100nlの濃度の溶液とし
て30℃において測定した対数粘度が0.1〜1.5特
に0.2〜1.0の範囲内にあるものが好ましい。The photosensitive polyimide of the present invention is polyimide 0.5 g/N.
-Methyl-2-pyrrolidone It is preferable that the logarithmic viscosity measured at 30 DEG C. as a solution with a concentration of 100 nl is in the range of 0.1 to 1.5, particularly 0.2 to 1.0.
本発明の感光性ポリイミドの製造について更に詳述する
と、前記共重縮合物を合成する際の前記ビフェニルテト
ラカルボン酸またはその二無水物と前記2つの芳香族ジ
アミン化合物との使用割合は略等モルであり、又、前記
一般式ので表される芳香族ジアミン化合物と前記一般式
〇で表される芳香族ジアミン化合物との好ましい使用割
合は、3:1〜1:3である。そして、それらの合成反
応は、比較的低温下に、先ず重合反応を行わせ、次いで
イミド化反応を行わせる二段階反応による9−
のが好ましい。To explain in more detail the production of the photosensitive polyimide of the present invention, when synthesizing the copolycondensate, the proportions of the biphenyltetracarboxylic acid or its dianhydride and the two aromatic diamine compounds used are approximately equimolar. The preferable ratio of the aromatic diamine compound represented by the above general formula and the aromatic diamine compound represented by the above general formula ○ is 3:1 to 1:3. Preferably, these synthetic reactions are carried out in a two-step reaction in which a polymerization reaction is first carried out and then an imidization reaction is carried out at a relatively low temperature.
即ち、先ず、有機溶媒中で100℃以下、好ましくは8
0℃以下の反応温度で1〜48時間重合反応を行い、次
いで、この重合反応によって得られるポリアミック酸溶
液を有機溶媒で希釈した後、100℃以下、好ましくは
80℃以下の反応温度で無水酢酸、ピリジン、第3級ア
ミンなどのイミド化剤を加えて0.5〜5時間イミド化
反応を行うのが好ましく、その結果前記共重縮合物が合
成され本発明のポリイミドが得られる。That is, first, the temperature is lower than 100°C, preferably 8°C in an organic solvent.
A polymerization reaction is carried out at a reaction temperature of 0°C or lower for 1 to 48 hours, and then, after diluting the polyamic acid solution obtained by this polymerization reaction with an organic solvent, acetic anhydride is carried out at a reaction temperature of 100°C or lower, preferably 80°C or lower. It is preferable to add an imidizing agent such as pyridine, tertiary amine, etc. and carry out the imidization reaction for 0.5 to 5 hours, and as a result, the above-mentioned copolycondensate is synthesized to obtain the polyimide of the present invention.
上記重合反応及び上記イミド化反応における有機溶媒と
しては、例えばN、N−ジメチルスルホキシド、N、
N−ジメチルホルムアミド、N、 N−ジエチルホルム
アミド、N、N−ジメチルアセトアミド、N、N−ジエ
チルアセトアミド、N−メチル−2−ピロリドン、ヘキ
サメチルホスホアミドなどが用いられる。Examples of the organic solvent in the polymerization reaction and the imidization reaction include N,N-dimethyl sulfoxide, N,
N-dimethylformamide, N,N-diethylformamide, N,N-dimethylacetamide, N,N-diethylacetamide, N-methyl-2-pyrrolidone, hexamethylphosphoamide and the like are used.
尚、本発明においては、前記共重縮合物は、前記ビフェ
ニルテトラカルボン酸またはその二無水物と前記芳香族
ジアミン化合物とを有機溶媒中で−1〇二
100℃以上の高温において一段階で重合・イミド化反
応を行うことによっても合成することができるが、前述
の如く、二段階で行うことにより、安定した生成物を得
ることができる。In the present invention, the copolycondensate is produced by polymerizing the biphenyltetracarboxylic acid or its dianhydride and the aromatic diamine compound in an organic solvent at a high temperature of -102100°C or higher in one step. - It can also be synthesized by performing an imidization reaction, but as described above, a stable product can be obtained by carrying out the process in two steps.
而して、本発明の感光性ポリイミドは、レリーフパター
ンの形成材料として使用する場合、有機溶媒に溶解され
た溶液として用いられる。この有機溶媒としては、N、
N−ジメチルホルムアミド、N、N−ジエチルホルムア
ミド、N、N−ジメチルアセトアミド、N、N−ジエチ
ルアセトアミド、N−メチル−2−ピロリドン、ジメチ
ルスルホキシド、ヘキサメチルホスホアミドなどをあげ
ることができ、感光性ポリイミド溶液の好ましい濃度は
5〜30%である。When the photosensitive polyimide of the present invention is used as a material for forming a relief pattern, it is used as a solution dissolved in an organic solvent. This organic solvent includes N,
Examples include N-dimethylformamide, N,N-diethylformamide, N,N-dimethylacetamide, N,N-diethylacetamide, N-methyl-2-pyrrolidone, dimethylsulfoxide, hexamethylphosphoamide, etc., and photosensitive. The preferred concentration of the polyimide solution is 5-30%.
また、上記の感光性ポリイミド溶液に、必要に応じ、増
感剤及び光重合開始剤やエチレン性不飽和基を有する光
により重合可能な化合物を添加させることができる。Furthermore, a sensitizer, a photopolymerization initiator, and a light-polymerizable compound having an ethylenically unsaturated group can be added to the photosensitive polyimide solution, if necessary.
上記増感剤及び光重合開始剤としては、ミヒラ1−
−ズケトン、ベンゾイン、ベンゾインメチル
エーテル、ベンゾインエチルエーテル、ベンゾインイソ
プロピルエーテル、2−t−ブチルアントラキノン、1
.2−ベンゾ−9,10−アントラキノン、4.4”
−ビス(ジエチルアミノ)ベンゾフェノン、アセトフェ
ノン、ベンゾフェノン、チオキサントン、1.5−アセ
ナフテン、N−アセチル−4−ニトロ−1−ナフチルア
ミンなどをあげることができ、またその添加量は感光性
ポリイミド100重量部に対して0.1〜10重量部が
好ましい。As the sensitizer and photoinitiator, Mihira 1-
-zketone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, 2-t-butylanthraquinone, 1
.. 2-benzo-9,10-anthraquinone, 4.4"
Examples include -bis(diethylamino)benzophenone, acetophenone, benzophenone, thioxanthone, 1,5-acenaphthene, N-acetyl-4-nitro-1-naphthylamine, and the amount added is based on 100 parts by weight of photosensitive polyimide. It is preferably 0.1 to 10 parts by weight.
また、上記エチレン性不飽和基を有する光により重合可
能な化合物としては、エチレングリコールジ(メタ)ア
クリレート、プロピレングリコールジ(メタ)アクリレ
ート、ボリプロビレングリコールジ(メタ)アクリレー
ト、トルメチロールプロパントリ (メタ)アクリレー
ト、テトラメチロールメタンテトラ(メタ)アクリレー
ト、N。Further, as the photopolymerizable compounds having ethylenically unsaturated groups, ethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, tolmethylolpropane tri( meth)acrylate, tetramethylolmethanetetra(meth)acrylate, N.
N゛ −メチレンビス(メタ)アクリレート、ジエチル
アミノエチル(メタ)アクリレートなどをあげることが
できる。Examples include N'-methylenebis(meth)acrylate and diethylaminoethyl(meth)acrylate.
本発明の感光性ポリイミドによれば、上記の如く感光性
ポリイミド溶液を調整することにより次のようにしてレ
リーフパターンを形成することができる。According to the photosensitive polyimide of the present invention, a relief pattern can be formed in the following manner by adjusting the photosensitive polyimide solution as described above.
即ち、まず、上記の感光性ポリイミド溶液を基板に塗布
し、これを乾燥して有機溶媒を除去する。That is, first, the above-mentioned photosensitive polyimide solution is applied to a substrate and dried to remove the organic solvent.
基板への塗布は、例えば回転塗布機で行うことができる
。塗布膜の乾燥は150℃以下、好ましくは100℃以
下で行う。この際減圧はしてもしなくてもよい。乾燥後
、塗布膜にネガ型のフォトマスクチャートを置き、紫外
線、可視光線、電子線、X線などの活性光線を照射する
。次いで未露光の部分を現像液で洗い流すことによりポ
リイミドのレリーフパターンを得る。上記の現像液とし
ては、N、N−ジメチルホルムアミド、N、N−ジメチ
ルアセトアミド、ジメチルスルホキシド、N−メチル−
2−ピロリドン、ヘキサメチルホスホアミドなどの溶剤
又は該溶剤とメタノール、エタノールとの混合系を用い
ることができる。Coating onto the substrate can be performed using, for example, a rotary coater. The coating film is dried at a temperature of 150°C or lower, preferably 100°C or lower. At this time, the pressure may or may not be reduced. After drying, a negative photomask chart is placed on the coated film, and active light such as ultraviolet rays, visible light, electron beams, and X-rays is irradiated. The unexposed areas are then washed away with a developer to obtain a polyimide relief pattern. Examples of the above developer include N,N-dimethylformamide, N,N-dimethylacetamide, dimethylsulfoxide, N-methyl-
A solvent such as 2-pyrrolidone or hexamethylphosphoamide or a mixed system of the solvent and methanol or ethanol can be used.
上述の如く、本発明の感光性ポリイミドは、ポ13−
リマーの中に感光基(光重合可能な基)を有し、且つ酸
成分がビフェニルテ斗うカルボン酸またはその二無水物
で、ジアミン成分が前記一般式■で表される芳香族ジア
ミン化合物と前記一般式■で表される芳香族ジアミン化
合物である共重縮合物であるから、有機溶媒に対する熔
解性が優れており、そのため、光化学的手段によってレ
リーフパターンを容易に形成することができ、且つレリ
ーフパターンを形成する場合、本発明のポリイミドは、
感光性を有し、ポリイミドの耐熱性を保持するために、
従来の非感光性ポリイミドのように、画像形成用の別の
光硬化性物質を特に必要とせず、また、感光性ポリアミ
ック酸(ポリイミド前駆体)のように画像形成後イミド
化工程を必要としないため、工程の簡略化のみならず、
素子への熱的影響や収縮による歪や応力を与えることが
ないなどの多くの優れた効果がある。しかも、本発明の
感光性ポリイミドにより形成したレリーフパターンは、
耐熱性、電気的及び機械的に優れたものであり、半導体
工業における固体素子の絶縁体膜14−
やパッシベーション膜として有効であるばかりでなく、
ハイブリッド回路やプリント回路の多層配線構造の絶縁
膜やソルダーレジストとして用いることができる。As mentioned above, the photosensitive polyimide of the present invention has a photosensitive group (photopolymerizable group) in the poly-13-rimer, and the acid component is biphenyl carboxylic acid or its dianhydride, and the diamine Since it is a copolycondensate whose components are an aromatic diamine compound represented by the above general formula (1) and an aromatic diamine compound represented by the above general formula (2), it has excellent solubility in organic solvents, and therefore is suitable for photochemistry. A relief pattern can be easily formed by manual means, and when forming a relief pattern, the polyimide of the present invention can be
In order to have photosensitivity and maintain the heat resistance of polyimide,
Unlike conventional non-photosensitive polyimide, it does not require a separate photocurable material for image formation, and unlike photosensitive polyamic acid (polyimide precursor), it does not require an imidization process after image formation. Therefore, it not only simplifies the process, but also
It has many excellent effects such as no thermal influence on the element, no strain or stress due to shrinkage, etc. Moreover, the relief pattern formed from the photosensitive polyimide of the present invention is
It has excellent heat resistance, electrical and mechanical properties, and is not only effective as an insulating film 14- or a passivation film for solid-state devices in the semiconductor industry.
It can be used as an insulating film or solder resist for multilayer wiring structures of hybrid circuits and printed circuits.
以下に、本発明の感光性ポリイミドの製造を示す実施例
及び本発明の感光性ポリイミドの効果を示す種々の物性
試験及びその結果を、比較例と共に挙げる。Examples showing the production of the photosensitive polyimide of the present invention and various physical property tests showing the effects of the photosensitive polyimide of the present invention and their results are listed below, along with comparative examples.
実施例I
N−メチル−2−ピロリドン(NMP) 11.02
m1に2.3.3°、4゛−ビフェニルテトラカルボン
酸二無水物1580mgと3.3′−ジアミノジベンザ
ルアセトン710mgと4.4゛−ジアミノジフェニル
エーテル538mgを加え、30℃で5時間攪拌して反
応させポリアミック酸を得た。Example I N-methyl-2-pyrrolidone (NMP) 11.02
Add 1580 mg of 2.3.3°, 4′-biphenyltetracarboxylic dianhydride, 710 mg of 3.3′-diaminodibenzalacetone, and 538 mg of 4.4′-diaminodiphenyl ether to m1, and stir at 30°C for 5 hours. The mixture was reacted to obtain polyamic acid.
次に、このポリアミック酸にNMP4.1.3mlを加
え希釈したのち、無水酢酸10.96g、ピリジン4.
24g、ベンゼン8.0ml及びNM P 6.89m
lを加え、50°Cで2時間反応させイミド化物を得1
た。Next, 4.1.3 ml of NMP was added to this polyamic acid to dilute it, followed by 10.96 g of acetic anhydride and 4.1 ml of pyridine.
24g, benzene 8.0ml and NMP 6.89m
1 and reacted at 50°C for 2 hours to obtain imidized product 1.
Ta.
イミド化物溶液中にメタノールを滴下して加え、ポリイ
ミドを析出させ濾別して、黄色のポリイミド粉末(本発
明のポリイミド)を得た。Methanol was added dropwise to the imidide solution to precipitate polyimide, which was filtered off to obtain yellow polyimide powder (polyimide of the present invention).
実施例2
NMPll、8而lに2.3.3’ 、4”−ビフェニ
ルテトラカルボン酸二無水物1737mgと3゛、4−
ジアミノカルコン702mgと4.4′−ジアミノジフ
ェニルエーテル591+ngを加え、30℃で5時間攪
拌して反応させポリアミック酸を得た。Example 2 1737 mg of 2.3.3',4''-biphenyltetracarboxylic dianhydride and 3',4-
702 mg of diaminochalcone and 591+ ng of 4,4'-diaminodiphenyl ether were added, and the mixture was stirred and reacted at 30° C. for 5 hours to obtain polyamic acid.
次に、このポリアミック酸にNMP44.3mlを加え
希釈したのち、無水酢酸12.06g、ピリジン4.6
7g、ベンゼン8.6ml及びNMP7.38m1を加
え、50℃で2時間反応させイミド化物を得た。Next, 44.3 ml of NMP was added to this polyamic acid to dilute it, and then 12.06 g of acetic anhydride and 4.6 g of pyridine were added.
7 g of benzene, 8.6 ml of benzene, and 7.38 ml of NMP were added, and the mixture was reacted at 50° C. for 2 hours to obtain an imidized product.
イミド化物溶液中にメタノールを滴下して加え、ポリイ
ミドを析出させ濾別して、黄色のポリイミド粉末(本発
明のポリイミド)を得た。Methanol was added dropwise to the imidide solution to precipitate polyimide, which was filtered off to obtain yellow polyimide powder (polyimide of the present invention).
実施例3
実施例1で用いた4、4”−ジアミノジフェニルエーテ
ルの代わりに、ビス(4−アミノフェノキシフェニル)
スルホンを用いて実施例1と同様にして本発明のポリイ
ミドを得た。Example 3 Instead of the 4,4”-diaminodiphenyl ether used in Example 1, bis(4-aminophenoxyphenyl)
A polyimide of the present invention was obtained in the same manner as in Example 1 using sulfone.
物性試験
上記実施例1〜3で得たポリイミドについて下記(11
〜(6)の物性試験を行い下表に示す結果を得た。Physical property test The following (11
The physical property tests (6) to (6) were conducted and the results shown in the table below were obtained.
+11ポリイミドの粘度
ポリイミド0.5g NMP 100mlの濃度のポリ
イミド溶液を30℃で対数粘度を測定した。+11 Viscosity of Polyimide The logarithmic viscosity of a polyimide solution having a concentration of 0.5 g of polyimide and 100 ml of NMP was measured at 30°C.
(2)ポリイミドの成膜性
厚さ約10μのポリイミドフィルムをガラス板上に作成
し、これを水に浸して剥離し、180゜に折り曲げ、ク
ランクのない場合を○、クラックありを△、製膜時にク
ランクの生じるものを×とした。(2) Polyimide film forming property A polyimide film with a thickness of about 10 μm was created on a glass plate, soaked in water, peeled off, and bent at 180 degrees. Those in which cranking occurred during film formation were marked as ×.
(3)ポリイミドのNMPに対する溶解性常温において
NMPに対するポリイミドの溶解度(wt%)を測定し
た。(3) Solubility of polyimide in NMP The solubility (wt%) of polyimide in NMP was measured at room temperature.
(4)ポリイミドフィルムの熔解性
ポリイミドのNMP 10%溶液から作成した厚17−
さ約10μのポリイミドフィルムを室温でNMP中に浸
漬し攪拌し、該フィルムが溶解するまでの時間で溶解性
を測定した。(4) Solubility of polyimide film A polyimide film with a thickness of about 17-10 μm prepared from a 10% NMP solution of polyimide is immersed in NMP at room temperature and stirred, and the solubility is measured by the time it takes for the film to dissolve. did.
(5)熱分解開始温度
理学電気■製差動熱天秤TG−DSCにより、重量減の
開始温度を測定した。(5) Starting temperature of thermal decomposition The starting temperature of weight loss was measured using a differential thermobalance TG-DSC manufactured by Rigaku Denki ■.
(6)光硬化特性
ポリイミドのNMP 10%溶液をガラス板上に回転塗
布機(2000〜5000rpm )を用いて塗布し、
圧力1〜2 n++nt1gの減圧下、50℃で5時間
乾燥して数μの厚さく下表参照)の薄膜を作成し、この
薄膜について下記の光感度及び解像力の試験に供した。(6) Coating a 10% NMP solution of photocurable polyimide onto a glass plate using a spin coating machine (2000-5000 rpm),
The thin film was dried at 50° C. for 5 hours under a reduced pressure of 1 to 2 n++ nt1 g to form a thin film several microns thick (see the table below), and this thin film was subjected to the following photosensitivity and resolution tests.
■光感度
上記薄膜を、超高圧水銀灯(ジェットライト2kW)を
用いて、照度7.2mW /c+ll (350mJJ
)で照射して光硬化させ、光硬化する迄の光照射量(J
/ c艷)を測定した。■Photosensitivity The above thin film was coated with an ultra-high pressure mercury lamp (jet light 2kW) at an illuminance of 7.2mW/c+ll (350mJJ).
) to photocure, and the amount of light irradiation (J) until photocuring.
/c) was measured.
■解像力
上記薄膜についてテストチャートとして凸版印刷18−
■製ネガ型テストチャート(トソバンテストチャートN
1最小線中0.98±0.25μ)を用いてレリーフパ
ターンを形成し、パターンの良否を判定した。■Resolving power As a test chart for the above thin film, a negative type test chart manufactured by Toppan Printing 18- ■ (Tosoban Test Chart N)
A relief pattern was formed using a minimum line of 0.98±0.25μ), and the quality of the pattern was determined.
比較例I
NMP6.2mlにピロメリット酸二無水物722mg
と3゛、4−ジアミノカルコン788mgを加え、30
℃で5時間攪拌して反応させポリアミック酸を得た。こ
のポリアミック酸の対数粘度は0.52であった。Comparative Example I 722 mg of pyromellitic dianhydride in 6.2 ml of NMP
and 788 mg of 3゛,4-diaminochalcone were added, and 30
The reaction mixture was stirred at ℃ for 5 hours to obtain polyamic acid. The logarithmic viscosity of this polyamic acid was 0.52.
次に、このポリアミック酸にNMP22mlを加え希釈
したのち、無水酢酸6.7g、ピリジン2.6g1ベン
ゼン4.3ml及びNMP3.7mlを加え、50℃で
反応させたところ、1分後に黄色のポリイミド粉末が析
出した。そのままさらに120分間反応させた。Next, 22 ml of NMP was added to this polyamic acid to dilute it, and then 6.7 g of acetic anhydride, 2.6 g of pyridine, 4.3 ml of benzene, and 3.7 ml of NMP were added and reacted at 50°C. After 1 minute, a yellow polyimide powder was formed. was precipitated. The reaction was continued for an additional 120 minutes.
析出した黄色のポリイミド粉末を濾別後、このポリイミ
ド粉末10+ngをNMPlomlに溶解しようとした
ところ溶解しなかった。After filtering off the precipitated yellow polyimide powder, an attempt was made to dissolve 10+ng of this polyimide powder in NMploml, but it did not dissolve.
従って、このポリイミドでの光感度、解像力は測定不能
であった。Therefore, it was impossible to measure the photosensitivity and resolution of this polyimide.
特許出願人 宇部興産株式会社 日本電信電話公社patent applicant Ube Industries Co., Ltd. Nippon Telegraph and Telephone Corporation
Claims (1)
記一般式■及び■で表される2つの芳香族ジアミン化合
物との、共重縮合物からなる、有機溶媒可溶性の感光性
ポリイミド。 (但し、上式中、Xは、O,C=Oまたは[Claims] An organic solvent-soluble photosensitive polyimide consisting of a copolycondensate of biphenyltetracarboxylic acid or its dianhydride and two aromatic diamine compounds represented by the following general formulas (1) and (2). . (However, in the above formula, X is O, C=O or
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10656183A JPS59232122A (en) | 1983-06-14 | 1983-06-14 | Organic solvent-soluble photosensitive polyimide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10656183A JPS59232122A (en) | 1983-06-14 | 1983-06-14 | Organic solvent-soluble photosensitive polyimide |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59232122A true JPS59232122A (en) | 1984-12-26 |
Family
ID=14436716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10656183A Pending JPS59232122A (en) | 1983-06-14 | 1983-06-14 | Organic solvent-soluble photosensitive polyimide |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59232122A (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0359034A (en) * | 1989-07-27 | 1991-03-14 | Hitachi Chem Co Ltd | Production of polyimide resin |
US5177181A (en) * | 1991-06-06 | 1993-01-05 | Occidental Chemical Corporation | Diamines and photosensitive polyimides made therefrom |
US5665523A (en) * | 1994-03-29 | 1997-09-09 | Nitto Denko Corporation | Heat-resistant negative photoresist composition, photosensitive substrate, and process for forming negative pattern |
US5851736A (en) * | 1991-03-05 | 1998-12-22 | Nitto Denko Corporation | Heat-resistant photoresist composition, photosensitive substrate, and process for forming heat-resistant positive or negative pattern |
US6436593B1 (en) | 1999-09-28 | 2002-08-20 | Hitachi Chemical Dupont Microsystems Ltd. | Positive photosensitive resin composition, process for producing pattern and electronic parts |
JP2008531782A (en) * | 2005-12-01 | 2008-08-14 | エルジー・ケム・リミテッド | Novel polyimide and method for producing the same |
US7435525B2 (en) | 2004-05-07 | 2008-10-14 | Hitachi Chemical Dupont Microsystems Ltd. | Positive photosensitive resin composition, method for forming pattern, and electronic part |
US7638254B2 (en) | 2004-05-07 | 2009-12-29 | Hitachi Chemical Dupont Microsystems Ltd | Positive photosensitive resin composition, method for forming pattern, and electronic part |
US8298747B2 (en) | 2007-03-12 | 2012-10-30 | Hitachi Chemical Dupont Microsystems, Ltd. | Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part |
US8420291B2 (en) | 2007-10-29 | 2013-04-16 | Hitachi Chemical Dupont Microsystems, Ltd. | Positive photosensitive resin composition, method for forming pattern, electronic component |
US8758977B2 (en) | 2005-09-22 | 2014-06-24 | Hitachi Chemical Dupont Microsystems, Ltd. | Negative-type photosensitive resin composition, pattern forming method and electronic parts |
CN111675807A (en) * | 2020-06-17 | 2020-09-18 | 东华大学 | A UV-excitable self-crosslinking water-soluble 3D printing ink |
-
1983
- 1983-06-14 JP JP10656183A patent/JPS59232122A/en active Pending
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0359034A (en) * | 1989-07-27 | 1991-03-14 | Hitachi Chem Co Ltd | Production of polyimide resin |
US5851736A (en) * | 1991-03-05 | 1998-12-22 | Nitto Denko Corporation | Heat-resistant photoresist composition, photosensitive substrate, and process for forming heat-resistant positive or negative pattern |
US5177181A (en) * | 1991-06-06 | 1993-01-05 | Occidental Chemical Corporation | Diamines and photosensitive polyimides made therefrom |
US5665523A (en) * | 1994-03-29 | 1997-09-09 | Nitto Denko Corporation | Heat-resistant negative photoresist composition, photosensitive substrate, and process for forming negative pattern |
US6436593B1 (en) | 1999-09-28 | 2002-08-20 | Hitachi Chemical Dupont Microsystems Ltd. | Positive photosensitive resin composition, process for producing pattern and electronic parts |
US7435525B2 (en) | 2004-05-07 | 2008-10-14 | Hitachi Chemical Dupont Microsystems Ltd. | Positive photosensitive resin composition, method for forming pattern, and electronic part |
US7638254B2 (en) | 2004-05-07 | 2009-12-29 | Hitachi Chemical Dupont Microsystems Ltd | Positive photosensitive resin composition, method for forming pattern, and electronic part |
EP2469337A1 (en) | 2004-05-07 | 2012-06-27 | Hitachi Chemical DuPont MicroSystems Ltd. | Positive photosensitive resin composition, method for forming pattern, and electronic component |
US8758977B2 (en) | 2005-09-22 | 2014-06-24 | Hitachi Chemical Dupont Microsystems, Ltd. | Negative-type photosensitive resin composition, pattern forming method and electronic parts |
US8871422B2 (en) | 2005-09-22 | 2014-10-28 | Hitachi Chemical Dupont Microsystems Ltd. | Negative-type photosensitive resin composition, pattern forming method and electronic parts |
JP2008531782A (en) * | 2005-12-01 | 2008-08-14 | エルジー・ケム・リミテッド | Novel polyimide and method for producing the same |
US8298747B2 (en) | 2007-03-12 | 2012-10-30 | Hitachi Chemical Dupont Microsystems, Ltd. | Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part |
US8420291B2 (en) | 2007-10-29 | 2013-04-16 | Hitachi Chemical Dupont Microsystems, Ltd. | Positive photosensitive resin composition, method for forming pattern, electronic component |
CN111675807A (en) * | 2020-06-17 | 2020-09-18 | 东华大学 | A UV-excitable self-crosslinking water-soluble 3D printing ink |
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